RB521LP-30 [GOOD-ARK]
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode;型号: | RB521LP-30 |
厂家: | GOOD-ARK ELECTRONICS |
描述: | DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode |
文件: | 总3页 (文件大小:572K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
RB521LP-30
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
MARKETS
FEATURES
Ultra Small power mold type. (DFN1006)
Mobile Handsets
Low IR
MP3 Players
High reliability
Low current rectification
Digital Camera and Camcorders
Notebook PCs & PDAs
GPS
MECHANICAL DATA
Case: DFN1006-2
Case Material: Molded Plastic, "Green" Molding
Compound. UL Flammability Classification Rating
94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: Cathode Dot
Terminals: Finish - NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method
208
Weight: 0.001 grams (approximate)
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.goodark.com for more information about Good-Ark’s definitions of Halogen and Antimony-free, "Green" and
Lead-free.
3. For packaging details, go to our website at http://www.goodark.com.
Absolute Maximum Ratings (Ta=25℃ unless otherwise specified)
Symbol
VR
Parameter
Value
30
Unit
V
Reverse Voltage (DC)
IO
Average Rectified Forward Current
Forward Current Surge Peak (60Hz/1cyc)
Junction Temperature
100
mA
mA
℃
IFSM
TJ
500
150
TSTG
Storage Temperature
-40 to +150
℃
Electrical Characteristics (Ta=25℃ unless otherwise specified)
Parameter
Forward Voltage
Reverse Leakage Current
Symbol
Test conditions
IF = 10mA
VR = 10V
Min
Typ
Max
Unit
V
VF
IR
-
-
0.35
10
uA
1 / 3
RB521LP-30
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
Electrical characteristic curves (Ta=25℃ unless otherwise specified)
2 / 3
RB521LP-30
DFN 1.0X0.6-2L Plastic-Encapsulate Schottky Barrier Diode
DFN 1.0X0.6-2L Package Outline Dimensions
Lead finish: NiPdAu
DFN 1.0X0.6-2L Suggested Pad Layout
3 / 3
相关型号:
©2020 ICPDF网 联系我们和版权申明