RB521S-40 [SEMTECH]
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE; 硅外延平面肖特基势垒二极管
| 型号： | RB521S-40 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE |
| 文件： | 总3页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
RB521S-40
SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
for rectifying small power applications
Features
PINNING
• Ultra small mold type
• Low forward voltage
• High reliability
DESCRIPTION
Cathode
PIN
1
Anode
2
2
1
Z
Top View
Marking Code: "Z"
Simplified outline SOD-523 and symbol
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Repetitive Peak Reverse Voltage
Reverse Voltage
VRM
VR
IO
45
V
V
40
Mean Rectifying Current
200
mA
A
Peak Forward Surge Current (60Hz for Cyc.)
Junction Temperature
IFSM
Tj
1
O
C
150
O
C
Storage Temperature Range
Ts
- 55 to + 150
O
Characteristics at Ta = 25 C
Parameter
Symbol
Min.
Max.
Unit
Forward Voltage
at IF = 10 mA
at IF = 100 mA
at IF = 200 mA
0.16
0.31
0.41
0.3
0.45
0.54
VF
V
Reverse Current
at VR = 10 V
at VR = 40 V
IR
μA
-
-
20
90
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
RB521S-40
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
RB521S-40
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-523
∠
ALL ROUND
HE
D
A
V
bp
C
D
E
HE
UNIT
mm
A
∠
O
0.4
0.3
0.135
0.127
1.25
1.15
0.85
0.75
0.70
0.60
1.7
1.5
0.1
5
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 30/01/2007
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