ST2N5551 [SEMTECH]
NPN Silicon Epitaxial Planar Transistors; NPN硅外延平面晶体管
| 型号： | ST2N5551 |
| 厂家： | 
SEMTECH CORPORATION |
| 描述： | NPN Silicon Epitaxial Planar Transistors |
| 文件： | 总3页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST 2N5550 / 2N5551
NPN Silicon Epitaxial Planar Transistors
for general purpose, high voltage amplifier
applications.
As complementary types the PNP transistors
ST 2N5400 and ST 2N5401 are recommended.
On special request, these transistors can be
manufactured in different pin configurations.
TO-92 Plastic Package
Weight approx. 0.19g
O
Absolute Maximum Ratings (Ta = 25 C)
Parameter
Symbol
Value
Unit
Collector Emitter Voltage
ST 2N5550
ST 2N5551
VCEO
VCEO
140
160
V
V
Collector Base Voltage
ST 2N5550
ST 2N5551
VCBO
VCBO
160
180
V
V
Emitter Base Voltage
Collector Current
VEBO
IC
6
V
mA
mW
oC
600
Power Dissipation
Ptot
Tj
625 1)
Junction Temperature
Storage Temperature Range
150
TS
- 55 to + 150
oC
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/05/2006
ST 2N5550 / 2N5551
O
Characteristics at Tamb = 25 C
Parameter
Symbol
Min.
Max.
Unit
DC Current Gain
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
ST 2N5550
ST 2N5551
hFE
hFE
hFE
hFE
hFE
hFE
60
80
60
80
20
30
-
-
-
-
-
-
-
at VCE = 5 V, IC = 1 mA
-
250
250
-
at VCE = 5 V, IC = 10 mA
at VCE = 5 V, IC = 50 mA
-
Collector Emitter Breakdown Voltage
at IC = 1 mA
V(BR)CEO
140
160
-
-
V
V
ST 2N5550
ST 2N5551
V(BR)CEO
Collector Base Breakdown Voltage
at IC = 100 µA
V(BR)CBO
160
180
-
-
V
V
ST 2N5550
ST 2N5551
V(BR)CBO
Emitter Base Breakdown Voltage
at IE = 10 µA
V(BR)EBO
6
-
V
Collector Cutoff Current
at VCB = 100 V
ST 2N5550
ST 2N5551
ICBO
ICBO
-
-
100
50
nA
nA
at VCB = 120 V
Emitter Cutoff Current
at VEB = 4 V
IEBO
-
50
nA
Collector Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VCE sat
VCE sat
VCE sat
-
-
-
0.15
0.25
0.2
V
V
V
ST 2N5550
ST 2N5551
Base Saturation Voltage
at IC = 10 mA, IB = 1 mA
at IC = 50 mA, IB = 5 mA
VBE sat
VBE sat
VBE sat
-
-
-
1
1.2
1
V
V
V
ST 2N5550
ST 2N5551
Gain Bandwidth Product
fT
100
-
300
6
MHz
pF
at VCE = 10 V, IC = 10 mA, f = 100 MHz
Collector Base Capacitance
at VCB = 10 V, f = 1 MHz
CCBO
Noise Figure
NF
NF
-
-
-
10
8
200 1)
dB
dB
at VCE = 5 V, IC = 200 µA, RG = 2 KΩ, f = 30 Hz…15 KHz ST 2N5550
ST 2N5551
Thermal Resistance Junction to Ambient
RthA
K/W
1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/05/2006
ST 2N5550 / 2N5551
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 10/05/2006
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