SPM6G150-060D [SENSITRON]
Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation; 三相IGBT桥门极驱动器和光隔离型号: | SPM6G150-060D |
厂家: | SENSITRON |
描述: | Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation |
文件: | 总4页 (文件大小:66K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SENSITRON
SEMICONDUCTOR
SPM6G150-060D
TECHNICAL DATA
DATASHEET 4113, REV A
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 600 VOLT, 150 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
IGBT SPECIFICATIONS
BVCES
MIN
TYP
MAX
UNIT
Collector to Emitter Breakdown Voltage
600
-
-
-
V
A
IC = 250 mA, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
-
150
O
TC = 90 C
130
250
Pulsed Collector Current, 1mS
Gate to Emitter Voltage
ICM
-
-
-
-
-
A
V
VGE
IGES
ICES
-
-
-
+/-20
Gate-Emitter Leakage Current , VGE = +/-20V
Zero Gate Voltage Collector Current
+/- 100
nA
VCE = 600 V, VGE=0V T=25oC
i
3
mA
mA
V
VCE = 480 V, VGE=0V T=125oC
i
20
2.0
O
Collector to Emitter Saturation Voltage,
IC = 100A, VGE = 15V,
TC = 25 C
VCE(SAT)
-
-
1.7
-
Maximum Thermal Resistance
RqJC
0.25
oC/W
Brake IGBT SPECIFICATIONS
O
Continuous Collector Current
TC = 25 C
IC
-
-
80
60
A
O
TC = 90 C
Pulsed Collector Current, 0.5mS
Maximum Thermal Resistance
ICM
-
-
-
-
120
A
RqJC
0.45
120
oC/W
Over-Temperature Shutdown
Over-Temperature Shutdown
Over-Temperature Shutdown Hysteresis
Over-Temperature Output
Tsd
100
110
20
oC
oC
Tco
10
10mV/oC
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SPM6G150-060D
SENSITRON
TECHNICAL DATA
DATASHEET 4113, REV A
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
PIV
IF
600
-
-
-
V
A
A
V
O
Continuous Forward Current, TC = 90 C
-
-
-
-
130
Forward Surge Current, tp = 10 msec
IFSM
VF
trr
-
500
1.7
160
Diode Forward Voltage,
IF = 100A
1.4
90
Diode Reverse Recovery Time
(IF=100A, VRR=300V , di/dt=200 A/ms)
nsec
oC/W
Maximum Thermal Resistance
RqJC
-
-
0.4
Gate Driver
Supply Voltage
Input On Current
VCC
HIN, LIN
Ith
10
2
15
20
5.0
-
V
mA
mA
V
Opto-Isolator Logic High Input Threshold
Input Reverse Breakdown Voltage
-
1.6
-
BVin
VF
5.0
-
-
Input Forward Voltage @ I = 5mA
in
1.5
-
1.7
9.7
1.55
TBD
V
Under Voltage Lockout
VCCUV
Itrip-ref
tbl
7.0
1.45
3
V
(1)
ITRIP Refernce Voltage
1.5
5
V
(2)
Desaturation Over-Current Protection Blanking time
msec
nsec
Input-to-Output Turn On Delay
Output Turn On Rise Time
Input-to-Output Turn Off Delay
tond
-
-
-
-
800
180
tr
toffd
1000
160
tf
Output Turn Off Fall Time
At VCC=300V, IC=50A, TC = 25
Input-Output Isolation Voltage
-
1000
-
-
V
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
T
-40
-55
-
-
150
150
oC
oC
jmax
T
jmax
(1) ITRIP Cycle-by cycle current limit is internally set to 70A peak. The set point can be lowered by connecting a resistor
between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref
(2) Desaturation blanking maximum time is TBD and is only provided at the low-side IGBTs.
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SPM6G150-060D
SENSITRON
TECHNICAL DATA
DATASHEET 4113, REV A
Package Drawing:
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
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• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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