SPM6G250-120D [SENSITRON]
Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation; 三相IGBT桥门极驱动器和光隔离
| 型号： | SPM6G250-120D |
| 厂家： | 
SENSITRON |
| 描述： | Three-Phase IGBT BRIDGE With Gate Driver and Optical Isolation |
| 文件： | 总5页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SENSITRON
SEMICONDUCTOR
SPM6G250-120D
TECHNICAL DATA
DATASHEET 4109, REV ENG-
Three-Phase IGBT BRIDGE, With Gate Driver and Optical Isolation
DESCRIPTION: A 1200 VOLT, 250 AMP, THREE PHASE IGBT BRIDGE
ELECTRICAL CHARACTERISTICS PER IGBT DEVICE
PARAMETER
(Tj=250C UNLESS OTHERWISE SPECIFIED)
SYMBOL
MIN
TYP
MAX
UNIT
IGBT SPECIFICATIONS
Collector to Emitter Breakdown Voltage
BVCES
1200
-
-
-
-
V
A
IC = 250 mA, VGE = 0V
O
Continuous Collector Current
TC = 25 C
IC
250
O
TC = 90 C
240
600
Pulsed Collector Current, 1mS
Gate to Emitter Voltage
ICM
-
-
-
-
-
-
A
V
VGE
IGES
-
-
+/-20
+/- 300
6.0
Gate-Emitter Leakage Current , VGE = +/-20V
nA
V
Gate Threshold Voltage, IC=2mA
Zero Gate Voltage Collector Current
V
3.0
-
GE(TH)
ICES
VCE = 1200 V, VGE=0V T=25oC
i
5
mA
mA
V
VCE = 900 V, VGE=0V T=125oC
i
40
2.8
O
Collector to Emitter Saturation Voltage,
IC = 200A, VGE = 15V,
TC = 25 C
VCE(SAT)
-
-
2.5
-
Maximum Thermal Resistance
RqJC
0.10
0.20
oC/W
oC/W
Brake IGBT
60A Maximum Current
Brake IGBT SPECIFICATIONS
O
Continuous Collector Current
TC = 25 C
IC
-
-
-
-
150
120
300
A
A
O
TC = 90 C
Pulsed Collector Current, 0.5mS
ICM
Over-Temperature Shutdown
Over-Temperature Shutdown
Tsd
Tso
100
110
20
120
oC
oC
Over-Temperature Shutdown Hysteresis
Over-Temperature Output
10
10mV/oC
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SPM6G250-120D
SENSITRON
TECHNICAL DATA
DATASHEET 4109, REV ENG-
ULTRAFAST DIODES RATING AND CHARACTERISTICS
Diode Peak Inverse Voltage
PIV
IF
1200
-
-
-
V
A
O
Continuous Forward Current, TC = 90 C
-
-
-
-
240
700
2.3
250
Forward Surge Current, tp = 10 msec
IFSM
VF
trr
-
A
Diode Forward Voltage,
IF = 200A
2.0
180
V
Diode Reverse Recovery Time
nsec
(IF=200A, VRR=600V , di/dt=200 A/ms)
Maximum Thermal Resistance
RqJC
-
-
0.15
oC/W
Gate Driver
Supply Voltage
Input On Current
VCC
HIN, LIN
Ith
10
2
15
20
5.0
-
V
mA
mA
V
Opto-Isolator Logic High Input Threshold
Input Reverse Breakdown Voltage
-
1.6
-
BVin
5.0
-
-
Input Forward Voltage @ I = 5mA
in
VF
1.5
-
1.7
9.7
1.55
TBD
V
Under Voltage Lockout
VCCUV
Itrip-ref
7.0
1.45
3
V
(1)
ITRIP Refernce Voltage
1.5
5
V
(2)
Desaturation Over-Current Protection Blanking time
msec
nsec
Input-to-Output Turn On Delay
Output Turn On Rise Time
Input-to-Output Turn Off Delay
tond
tr
toffd
tf
-
-
-
-
800
180
1000
160
Output Turn Off Fall Time
At VCC=300V, IC=50A, TC = 25
Input-Output Isolation Voltage
-
1000
TBD
-
-
V
Hall Current Sensors Gain, at DC bus, Phase A, and Phase
TBD
TBD
V/A
Maximum operating Junction Temperature
Maximum Storage Junction Temperature
T
-40
-55
-
-
150
150
oC
oC
jmax
T
jmax
(1) ITRIP Cycle-by cycle current limit is internally set to 200A peak. The set point can be lowered by connecting a resistor
between Itrip-ref and Gnd. The set point can be increased by connecting a resistor between Itrip-ref and +5V ref
(2) Desaturation blanking maximum time is TBD and is only provided at the low-side IGBTs.
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SPM6G250-120D
SENSITRON
TECHNICAL DATA
DATASHEET 4109, REV ENG-
Schematic Diagram:
·
·
+15V
Floating
VCC
+15V Rtn
Sgnl Gnd
+V
·
HINA, Rtn
Q1H
806W
HIN1
HINA,
PhA
·
·
·
·
LINA, Rtn
Q1L
806W
Hall Sensor
LINA,
Gate
Floating
Driver
·
·
·
Q2H
HINB, Rtn
806W
HIN3
HINB,
·
PhB
Brk
·
·
Q2L
·
LINB, Rtn
Gbrk
806W
LIN1
LIN2
LINB,
·
Floating
Ebrk
·
·
·
HINC, Rtn
Q3H
Q3L
806W
Hall Sensor B
HINC,
·
PhC
·
LINC, Rtn
806W
Ceramic Cap
0.40mF, 1200V
LIN3
ITRIP
LINC,
·
·
+5Vref out
·
·
·
·
+VRtn
Over-Current-ref
Tso
Hall Sensor A
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SPM6G250-120D
SENSITRON
TECHNICAL DATA
DATASHEET 4109, REV ENG-
Package Drawing:
· 221 West Industry Court 3 Deer Park, NY 11729 3 (631) 586 7600 FAX (631) 242 9798 ·
· World Wide Web Site - http://www.sensitron.com · E-mail Address - sales@sensitron.com ·
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the Sensitron Semiconductor sales department for the latest version
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means of users’ fail-safe precautions or other arrangement.
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• 221 West Industry Court ꢀ Deer Park, NY 11729-4681 ꢀ (631) 586-7600 FAX (631) 242-9798 •
• World Wide Web - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •
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Three-Phase MOSFET BRIDGE With Gate Driver and Optical Isolation 600 VOLT 20 AMP
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