SGM2531/SGM2531A [SGMICRO]
Programmable Current Limit Switches;
| 型号： | SGM2531/SGM2531A |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | Programmable Current Limit Switches |
| 文件： | 总18页 (文件大小：1266K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM2531/SGM2531A
Programmable Current Limit Switches
GENERAL DESCRIPTION
FEATURES
The SGM2531 and SGM2531A are single-channel load
switches with controlled slew rate. The VOUT rise time
can be programmed by setting an additional capacitor
to the SS pin, which can minimize inrush current. The
devices contain an N-MOSFET that can operate over
an input voltage range of 4.5V to 22V. With precision 5%
current limit, the devices can provide excellent
accuracy and be well applied to many system
protection applications.
● Wide Input Voltage Range from 4.5V to 22V
with Surge up to 30V
● Low On-Resistance:
SOIC-8 (Exposed Pad): 60mΩ
TDFN-2×3-8BL: 50mΩ
● Programmable Output Ramp Time
● Programmable Current Limit: 100mA to 3A
● 5% Current Limit Accuracy at 1A
● Enable Interface Pin
● Full Set of Protections
Programmable under-voltage lockout or over-voltage
protection is used to turn off the device if the VIN drops
below or raises over a threshold value, 3% threshold
accuracy ensures tight that the downstream circuitry is
not damaged by unintended power supply. Fault
conditions are indicated by the nFLT pin.
Short-Circuit Protection
Over-Voltage Protection
Under-Voltage Lockout
Fault Condition Indication Pin (nFLT)
● Thermal Shutdown Options
SGM2531A: Auto-Retry
The SGM2531 and SGM2531A are available in Green
SOIC-8 (Exposed Pad) and TDFN-2×3-8BL packages.
SGM2531: Latch-Off
● -40℃ to +125℃ Junction Temperature Range
● Available in Green SOIC-8 (Exposed Pad) and
TDFN-2×3-8BL Packages
TYPICAL APPLICATION
APPLICATIONS
OUT
Input
IN
Output
R1
R2
Set-Top Boxes, Gaming Consoles
HDD and SSD Drives
Smart E-Meters
ENUV
nFLT
SGM2531/1A
COUT
OVP
SS
ILIM
R3
GND
CSS
eFuse/USB Switches
Adapter Power Cables
RILIM
Figure 1. Typical Application Circuit
SG Micro Corp
JANUARY2023–REV. A.1
www.sg-micro.com
SGM2531/SGM2531A
Programmable Current Limit Switches
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM
2531XPS8
XXXXX
SOIC-8 (Exposed Pad) -40℃ to +125℃
TDFN-2×3-8BL -40℃ to +125℃
SOIC-8 (Exposed Pad) -40℃ to +125℃
TDFN-2×3-8BL -40℃ to +125℃
SGM2531XPS8G/TR
SGM2531XTDC8G/TR
SGM2531AXPS8G/TR
SGM2531AXTDC8G/TR
Tape and Reel, 4000
Tape and Reel, 3000
SGM2531
2531
XXXX
SGM
2531AXPS8 Tape and Reel, 4000
XXXXX
SGM2531A
MF3
Tape and Reel, 3000
XXXX
MARKING INFORMATION
NOTE: XXXXX = Date Code, Trace Code and Vendor Code. XXXX = Date Code and Trace Code.
SOIC-8 (Exposed Pad)
TDFN-2×3-8BL
X X X X X
X X X X
Vendor Code
Trace Code
Date Code - Year
Trace Code
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
IN, OUT, ENUV, nFLT, OVP to GND................. -0.3V to 24V
IN, OUT to GND (Transient < 100μs) ................ -0.3V to 30V
SS, ILIM to GND.................................................. -0.3V to 6V
Package Thermal Resistance
SOIC-8 (Exposed Pad), θJA...................................... 46℃/W
TDFN-2×3-8BL, θJA.................................................. 90℃/W
Junction Temperature .................................................+150℃
Storage Temperature Range........................-65℃ to +150℃
Lead Temperature (Soldering, 10s) ............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................4000V
CDM ............................................................................1000V
RECOMMENDED OPERATING CONDITIONS
Supply Voltage.....................................................4.5V to 22V
Operating Junction Temperature Range......-40℃ to +125℃
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
SG Micro Corp
www.sg-micro.com
JANUARY 2023
2
SGM2531/SGM2531A
Programmable Current Limit Switches
PIN CONFIGURATIONS
(TOP VIEW)
(TOP VIEW)
GND
SS
1
2
3
4
8
7
6
5
OVP
ILIM
GND
SS
1
2
3
4
8
7
6
5
OVP
ILIM
GND
GND
ENUV
IN
nFLT
OUT
ENUV
IN
nFLT
OUT
SOIC-8 (Exposed Pad)
TDFN-2×3-8BL
PIN
1
NAME
FUNCTION
GND
SS
Ground.
Soft-Start Pin. The capacitor between SS and GND pins will set the slew rate according to the
application requirements.
2
Enable and Under-Voltage Lockout Input. Asserting ENUV pin high enables the device. As an
UVLO pin, the UVLO threshold is programmed by an external resistor divider.
3
ENUV
IN
4
Input Supply Voltage. Connect to a 4.5V to 22V power source.
Output of the Device.
5
OUT
nFLT
ILIM
Alert Open-Drain Output Pin. Fault conditions (over-voltage, overload, fast-trip or thermal shutdown
condition) are indicated by the nFLT pin.
6
Programming Current Limit Pin. A resistor between this pin and GND sets the overload and
short-circuit current limit levels. Do not leave this pin floating.
7
Over-Voltage Protection Pin. The over-voltage threshold is programmed by the resistor divider from
the power supply to the OVP terminal to GND. If a voltage on the OVP pin is higher than VOVPR, the
internal MOSFET will be turned off and protect the downstream load.
8
OVP
GND
Exposed
Pad
Ground.
SG Micro Corp
www.sg-micro.com
JANUARY 2023
3
SGM2531/SGM2531A
Programmable Current Limit Switches
ELECTRICAL CHARACTERISTICS
(TJ = -40℃ to +125℃, VIN = 4.5V to 22V, VENUV = 2V, VOVP = 0V, RILIM = 95.3kΩ, CSS = Open, nFLT = Open, typical values are at
TJ = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Supply Voltage and Internal Under-Voltage Lockout
Input Voltage Range
VIN
VUVR
4.5
2.3
70
22
2.45
120
250
2.5
V
V
UVLO Threshold Voltage, Rising
UVLO Hysteresis
2.36
95
VUVHYS
IQ_ON
IQ_OFF
mV
μA
μA
Supply Current, Enabled
VENUV = 2V, VIN = 12V
100
170
1
Supply Current, Disabled
VENUV = 0V, VIN = 12V
Over-Voltage Protection (OVP) Input
Over-Voltage Threshold Voltage, Rising
Over-Voltage Threshold Voltage, Falling
OVP Input Leakage Current
VOVPR
VOVPF
IOVP
1.35
1.3
1.39
1.34
1.43
1.38
100
V
V
0V ≤ VOVP ≤ 22V
-100
nA
Enable and Under-Voltage Lockout (ENUV) Input
ENUV Threshold Voltage, Rising
ENUV Threshold Voltage, Falling
VENR
VENF
1.35
1.3
1.39
1.34
1.43
1.38
V
V
ENUV Threshold Voltage to Reset
Thermal Fault, Falling
EN Input Leakage Current
VENF_RST
IENUV
0.46
-100
V
0 ≤ VENUV ≤ 22V
100
nA
Soft-Start: Output Ramp Control (SS)
SS Charging Current
ISS
RSS
VSS = 0V
0.82
280
1
1.25
420
µA
VENUV = 0V, ISS = 10mA sinking
VENUV = 1V, ISS = 10mA sinking
350
145
5.3
SS Discharging Resistance
Ω
SS Maximum Capacitor Voltage
SS to OUT Gain
VSSMAX
V
GAINSS ΔVOUT/ΔVSS
4.95
5.06
5.20
V/V
Current Limit Programming (ILIM)
ILIM Pin Bias Current
IILIM
4.3
5.02
5.7
µA
0.330
0.384
0.440
RILIM = 35.7kΩ, TJ = -40℃ to +85℃
0.425
0.95
0.92
1.41
0.330
0.42
0.95
0.92
1.420
0.484
1
0.545
1.05
1.08
1.70
0.455
0.56
1.05
1.08
1.720
RILIM = 45.3kΩ, TJ = -40℃ to +85℃
RILIM = 95.3kΩ, TA = TJ = +25℃
SOIC-8
(Exposed
Pad)
1
RILIM = 95.3kΩ, TJ = -40℃ to +85℃
RILIM = 150kΩ, TJ = -40℃ to +85℃
RILIM = 35.7kΩ, TJ = -40℃ to +85℃
RILIM = 45.3kΩ, TJ = -40℃ to +85℃
RILIM = 95.3kΩ, TA = TJ = +25℃
1.56
0.390
0.49
Current Limit
ILIMIT
A
TDFN-2×3-
8BL
1
1
RILIM = 95.3kΩ, TJ = -40℃ to +85℃
RILIM = 150kΩ, TJ = -40℃ to +85℃
1.575
1.65 × ILIMIT
Fast-Trip Comparator Threshold
IFAST-TRIP RILIM in kΩ
A
MOSFET Power Switch
SOIC-8 (Exposed Pad)
TDFN-2×3-8BL
25
20
60
50
110
85
FET On-Resistance
RDSON
mΩ
Pass FET Output (OUT)
OUT Bias Current in Off-State
ILKG_OUT VENUV = 0V, VOUT = 0V (Sourcing)
ISINK_OUT VENUV = 0V, VOUT = 300mV (Sinking)
-2
-1
0
0
2
1
µA
Fault Flag (nFLT): Active Low
Device in fault condition, VOVP = high,
InFLT = 100mA
Device not in fault condition, VnFLT = 0V, 22V
nFLT Pull-Down Resistance
RnFLT
5
17
0
35
Ω
nFLT Input Leakage Current
InFLT
-0.5
0.5
µA
Thermal Shutdown (TSD)
Thermal Shutdown Threshold, Rising
Thermal Shutdown Hysteresis
TTSD
THYS
150
20
℃
℃
SG Micro Corp
www.sg-micro.com
JANUARY 2023
4
SGM2531/SGM2531A
Programmable Current Limit Switches
TIMING REQUIREMENTS
(TJ = -40℃ to +125℃, VIN = 4.5V to 22V, VENUV = 2V, VOVP = 0V, RILIM = 95.3kΩ, CSS = Open, nFLT = Open, typical values are at
TJ = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Enable and Under-Voltage Lockout (ENUV) Input
Turn-On Delay
tON_DLY
ENUV↑ to VOUT = 1V, CSS = Open
90
2
µs
µs
Turn-Off Delay
tOFF_DLY
ENUV↓ to VOUT↓
Over-Voltage Protection (OVP) Input
OVP Disable Delay
tOVP_DLY
OVP↑ to nFLT↓
3
µs
ms
µs
Soft-Start: Output Ramp Control (SS)
ENUV↑ to VOUT = 11V, with CSS = Open,
COUT = 2.2µF
ENUV↑ to VOUT = 11V, with CSS = 1.2nF,
COUT = 2.2µF
0.12
2.3
0.24
2.8
0.38
3.4
Output Ramp Time
tSS
Current Limit Programming (ILIM
Fast-Trip Comparator Delay
Thermal Shutdown (TSD)
)
tFAST-TRIP_DLY IOUT > IFAST-TRIP
3
VIN = 12V
800
800
ms
ms
Retry Delay after Thermal Shutdown
tTSD_DLY
Recovery, TJ < [TTSD - 20℃]
VIN = 4.5V
PARAMETRIC MEASUREMENT INFORMATION
90%
VENUV
VOVP
10%
50%
tON_DLY
tOFF_DLY
90%
90%
VOUT
VOUT
tOVP_DLY
1V
Figure 2. tON_DLY and tOFF_DLY Waveforms
Figure 3. tOVP_DLY Waveforms
IFAST-TRIP
ILIMIT
IIN
tFAST-TRIP_DLY
Figure 4. tFAST-TRIP_DLY Waveforms
SG Micro Corp
www.sg-micro.com
JANUARY 2023
5
SGM2531/SGM2531A
Programmable Current Limit Switches
TYPICAL PERFORMANCE CHARACTERISTICS
VIN = 12V, CIN = 10μF, CSS = Open, typical values are at TJ = +25℃, unless otherwise noted.
Turn-On with Enable
Turn-On with Enable
VENUV
VENUV
VOUT
VOUT
VIN
VIN
CSS = Open
CSS = 1nF
Time (100μs/div)
Time (500μs/div)
ENUV Turn-On Delay: ENUV↑ to Output Ramp↑
ENUV Turn-Off Delay: ENUV↓ to VOUT↓
VENUV
VENUV
VOUT
VnFLT
IIN
VOUT
VnFLT
IIN
RnFLT = 100kΩ
RnFLT = 100kΩ
Time (20μs/div)
Time (20μs/div)
OVP Turn-On Delay: OVP↓ to Output Ramp↑
OVP Turn-Off Delay: OVP↑ to nFLT↓
VOVP
VOVP
VOUT
VOUT
VnFLT
VnFLT
IIN
IIN
RnFLT = 100kΩ
RnFLT = 100kΩ
Time (50μs/div)
Time (50μs/div)
SG Micro Corp
www.sg-micro.com
JANUARY 2023
6
SGM2531/SGM2531A
Programmable Current Limit Switches
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
VIN = 12V, CIN = 10μF, CSS = Open, typical values are at TJ = +25℃, unless otherwise noted.
Hot-Short: Fast-Trip Response and Current
Regulation
Hot-Short: Fast-Trip Response (Zoomed)
VnFLT
VnFLT
VOUT
VOUT
VIN
VIN
IOUT
IOUT
Time (20μs/div)
Time (2μs/div)
Current Regulation and OTP (CR Load)
VnFLT
VOUT
VIN
IIN
Time (500ms/div)
Supply Current vs. Input Voltage
Supply Current vs. Input Voltage
0.35
0.30
0.25
0.20
0.15
0.10
0.05
3.0
2.5
2.0
1.5
1.0
0.5
0.0
TJ = -40℃
TJ = -40℃
TJ = +25℃
TJ = +85℃
TJ = +125℃
TJ = +25℃
TJ = +85℃
TJ = +125℃
2.5
5
7.5
10
12.5
15
17.5
20
2.5
5
7.5
10
12.5
15
17.5
20
Input Voltage (V)
Input Voltage (V)
SG Micro Corp
www.sg-micro.com
JANUARY 2023
7
SGM2531/SGM2531A
Programmable Current Limit Switches
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
UVLO Threshold Voltage vs. Temperature
On-Resistance vs. Temperature
2.50
2.45
2.40
2.35
2.30
2.25
2.20
100
90
80
70
60
50
40
VUVR
VUVF
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
ENUV/OVP Threshold Voltage vs. Temperature
ENUV Threshold Voltage to Reset Thermal Fault vs. Temperature
1.0
1.42
1.40
1.38
1.36
1.34
1.32
1.30
0.9
VENR
VOVPR
0.8
VENF_RST
0.7
0.6
0.5
0.4
VOVPF
VENF
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
SS Charging Current vs. Temperature
SS to OUT Gain vs. Temperature
1.20
1.15
1.10
1.05
1.00
0.95
0.90
5.20
5.15
5.10
5.05
5.00
4.95
4.90
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
Temperature (℃)
Temperature (℃)
SG Micro Corp
www.sg-micro.com
JANUARY 2023
8
SGM2531/SGM2531A
Programmable Current Limit Switches
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
Output Ramp Time vs. CSS
Output Ramp Time vs. Temperature
1000
100
10
0.30
0.28
0.26
0.24
0.22
0.20
0.18
CSS = Open
TJ = -40℃
TJ = +25℃
TJ = +85℃
TJ = +125℃
1
-50 -25
0
25
50
75 100 125 150
1
10
100
CSS (nF)
Temperature (℃)
Current Limit vs. RILIM
Current Limit vs. Temperature
R = 35.7kΩ
R = 45.3kΩ
R = 95.3kΩ
R = 150kΩ
1.8
1.5
1.2
0.9
0.6
0.3
0.0
2.40
2.00
1.60
1.20
0.80
0.40
0.00
-50 -25
0
25
50
75 100 125 150
10
30
50
70
90 110 130 150 170
RILIM (kΩ)
Temperature (℃)
Accuracy (%) (Process, Voltage, Temperature)
vs. Current Limit
Accuracy (%) (Process, Voltage, Temperature)
vs. Current Limit
18
15
12
9
18
15
12
9
SOIC-8 (Exposed Pad)
TDFN-2×3-8BL
6
6
3
3
0
0
0.25
0.5
0.75
1
1.25
1.5
1.75
0.25
0.5
0.75
1
1.25
1.5
1.75
Current Limit (A)
Current Limit (A)
SG Micro Corp
www.sg-micro.com
JANUARY 2023
9
SGM2531/SGM2531A
Programmable Current Limit Switches
FUNCTIONAL BLOCK DIAGRAM
Current
Sense
IN
4
5
OUT
60mΩ/50mΩ *
+
-
Charge
Pump
2.36V
2.265V
-
0.46V
6
nFLT
+
+
-
ENUV
OVP
3
8
17Ω
VIN
1. 65 × ILIM IT
ILIMIT
Fast-Trip
Comparator
1.39V
1.34V
Gate
Control
&
-
+
-
5V
+
Logic
5V
OTP
5.02μA
+
-
1μA
7
ILIM
+
-
SS
2
1
5.06×
Constant
Power
Control
OUT
350Ω
GND
SGM2531
NOTE *: 60mΩ for SOIC-8 (Exposed Pad) Package.
50mΩ for TDFN-2×3-8BL Package.
Figure 5. Block Diagram
SG Micro Corp
www.sg-micro.com
JANUARY 2023
10
SGM2531/SGM2531A
Programmable Current Limit Switches
DETAILED DESCRIPTION
The SGM2531 family is an 8-pin, 4.5V to 22V eFuse
with thermal shutdown. To reduce voltage drop for low
voltage and high current rails, the device implements a
low on-resistance N-MOSFET which reduces the
dropout voltage across the device.
It is recommended to add an external bypass capacitor
between ENUV and GND pins to avoid the noise of
instability power or probabilistic power failure. The
ENUV falling edge deglitch delay is 1μs (TYP).
As an under-voltage lockout pin, the UVLO threshold is
programmed by an external resistor divider, as shown
in Figure 6.
The configurable rise time of the device greatly reduces
inrush current caused by large bulk load capacitances
or hot-plug boards, thereby reducing or eliminating
power supply drop. The current limit threshold can be
programmed between 0.1A and 3A through an external
resistor.
Once the input rail under-voltage, the N-MOSFET will
be turned off quickly. If this function is not needed,
connect the ENUV pin to the VIN rail to avoid it happens.
Do not leave the ENUV pin floating.
The device implements the input UVLO and sets two
UVLOs in combination with ENUV. If VIN < VUVF, the
device is disabled and ENUV can set the VIN rise
threshold, so the device can set the section active
voltage to avoid the input rail fluctuation.
When the output load exceeds the current limit
threshold or a short-circuit event is present, the device
limits the output current to a safe level by increasing the
on-resistance of the power switch. Continuous heavy
overloads and short-circuits that increase power
dissipation of the switch can cause the junction
temperature to rise, in which case thermal protection
circuit will shut off the switch to prevent damage.
SGM2531
IN
VIN
R1
ENUV
The device starts its operation by monitoring the VIN
bus. When VIN exceeds the under-voltage lockout
threshold, the device samples the ENUV pin. A high
level on this pin enables the internal N-MOSFET. When
VIN exceeds UVLO threshold and VENUV exceeds 1.39V,
the internal N-MOSFET of the device starts conducting
and allows current to flow from IN to OUT. When VENUV
is held low (below VENF), internal N-MOSFET is turned
+
-
EN
< 22V
Zener Diode
1.39V
1.34V
R2
R3
-
OVP
OVP
GND
+
VOVP = 1.39 × (R1 + R2 + R3)/R3
off. When the voltage of OVP pin is more than VOVPR
,
Figure 6. ENUV and Input OVP Set by R1, R2 and R3
the internal N-MOSFET is turned off and protects the
downstream load. The device also features a fault flag
output (nFLT) pin to monitor system status and control
downstream load. The device has a thermal protection
feature to protect itself against thermal damage due to
over-temperature.
Input Rail Over-Voltage Protection (OVP)
The SGM2531 family features over-voltage protection
function. The over-voltage threshold is programmed by
the resistor divider from the power supply to the OVP
terminal and to GND, as shown in Figure 6. If the
voltage of OVP pin is higher than VOVPR, the device
turns off the internal N-MOSFET. If not used, connect
this pin to GND.
Adjustable Enable and Under-Voltage
Lockout (UVLO)
The ENUV pin controls the state of the switch. In its
high state, the internal N-MOSFET is enabled. A low
level on this pin turns off the internal N-MOSFET. High
and low levels are specified in the electrical
characteristics of the datasheet.
SG Micro Corp
www.sg-micro.com
JANUARY 2023
11
SGM2531/SGM2531A
Programmable Current Limit Switches
DETAILED DESCRIPTION (continued)
Hot-Plug and Inrush Current Restrict
In the use of hot-plug boards, the surge current limits
the voltage drop of the backplane power supply voltage
and will lead to the unintended resets of the system
power supply. The capacitor between SS and GND pins
will set the slew rate according to the application
requirements. An approximate formula for the
relationship between CSS and slew rate is shown in
Equation 1:
Rise time can be calculated by multiplying the input
voltage by the slew rate. If floating this pin, the slew
rate of the output obtains a default value ~50V/ms
(minimum tSS).
Over-Current and Short-Circuit Protections
The device limits current to the output in case of output
shorts and overloads. If an event occurs, device goes
into current limit action, and the value of the current
limit (ILIMIT) is set by RILIM resistor:
CSS
dVOUT
ISS
=
×
(1)
GAINSS
dt
where:
SS = 1μA (TYP)
dVOUT/dt = Target output slew rate
ILIMIT = 10.3 × 10-3 × RILIM + 0.017
(4)
(5)
I
ILIMIT - 0.017
RILIM
=
10.3 × 10-3
GAINSS = ΔVOUT/ΔVSS = 5.06
where:
LIMIT is the value of overload current limit in A.
ILIM is the current limit programming resistor in kΩ.
I
R
SGM2531
In addition to the general over-current protection, the
SGM2531 family also integrates fast-trip over-current
protection with quicker response time.
1μA
SS
CSS
CINT
Overload Protection
When the output load exceeds the current limit
threshold, the internal current limit amplifier limits the
output current to the predetermined value by increasing
the on-resistance of the power switch. When
continuous heavy overloads increase the power
dissipation in the switch, causing the junction
temperature reach the thermal shutdown threshold, the
internal N-MOSFET is turned off. The fault pin (nFLT) is
asserted and will be pulled low to indicate a fault until
the thermal shutdown condition is released.
nSWEN
GND
350Ω
Figure 7. Output Ramp Time (tSS) is Set by CSS
Equation 2 shows how to calculate the total output
ramp time (tSS) when the output rises from 0V to VIN:
tSS = 19.5 × 104 × VIN × CSS
(2)
where CSS is in F.
The inrush current (IINRUSH) can be calculated as:
V
IN
I
= COUT ×
(3)
INRUSH
tSS
SG Micro Corp
www.sg-micro.com
JANUARY 2023
12
SGM2531/SGM2531A
Programmable Current Limit Switches
DETAILED DESCRIPTION (continued)
Short-Circuit Protection
A transient short-circuit occurs, due to the limited
bandwidth of the current limit amplifier, which cannot
respond quickly to this event. The SGM2531 family
contains a fast-trip comparator with a threshold
(IFAST-TRIP). If IOUT > IFAST-TRIP, the comparator turns off
the N-MOSFET and terminates the short-circuit peak
current across the N-MOSFET rapidly. The fast-trip
threshold is 1.65 times the overload current limit. The
fast-trip comparator can terminate the transient
short-circuit peak current, and then the current limit
Fault Response
The SGM2531 family has a fault output signal to
indicate the operation state of the device. When any of
over-voltage, over-current or thermal shutdown occurs,
the nFLT pin is pulled low. The nFLT pin is open-drain
output which can be connected to OUT or another
external voltage through an external pull-up resistor. If
not used, leave it floating or connect to GND.
Thermal Shutdown (TSD)
Thermal shutdown protects the device from excessive
temperature. Once the device is shut down due to TSD
fault, it would either stay latch-off (SGM2531) or restart
automatically after TJ drops below [TTSD - 20 ℃ ]
(SGM2531A).
function limits the output current to ILIMIT
.
IFAST-TRIP = 1.65 × ILIMIT
(6)
The IFAST-TRIP is fast-trip current limit. To prevent the
input voltage spike from damaging the device, a Zener
diode should be added. If the switching voltage of
SGM2531 family is more than 15V, the diode no more
than 22V (> 0.5W) is needed, as shown in Figure 6.
Shutdown Control
The device has a built-in over-temperature shutdown
circuitry designed to protect the internal N-MOSFETs if
the junction temperature exceeds TTSD. The internal
N-MOSFET can be remotely turned off by taking the
ENUV pin below its 1.34V threshold as shown in Figure
8. Upon releasing the ENUV pin, the device turns on
with soft-start cycle.
Startup with Output Shorted
For systems with short-circuit during startup, the
current is limited to ILIMIT. When the power dissipation of
the MOSFET is greater than 15W, it will be limited to
15W, and the ILIMIT will be decreased. After this, power
dissipation will lead to device thermal protection.
SGM2531
IN
VIN
R1
IN, OUT and GND Pins
To limit the voltage drop on the input supply caused by
transient inrush current when the switch turns on into a
discharged load capacitor, a capacitor needs to be
placed between IN and GND pins. Use a bypass
capacitor as close as possible between IN and GND
pins. Due to the integrated body diode in the
N-MOSFET, a CIN greater than COUT is highly
recommended. When the system power supply is
removed, COUT greater than CIN will cause VOUT to
exceed VIN.
ENUV
+
-
EN
1.39V
1.34V
μC
R2
GND
Figure 8. Shutdown Control
This will result in current flow through the body diode
from VOUT to VIN. A CIN to COUT ratio of 10 to 1 is
recommended for minimizing VIN dip caused by inrush
currents during startup. In the on-state condition, VOUT
can be calculated using the Equation 7:
VOUT = VIN - (RDSON × IOUT
)
(7)
where RDSON is the on-resistance of internal
N-MOSFET.
SG Micro Corp
www.sg-micro.com
JANUARY 2023
13
SGM2531/SGM2531A
Programmable Current Limit Switches
DETAILED DESCRIPTION (continued)
Operational Overview
The device function is shown in Table 1.
Smart Load Switch
The SGM2531 family can be used as a smart power
switch with wide input voltage range from 4.5V to 22V.
Table 1. Operational Overview of Device Functions
The devices
over-temperature protection, a fault indicate, and over-
or under-voltage lockout.
provide soft-start, current limit,
Device
SGM2531/SGM2531A
Inrush ramp controlled by SS pin via an external
capacitor.
Startup
Limit inrush current to IILIMIT level.
If TJ > TTSD, the device is shut down.
Current is limited to ILIMIT level.
Figure 9 shows the typical implementation and usage
as load switch. It is recommended to add
a
freewheeling diode across the load when load is highly
inductive.
Power dissipation increases as (VIN
increases. When the power dissipation exceeds
15W, it will be limited to 15W.
- VOUT)
Over-Current
Response
Enable
VIN
EN
IN
TJ > TTSD, the device is turned off.
Load
The SGM2531A will attempt restart tTSD_DLY after TJ <
[TTSD - 20℃].
OUT
SGM2531X
Fast turn-off when ILOAD > IFAST-TRIP
.
Optional
R1
R2
Short-Circuit
Response
According to the standard startup cycle, fast refresh
and limit the current to ILIMIT
OVP
ILIM
.
RILIM
Figure 9. Smart Load Switch Implementation
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
JANUARY 2023 ‒ REV.A to REV.A.1
Page
Added TDFN-2×3-8BL Package ........................................................................................................................................................................All
Changes from Original (JUNE 2022) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
SG Micro Corp
www.sg-micro.com
JANUARY 2023
14
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-8 (Exposed Pad)
D
e
3.22
E1
E
E2
2.33 5.56
1.91
b
D1
1.27
0.61
RECOMMENDED LAND PATTERN (Unit: mm)
L
ccc
C
A2
A
SEATING PLANE
A1
c
θ
C
Dimensions
In Millimeters
Symbol
MIN
MOD
MAX
1.700
0.150
1.650
0.510
0.250
5.100
3.420
4.000
6.200
2.530
A
A1
A2
b
0.000
1.250
0.330
0.170
4.700
3.020
3.800
5.800
2.130
-
-
-
c
-
D
-
D1
E
-
-
E1
E2
e
-
-
1.27 BSC
L
0.400
0°
-
-
1.270
8°
θ
ccc
0.100
NOTES:
1. This drawing is subject to change without notice.
2. The dimensions do not include mold flashes, protrusions or gate burrs.
3. Reference JEDEC MS-012.
SG Micro Corp
TX00013.003
www.sg-micro.com
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
TDFN-2×3-8BL
D
e
N5
N8
L
k
E
E1
D1
N1
b
N4
BOTTOM VIEW
TOP VIEW
1.63
0.65
1.75
2.95
A
A1
A2
SIDE VIEW
0.25
0.50
RECOMMENDED LAND PATTERN (Unit: mm)
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
0.800
0.050
MIN
0.028
0.000
MAX
0.031
0.002
A
A1
A2
D
0.700
0.000
0.203 REF
0.008 REF
1.950
1.530
2.950
1.650
0.200
2.050
1.730
3.050
1.850
0.300
0.077
0.060
0.116
0.065
0.008
0.081
0.068
0.120
0.073
0.012
D1
E
E1
b
e
0.500 BSC
0.250 REF
0.020 BSC
0.010 REF
k
L
0.300
0.450
0.012
0.018
NOTE: This drawing is subject to change without notice.
SG Micro Corp
TX00141.001
www.sg-micro.com
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
SOIC-8
(Exposed Pad)
13″
7″
12.4
9.5
6.40
2.30
5.40
3.30
2.10
1.10
4.0
4.0
8.0
4.0
2.0
2.0
12.0
8.0
Q1
Q2
TDFN-2×3-8BL
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
7″ (Option)
368
442
386
227
410
280
224
224
370
8
18
5
7″
13″
SG Micro Corp
www.sg-micro.com
TX20000.000
相关型号：
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