SGM41563 [SGMICRO]
Li+/Polymer Battery Charger with Low IQ Boost Operation;
| 型号： | SGM41563 |
| 厂家： | 
Shengbang Microelectronics Co, Ltd |
| 描述： | Li+/Polymer Battery Charger with Low IQ Boost Operation 电池 |
| 文件： | 总14页 (文件大小：642K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM41563
Li+/Polymer Battery Charger
with Low IQ Boost Operation
GENERAL DESCRIPTION
FEATURES
The SGM41563 is a linear charger for single-cell Li+/
polymer battery plus an ultra-low standby current boost
operation for generating a 5V output from the battery
power. Its wide input range allows charging with loose
regulated power like conducting coil, solar cells or
thermal coupling piles. The boost quiescent current
(0.68μA TYP) is affordable even for small cell always-on
standby application.
● Five Charge Voltage Options:
4.2V/4.25V/4.3V/4.35V/4.4V
● 5mA to 700mA Charger for Single-Cell Li+/
Polymer Battery
● Constant-Current/Constant-Voltage Charging
● Die Temperature Charge Current Regulation
● -4% Voltage Fold-Back Power Retaining
● +2% Path Resistive Loss Compensation
● Floating Charge Over-Time Termination
● Ultra-Low Quiescent Current
The SGM41563 is available in a Green SOIC-8 (Exposed
Pad) package.
● Programmable Charge Current
● Power-Saving Charging Indication
● Internal Over-Temperature Protection
● Available in a Green SOIC-8 (Exposed Pad) Package
APPLICATIONS
Rechargeable Battery Powered IoT Gadget
Self-Powered IoT Terminals
TYPICAL APPLICATION
Battery+
D
1
8
5V VOUT
Boost Output
GND
EN
IC
VOUT
L 2.2μH
2
7
EN
BAT
VIN
SW
IREF
GND
3
4
6
5
Charge Input
GND
nCHG
C3, C4, C5
10μF
C1, C2
1μF
EP
RIREF
B
GND
Figure 1. Typical Application Circuit
SG Micro Corp
MARCH2020–REV. A
www.sg-micro.com
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
PACKAGE/ORDERING INFORMATION
SPECIFIED
TEMPERATURE
RANGE
VCH
(V)
PACKAGE
DESCRIPTION
ORDERING
NUMBER
PACKAGE
MARKING
PACKING
OPTION
MODEL
SGM
CK9YPS8
XXXXX
SOIC-8
(Exposed Pad)
4.2
4.25
4.3
SGM41563-420YPS8G/TR
SGM41563-425YPS8G/TR
SGM41563-430YPS8G/TR
SGM41563-435YPS8G/TR
SGM41563-440YPS8G/TR
Tape and Reel, 4000
Tape and Reel, 4000
Tape and Reel, 4000
Tape and Reel, 4000
Tape and Reel, 4000
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
-40℃ to +85℃
SGM
CKAYPS8
XXXXX
SOIC-8
(Exposed Pad)
SGM
CKBYPS8
XXXXX
SOIC-8
(Exposed Pad)
SGM41563
SGM
CKCYPS8
XXXXX
SOIC-8
(Exposed Pad)
4.35
4.4
SGM
CKDYPS8
XXXXX
SOIC-8
(Exposed Pad)
MARKING INFORMATION
NOTE: XXXXX = Date Code, Trace Code and Vendor Code.
X X X X X
Vendor Code
Trace Code
Date Code - Year
Green (RoHS & HSF): SG Micro Corp defines "Green" to mean Pb-Free (RoHS compatible) and free of halogen substances. If
you have additional comments or questions, please contact your SGMICRO representative directly.
OVERSTRESS CAUTION
ABSOLUTE MAXIMUM RATINGS
Voltage Range
Stresses beyond those listed in Absolute Maximum Ratings
may cause permanent damage to the device. Exposure to
absolute maximum rating conditions for extended periods
may affect reliability. Functional operation of the device at any
conditions beyond those indicated in the Recommended
Operating Conditions section is not implied.
VIN to GND...................................................... -0.3V to 10V
EN, SW, VOUT, IREF to GND............................ -0.3V to 6V
BAT to GND .................................................... -0.3V to 5.5V
nCHG to GND............................................... -0.3V to 13.2V
Package Thermal Resistance
SOIC-8 (Exposed Pad), θJA ....................................... 42℃/W
Junction Temperature.................................................+150℃
Storage Temperature Range.......................-65℃ to +150℃
Lead Temperature (Soldering, 10s)............................+260℃
ESD Susceptibility
ESD SENSITIVITY CAUTION
This integrated circuit can be damaged if ESD protections are
not considered carefully. SGMICRO recommends that all
integrated circuits be handled with appropriate precautions.
Failureto observe proper handlingand installation procedures
can cause damage. ESD damage can range from subtle
performance degradation tocomplete device failure. Precision
integrated circuits may be more susceptible to damage
because even small parametric changes could cause the
device not to meet the published specifications.
HBM.............................................................................4000V
CDM ............................................................................1000V
RECOMMENDED OPERATING CONDITIONS
Supply Voltage Range ........................................2.7V to 7.5V
Operating Junction Temperature Range......-40℃ to +125℃
Operating Ambient Temperature Ranges.......-40℃ to +85℃
DISCLAIMER
SG Micro Corp reserves the right to make any change in
circuit design, or specifications without prior notice.
SG Micro Corp
www.sg-micro.com
MARCH 2020
2
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
PIN CONFIGURATION
(TOP VIEW)
GND
IC
EN
1
2
3
4
8
7
6
5
VOUT
SW
BAT
VIN
IREF
nCHG
SOIC-8 (Exposed Pad)
PIN DESCRIPTION
PIN
NAME
TYPE
FUNCTION
1
IC
IC
Internal Connection. Connect this pin to ground.
Boost Enable Input. This is a logic input pin to disable or enable the boost converter. Drive
to logic low to disable the boost. Drive to logic high to enable the boost. Do not leave it
floating.
2
EN
I
Battery. Output to the battery and/or system load, for charging and/or powering the
system. The boost circuit is internally connected to this node as its bias.
3
4
5
BAT
VIN
IO
P
Power Input. For powering this device and feeding to the BAT output.
Charging Indication. This pin blinks during charging and keeps on for about 52s when the
end-of-charge (EOC) condition is qualified.
nCHG
O
Maximum Charge Current Programming and Charge Disable Input. Drive to logic high to
disable the charger. Connect a resistor between this pin and GND to set the charge
current limit determined by the following equations:
6
IREF
IO
ICHG < 400mA, ICHG (mA) = 24000/RIREF (kΩ);
ICHG > 400mA, ICHG (mA) = 20500/RIREF (kΩ) + 58mA.
7
8
SW
IO
O
Chopping Output of the Boost. It is connected to the power inductor.
Boost Converter Output. Place storage capacitor(s) close to this pin and clip between this
pin and ground.
VOUT
GND
Exposed
Pad
G
Ground of the Circuit.
NOTE: I: Input, O: Output, IO: Input or Output, G: Ground, P: Power for the Circuit, IC: Internal Connection.
SG Micro Corp
www.sg-micro.com
MARCH 2020
3
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
ELECTRICAL CHARACTERISTICS
(TJ = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
No Load Operation Current
INO_OP
Test with the typical application circuit in Figure 1
70
μA
Charger Only (VVIN = 5V, VBAT = 3.6V, RIREF = 120kΩ, nCHG floating.)
Operation Input Range
Charge Current Range
Retaining Current
VOP_RANGE
ICH_RANGE
IRETAINING
IFB_RANGE
2.7
5
7.5
V
700
mA
mA
mA
μA
μA
μA
μA
V
Force the output voltage to 2V, RIREF = 120kΩ
VVIN - VBAT = 1V, RIREF = 13kΩ
200
700
9
VIN-BAT Current
IBAT_REVERSE VVIN = 3V, VBAT = 5.2V, the current into BAT
12
1
IBAT_LK
ISHUT
INOT_CHG
VCH
VCH_ERR
VDH
VVIN = floating, VBAT = 5.2V, the current into BAT
VVIN = 6V, VIREF = 5.5V, VEN = 0V, the current into VIN
VVIN = 5V, IBAT = 0mA, the current into VIN
4.2V to 4.4V, 5 voltage options, in 50mV steps
IBAT = 20mA
0.08
7.5
72
No Operation Current
10
110
4.4
28
Charge Voltage
4.2
-28
Charge Voltage Error
Charge Start Voltage
Reverse Block Start Voltage
mV
mV
mV
VVIN - VBAT, up-going
310
25
VDL
VVIN - VBAT, down-going
RIREF = 120kΩ
173
33.6
56.5
200
40
227
46.4
64.5
Charge Current
at Specific RIREF Setting
ICHG
mA
RIREF = 600kΩ
Pre-condition Charge Voltage
VRPR
VRDC
Percentage to VCH
60
%
%
Path Resistive Loss
Compensation Voltage
Drop Compensation Check
Voltage
Add percentage to VCH
1.2
2
2.7
VDCC
VFB
Drop percentage to VCH
Drop percentage to VCH
0.3
3.3
2.2
4
4
%
%
Fold-Back Voltage
4.6
Drop percentage to VCH for floating time counting;
drop percentage to VFB for recharging
Floating and Recharge Voltage
VFLTING_RC
1.5
3
%
End of Charge Current
IEOC
IPR
Percentage to ICHG
Percentage to ICHG
15
3
20
7.5
44
25
%
%
Pre-Condition Charge Current
Floating Charge Time
14.5
tFLTING
tSYS_PRE
tON
Min
ms
ms
s
System Load Pre-charge
Charge-On Sinking Time
Charge-On Driving Cycle Time
End of Charge Sinking Time
21
160
1.28
51.2
tC
tEOC
s
Charge Current Regulated
Temperature
TCUT
130
℃
IO Characteristics for Indication Drive and Logic Control Input
Charge Disable Voltage
nCHG Low Sinking
nCHG Leakage
VTIREF
ISNK
1.6
V
Pull nCHG to 5V
Pull nCHG to 5V
3.6
mA
μA
ILKG
0.01
SG Micro Corp
www.sg-micro.com
MARCH 2020
4
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
ELECTRICAL CHARACTERISTICS (continued)
(TJ = +25℃, unless otherwise noted.)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Boost Only (VBAT = 2.7V to 5.2V, CBAT = 10μF, CVOUT = 20μF, typical values are at VBAT = 3.7V.)
VOUT_PWM
VOUT_PFM
IOUT_RANGE
VBAT < VVOUT, in PWM mode operation
VBAT < VVOUT, in PFM mode operation
4.84
5.00
5.04
500
0.08
0.6
5.09
Output Voltage
V
Output Current
mA
μA
μA
A
Quiescent Current into BAT Pin
Quiescent Current into VOUT Pin
Peak Current Limit
No load, not switching
No load, not switching, boost or down mode
boost operation
0.6
1
IQ
ILIM
fSW
0.89
0.98
1.3
1.62
1.35
420
410
Switch Frequency
VBAT = 3.7V
1.2
MHz
mΩ
mΩ
℃
Low-side Switch On-Resistance
High-side Switch On-Resistance
Boost Stop Temperature
Resuming Temperature
Control Logic
RON_L
RON_H
TOT
300
320
150
25
The temperature boost stops
THYS
Temperature drop for boost resuming operation
℃
EN High Threshold
VIH
VIL
1.20
V
V
EN Low Threshold
0.40
0.3
EN Input Leakage
IEN_LKG
VBAT = VEN = 5V
μA
SG Micro Corp
www.sg-micro.com
MARCH 2020
5
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
TYPICAL PERFORMANCE CHARACTERISTICS
TJ = +25℃, VVIN = 5V, EN = VBAT, VBAT = 3.6V, unless otherwise noted.
Efficiency with Different Load Current
Standby Current with Different Battery Voltage
2.5
2
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1.5
1
0.5
0
VBAT = 3.6V
VIN floating
ILOAD = 0mA
V
VOUT = 5V
2.5
2.8
3.1
3.4
3.7
4
4.3
4.6
0.001 0.01
0.1
1
10
100
1000
Battery Voltage (V)
Output Current (mA)
nCHG Current with Different Pull-Up Voltage
30V VIN Voltage Surge Response
4
3.5
3
VIN
2.5
2
IIN
1.5
0
2
4
6
8
10
12
14
Time (20μs/div)
VnCHG (V)
500mA Charge V/I Curve (No Battery Protection)
VBAT = 0.2V
500mA Charge V/I Curve (With Battery Protection) (1)
VBAT = 0.2V
6
5
4
3
2
1
0
600
500
400
300
200
100
0
6
5
4
3
2
1
0
600
500
400
300
200
100
0
Battery Voltage
Battery Voltage
Charge Current
Charge Current
0
0.3
0.6
0.9
1.2
1.5
0
0.3
0.6
0.9
1.2
1.5
Time (Hours)
Time (Hours)
SG Micro Corp
www.sg-micro.com
MARCH 2020
6
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
TYPICAL PERFORMANCE CHARACTERISTICS (continued)
TJ = +25℃, VVIN = 5V, EN = VBAT, VBAT = 3.6V, unless otherwise noted.
500mA Charge V/I Curve (With Battery Protection)
6
5
4
3
2
1
0
600
500
400
300
200
100
0
VBAT = 3V
Battery Voltage
Charge Current
0.9
0
0.3
0.6
1.2
1.5
Time (Hours)
NOTE:
1. The plot is acquired in test with a battery pack with the SGM41100 series battery protector. Voltage profile in range < 2.5V
reflects the protector behavior, and the current profile droop is path resistance dependent.
SG Micro Corp
www.sg-micro.com
MARCH 2020
7
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
FUNCTIONAL BLOCK DIAGRAM
SGM41563
VIN
BAT
+
VOS
BAT
Boost Block
-
VREF: 1V
+
EA
VREF
+
_
UVLO
VREF
Pre
Reg
VIN
Enable
VOUT
SW
VCC
Charge
Control
VCC
1.2MHz
Die
Temp
IREF
+
_
nCHG
130℃
Charge Block
GND
GND
EN
Figure 2. Block Diagram
ESSENTIAL SEQUENCE
VVIN
VVIN - VBAT > VDH_MAX and UVLO releases.
V
VIN - VBAT < VDH_MIN or UVLO traps.
0V
Bias to VVIN
Back-gate bias for charging regulation.
Bias to VBAT
Back-gate bias for
reverse block
System pre-charge only occurs during power-up and
battery voltage is lower than pre-charge threshold.
Pre-condition charging if battery voltage low.
IBAT
tSYS_PRE
End of charge or floating time-out.
Output voltage fold-back starts.
tC
tEOC
nCHG
tON
Current sinking
Figure 3. Essential On/Off Timing
SG Micro Corp
MARCH 2020
www.sg-micro.com
8
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
DETAILED DESCRIPTION
The SGM41563 has a linear battery charger block with
low IQ boost operation which is biased from the BAT pin. It
only consumes ultra-low quiescent current less than 1μA,
which is designed for the always-on standby applications.
current level for charge termination detection while the
bigger portion of charge current goes into load instead
of into current.
Charging Procedure, Start, End of Charge, Power
Retaining and Restart: There are two kinds of charge
procedure, charging a battery cell without any battery
protector and with a battery protector. The devices'
native charging procedure is recorded with a battery
without any protector, in which the system pre-charge,
battery pre-charge, floating, end of charge and safe
fold-back power retaining are included. When charging
a battery with a protector, the start-end curve is affected
by the protector's behavior and the residual battery
voltage is kept by the protector, in which the BAT
voltage raises too fast that no much difference to
chargers with a battery FET.
The Linear Charger
The charger block uses a CC/CV charge profile, plus
the following added features for improving safety,
suitability and availability:
System Load Pre-charge: When power up in the
situation that the battery terminal voltage is below the
pre-condition voltage threshold, the output with
maximum current limit for tSYS_PRE to provide enough
current for the system to start up with no battery or with
a battery in under-voltage protection state.
Wide Available Input Range: Charging is kept when
the input voltage is high or when the supply could not
maintain enough voltage and current. The charge
current is regulated for no over-heating the device or
maintains minimum drop-out for no reverse leakage,
even the current could not be maintained continuously.
The charge procedure is provided as a constant current
and constant voltage, with a system pre-charge at
power up and a pre-condition charging if the battery
voltage is lower than the fast charging threshold. The
end of charge is qualified when the charge current falls
to the termination current in the floating charge period
or floating timer runs out of time, once or after the path
resistive loss compensated. Charge procedure
parameters are illustrated in Figure 3 as well, in which
timing is not scaled for showing details in short time
intervals.
Voltage Fold-Back Power Retaining: When EOC
condition is qualified, lower the output to a safe voltage
while release the current limit to the maximum, retain
powering the load system. The fold-back does not sink
charge back out of the battery and avoids discharging
and recharging cycling in continuous plugged-in
situation.
Charge Current Programming: The current passing
through the VIN to BAT path is sampled and the current
is proportional to the path current that is fed out of the
IREF pin. The proportional current goes through the
RIREF and makes a voltage drop over the RIREF
proportional to the path current. The current regulation
loop controls the path resistance to make the drop
equal to an internal reference voltage unless the
voltage regulation loop takes control. The current
sample ratio, RIREF and the internal reference voltage
decide the path current when the current loop takes
control. The relationship between the RIREF and the
path current is represented as:
Floating Charge Time-Out: When charging with high
system load that sinks more than the end of charge
residual current, charging stops when the battery
voltage stays higher than floating charge voltage for
over tFLTING and turns in the end of charge fold-back
power retaining.
Over-Temperature Charge Regulation: The device
senses temperature with its on-die sensing circuit.
When the die temperature reaches TCUT, the charge
current is reduced for maintaining the temperature.
Path Resistive Loss Compensation and Charge
Termination Current: Once the end of charge condition
is detected the first time, the charge is turned to output
VFB while the VBAT is checked; a drop is seen as the
current in the charge path falls. If the drop is significant,
more than VDCC, the output voltage is then increased to
VRDC to compensate as the excessive loss drop
detected. This allows using relative high residual
ICHG = 24000/RIREF (kΩ) for ICHG < 400mA
ICHG = 58(mA) + 20500/RIREF (kΩ) for ICHG > 400mA
SG Micro Corp
www.sg-micro.com
MARCH 2020
9
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
DETAILED DESCRIPTION (continued)
Careful Handling to In-Rush and Out-Rush: In-rush
voltage surge or out-rush voltage surge might occur
and damage the low voltage pins BAT and VOUT
during the battery attaching or the supply applying in
production test in the always-on circuit showed in
Figure 4.
The Boost Converter
The boost block operates in peak-current PWM mode
in normal load condition, and turns into power-saving
skip mode in light load condition. The power input to
load is disconnected when it is disabled by pulling EN
low.
It is recommended to place TVS diodes clipping to the
BAT pin and VOUT pin for surge absorption. However,
if you decide not to use TVS diodes, the R1 and C6 are
alternatives in the always-on application, which inserts
a short delay to EN enabling after battery attaching or
test supply contact, to avoid the boost starting during
the voltage surge. The larger capacitances of C4 and
C5, as shown in Figure 4, are recommended to
lowering the out-rush voltage surge caused by load
contact bouncing, which is usual situation in frequent
load assertion applications like TWS case, where the
load contact capacitance should be less than 1/10 of
the total capacitances of the C4 and C5 practically.
In addition to the normal regulation, both the peak
inductor current and the output voltage are monitored
for over-current protection and short circuit protection.
Whenever the peak current reaches ILIM, the low-side
switch is turned off. Whenever the output voltage falls
below 2.2V, the output is pre-charged through the
high-side switch that has a current limit for about
200mA. The switching operation stops whenever the
output voltage is higher than the over-voltage
protection threshold (VOV), or the die temperature is
higher than the over-temperature threshold (TOT).
LED
SGM41563
1
8
7
5V VOUT
IC
VOUT
Earphone
L 2.2μH
R1
2
EN
BAT
VIN
SW
IREF
BAT
GND
10kΩ
3
4
6
5
nCHG
C5
22μF
C3
C4
C1
C2
C6
Charge
Input
RIREF
EP
10μF 22μF
1μF 1μF
0.1μF
GND
Earphone
Figure 4. Typical Application Circuit for Always-on Boost in TWS Charger Case
SG Micro Corp
www.sg-micro.com
MARCH 2020
10
Li+/Polymer Battery Charger
with Low IQ Boost Operation
SGM41563
APPLICATION INFORMATION
The typical application circuit with the recommended
component parameters is shown in Figure 1. The boost
keeps stable if reducing the input decoupling
capacitance and the output storage capacitance to half
value if not care about the increasing of the output
voltage ripple amplitude and the input current ripple
amplitude.
Layout Consideration: The inductor current alternates
between the ground EP and the output storage
capacitors C4 - C5, while the input decoupling
capacitor C3 makes the return loop of the inductor
current ripple. Refer to Figure 5; it makes the ripple
current loop as small as possible for stable and low loss
operation.
Inductor Selection: The low DCR inductor of 2.2μH
with the saturation current and the thermal limited
current > 1.4A is recommended.
Top Layer
BAT
Bottom Layer
Top Solder
Via
C4
C5
L
1
2
3
4
8
7
6
5
IC
VOUT
SW
OUT
EN
EN
VIN
(GND)
C2
BAT
VIN
IREF
nCHG
LED
RIREF
C1
GND
Figure 5. Layout Recommendation
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (MARCH 2020) to REV.A
Page
Changed from product preview to production data.............................................................................................................................................All
SG Micro Corp
www.sg-micro.com
MARCH 2020
11
PACKAGE INFORMATION
PACKAGE OUTLINE DIMENSIONS
SOIC-8 (Exposed Pad)
3.302
D
e
E1
E
2.413 5.56
E2
1.91
b
D1
1.27
0.61
RECOMMENDED LAND PATTERN (Unit: mm)
L
A
A1
c
θ
A2
Dimensions
In Millimeters
Dimensions
In Inches
Symbol
MIN
MAX
MIN
MAX
0.067
0.004
0.061
0.020
0.010
0.201
0.134
0.157
0.244
0.099
A
A1
A2
b
1.700
0.100
1.550
0.510
0.250
5.100
3.402
4.000
6.200
2.513
0.000
1.350
0.330
0.170
4.700
3.202
3.800
5.800
2.313
0.000
0.053
0.013
0.007
0.185
0.126
0.150
0.228
0.091
c
D
D1
E
E1
E2
e
1.27 BSC
0.050 BSC
L
0.400
0°
1.270
8°
0.016
0°
0.050
8°
θ
SG Micro Corp
www.sg-micro.com
TX00013.000
PACKAGE INFORMATION
TAPE AND REEL INFORMATION
REEL DIMENSIONS
TAPE DIMENSIONS
P2
P0
W
Q2
Q4
Q2
Q4
Q2
Q4
Q1
Q3
Q1
Q3
Q1
Q3
B0
Reel Diameter
P1
A0
K0
Reel Width (W1)
DIRECTION OF FEED
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF TAPE AND REEL
Reel Width
Reel
Diameter
A0
B0
K0
P0
P1
P2
W
Pin1
Package Type
W1
(mm)
(mm) (mm) (mm) (mm) (mm) (mm) (mm) Quadrant
SOIC-8
(Exposed Pad)
13″
12.4
6.40
5.40
2.10
4.0
8.0
2.0
12.0
Q1
SG Micro Corp
TX10000.000
www.sg-micro.com
PACKAGE INFORMATION
CARTON BOX DIMENSIONS
NOTE: The picture is only for reference. Please make the object as the standard.
KEY PARAMETER LIST OF CARTON BOX
Length
(mm)
Width
(mm)
Height
(mm)
Reel Type
Pizza/Carton
13″
386
280
370
5
SG Micro Corp
www.sg-micro.com
TX20000.000
相关型号：
SGM41600
I2C Controlled 6A Single-Cell Switched-Capacitor Fast Charger with Bypass Mode and ADC
SGMICRO
©2020 ICPDF网 联系我们和版权申明