SM3117NSUC-TRG [SINOPWER]
N-Channel Enhancement Mode MOSFET;
| 型号： | SM3117NSUC-TRG |
| 厂家： | 
Sinopower Semiconductor Inc |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总11页 (文件大小：242K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SM3117NSU
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
•
30V/50A,
D
RDS(ON)=7.2mΩ (max.) @ VGS=10V
RDS(ON)=9.8mΩ (max.) @ VGS=4.5V
S
G
•
•
•
•
Provide Excellent Qgd x Rds-on
100% UIS + Rg Tested
Top View of TO-252-2
Reliable and Rugged
D
Lead Free and GreenDevices Available
(RoHSCompliant)
G
Applications
•
Power Management in Desktop Computer or
DC/DC Converters.
S
N-ChannelMOSFET
Ordering and Marking Information
Package Code
SM3117NS
U : TO-252-2
Operating Junction Temperature Range
C : -55 to 150 oC
Assembly Material
Handling Code
Handling Code
TR : Tape & Reel
Assembly Material
Temperature Range
Package Code
G : Halogen and Lead Free Device
SM3117NS U :
XXXXX - Lot Code
SM3117N
XXXXX
Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate
termination finish; which are fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the lead-
free requirements of IPC/JEDEC J-STD-020D for MSL classification at lead-free peak reflow temperature. SINOPOWER
defines “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl does not exceed 900ppm by weight
in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).
SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and
advise customers to obtain the latest version of relevant information to verify before placing orders.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Absolute Maximum Ratings (TA = 25°C Unless Otherwise Noted)
Symbol
Parameter
Rating
Unit
Common Ratings
30
±20
150
-55 to 150
30
VDSS
VGSS
TJ
Drain-Source Voltage
Gate-Source Voltage
V
°C
°C
A
Maximum Junction Temperature
Storage Temperature Range
TSTG
IS
Diode Continuous Forward Current
TC=25°C
120
85
IDP
Pulse Drain Current Tested
Continuous Drain Current
A
A
TC=100°C
TC=25°C
50*
40
a
ID
TC=100°C
TC=25°C
50
PD
Maximum Power Dissipation
W
TC=100°C
Steady State
t ≤ 10s
20
RθJC
Thermal Resistance-Junction to Case
Thermal Resistance-Junction to Ambient
2.5
°C/W
°C/W
20
c
RθJA
Steady State
L=0.1mH
L=0.1mH
60
b
IAS
Avalanche Current, Single pulse
Avalanche Energy, Single pulse
26
A
b
EAS
33.8
mJ
Note a,*：Current limited by bond wire.
Note b：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Note c：Surface Mounted on 1in2 pad area, t =999sec.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
30
-
-
1
V
VGS=0V, IDS=250µA
VDS=24V, VGS=0V
-
-
IDSS Zero Gate Voltage Drain Current
µA
TJ =85°C
-
-
30
2.5
±100
7.2
-
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
1.5
1.8
-
V
VDS=VGS, IDS=250µA
VGS=±20V, VDS=0V
VGS=10V, IDS=30A
-
-
-
-
-
nA
5.9
8.9
7.6
70
d
RDS(ON) Drain-Source On-state Resistance
TJ =125°C
mΩ
S
VGS=4.5V, IDS=15A
VDS=5V, IDS=30A
9.8
-
Gfs
Forward Transconductance
Diode Characteristics
d
VSD
trr
Diode Forward Voltage
ISD=15A, VGS=0V
-
-
-
-
-
0.85
20
11
9
1.1
V
Reverse Recovery Time
Charge Time
-
-
-
-
ta
ns
nC
IDS=15A, dlSD/dt=100A/µs
tb
Discharge Time
Qrr
Reverse Recovery Charge
10
Dynamic Characteristics e
RG
Ciss
Coss
Crss
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
0.7
1
1.5
Ω
Input Capacitance
980 1180 1400
VGS=0V,
VDS=15V,
Frequency=1.0MHz
Output Capacitance
Reverse Transfer Capacitance
158
190
115
11
228
140
20
pF
90
-
td(ON) Turn-on Delay Time
tr Turn-on Rise Time
td(OFF) Turn-off Delay Time
tf Turn-off Fall Time
Gate Charge Characteristics e
VDD=15V, RL=15Ω,
IDS=1A, VGEN=10V,
RG=6Ω
-
12
22
ns
-
36
60
-
10
19
VDS=15V, VGS=4.5V,
IDS=30A
Qg
Total Gate Charge
-
10
12
Qg
Qgth
Qgs
Qgd
Total Gate Charge
-
-
-
-
20
2.2
3.5
4.2
24
2.7
4.1
4.7
nC
Threshold Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDS=15V, VGS=10V,
IDS=30A
Note d：Pulse test ; pulse width≤300µs, duty cycle≤2%.
Note e：Guaranteed by design, not subject to production testing.
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Typical Operating Characteristics
Drain Current
Power Dissipation
60
60
50
40
30
20
10
0
50
40
30
20
10
TC=25oC
0
TC=25oC,VG=10V
0
20 40 60 80 100 120 140 160
0
20 40 60 80 100 120 140 160
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
Thermal Transient Impedance
2
1
400
100
Duty = 0.5
0.2
0.1
1ms
0.05
0.1
0.01
1E-3
10ms
0.02
0.01
10
1
100ms
1s
DC
Single Pulse
Mounted on 1in2 pad
TC=25OC
R
θJA :60oC/W
0.1
0.01
1E-4 1E-3 0.01 0.1
1
10 100 1000
0.1
1
10
100
Square Wave PulseDuration (sec)
VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Output Characteristics
120
100
80
60
40
20
0
14
12
10
8
VGS= 4.5,5,6,7,8,9,10V
4V
VGS=4.5V
VGS=10V
3.5V
3V
6
4
2.5V
2.0
2
0.0
0.5
1.0
1.5
2.5
3.0
0
20
40
60
80
100
120
VDS - Drain - Source Voltage (V)
ID -Drain Current (A)
Gate-Source On Resistance
Gate Threshold Voltage
30
25
20
15
10
5
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
IDS=30A
IDS =250µA
0
-50 -25
0
25 50 75 100 125 150
2
3
4
5
6
7
8
9
10
Tj - Junction Temperature (°C)
VGS - Gate - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Typical Operating Characteristics (Cont.)
Drain-Source On Resistance
Source-Drain Diode Forward
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
100
10
1
VGS = 10V
IDS = 30A
Tj=150oC
Tj=25oC
RON@Tj=25oC: 5.9mΩ
0.1
-50 -25
0
25 50 75 100 125 150
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Tj - Junction Temperature (°C)
VSD - Source - Drain Voltage (V)
Capacitance
Gate Charge
1600
1400
1200
1000
800
600
400
200
0
10
Frequency=1MHz
VDS= 15V
IDS= 30A
9
8
7
6
5
4
3
2
1
0
Ciss
Coss
Crss
0
4
8
12
16
20
0
5
10
15
20
25
30
QG -Gate Charge (nC)
VDS - Drain - Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Typical Operating Characteristics (Cont.)
Transfer Characteristics
100
90
80
70
60
50
40
Tj=125oC
30
Tj=-55oC
20
10
Tj=25oC
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
VGS - Gate-Source Voltage (V)
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Avalanche Test Circuit and Waveforms
VDS
L
VDSX(SUS)
tp
DUT
VDS
IAS
RG
VDD
VDD
IL
tp
EAS
0.01Ω
tAV
Switching Time Test Circuit and Waveforms
VDS
RD
VDS
90%
DUT
VGS
RG
VDD
10%
VGS
tp
td(on) tr
td(off) tf
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Disclaimer
Sinopower Semiconductor, Inc. (hereinafter “Sinopower”) has been making
great efforts to development high quality and better performance products to
satisfy all customers’ needs. However, a product may fail to meet customer’s
expectation or malfunction for various situations.
All information which is shown in the datasheet is based on Sinopower’s
research and development result, therefore, Sinopower shall reserve the right
to adjust the content and monitor the production.
In order to unify the quality and performance, Sinopower has been following
JEDEC while defines assembly rule. Notwithstanding all the suppliers
basically follow the rule for each product, different processes may cause
slightly different results.
The technical information specified herein is intended only to show the typical
functions of and examples of application circuits for the products. Sinopower
does not grant customers explicitly or implicitly, any license to use or exercise
intellectual property or other rights held by Sinopower and other parties.
Sinopower shall bear no responsible whatsoever for any dispute arising from
the use of such technical information.
The products are not designed or manufactured to be used with any
equipment, device or system which requires an extremely high level of
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Classification Profile
10
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
SM3117NSU
®
Classification Reflow Profiles
Profile Feature
Preheat & Soak
Sn-Pb Eutectic Assembly
Pb-Free Assembly
150 C
100 C
°
°
Temperature min (Tsmin
)
Temperature max (Tsmax
Time (Tsmin to Tsmax) (ts)
150 C
200 C
°
°
)
60-120 seconds
60-120 seconds
Average ramp-up rate
(Tsmax to TP)
3 C/second max.
°
3 C/second max.
°
Liquidous temperature (TL)
Time at liquidous (tL)
183 C
60-150 seconds
217 C
60-150 seconds
°
°
Peak package body Temperature
(Tp)*
See Classification Temp in table 1
See Classification Temp in table 2
30** seconds
Time (t )** within 5 C of the specified
°
P
20** seconds
classification temperature (Tc)
Average ramp-down rate (Tp to Tsmax
)
6 C/second max.
°
6 C/second max.
°
6 minutes max.
8 minutes max.
Time 25 C to peak temperature
°
* Tolerance for peak profile Temperature (Tp) is defined as a supplier minimum and a user maximum.
** Tolerance for time at peak profile temperature (tp) is defined as a supplier minimum and a user maximum.
Table 1. SnPb Eutectic Process – Classification Temperatures (Tc)
Volume mm3
Package
Volume mm3
Thickness
<350
≥350
<2.5 mm
235 °C
220 °C
220 °C
220 °C
≥2.5 mm
Table 2. Pb-free Process – Classification Temperatures (Tc)
Package
Thickness
<1.6 mm
Volume mm3
Volume mm3
350-2000
260 °C
Volume mm3
<350
>2000
260 °C
245 °C
245 °C
260 °C
1.6 mm – 2.5 mm
≥2.5 mm
260 °C
250 °C
250 °C
245 °C
Reliability Test Program
Test item
Method
JESD-22, B102
JESD-22, A108
Description
SOLDERABILITY
HTRB
5 Sec, 245°C
1000 Hrs, 80% of VDS max @ Tjmax
1000 Hrs, 100% of VGS max @ Tjmax
168 Hrs, 100%RH, 2atm, 121°C
500 Cycles, -65°C~150°C
HTGB
JESD-22, A108
JESD-22, A102
JESD-22, A104
PCT
TCT
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Hsinchu, 30078, Taiwan
TEL: 886-3-5635818 Fax: 886-3-5635080
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Copyright Sinopower Semiconductor, Inc.
Rev. A.5 - December, 2016
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