SM4036NHUC-TRG [SINOPWER]

N-Channel Enhancement Mode MOSFET;


型号：	SM4036NHUC-TRG
厂家：	Sinopower Semiconductor Inc
描述：	N-Channel Enhancement Mode MOSFET
文件：	总11页 (文件大小：653K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SM4036NHU

N-Channel Enhancement Mode MOSFET

Features

Pin Description

•

40V/56A

R_DS(ON)=2.4mΩ(max.)@V_GS=10V

R_DS(ON)=3.3mΩ(max.)@V_GS=4.5V

100% UIS + R_gTested

•

Reliable and Rugged

TO-252-2

Lead Free and Green Devices Available

(RoHS Compliant)

•

Moisture Sensitivity Level MSL1

(per JEDEC J-STD-020D)

Applications

•

SMPS Synchronous Rectiﬁcation.

Load Switch.

DC-DC Conversion.

N-Channel MOSFET

Ordering and Marking Information

SM4036NH

Package Code

U : TO-252-2

Operating Junction Temperature Range

C : -55 to 150 ^oC

Handling Code

Assembly Material

Handling Code

TR : Tape & Reel

Assembly Material

Temperature Range

Package Code

G : Halogen and Lead Free Device

SM4036NH U :

SM4036NH

XXXXX

XXXXX - Lot Code

Note : SINOPOWER lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination ﬁnish; which are

fully compliant with RoHS. SINOPOWER lead-free products meet or exceed the leadfree requirements of IPC/JEDEC J-STD-020D for MSL

classiﬁcation at lead-free peak reﬂow temperature. SINOPOWER deﬁnes “Green” to mean lead-free (RoHS compliant) and halogen free (Br or Cl

does not exceed 900ppm by weight in homogeneous material and total of Br and Cl does not exceed 1500ppm by weight).

SINOPOWER reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest

version of relevant information to verify before placing orders.

Rev. A.1 - November, 2018

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SM4036NHU

(T_A=25°C Unless Otherwise Noted)

Absolute Maximum Ratings

Symbol

Parameter

Rating

Unit

Common Ratings

V_DSS

V_GSS

T_J

Drain-Source Voltage

±20

150

-55 to 150

Gate-Source Voltage

Maximum Junction Temperature

Storage Temperature Range

°C

T_STG

I_S

Diode Continuous Forward Current

Continuous Drain Current

Pulsed Drain Current

T_C=25°C

T_C=100°C

T_C=25°C

T_C=100°C

Steady state

T_A=25°C

T_A=70°C

T_C=25°C

T_A=25°C

T_A=70°C

t ≤ 10s

56 ^a

224

104

I_D

I_DM

P_D

R_qJC

I_D

Maximum Power Dissipation

Thermal Resistance-Junction to Case

Continuous Drain Current

Pulsed Drain Current

1.2

°C/W

22.4

I_DM

2.16

1.38

P_D

Maximum Power Dissipation

R_qJA

Thermal Resistance-Junction to Ambient

°C/W

Steady state

L=0.1mH

I_AS

Avalanche Current, Single pulse

Avalanche Energy, Single pulse

E_AS

125

Note a Max. continuous current is limited by bonding wire.

：

Note b Pulse width limited by max. junction temperature.

：

Note c Surface mounted on 1in²pad area, steady state t = 999s.

Note d UIS tested and pulse width limited by maximum junction temperature 150^oC (initial temperature T=25^oC).

：

Rev. A.1 - November, 2018

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SM4036NHU

(T_A= 25°C unless otherwise noted)

Electrical Characteristics

Symbol

Parameter

Test Conditions

Min. Typ. Max. Unit

Static Characteristics

BV_DSSDrain-Source Breakdown Voltage

V =0V, I =250 A

V_DS=32V, V_GS=0V

T_J=85°C

V =V , I =250 A

I_DSSZero Gate Voltage Drain Current

2.5

±100

2.4

V_GS(th)Gate Threshold Voltage

I_GSSGate Leakage Current

1.3

1.7

GS DS

V_GS=±20V, V_DS=0V

V_GS=10V, I_DS=25A

R_DS(ON)Drain-Source On-state Resistance

T_J=125°C

3.2

2.5

V_GS=4.5V, I_DS=15A

V_DS=5V, I_DS=15A

3.3

Gfs

Forward Transconductance

Diode Characteristics

V_SD

t_rr

Diode Forward Voltage

I_SD=25A, V_GS=0V

0.8

1.1

Reverse Recovery Time

Charge Time

t_a

23.8

14.2

I =25A, dl /dt=100A/ s

t_b

Discharge Time

Q_rr

Reverse Recovery Charge

Dynamic Characteristics ^f

R_G

C_iss

C_oss

C_rss

t_d(ON)

t_r

Gate Resistance

V_GS=0V,V_DS=0V,F=1MHz

Input Capacitance

3225 4193

V_GS=0V,

V_DS=20V,

Frequency=1.0MHz

Output Capacitance

Reverse Transfer Capacitance

Turn-on Delay Time

Turn-on Rise Time

755

107

18.3

10.3

57.5

51.3

104

V =20V, R =20 ,

I_DS=1A, V_GEN=10V,

R =6

t_d(OFF)Turn-off Delay Time

t_fTurn-off Fall Time

Gate Charge Characteristics ^f

V_DS=20V, V_GS=10V,

I_DS=25A

Q_g

Total Gate Charge

Q_g

Q_gth

Q_gs

Q_gd

Total Gate Charge

5.3

9.6

6.7

Threshold Gate Charge

Gate-Source Charge

Gate-Drain Charge

V_DS=20V, V_GS=4.5V,

I_DS=25A

：

Note e Pulse test ; pulse width≤300 s, duty cycle≤2%.

：

Note f Guaranteed by design, not subject to production testing.

Rev. A.1 - November, 2018

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SM4036NHU

Typical Operating Characteristics

Power Dissipation

Drain Current

120

100

T_C=25^o

T_C=25^oC,V_G=10V

0 20 40 60 80 100 120 140 160

20 40 60 80 100 120 140 160

T_j- Junction Temperature (°C)

Safe Operation Area

Thermal Transient Impedance

Duty = 0.5

0.2

0.1

0.05

0.1

0.01

1E-3

1E-4

0.02

0.01

Single Pulse

R_qJC:1.2^oC/W

1E-6 1E-5 1E-4 1E-3

0.01

0.1

V_DS- Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Rev. A.1 - November, 2018

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SM4036NHU

Typical Operating Characteristics(Cont.)

Safe Operation Area

Thermal Transient Impedance

Duty = 0.5

0.2

0.1

0.05

0.1

0.01

1E-3

0.02

0.01

Single Pulse

Mounted on 1in²pad

R_qJA:58^oC/W

1E-4 1E-3 0.01 0.1

10 100 1000

V_DS- Drain - Source Voltage (V)

Square Wave Pulse Duration (sec)

Output Characteristics

Drain-Source On Resistance

160

140

3.3

3.0

2.7

2.4

2.1

1.8

1.5

1.2

120

V_GS=3.5,4,4.5,5,6,7,8,9,10V

V_GS=4.5V

V_GS=10V

100

2.5V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

100

V_DS- Drain - Source Voltage (V)

I_D- Drain Current (A)

Rev. A.1 - November, 2018

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SM4036NHU

Typical Operating Characteristics(Cont.)

Gate-Source On Resistance

Gate Threshold Voltage

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

I_DS=25A

_DS=250mA

-50 -25

25 50 75 100 125 150

V_GS- Gate - Source Voltage (V)

T_j- Junction Temperature (°C)

Drain-Source On Resistance

Source-Drain Diode Forward

200

100

2.5

2.0

1.5

1.0

0.5

0.0

V_GS= 10V

I_DS= 25A

T=150^oC

T=25^oC

R_ON@T =25^oC: 2mW

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

-50 -25

25 50 75 100 125 150

T_j- Junction Temperature (°C)

V_SD- Source - Drain Voltage (V)

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SM4036NHU

Typical Operating Characteristics(Cont.)

Capacitance

Gate Charge

4000

Frequency=1MHz

V_DS= 20V

I_DS= 25A

3500

Ciss

3000

2500

2000

1500

1000

500

Coss

Crss

10 15 20 25 30 35 40

V_DS- Drain-Source Voltage (V)

Q_G- Gate Charge (nC)

Transfer Characteristics

150

125

100

T=25^oC

T=125^oC

V_GS- Gate-Source Voltage (V)

Rev. A.1 - November, 2018

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SM4036NHU

Avalanche Test Circuit and Waveforms

DSX(SUS)

DUT

0.01

tAV

Switching Time Test Circuit and Waveforms

90%

DUT

10%

d(on)

d(off)

Rev. A.1 - November, 2018

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SM4036NHU

Disclaimer

Sinopower Semiconductor Inc. (hereinafter “Sinopower”) has been making great efforts to

development high quality and better performance products to satisfy all customers’ needs.

However, a product may fail to meet customer’s expectation or malfunction for various

situations.

All information which is shown in the datasheet is based on Sinopower’s research and

development result, therefore, Sinopower shall reserve the right to adjust the content and

monitor the production.

In order to unify the quality and performance, Sinopower has been following JEDEC while

deﬁnes assembly rule. Notwithstanding all the suppliers basically follow the rule for each

product, different processes may cause slightly different results.

The technical information speciﬁed herein is intended only to show the typical functions of

and examples of application circuits for the products. Sinopower does not grant customers

explicitly or implicitly, any license to use or exercise intellectual property or other rights held

by Sinopower and other parties. Sinopower shall bear no responsible whatsoever for any

dispute arising from the use of such technical information.

The products are not designed or manufactured to be used with any equipment, device

or system which requires an extremely high level of reliability, such as the failure or

malfunction of which any may result in a direct threat to human life or a risk of human

injury. Sinopower shall bear no responsibility in any way for use of any of the products for

the above special purposes. If a product is intended to use for any such special purpose,

such as vehicle, military, or medical controller relevant applications, please contact

Sinopower sales representative before purchasing.

Rev. A.1 - November, 2018

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SM4036NHU

Classiﬁcation Proﬁle

Rev. A.1 - November, 2018

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SM4036NHU

Classiﬁcation Reﬂow Proﬁles

Proﬁle Feature

Sn-Pb Eutectic Assembly

Pb-Free Assembly

150 C

Preheat & Soak

100 C

Temperature min (T

)

smin

150 C

200 C

Temperature max (T

)

smax

60-120 seconds

Time (T_sminto T_smax) (t_s)

Average ramp-up rate

(T_smaxto T_P)

3 C/second max.

Liquidous temperature (T_L)

Time at liquidous (t_L)

183 C

60-150 seconds

217 C

60-150 seconds

Peak package body Temperature (T_p)*

See Classiﬁcation Temp in table 1

See Classiﬁcation Temp in table 2

Time (t )** within 5 C of the speciﬁed

20** seconds

30** seconds

classiﬁcation temperature (T )

Average ramp-down rate (T_pto T

)

6 C/second max.

smax

Time 25 C to peak temperature

6 minutes max.

8 minutes max.

* Tolerance for peak proﬁle Temperature (T_p) is deﬁned as a supplier minimum and a user maximum.

** Tolerance for time at peak proﬁle temperature (t_p) is deﬁned as a supplier minimum and a user maximum.

Table 1. SnPb Eutectic Process – Classiﬁcation Temperatures (Tc)

Package

Thickness

Volume mm³

<350

Volume mm³

≥350

<2.5 mm

235 C

220 C

2.5 mm

≥

220 C

Table 2. Pb-free Process – Classiﬁcation Temperatures (Tc)

Package

Thickness

Volume mm³

<350

Volume mm³

350-2000

Volume mm³

>2000

260 C

<1.6 mm

260 C

1.6 mm – 2.5 mm

260 C

250 C

245 C

2.5 mm

250 C

245 C

≥

Reliability Test Program

Test item

Method

Description

SOLDERABILITY

HTRB

HTGB

PCT

TCT

JESD-22, B102

JESD-22, A108

JESD-22, A102

JESD-22, A104

5 Sec, 245°C

1000 Hrs, 80% of VDS max @ Tjmax

1000 Hrs, 100% of VGS max @ Tjmax

168 Hrs, 100%RH, 2atm, 121°C

500 Cycles, -65°C~150°C

Customer Service

Sinopower Semiconductor Inc.

5F, No. 6, Dusing 1St Rd., Hsinchu Science Park,

Hsinchu, 30078, Taiwan

TEL: 886-3-5635818 Fax: 886-3-5635080

Rev. A.1 - November, 2018

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SM4036NHUC-TRG [SINOPWER]

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