MBR3060PT [SIRECTIFIER]

肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。; 肖特基势垒二极管肖特基势垒二极管,高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管, TJ = -65 ° C〜 175 ° C, TJM = 175 ℃。
MBR3060PT
型号: MBR3060PT
厂家: SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述:

肖特基势垒二极管Schottky Barrier Diodes,高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes,Tj = -65°C ~ 175°C, Tjm = 175°C。
肖特基势垒二极管肖特基势垒二极管,高结温低漏电流肖特基势垒二极管高TJM低IRRM肖特基势垒二极管, TJ = -65 ° C〜 175 ° C, TJM = 175 ℃。

二极管
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MBR3050PT thru MBR3060PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions TO-247AD  
A
C
A
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
A
C
A
C(TAB)  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
A=Anode, C=Cathode, TAB=Cathode  
5.4  
6.2 0.212 0.244  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
VRRM  
V
VRMS  
V
VDC  
V
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
MBR3050PT  
MBR3060PT  
50  
35  
50  
60  
60  
42  
N
1.5 2.49 0.087 0.102  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
Maximum Average Forward Rectified Current @TC=125oC  
30  
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
IFSM  
200  
A
dv/dt  
Voltage Rate Of Change (Rated VR)  
IF=20A @TJ=25oC  
Maximum Forward  
Voltage (Note 1)  
10000  
V/us  
0.75  
0.65  
0.80  
0.75  
IF=20A @TJ=125oC  
IF=30A @TJ=25oC  
IF=30A @TJ=125oC  
VF  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
5
100  
IR  
mA  
@TJ=125oC  
1.4  
oC/W  
pF  
oC  
ROJC  
CJ  
Typical Thermal Resistance (Note 2)  
Typical Junction Capacitance Per Element (Note 3)  
Operating Temperature Range  
500  
-55 to +150  
-55 to +175  
TJ  
TSTG  
Storage Temperature Range  
oC  
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.  
2. Thermal Resistance Junction To Case.  
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: TO-3P molded plastic  
* Polarity: As marked on the body  
* Weight: 0.2 ounces, 5.6 grams  
* Mounting position: Any  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  
MBR3050PT thru MBR3060PT  
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers  

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