SUR60100PT [SIRECTIFIER]
快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。; 快速恢复二极管快恢复二极管，软恢复特性超快恢复外延二极管的软恢复行为超快恢复外延二极管， TJ = -40 ° C〜 125°C ， TJM = 125°C 。
| 型号： | SUR60100PT |
| 厂家： | 
SIRECTIFIER SEMICONDUCTORS |
| 描述： | 快速恢复二极管Fast Recovery Diodes，软恢复特性超快恢复外延二极管Soft Recovery Behaviour Ultra Fast Recovery，Epitaxial Diodes，Tj = -40°C ~ 125°C, Tjm = 125°C。 |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SUR6080PT thru SUR60120PT
Ultra Fast Recovery Epitaxial Diodes
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
Dimensions TO-247AD
A
C
A
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
A
C
A
C(TAB)
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
A=Anode, C=Cathode, TAB=Cathode
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
VRSM
V
VRRM
V
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
SUR6080PT
SUR60100PT
SUR60120PT
800
1000
800
1000
N
1.5 2.49 0.087 0.102
1200
1200
Symbol
Test Conditions
Maximum Ratings
Unit
TVJ=TVJM
70
30
375
IFRMS
IFAVM
IFRM
TC=85oC; rectangular, d=0.5
tp<10us; rep. rating, pulse width limited by TVJM
A
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
200
210
185
195
IFSM
A
TVJ=150oC
TVJ=45oC
t=10ms (50Hz), sine
t=8.3ms (60Hz), sine
t=10ms(50Hz), sine
t=8.3ms(60Hz), sine
200
180
170
160
I2t
A2s
oC
TVJ=150oC
-40...+150
150
-40...+150
TVJ
TVJM
Tstg
Ptot
Md
TC=25oC
138
0.8...1.2
6
W
Nm
g
Mounting torque
Weight
SUR6080PT thru SUR60120PT
Ultra Fast Recovery Epitaxial Diodes
Symbol
Test Conditions
Characteristic Values
Unit
typ.
max.
TVJ=25oC; VR=VRRM
750
250
7
uA
uA
mA
IR
o
.
TVJ=25 C; VR=0.8 VRRM
o
.
TVJ=125 C; VR=0.8 VRRM
IF=30A; TVJ=150oC
2.2
2.55
V
VF
TVJ=25oC
For power-loss calculations only
1.65
18.2
0.9
V
VTO
rT
m
TVJ=TVJM
RthJC
RthCK
RthJA
0.25
K/W
35
60
18
IF=1A; -di/dt=100A/us; VR=30V; TVJ=25oC
_
VR=350V; IF=30A; -diF/dt=240A/us; L<0.05uH; TVJ=100 C
40
16
ns
A
trr
o
IRM
FEATURES
APPLICATIONS
ADVANTAGES
* International standard package
JEDEC TO-247AD
* Antiparallel diode for high frequency
switching devices
* High reliability circuit operation
* Low voltage peaks for reduced
protection circuits
* Planar passivatd chips
* Very short recovery time
* Extremely low switching losses
* Low IRM-values
* Antisaturation diode
* Snubber diode
* Free wheeling diode in converters
and motor control circuits
* Rectifiers in switch mode power
supplies (SMPS)
* Low noise switching
* Low losses
* Operating at lower temperature or
space saving by reduced cooling
* Soft recovery behaviour
* Inductive heating and melting
* Uninterruptible power supplies (UPS)
* Ultrasonic cleaners and welders
SUR6080PT thru SUR60120PT
Ultra Fast Recovery Epitaxial Diodes
70
A
6
µC
5
50
A
TVJ=100°C
VR= 540V
TVJ=100°C
VR= 540V
60
40
max.
typ.
IF=30A
50
40
30
20
10
0
IRM
IF=30A
IF=60A
IF=30A
IF=15A
4
3
2
1
0
IF=60A
IF=30A
IF=15A
IF
Qr
TVJ=25°C
TVJ=100°C
TVJ=150°C
30
20
10
0
max.
typ.
0
1
2
3
4
1
10
100
1000
A/µs
V
0
200
-diF/dt
400 600
A/µs
VF
-diF/dt
Fig. 1 Forward current
versus voltage drop.
Fig. 2 R ecovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
1.0
60
V
1200
ns
TVJ=100°C
µs
VR=540V
50
40
30
20
10
0
1000
0.8
VFR
IF=30A
IF=60A
IF=30A
IF=15A
max.
IRM
800
600
trr
Kf
VFR
0.6
0.4
0.2
0.0
tfr
0.8
0.6
QR
400
200
0.4
0.2
0.0
tfr
typ.
TVJ=125°C
IF=30A
0
A/µs
600
A/µs
0
40
80
120 °C 160
0
200
400
600
0
200
400
TJ
-diF/dt
diF/dt
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 R ecovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
1.0
K/W
0.8
ZthJC
0.6
0.4
0.2
0.0
s
0.001
0.01
0.1
1
10
t
Fig. 7 Transient thermal impedance junction to case.
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