CXG1047FN [SONY]
Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications; 双频3V电源放大器GSM900 / DCS1800的应用
| 型号： | CXG1047FN |
| 厂家： | 
SONY CORPORATION |
| 描述： | Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications |
| 文件： | 总9页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CXG1047FN
Dual-Band 3V Power Amplifier for GSM900/DCS1800 Applications
Description
16 pin HSOF (Plastic)
The CXG1047FN dual band GaAs PA is a 3-stage
power amplifier that may be used for both GSM900
and DCS1800 applications. To achieve minimum
die-size and package dimensions, it contains one
amplifier chain with a single input and output.
The PA has a single RF input for both the GSM900
and DCS1800 transmit signals. The amplifier can be
configured for 2 separate inputs. Power control is
best achieved by variation of VDD1/VDD2 and VDD3
drain voltages with an external transistor. A proposed
power control circuit configuration is described.
External PMOS drain switch should be used to
achieve low leakage.
Features
• Single positive rail only
• Typical output power of 35.5dBm at 900MHz and 33dBm at 1800MHz
• Typical efficiency of 37% at 900MHz and 37% at 1800MHz
• Small package size with integral heat-sink: 16-pin HSOF (5.6 × 4.4 × 0.9mm)
• 3-stage amplifier chain
•Simple pin diode circuitry is used to switch between 1800 and 900MHz matching circuits
• Off mode insertion loss typically 27dB at 900MHz (Pin = +6dBm at VDD = 0V)
• Typical transmit noise @20MHz offset –79dBm/100kHz
Applications
Dual-band handsets transmitting on the GSM900 or DCS1800 frequencies
Structure
GaAs J-FET MMIC
Absolute Maximum Ratings (Ta = 25°C)
• Drain voltage
• Gate voltage
• Input power
• Channel temperature
• Operating temperature
• Storage temperature
VDD1, VDD2, VDD3
VGG1, VGG2, VGG3
Pin, max.
Tch, max.
Ta
8
V
V
dBm
°C
°C
°C
–5 to +1
12
150
–30 to +90
–40 to +150
Tstg
Note on Handling
GaAs MMICs are ESD sensitive devices. Special handling precautions are required. The IC will be damaged
in the range from 60 to 100V@200pF, 0Ω. The actual ESD test data will be submitted later.
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E00223-PS
CXG1047FN
Block Diagram
Dual Band GSM900/18800 PA Configuration
Antenna
VDD1
VDD2
VDD3
Switched output
LPF
(> 2500MHz)
matching network
RFin
RF Out
VGG1
VGG2
VGG3
Duplexer
Rx900/1800/(1900)
CXG1091/1092
Pin Configuration
Bottom GND
9
8
7
6
5
4
3
2
1
Vg1
GND
GND
10
11
12
13
14
15
16
RFin
NC
Vd3/RFout
Vd3/RFout
Vd3/RFout
Vd3/RFout
NC
Vd1
NC
Vg2
Vd2
M900
Vg3
– 2 –
CXG1047FN
Power Amplifier Performance
Measurement Conditions: Ta = 25°C, Pin = +6dBm at 900MHz and Pin = +9dBm at 1750MHz,
pulsed DC conditions: 12.5% duty cycle 577µs burst duration.
All items are specified with the recommended schematic shown on page 6.
Item
Frequency
Condition
Min. Typ. Max. Unit
Symbol
Frequency range (1)
Frequency range (2)
Output Power
GSM900
DCS1800
880
915 MHz
1785 MHz
1710
(1) Output power –
900MHz
POUT
VDD = 3.5V
VDD = 3.5V
34.5 35.5
dBm
(2) Output power –
1750MHz
POUT
POUT
31.5 33
31.5 33
dBm
dBm
VDD = 4V, Pin = +7dBm
Power Control
Power control range
GSM900
1
1
PCTL
38
35
25
35
dB
dB
dB
dB
Power control range
DCS1800
PCTL
Off insertion loss –
900MHz
VDD = 0V
Pin = +7dBm
Ins loss
Ins loss
Off insertion loss –
1750MHz
VDD = 0V
Pin = +7dBm
Efficiency
VDD = 3.5V
Pin = +6dBm
Efficiency at 900MHz
PAE
PAE
32
32
37
37
%
%
VDD = 3.5V
Pin = +9dBm
Efficiency at 1750MHz
VSWR
Input VSWR at
GSM900/DCS1800
2:1 3:1
Harmonics Tx = 900MHz
After matching cct
Po = 35dBm@3.5V
2nd harmonics
–30 –25
–35 –28
–40 –33
dBc
dBc
dBc
After matching cct
Po = 35dBm@3.5V
3rd harmonics
4th harmonics
After matching cct
Po = 35dBm@3.5V
– 3 –
CXG1047FN
Item
Condition
Min. Typ. Max. Unit
Symbol
Harmonics Tx = 1750MHz
Measured after matching cct
Po = 32dBm@3.5V
2nd harmonics
3rd harmonics
–20
–25
–35
dBc
dBc
dBc
–25
–30
–40
After matching cct
Po = 32dBm@3.5V
After matching cct
Po = 32dBm@3.5V
4th harmonics
Stability
No oscillation
present above
–60dBm
Measured with 10:1 load
impedance all angles
Over voltage range 3 to 5V and 0dBm
to +10dBm input power
Load VSWR mismatch at
900MHz and 1800MHz
10:1 Pin = +7dBm
VDD = 3 to 5V
2
VSWR
Transmit Noise
GSM900
935MHz to 960MHz
dBm/
100kHz
POUT = 35dBm
POUT = 32dBm
–79
–79
DCS1800
1805MHz to 1880MHz
dBm/
100kHz
1
Power control is achived by varying VDD1/VDD2 and VDD3.
2
When the output matching network is subjected to a 10:1 VSWR at all phases the amplifier shall suffer no
permanent damage.
– 4 –
CXG1047FN
Dual Band Power Amplifier Schematic
Pulsed DC supply
L1
R1
C1
C15
C16
9
8
RF input
L9
10
11
12
13
14
15
16
7
5mm Slot
in O/P track
R5
6
5
4
3
2
C14
C13
D1
L2
RF output
C3
C19
C4
C12
L3
L4
L8
Band select
1
R4
R2
C17
C5 C6 C7
C20
CXG1047FN
L5
C18
L7
C9
C8
C21
C11
R3
C10
Dual Band Power Amplifier Component Values
C1
C3
C4
C5
C6
C7
C8
C9
C10
C11
C12
C13
C14
C15
C16
C17
C18
C19
C20
C21
47pF
47pF
8.2pF
47pF
1nF
47pF
1.5pF
3.3pF
5.6pF
47pF
2.7/2.7/1.6pF
8.2/1.2pF
47pF
22pF
1nF
L1
L2
L3
L4
L5
L7
L8
L9
68nH
8.2nH
22nH
3.3nH
2.7nH
68nH
68nH
R1
R2
R3
R4
R5
12Ω
12Ω
160Ω
36Ω
8.2Ω
8-turn coilcraft spring type
D1
MA4P275-1146 MA/COM
47pF
1nF
1nF
2.7pF
8pF
– 5 –
CXG1047FN
Recommended ALC Schematic
Vbat
Siliconix IRF9424
RF Out
RF In
PA
Vcc
Vcc
Voffset
From PA
Ramp DAC
Measurement Circuit – Pulsed DC Supply
DC supply
TTL inverter
P-Channel
FET
S
D
G
3.6V
Si9424DY
Anritsu GSM
Gate
measurement set
O/P
PA-Drain
Connections
VDD1/VDD2/VDD3
577µs pulse
12.5% duty cycle
– 6 –
CXG1047FN
Example of Representative Characteristics
Output power
Output power
(@VDD = 3V, Pin = 6dBm)
38
(@VDD = 3.5V, Pin = 6dBm)
38
37
36
35
34
33
32
31
30
37
36
35
34
33
32
31
30
840
860
880
900
920
940
840
860
880
900
920
940
Frequency [MHz]
Frequency [MHz]
Output power
POUT and PAE vs. Pin
(@VDD = 4V, Pin = 6dBm)
(@VDD = 3.5V, 900MHz)
38
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
POUT [dBm]
37
36
35
34
33
32
31
30
PAE [%]
0
0
840
860
880
900
920
940
–6 –4 –2
0
2
4
6
8
10 12
Frequency [MHz]
Pin [dBm]
– 7 –
CXG1047FN
Output power
Output power
(@VDD = 3V, Pin = 8dBm)
(@VDD = 3.5V, Pin = 8dBm)
34
33
32
31
30
36
35
34
33
32
31
30
1700
1720
1740
1760
1780
1800
1700
1720
1740
1760
1780
1800
Frequency [MHz]
Frequency [MHz]
Output power
POUT and PAE vs. Pin
(@VDD = 4V, Pin = 8dBm)
(@VDD = 3.5V, 1750MHz)
36
35
34
33
32
31
30
40
35
30
25
20
15
10
5
50
45
40
35
30
25
20
15
10
5
POUT [dBm]
PAE [%]
0
0
1700
1720
1740
1760
1780
1800
–6 –4 –2
0
2
4
6
8
10 12
Frequency [MHz]
Pin [dBm]
– 8 –
CXG1047FN
Package Outline
Unit: mm
HSOF 16PIN(PLASTIC)
0.9 ± 0.1
0.05
S
5.6 ± 0.1
(5.5)
(3.1)
A
16
9
1
8
(0.2)
0.65
(0.2)
(4.4)
S
M S
A
0.05
Solder Plating
+ 0.1
0.32 – 0.03
B
+ 0.1
0.26 – 0.03
DETAILB
NOTE: Dimension “ ” does not include mold protrusion.
PACKAGE STRUCTURE
EPOXY RESIN
PACKAGE MATERIAL
LEAD TREATMENT
LEAD MATERIAL
SOLDER PLATING
COPPER ALLOY
0.06g
HSOF-16P-02
SONY CODE
EIAJ CODE
JEDEC CODE
PACKAGE MASS
– 9 –
Sony Corporation
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