SLD322V-3 [SONY]
High Power Density 0.5W Laser Diode; 高功率密度0.5W激光二极管型号: | SLD322V-3 |
厂家: | SONY CORPORATION |
描述: | High Power Density 0.5W Laser Diode |
文件: | 总7页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SLD322V
High Power Density 0.5W Laser Diode
Description
1
The SLD322V is a high power, gain-guided laser diode produced by MOCVD method . Compared to the
SLD300 Series, this laser diode has a high brightness output with a doubled optical density which can be
2
achieved by QW-SCH structure .
1
MOCVD: Metal Organic Chemical Vapor Deposition
2
QW-SCH: Quantum Well Separate Confinement Heterostructure
Features
• High power
Recommended optical power output: Po = 0.5W
• Low operating current: Iop = 0.75A (Po = 0.5W)
Applications
• Solid state laser excitation
• Medical use
• Material processes
• Measurement
Structure
GaAlAs quantum well structure laser diode
Absolute Maximum Ratings (Tc = 25°C)
• Optical power output
• Reverse voltage
Po
0.55
2
W
V
VR LD
PD
15
V
• Operating temperature (Tc) Topr
–10 to +30
–40 to +85
°C
°C
• Storage temperature
Tstg
Pin Configuration
2
1
3
1. LD cathode
2. PD anode
3. COMMON
Bottom View
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
– 1 –
E93205A81-PS
SLD322V
Electrical and Optical Characteristics
Item
(Tc: Case temperature, Tc = 25°C)
Min.
Conditions
Typ.
0.18
0.75
2.1
Max.
0.3
Unit
A
Symbol
Ith
Threshold current
Operating current
Iop
Vop
λp
PO = 0.5W
PO = 0.5W
PO = 0.5W
A
1.2
V
Operating voltage
3.0
1
nm
Wavelength
790
840
PO = 0.5W
VR = 10V
Monitor current
Imon
0.15
mA
0.8
3.0
Perpendicular
θ
degree
degree
µm
20
4
30
9
40
17
Radiation angle
(F. W. H. M. )
PO = 0.5W
Parallel
Position
Angle
θ//
∆X, ∆Y
∆φ
±50
±3
Positional accuracy
Differential efficiency
PO = 0.5W
PO = 0.5W
degree
W/A
ηD
0.5
0.9
F. W. H. M. : Full Width at Half Maximum
1 Wavelength Selection Classification
Type
Wavelength (nm)
795 ± 5
SLD322V-1
SLD322V-2
SLD322V-3
810 ± 10
830 ± 10
Type
Wavelength (nm)
798 ± 3
SLD322V-21
SLD322V-24
SLD322V-25
807 ± 3
810 ± 3
Handling Precautions
Eye protection against laser beams
Safety goggles for
protection from
laser beam
Lens
The optical output of laser diodes ranges from
several mW to 3W. However the optical power
density of the laser beam at the diode chip
reaches 1MW/cm2. Unlike gas lasers, since
laser diode beams are divergent, uncollimated
laser diode beams are fairly safe at a laser
diode. For observing laser beams, ALWAYS use
safety goggles that block infrared rays. Usage of
IR scopes, IR cameras and fluorescent plates is
also recommended for monitoring laser beams
safely.
Laser diode
Optical
material
IR fluorescent plate
C
T
A
C
P
A
Optical boad
Optical power output control device
temperature control device
– 2 –
SLD322V
Example of Representative Characteristics
Optical power output vs. Forward current characteristics
Optical power output vs. Monitor current characteristics
1000
TC = 25°C
TC = 0°C
TC = –10°C
500
250
0
800
TC = 30°C
TC = 0°C
TC = –10°C
TC = 25°C
TC = 30°C
600
400
200
0
200
400
600
800
1000
0
0.5
Imon – Monitor current [mA]
1.0
IF – Forward current [mA]
Power dependence of far field pattern (Parallel to junction)
Threshold current vs. Temperature characteristics
1000
TC = 25°C
500
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
100
–10
0
10
20
30
–90
–60
–30
0
30
60
90
Tc – Case temperature [°C]
Angle [degree]
Power dependence of far field pattern
(Perpendicular to junction)
Temperature dependence of far field pattern
(Parallel to junction)
TC = 25°C
PO = 500mW
PO = 500mW
PO = 400mW
PO = 300mW
PO = 200mW
PO = 100mW
TC = 25°C
TC = 10°C
TC = –5°C
–90
–60
–30
0
30
60
90
–90
–60
–30
0
30
60
90
Angle [degree]
Angle [degree]
– 3 –
SLD322V
Temperature dependence of far field pattern
(Perpendicular to junction)
Dependence of wavelength
820
810
800
790
Po = 500mW
PO = 500mW
TC = 25°C
TC = 10°C
TC = –5°C
–90
–60
–30
0
30
60
90
–10
0
10
20
30
Angle [degree]
Tc – Case temperature [°C]
Differential efficiency vs. Temperature characteristics
1.0
0.5
0
–10
0
10
20
30
Tc – Case temperature [°C]
– 4 –
SLD322V
Power dependence of spectrum
1.0
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Po = 0.2W
Tc = 25°C
Po = 0.3W
0.8
0.6
0.4
0.2
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Po = 0.4W
Tc = 25°C
Po = 0.5W
796
798
800
802
804
796
798
800
802
804
Wavelength [nm]
Wavelength [nm]
– 5 –
SLD322V
Temperature dependence of spectrum (Po = 0.5W)
1.0
1.0
0.8
0.6
0.4
0.2
Tc = –10°C
Tc = 0°C
0.8
0.6
0.4
0.2
785
790
795
800
805
810
815
785
790
795
800
805
810
815
Wavelength [nm]
Wavelength [nm]
1.0
1.0
0.8
0.6
0.4
0.2
Tc = 25°C
Tc = 30°C
0.8
0.6
0.4
0.2
785
790
795
800
805
810
815
785
790
795
800
805
810
815
Wavelength [nm]
Wavelength [nm]
– 6 –
SLD322V
Package Outline
Unit: mm
M-248 (LO-11)
Reference
Slot
1.0
3
2
1
Photo
Diode
0
φ9.0 – 0.015
φ7.7 MAX
φ6.9 MAX
φ3.5
Window
Glass
Reference
Plane
LD Chip
3 – φ0.45
Optical
Distance = 2.55 ± 0.05
PCD φ2.54
PACKAGE WEIGHT
1.2g
SONY CODE
M-248
EIAJ CODE
JEDEC CODE
– 7 –
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