SSM9985GM [SSC]
N-CHANNEL ENHANCEMENT MODE POWER MOSFET; N沟道增强型功率MOSFET
| 型号： | SSM9985GM |
| 厂家： | 
SILICON STANDARD CORP. |
| 描述： | N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
| 文件： | 总6页 (文件大小：162K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSM9985GM
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
PRODUCT SUMMARY
Low On-Resistance
BVDSS
RDS(ON)
ID
40V
15mΩ
10A
D
Fast Switching Speed
Surface Mount Package
D
D
D
G
S
S
SO-8
S
DESCRIPTION
The advanced power MOSFETs from Silicon Standard Corp.
provide the designer with the best combination of fast
switching, ruggedized device design, ultra low on-resistance
and cost-effectiveness.
D
S
G
Pb-free; RoHS-compliant
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Drain-Source Voltage
Rating
Units
VDS
VGS
40
± 20
V
V
Gate-Source Voltage
ID@TA=25℃
ID@TA=70℃
IDM
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
10
A
8
A
48
A
PD@TA=25℃
Total Power Dissipation
2.5
W
W/℃
℃
℃
Linear Derating Factor
0.02
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
-55 to 150
-55 to 150
THERMAL DATA
Symbol
Parameter
Thermal Resistance Junction-ambient3
Value
50
Unit
Rthj-amb
Max.
℃/W
10/31/2007 Rev.1.00
www.SiliconStandard.com
1
SSM9985GM
ELECTRICAL CHARACTERISTICS
(TJ=25oC unless otherwise specified)
Symbol
BVDSS
Parameter
Test Conditions
VGS=0V, ID=250uA
Min. Typ. Max. Units
Drain-Source Breakdown Voltage
40
-
-
0.032
-
-
-
V
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=10A
VGS=4.5V, ID=5A
V/℃
mΩ
RDS(ON)
-
15
-
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
25
mΩ
V
VGS(th)
gfs
Gate Threshold Voltage
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
VDS=VGS, ID=250uA
VDS=10V, ID=10A
VDS=40V, VGS=0V
VDS=32V ,VGS=0V
VGS= ± 20V
ID=10A
3
35
-
S
IDSS
uA
uA
nA
nC
nC
nC
ns
ns
ns
ns
pF
pF
pF
-
1
-
25
IGSS
Qg
-
±100
14.7
7.1
6.8
11.5
6.3
28.2
12.6
1725
235
145
-
-
-
-
-
-
-
-
-
-
Qgs
Qgd
td(on)
tr
Gate-Source Charge
VDS=20V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=4.5V
VDS=20V
Rise Time
ID=1A
td(off)
tf
Turn-off Delay Time
RG=3.3Ω,VGS=10V
RD=20Ω
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS=0V
VDS=25V
f=1.0MHz
SOURCE-DRAIN DIODE
Symbol
Parameter
Test Conditions
VD=VG=0V , VS=1.3V
Min. Typ. Max. Units
A
V
IS
Continuous Source Current ( Body Diode )
-
-
-
-
1.92
1.3
VSD
Forward On Voltage2
Tj=25℃, IS=2.3A, VGS=0V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 ℃/W when mounted on Min. copper pad.
10/31/2007 Rev.1.00
www.SiliconStandard.com
2
SSM9985GM
50
40
30
20
10
0
45
30
15
0
10V
6.0V
5.0V
4.5V
10V
6.0V
5.0V
T C =150 o C
T C =25 o C
4.5V
V GS =4.0V
V GS =4.0V
0
1
2
3
4
0
1
2
3
4
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2
1.4
0.8
0.2
80
60
40
20
0
I D =10A
I D =10A
T C =25 ℃
V GS =10V
Ω
Ω
Ω
Ω
2
4
6
8
10
12
-50
0
50
100
150
T j , Junction Temperature ( o C)
V GS (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
10/31/2007 Rev.1.00
www.SiliconStandard.com
3
SSM9985GM
12
10
8
3
2
1
0
6
4
2
0
25
50
75
100
125
150
0
50
100
150
T c , Case Temperature ( o C)
T c , Case Temperature ( o C)
Fig 5. Maximum Drain Current v.s.
Case Temperature
Fig 6. Typical Power Dissipation
1
100
Duty Factor = 0.5
100us
1ms
0.2
0.1
10
0.1
0.05
1
10ms
100ms
1s
0.02
0.01
PDM
t
0.01
T
Single Pulse
0.1
Duty Factor = t/T
Peak Tj = PDM x Rthja + Ta
Rthja=125oC/W
10s
T C =25 o C
Single Pulse
DC
0.01
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
0.1
1
10
100
V DS (V)
t , Pulse Width (s)
Fig 7. Maximum Safe Operating Area
Fig 8. Effective Transient Thermal Impedance
10/31/2007 Rev.1.00
www.SiliconStandard.com
4
SSM9985GM
f=1.0MHz
12
10000
1000
100
I D =10A
Ciss
9
V
DS =12V
DS =16V
V
V
DS =20V
6
Coss
Crss
3
0
10
0
5
10
15
20
25
1
7
13
19
25
31
VDS (V)
Q G , Total Gate Charge (nC)
Fig 9. Gate Charge Characteristics
Fig 10. Typical Capacitance Characteristics
3.5
100
3
10
2.5
Tj=150 o C
Tj=25 o C
2
1
1.5
0.1
1
0.5
0.01
-50
0
50
100
150
0
0.4
0.8
1.2
T j , Junction Temperature ( o C )
V SD (V)
Fig 11. Forward Characteristic of
Reverse Diode
Fig 12. Gate Threshold Voltage v.s.
Junction Temperature
10/31/2007 Rev.1.00
www.SiliconStandard.com
5
SSM9985GM
VDS
RD
90%
VDS
TO THE
OSCILLOSCOPE
D
S
0.5 x RATED VDS
RG
G
10%
VGS
+
-
10 v
VGS
td(off)
td(on) tr
tf
Fig 13. Switching Time Circuit
Fig 14. Switching Time Waveform
VG
VDS
QG
TO THE
OSCILLOSCOPE
D
S
4.5V
0.5 x RATED VDS
QGD
QGS
G
VGS
+
1~ 3 mA
IG
-
I
D
Q
Charge
Fig 15. Gate Charge Circuit
Fig 16. Gate Charge Waveform
Information furnished by Silicon Standard Corporation is believed to be accurate and reliable. However, Silicon Standard Corporation makes no
guarantee or warranty, expressed or implied, as to the reliability, accuracy, timeliness or completeness of such information and assumes no
responsibility for its use, or for infringement of any patent or other intellectual property rights of third parties that may result from its
use. Silicon Standard reserves the right to make changes as it deems necessary to any products described herein for any reason, including
without limitation enhancement in reliability, functionality or design. No license is granted, whether expressly or by implication, in relation to
the use of any products described herein or to the use of any information provided herein, under any patent or other intellectual property rights of
Silicon Standard Corporation or any third parties.
10/31/2007 Rev.1.00
www.SiliconStandard.com
6
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