FT0013C_15 [SSDI]
Avalanche Rated P-MOSFET;
| 型号： | FT0013C_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Avalanche Rated P-MOSFET |
| 文件： | 总2页 (文件大小：135K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFR9130J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
RADIATION TOLERANT
20 AMP, 100 Volts, 90 mΩ
Avalanche Rated P-MOSFET
SFR9130 __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged Trench Technology
Low ON-resistance: 60mΩ typ
Lead Options
__ = Straight Leads
DB = Down Bend
UB = Up Bend
Radiation tolerant: less than 0.5V typical gate
threshold shift @ TID= 100kRAD
SEU and SEGR resistant to LET 38
Avalanche rated
Hermetically Sealed Power Packaging
Low Total Gate Charge, Fast Switching
Replacement for IRF9130 types
TX, TXV, S-Level screening available
Package 3/
J = TO-257
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain – Source Voltage
-100
Gate – Source Voltage, continuous
Gate – Source Voltage, transient
±15
±25
VGS
V
A
@ TC = 25ºC
@ TC = 100ºC
Max. Continuous Drain Current
(package limited)
ID1
ID2
20
15
Max. Avalanche Current
@ L= 5.0mH
@ Tj= 150ºC
@ L= 5.0mH
@ TC = 25ºC
IAR
IDM
26
26
A
A
Max. Continuous Drain Current (Tj limited)
Single Pulse Avalanche Energy
Total Power Dissipation
EAS
300
mJ
W
75
PD
Operating & Storage Temperature
-55 to +150
ºC
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.65
ºC/W
R0JC
NOTES:
TO-257 (J)
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
3/ Unless otherwise specified, all electrical characteristics @25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC
SFR9130J
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 3/
Symbol
BVDSS
Min
Typ Max Units
Drain to Source Breakdown Voltage
VGS = 0V, ID =0.25 mA
-100 - 115
-
V
Drain to Source On State Resistance
V
V
GS = 10V, ID = 13A, Tj= 25oC
-
-
60
100
90
-
RDS(on)
VGS(th)
IGSS
mΩ
GS = 10V, ID = 13A, Tj= 125oC
VDS = 5 V, ID = 250A, Tj= 25oC
VDS = 5 V, ID = 250A, Tj= 125oC
VDS = 5 V, ID = 250A, Tj= -55oC
-2.0
-1.0
-
-3.2
-2.5
-3.6
-4.0
-
-5.0
Gate Threshold Voltage
Gate to Source Leakage
V
VGS = ±15V, Tj= 25oC
-
-
1
10
±50
±200
nA
VGS = ±15V, Tj= 125oC
VDS = -100V, VGS = 0V, Tj = 25oC
V
-
-
0.01
5
10
250
A
A
Zero Gate Voltage Drain Current
Forward Transconductance
IDSS
gfs
DS = -100V, VGS = 0V, Tj = 125oC
V
DS = 10V, ID = 10A, Tj = 25oC
-
15
-
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
V
V
GS = 10V
DS = 80V
ID = 10A
Qg
Qgs
Qgd
-
-
-
23
8.5
5
40
-
-
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
Fall Time
VGS = 10V
td(on)
tr
td(off)
tf
-
-
-
-
65
25
75
30
100
50
150
50
VDS = 50V
nsec
V
ID = 10A
RG = 10
Diode Forward Voltage
IF = 10A, VGS = 0V
VSD
-
0.85
1.5
Diode Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
trr
Qrr
-
-
55
135
85
-
nsec
nC
IF = 10A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
V
GS = 0V
DS = 25V
f = 1 MHz
Ciss
Coss
Crss
-
-
-
3500 4000
300
110
400
200
pF
PACKAGE OUTLINE:
TO-257 (J)
PINOUT:
PIN 1: DRAIN
PIN 2: SOURCE
PIN 3: GATE
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0013C
DOC
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