FT0015 [SSDI]
N-Channel MOSFET Transistor;
| 型号： | FT0015 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：35K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFF110S.22
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3.5 A /100 Volts / 0.6 W
DESIGNER’S DATA SHEET
N-Channel MOSFET Transistor
Features:
· Rugged Construction with Polysilcon Gate
· Small Footprint Hermetic Surface Mount Device with
Excellent Thermal Properties
· Replacement/Enhancement for 2N6782
· TX, TXV, S-Level Screening Available
· Very Fast Switching Characteristics
SMD.22
Maximum Ratings
Symbol
Value
Units
100
100
Drain – Source Voltage
Drain – Gate Voltage
Gate – Source Voltage
VDS
VDG
VGS
Volts
Volts
Volts
+/-20
3.5
2.25
@ TC = 25ºC
@ TC = 100ºC
ID1
ID2
Continuous Drain Current
Amps
Note 1
Note 2
16.5
0.8
Power Dissipation @ TC = 25ºC
Power Dissipation @ TA = 25ºC
PD
W
ºC
-55 to +150
Operating & Storage Temperature
Top & Tstg
Maximum Thermal Resistance
Junction to Case and to Ambient
RqJC
RqJA
7.5 (typ 5)
156.5
ºC/W
Note1: Derated 60.6 mW/°C above TC= 25°C
Note2: Derated 6.4 mW/°C above TA= 25°C
PIN 1= COLLECTOR; PIN 2= EMITTER; PIN 3= BASE
.220±.007
.065±.010
3
2
.150
±.007
.134 .030
.052
.140
1
.070
.090
.005 TYP
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DOC
DATA SHEET #: FT0015A
Solid State Devices, Inc.
SFF110S.22
14830 Valley View Blvd * La Mirada, CA 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 4/
Symbol
Min
Typ
Max Units
Drain – Source Breakdown
Voltage
VGS = 0 V; ID = 1 mA
100
––
––
BVDSS
Volts
Volts
VDS = 4 V; ID = 0.25 mA
VDS =4V; ID= 0.25mA; TA = 125ºC
VDS =5V; ID= 0.25mA; TA = -55ºC
2.0
––
––
3.0
2.0
4.0
4.0
––
––
VGS(th)1
VGS(th)2
VGS(th)3
Gate – Source Threshold
Voltage
VGS = +/- 20 V
VGS = +/- 20 V, TA= 125ºC
––
––
5
10
100
––
IGSS1
IGSS2
nA
Gate Leakage Current
Drain Leakage Current
VGS = 0 V; VDS = 80 V
VGS = 0V; VDS = 80 V, TA = 125ºC
––
––
0.02
5
25
––
IDSS1
IDSS2
mA
Static Drain – Source
On-State Resistance
VGS = 10 V, ID = 2.25 A
VGS = 10 V, ID = 3.50 A
––
––
0.55
0.58
0.60
0.61
RDS(on)1
RDS(on)2
Ohm
VGS= 10V, ID = 2.25A, TA = 125ºC
ID = 3.5 A
––
––
1.05
1.2
––
RDS(on)3
VSD
Forward Voltage of the
Source – Drain Diode
1.5
Volts
ns
Switching Time Test:
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
––
––
––
––
––
––
––
––
15
25
25
20
td(on)
tr
td(off)
tf
ID = 3.5 A, VGS = 10 V,
RG = 7.5 ohm, VDD = 50 V
Gate Charge Test:
––
––
––
––
––
––
6.55
1.61
3.46
On-State Gate Charge
Gate – Source Charge
Gate – Drain Charge
Qg(on)
Qgs
Qgd
VGS= 10 V, VDS= 50 V
nC
ns
VDD= 50V, ID = 3.5 A,
Reverse Recovery Time
––
––
180
trr
dI/dt= 100 A/ms
Capacitance Test:
––
––
––
180
85
15
––
––
––
Input Capacitance
Output Capacitance
Reverse Transfer Cap.
Ciss
Coss
Crss
VGS= 0 V, VDS= 25 V, f = 1MHz
pF
NOTES:
2/ Screening per MIL-PRF-19500
* Pulse Test: Pulse Width = 300 msec, Duty Cycle = 2%
1/ For Ordering Information, Price, Availability Contact
Factory.
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DOC
DATA SHEET #: FT0015A
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