RU0005H [SSDI]
ULTRA FAST RECTIFIER;
| 型号： | RU0005H |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | ULTRA FAST RECTIFIER |
| 文件： | 总2页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SDR1D thru SDR1N
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1.0 AMPS
200 ─ 1200 VOLTS
50 – 80 nsec ULTRA FAST RECTIFIER
Designer’s Data Sheet
Part Number/Ordering Information 1/
__ __ __
SDR1
FEATURES:
Ultra Fast Recovery:
•
50-80 ns Max @ 25ºC 4/
2/
80-130 ns Max @ 100ºC4/
└
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
Screening
__ = Not Screened
TX = TX Level
TXV = TXV
•
•
•
•
•
•
•
•
Single Chip Construction
PIV to 1200 Volts
Low Reverse Leakage Current
S = S Level
Hermetically Sealed
For High Efficiency Applications
Metallurgically Bonded
Package Type
__ = Axial Leaded
TX, TXV, and S-Level Screening Available2/
Available in Surface Mount (SM) and Square Tab
Surface Mount (SMS) Versions (Ref. RU0003)
D = 200V
G = 400V
J = 600V
K = 800V
M = 1000V
N = 1200V
Family
•
Hyper Fast Version available (Ref. RH0119)
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
SDR1D
SDR1G
SDR1J
SDR1K
SDR1M
SDR1N
200
400
600
800
1000
1200
Peak Repetitive Reverse
Voltage
VRRM
VRWM
VR
Volts
And
DC Blocking Voltage
Rectified Forward Forward Current
(Resistive Load, 60 Hz, Sine Wave, TA = 25ºC)
1
Amp
IO
Peak Surge Current
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TA = 25ºC)
25
Amps
IFSM
-65 to +175
45
Operating & Storage Temperature
ºC
T
OP and TSTG
RθJL
Thermal Resistance, Junction to Lead, L = 3/8”
ºC/W
Axial Leaded
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
4/ Recovery Conditions: IF = 0.5 Amp, IR = 1.0 Amp, IRR to .25 Amp.
5/ For information on operating curves, contact factory.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0005H
DOC
SDR1D
thru
SDR1N
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL VALUE UNIT
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300- 500 μs Pulse, TA = 25ºC)
SDR1D thru SDR1J
SDR1K thru SDR1N
1.70
1.90
VF1
VF2
IR1
IR2
CJ
Vdc
Vdc
μA
μA
pf
Instantaneous Forward Voltage Drop
(IF = 1Adc, 300- 500 μs Pulse, TA = -55ºC)
SDR1D thru SDR1J
SDR1K thru SDR1N
2.10
2.30
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 25ºC)
5
Maximum Reverse Leakage Current
(Rated VR, 300 μs Pulse Minimum , TA = 100ºC)
500
24
Junction Capacitance
(VR = 10Vdc, TA = 25ºC , f = 1MHz)
SDR1D thru SDR1J
SDR1K
50
60
70
80
Maximum Reverse Recovery Time 4/
trr
ns
SDR1M
SDR1N
DIMENSIONS
Axial Leaded Case Outline 5/:
DIM.
A
B
MIN.
MAX.
---
---
.150”
.190”
.033”
---
C
D
.027”
.95”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RU0005H
DOC
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