SFF116N10ZTXV [SSDI]
暂无描述;型号: | SFF116N10ZTXV |
厂家: | SOLID STATES DEVICES, INC |
描述: | 暂无描述 |
文件: | 总2页 (文件大小:114K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SFF116N10M
SFF116N10Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
DESIGNER’S DATA SHEET
116 AMP , 100 Volts, 15 mΩ
Avalanche Rated N-channel
MOSFET
Part Number / Ordering Information 1/
SFF116N10 ___ ___ ____
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
Features:
Rugged poly-Si gate
Lead Option 3/
__ = Straight Leads
DB = Down Bend
UB = Up Bend
•
•
•
•
•
•
•
•
Lowest ON-resistance in the industry
Avalanche rated
Hermetically Sealed, Isolated Package
Low Total Gate Charge
Fast Switching
TX, TXV, S-Level screening available
Improved (RDS(ON) QG) figure of merit
Package 3/ 4/
M = TO-254
Z = TO-254Z
Maximum Ratings
Symbol
VDSS
Value
Units
V
Drain - Source Voltage
Gate – Source Voltage
100
±20
±30
continuous
transient
VGS
ID1
V
A
Max. Continuous Drain Current (package
limited)
55
@ TC = 25ºC
@ TC = 25ºC
@ TC = 175ºC
ID2
ID3
116
80
Max. Instantaneous Drain Current (Tj limited)
Max. Avalanche current
A
A
IAR
@ L= 0.1 mH
@ L= 0.1 mH
@ TC = 25ºC
60
EAS
EAR
2500
80
Single and Repetitive Avalanche Energy
mJ
Total Power Dissipation
W
PD
150
Operating & Storage Temperature
ºC
-55 to +175
TOP & TSTG
Maximum Thermal Resistance
(Junction to Case)
1.0
(typ.0.75)
RθJC
ºC /W
NOTES:
TO-254
TO-254Z
*Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%.
1/ For ordering information, price, and availability - contact
factory.
2/ Screening based on MIL-PRF-19500. Screening flows
available on request.
3/ For package outlines / lead bending options / pinout
configurations - contact factory.
4/ Maximum current limited by package configuration
5/ Unless otherwise specified, all electrical characteristics
@25oC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0037B
DOC
SFF116N10M
SFF116N10Z
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics 5/
Symbol Min
Typ Max Units
Drain to Source Breakdown Voltage
BVDSS
V
GS = 0V, ID = 250μA
100
110
––
V
VGS = 10V, ID = 50A, Tj= 25oC
VGS = 10V, ID = 50A, Tj=125oC
VGS = 10V, ID = 50A, Tj= 150oC
––
––
––
10
16
20
15
25
––
Drain to Source On State Resistance
Gate Threshold Voltage
RDS(on)
mΩ
V
DS = VGS, ID = 1.0mA, Tj= 25oC
3.0
2.0
––
4.5
3.5
5.0
5.0
––
6
VDS = VGS, ID = 1.0mA, Tj= 125oC
V
VGS(th)
V
DS = VGS, ID = 1.0mA, Tj= -55oC
VGS = ±20V, Tj= 25oC
––
––
10
30
±100
––
Gate to Source Leakage
IGSS
nA
VGS = ±20V, Tj= 125oC
VDS = 100V, VGS = 0V, Tj = 25oC
VDS = 100V, VGS = 0V, Tj = 125oC
––
––
––
0.01
2.5
25
25
250
––
μA
μA
μA
Zero Gate Voltage Drain Current
Forward Transconductance
IDSS
gfs
V
DS = 100V, VGS = 0V, Tj = 175oC
V
DS = 15V, ID = 35A, Tj = 25oC
10
60
––
Mho
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Qg
Qgs
Qgd
V
GS = 12V
––
––
––
125
35
65
250
75
120
VDS = 35V
ID = 50A
nC
Turn on Delay Time
Rise Time
Turn off Delay Time
td(on)
tr
td(off)
tf
V
GS = 11V
––
––
––
––
39
67
80
67
50
80
100
VDS = 50V
ID = 35A
nsec
V
Fall Time
RG = 2.35Ω, pw= 3us
80
Diode Forward Voltage
VSD
IF = 35A, VGS = 0V
––
0.82
1.2
Diode Reverse Recovery Time
Reverse Recovery Charge
trr
Qrr
––
––
240
0.85
300
––
nsec
μC
IF = 50A, di/dt = 100A/usec
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0V
VDS = 25V
f = 1 MHz
––
––
––
4800
2050
600
––
––
––
pF
PIN ASSIGNMENT (Standard)
Available Part Numbers:
Package
TO-254 (M)
TO-254Z (Z)
Drain
Pin 1
Pin 1
Source
Pin 2
Pin 2
Gate
Pin 3
Pin 3
Consult Factory
TO254 (M)
TO254Z (Z)
PIN 3
PIN 2
PIN 1
PIN 3
PIN 2
PIN 1
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: FT0037B
DOC
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