SFT5004JDBTXV [SSDI]
Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, TO-257, 3 PIN;
| 型号： | SFT5004JDBTXV |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor, 10A I(C), 120V V(BR)CEO, 1-Element, NPN, Silicon, TO-257AA, TO-257, 3 PIN 晶体 晶体管 |
| 文件： | 总2页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT5002/SFT5004
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
10 AMP
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
NPN HIGH SPEED
POWER TRANSISTOR
150 VOLTS
SFT5002
SFT5004
__ __ __
Screening 2/ __ = Not Screened
TX = TX Level
│
│
│
│
│
│
│
│
│
│
│
│
│
└
└
Features:
BVCEO 120V min.
Fast Switching
High Frequency
High Linear Gain, Low Saturation Voltage
Radiation Tolerant
200°C Operating Temperature
High Current, High Voltage Version of
2N5002 and 2N5004
TXV = TXV Level
•
•
•
•
•
•
•
S = S Level
Lead Bend 3/ __ = Straight Leads
UB = Up Bend
DB = Down Bend
Package 3/ /59 = TO-59
└
M = TO-254
J = TO-257
•
TX, TXV, S-Level Screening Available -
Consult Factory.
Maximum Ratings
Symbol
Value
Units
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
VCBO
VCEO
VEBO
IC
Volts
Volts
Volts
Amps
Amps
150
120
6.0
10
IB
2
Total Device Dissipation @ TC = 25ºC
Derate Above 25ºC
Watts
W/ºC
50
0.33
PD
TJ & TSTG
R0JC
Operating & Storage Temperature
ºC
-65 to +200
Maximum Thermal Resistance
(Junction to Case)
ºC/W
3.0
Available Part Numbers:
TO-59 (/59)
TO-254 (M)
TO-257 (J)
SFT5002/59
SFT5004/59
SFT5002J
SFT5002JUB
SFT5002JDB
SFT5004J
SFT5002MDB
SFT5004M
SFT5004MUB
SFT5004MDB
SFT5004JUB
SFT5004JDB
SFT5002M
SFT5002MUB
PIN ASSIGNMENT
CODE
FUNCTION
PIN 1
PIN 2
PIN 3
-
Normal
Collector
Emitter
Base
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0020D
DOC
SFT5002/SFT5004
Series
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristics4/
Symbol
BVCEO
Min
Max
Units
Volts
Collector – Emitter Blocking Voltage
(IC = 100mA)
(IC = 200µA)
(IE = 200µA)
120
––
Collector – Base Sustaining Voltage
Emitter – Base Sustaining Voltage
BVCBO
BVEBO
Volts
Volts
150
6
––
––
ICEO
ICEV
(VCE = 40V)
(VCB = 60V, VBE = 2V, TC = 150°C)
––
––
50
500
Collector Cutoff Current
Collector Cutoff Current
μA
μA
(VCE = 60V)
(VCE = 100V)
––
––
1.0
1.0
ICES
IEBO
μA
mA
(VEB = 5V)
(VEB = 6V)
––
––
1.0
1.0
Emitter Cutoff Current
DC Current Gain *
SFT5002 - (IC = 50mA, VCE = 5V)
(IC = 2.5A, VCE = 5V)
20
30
20
15
50
70
40
22
(IC = 5.0 A, VCE = 5V)
150
200
SFT5004 - (IC = 10A, VCE = 5V)
(IC = 50mA, VCE = 5V)
(IC = 2.5A, VCE = 5V)
hFE
(IC = 5.0A, VCE = 5V)
(IC = 10A, VCE = 5V)
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
(IC = 2.5A, IB = 250mA)
(IC = 5.0A, IB = 500mA)
––
––
0.75
1.5
VCE (SAT)
VBE (SAT)
Volts
Volts
(IC = 2.5A, IB = 250mA)
(IC = 5.0 A, IB = 500mA)
––
––
1.45
2.2
60
70
––
––
SFT5002 - VCE = 5V, IC = 0.5A, f = 10MHz
SFT5004 - VCE = 5V, IC = 0.5A, f = 10MHz
Current Gain – Bandwidth Product
fT
MHz
pF
Output Capacitance
On Time
Cob
VCB = 10V, IE = 0, f = 1.0MHz
––
250
t(on)
t(off)
ns
ns
––
500
(VCC = 30 V, IC = 5.0 A, VBE (off) = 3.7 V, IB1 = IB2 = 500 mA, RL = 6Ω)
Off Time
––
1.3
NOTES:
* Pulse Test: Pulse Width = 300µsec, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500
PACKAGE OUTLINE
Part Number
Document
60-0149-059
60-0149-504
60-0149-503
SFT5002/59 and SFT5004/59
SFT5002J and SFT5004J
SFT5002M and SFT5004M
3/ For Package Outlines Contact Factory.
4/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0020D
DOC
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