SFT5553A/ELTX [SSDI]
Power Bipolar Transistor;
| 型号： | SFT5553A/ELTX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor |
| 文件： | 总2页 (文件大小：58K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PRELIMINARY
SFT5553A/E
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
5 AMP
100 VOLTS
PNP POWER
TRANSISTOR
DESIGNER'S DATA SHEET
1/
Part Number /Ordering Information
SFT5553A/ E HB TX
2/
Screening : _ = Not Screened
TX = TX Level
FEATURES
• BV 100V.
• Fast Switching.
TXV = TXV Level
CEO
S
= Space Level
3/
Lead Bend: _ = Not Applicable
= Straight
HB = Hoop Bend
• Very High Gain.
L
• Low Saturation Voltage.
• 200oC Operating, Gold Eutectic Die Attach.
• Designed for Low Loss Pass Regulation.
3/
Package:
E
= Milpack I (.624 x .450 x .150)
EI = Milpack I, Isolated
MAXIMUM RATINGS
SYMBOL
VALUE
UNITS
Collector-BaseVoltage
V
V
V
100
Volts
Volts
Volts
Amps
Amps
oC
CBO
CEO
EBO
Collector-Emitter Voltage
Emitter-Base Voltage
80
6.0
Continuous Collector Current
Base Current
I
I
5.0
C
B
2.0
Operating and Storage Temperature
T T
J, STG
-65 to +200
o
4/
Total Device Dissipation @ T # 100 C
Derate above 100 C
50
0.5
30
0.3
W
W/oC
C
P
D
o
4/
Thermal Resistance, Junction to Case 4/
R
1.2
2.6
oC/W
2JC
Available Part Numbers:
SFT5553A/E
MilPack I
SFT5553A/EL
SFT5553A/EHB
SFT5553A/EIL
SFT5553A/EIHB
PIN ASSIGNMENT
CODE FUNCTION
PIN 1
Collector Emitter
Base
PIN 2
PIN 3
Normal
Reverse
-
Base
R
Emitter Collector
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TR0013A
PRELIMINARY
SFT5553A/E
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ELECTRICAL CHARACTERISTICS
SYMBOL
MIN
80
MAX
-
UNITS
V
Collector-Emitter Breakdown Voltage
(I = 100:A
BV
BV
CEO
CBO
)
DC
C
Collector-Base Breakdown Voltage
(I = 100uA
100
-
-
V
V
)
DC
C
Emitter-Base Breakdown Voltage
(I = 20uA
BV
I
6
-
EBO
)
DC
E
Collector Cutoff Current
(V = 100V
10
100
10
:A
nA
nA
CBO
)
DC
CB
Collector Cutoff Current
(V = 80V
I
I
-
CEO
)
DC
CE
Emitter Cutoff Current
(V = 5V
-
EBO
)
DC
EB
DC Current Gain*
(V = 1V , I = 1.0A
)
)
)
80
70
60
160
120
120
CE
DC
C
DC
DC
DC
(V = 1.3V , I = 3.8A
CE
DC
C
H
FE
(V = 2V , I = 5.0A
CE
DC
C
Collector-Emitter Saturation Voltage*
(I = 3.8A I = 200mA
V
-
0.28
V
V
V
CE(SAT)
BE (SAT)
DC
DC
DC
)
DC
C
DC, B
Base-Emitter Saturation Voltage*
(I = 3.8A I = 200mA
V
-
-
0.92
0.87
-
)
DC
C
DC, B
Base-Emitter ON Voltage*
(I = 3.8A = 1.3V )
DC
V
BE (ON)
V
C
DC, CE
Current Gain Bandwidth Product
(I = 50mA = 10V f = 20MHz)
fT
70
-
MHz
pf
V
C
DC , CE
DC,
Output Capacitance
(V = 30V I = 0A f = 2.0MHz)
DC,
C
ob
75
CB
DC ,
E
(V = 20V
I = 1A
,
DC
CC
DC ,
C
Turn On Time
Turn Off Time
t
t
-
-
200
500
ns
ns
(on)
I
= I = 100mA
B2 DC
B1
(off)
R
= R = 40S, R = 20S)
B2 L
B1
NOTES:
*
Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact
Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
4/ Hot Case | Isolated Case.
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