SFT8600/5S [SSDI]
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN;
| 型号： | SFT8600/5S |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN 晶体管 |
| 文件： | 总3页 (文件大小：122K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT8600/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
1000 Volts
NPN Transistor
DESIGNER’S DATA SHEET
Part Number / Ordering Information 1/
SFT8600 __ __
│
│
│
│
│
└
└ Screening 2/
FEATURES:
__ = Not Screened
TX = TX Level
TXV = TXV Level
S = S Level
BVCEO to 400 volts
Very Low Saturation Voltage
Very Low Leakage
High Gain from 20 mA to 250 mA
200°C Operating, Gold Eutectic Die Attach
Superior Performance over JEDEC 2N5010-15
Series
Package
/5 = TO-5
High Speed Switching tf = 0.4µS TYP
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
(RBE = 1KΩ)
VCEO
VCER
400
1000
V
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCBO
VEBO
IC
1000
6
V
V
1
A
Base Current
IB
100
mA
Total Device Dissipation @ TC = 100º C
Derate above 25º C
3.3
33
W
mW/ºC
PD
Operating and Storage Temperature
Thermal Resistance, Junction to Case
Tj, Tstg
RθJC
-65 to +200
30
ºC
ºC/W
NOTES:
TO-5 (/5)
1/ For ordering information, price, operating curves, and availability - contact factory.
2/ Screening based on MIL-PRF-19500. Screening flows available on request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
SFT8600/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20µAdc, RBE = 1KΩ)
BVCEO
BVCER
400
1000
––
V
Collector–Base Breakdown Voltage
BVCBO
BVEBO
1000
6
––
––
V
V
(IC= 20µAdc)
Emitter–Base Breakdown Voltage
(IE= 20µAdc)
Collector Cutoff Current
(VCB= 800V)
(VCB= 800V @ TC= 150°C)
10
500
ICBO
––
µAdc
Collector Cutoff Current
ICEO
IEBO
––
––
10
1
µAdc
µAdc
(VCE= 400 Vdc)
Emitter Cutoff Current
(VEB= 4V)
DC Current Gain*
(IC= 100mAdc, VCE= 5Vdc, TC= -55°)
10
30
40
20
15
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
200
––
hFE
Collector – Emitter Saturation Voltage*
(IC= 20mAdc, IB= 2mAdc)
(IC= 100mAdc, IB=10mAdc)
––
––
0.3
0.5
VCE(Sat)
Vdc
Vdc
Base – Emitter Saturation Voltage *
(IC= 20mAdc, IB= 2mAdc)
(IC=100mAdc, IB=10mAdc)
––
––
0.8
1.0
VBE(Sat)
Current Gain Bandwidth Product
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
8.0
––
15
MHz
pF
fT
Output Capacitance
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
Cob
––
---
Delay Time
Rise Time
Storage Time
Fall Time
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
td
tr
ts
tf
50
150
3
nsec
nsec
µsec
nsec
---
800
* Pulse Test: Pulse Width = 300
µS, Duty Cycle = 2%
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
SFT8600/5
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1:Emitter
Pin 2:Base
Pin 3:Collector
Case:Collector
FIGURE 2
SAFE OPERATING AREA (t = 1 sec)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: XN0033J
DOC
相关型号：
SFT8600/5TX
Power Bipolar Transistor, 1A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin, TO-5, 3 PIN
SSDI
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