SFT8600 [SSDI]
1 AMP 1000 VOLTS NPN TRANSISTOR; 1安培1000伏特NPN晶体管
| 型号： | SFT8600 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | 1 AMP 1000 VOLTS NPN TRANSISTOR |
| 文件： | 总2页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SFT8600
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
1000 Volts
FEATURES:
NPN Transistor
• BVCEO to 400 volts
• Very Low Saturation Voltage
• Very Low Leakage
• High Gain from 20 mA to 250 mA
• 200° C Operating, Gold Eutectic Die Attach
• Superior Performance over JEDEC 2N5010-15 Series
• High Speed Switching tf = 0.4µS TYP
Maximum Ratings
Symbol
Value
Units
Collector – Emitter Voltage
VCEO
VCER
400
V
(RBE = 1KΩ)
1000
Collector – Base Voltage
Emitter – Base Voltage
Collector Current
VCBO
VEBO
IC
1000
6
V
V
A
A
1
Base Current
IB
100
2.0
2.0
W
Total Device Dissipation @ TC = 100º C
PD
Derate above 25º C
mW/ºC
Operating and Storage Temperature
Tj, Tstg
RθJC
-65 to +200
30
ºC
Thermal Resistance, Junction to Case
ºC/W
CASE OUTLINE: TO-5
FIGURE 1
OUTLINE AND DIMENSIONS
All dimensions are in inches
Tolerances:
(unless otherwise specified)
XX: ±0.01”
XXX: ±0.005”
Pin 1: Emitter
Pin 2: Base
Pin 3: Collector
Case: Collector
NOTE: All specifications are subject to change without notification.
DATA SHEET #: XN0033 G
DOC
SCD's for these devices should be reviewed by SSDI prior to release.
SFT8600
Solid State Devices, Inc.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Max
Units
Collector – Emitter Breakdown Voltage
(IC= 10mAdc)
(IC= 20µAdc, RBE = 1KΩ)
BVCEO
BVCER
400
––
V
1000
Collector–Base Breakdown Voltage
BVCBO
BVEBO
1000
6
––
––
V
V
(IC= 20µAdc)
Emitter–Base Breakdown Voltage
(IE= 20µAdc)
Collector Cutoff Current
10
ICBO
––
µAdc
(VCB= 800V)
500
(VCB= 800V @ TC= 150°)
Collector Cutoff Current
10
ICEO
IEBO
––
––
µAdc
µAdc
(VCE= 400 Vdc)
Emitter Cutoff Current
1
(VEB= 4V)
DC Current Gain*
(IC= 100mAdc, VCE= 5Vdc, TC= -55°)
10
30
40
20
15
(IC= 5mAdc, VCE= 5Vdc)
(IC= 10mAdc, VCE= 5Vdc)
(IC= 100mAdc, VCE= 5Vdc)
(IC= 250mAdc, VCE= 5Vdc)
200
––
hFE
Collector – Emitter Saturation Voltage*
––
––
0.3
0.5
(IC= 20mAdc, IB= 2mAdc)
VCE(Sat)
Vdc
Vdc
(IC= 100mAdc, IB=10mAdc)
Base – Emitter Saturation Voltage *
––
––
0.8
1.0
(IC= 20mAdc, IB= 2mAdc)
VBE(Sat)
(IC=100mAdc, IB=10mAdc)
Current Gain Bandwidth Product
8.0
––
––
15
MHz
pF
fT
(IC= 100mAdc, VCE= 10Vdc, f= 10MHz)
Output Capacitance
Cob
(VCB= 20Vdc, IE= 0 Adc, f= 1.0MHz)
(VCC = 125Vdc,
IC = 100 mAdc,
IB1 = 20 mAdc,
IB2 = 40 mAdc)
Delay Time
Rise Time
td
tr
ts
tf
50
150
3
nsec
nsec
µsec
nsec
---
---
Storage Time
Fall Time
800
* Pulse Test: Pulse Width = 300 µS, Duty Cycle = 2%
For thermal derating curves and other characteristic curves please contact SSDI Marketing Department.
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