SHF1100S [SSDI]
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;型号: | SHF1100S |
厂家: | SOLID STATES DEVICES, INC |
描述: | Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 |
文件: | 总4页 (文件大小:2171K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SHF1100 - SHF1150 Series
SHF1150
Axial Leaded
SHF1150SMS
Surface Mount
Square Tab
A Novel 1 amp Void Free Glass Ceramic Nanosize Package
9 nsec Hyper Fast Soft Recovery Nanospeed Rectifier
SSDI announces our latest technological advancement, the SHF1150. The
SHF1150 is a void free glass ceramic encapsulated rectifier that provides a
more rugged, high reliability replacement for a 1N6642 and a smaller, faster
replacement for the 1N5806.
Features
▪▪ Hyper fast recovery time
1N6642
SHF1150
1.0 A
1N5806
@25°C
IO
0.3 A
2.5 A
(soft recovery / low EMI): 9 nsec max
@ 8.3mS, 25°C
@.375”, 25°C
@25°C
▪▪ Low reverse leakage current
▪▪ Low forward voltage drop
▪▪ Hermetically sealed in a glass ceramic void
free construction in a DO-35 package
envelope
IFSM
RθJL
RθJE
BVR
IR
2.5 A
20 A
35 A
150°C/W
80°C/W
36°C/W
40°C/W
20°C/W
13°C/W
@100µA, 25°C
@20V, 25°C
100 V min
160 V min
50 nA max
75 nA max
150 nA max
0.575 V max
0.7 V max
0.8 V max
0.85 V max
0.90 V max
0.975 V max
50 µA max
75 µA max
150 µA max
0.5 V max
0.62 V max
0.81 V max
0.92 V max
160 V min
25 nA max
--
▪▪ High temperature metallurgical category
@75V, 25°C
IR
500 nA max
--
I bond
@150V, 25°C
@1mA, 25°C
@10mA, 25°C
@100mA, 25°C
@200mA, 25°C
@500mA, 25°C
@1.0A, 25°C
@20V, 150°C
@75V, 150°C
@150V, 150°C
@10mA, 150°C
@100ma, 150°C
@10mA, -55°C
@100mA, -55°C
IR
--
1.0 µA max
▪▪ Solid silver leads (copper leads also
VF
VF
VF
VF
VF
VF
IR
--
--
available)
0.8 V max
--
▪▪ Excellent liquid-to-liquid thermal shock
1.00 V max
--
performance
▪▪ Designed for high efficiency applications
▪▪ Radiation tolerant
▪▪ Avalanche breakdown
▪▪ Replacement for 1N6638, 1N6643 and
--
--
--
--
--
0.875 V max
50 µA max
--
1N5806
IR
100 µA max
--
▪▪ Available in axial leaded and surface mount
square tab versions
▪▪ Available in single phase, three phase and
diode array configurations
▪▪ TX, TXV, and S-level screening available
▪▪ Samples available on request
IR
--
175 µA @ 125°C
VF
VF
VF
VF
0.8 V max
--
--
--
--
--
--
1.2 V max
Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com
SHF1100 - SHF1150 Series
CASE OUTLINES
ØA
ØC
D
B
D
AXIAL
DIM
A
MIN
.056”
.125”
.018”
1.00”
MAX
.075”
.140”
.022”
1.50”
B
C
D
A
B
A
D
C
SMS
MIN
DIM
A
MAX
.085”
.200”
.028”
--
.070”
.168”
.019”
.001”
B
C
D
Solid State Devices, Inc. ▪ 14701 Firestone Blvd. La Mirada, CA 90638 ▪ (562) 404-4474 ▪ FAX (562) 404-1773 ▪ www.ssdi-power.com
SHF1100 thru SHF1150
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
1 AMP
100 – 150 VOLTS
9 nsec
Designer’s Data Sheet
Part Number/Ordering Information 1/
____ __ __
SHF1
HYPER FAST
2/
│
│
│
│
│
│
│
│
│
│
└
│
│
│
│
│
│
└
└
Screening
SOFT RECOVERY RECTIFIER
__ = Not Screened
TX = TX Level
TXV = TXV
FEATURES:
S = S Level
Hyper Fast Reverse Recovery Time 9 ns Max
Low Forward Voltage Drop
Low Reverse Leakage Current
Avalanche Breakdown
Void Free Glass Ceramic Chip Construction
Hermetically Sealed
Package Type
__ = Axial Leaded
SMS = Surface Mount Square Tab
Device Type ( VRWM )
100 = 100 V
Solid Silver Lead
Excellent liquid-to-liquid thermal shock performance
Available in Axial & Square Tab Versions
For High Efficiency Applications
150 = 150 V
TX, TXV, and S-Level Screening Available2/
Replacement for 1N6638, 1N6642 and 1N5806
High Temperature Metallurgical Class I Bond
MAXIMUM RATINGS 3/
RATING
SYMBOL
VALUE
UNIT
Peak Repetitive Reverse Voltage
DC Blocking Voltage
SHF1100
SHF1150
VRWM
VR
100
150
Volts
Average Rectified Forward Current
(Resistive Load, 60 Hz, Sine Wave, TC = 25°C)
1
IO
Amp
Peak Surge Current
20
IFSM
Amps
°C
(8.3 msec Pulse, Half Sine Wave Superimposed on Io, allow junction to reach
equilibrium between pulses, TC = 25°C)
-65 to +175
Operating & Storage Temperature
TOP and TSTG
Thermal Resistance
SMS- Junction to End Tab
Axial- Junction to Lead @ .375”
20
80
RθJE
RθJL
°C/W
Axial Leaded
SMS
NOTES:
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
3/ Unless Otherwise Specified, All Electrical Characteristics @25ºC.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0158A
DOC
SHF1100 thru SHF1150
SERIES
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, CA 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
3/
ELECTRICAL CHARACTERISTICS
CHARACTERISTICS
SYMBOL
LIMIT
UNIT
@ IF = 1mA
@ IF = 10mA
@ IF = 100mA
@ IF = 200mA
@ IF = 500mA
@ IF = 1A
VF1
VF2
VF3
VF4
VF5
VF6
0.575
0.700
0.800
0.850
0.900
0.975
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 25°C)
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = 150°C)
@ IF = 10mA
@ IF = 100mA
VF7
VF8
0.5
0.62
Vdc
Vdc
Vdc
Maximum Instantaneous Forward Voltage Drop
(Pulsed, TA = -55°C)
@ IF = 10mA
@ IF = 100mA
VF9
VF10
0.81
0.92
Minimum Breakdown Voltage
Ir = 100 μA
BVR
100
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR1
IR2
IR3
50
75
150
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 25°C)
nA
@ VR = 20V
@ VR = 75V
@ VR = max rated
IR4
IR5
IR6
50
75
150
Maximum Reverse Leakage Current
(300 μs Pulse Minimum , TA = 150°C)
µA
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 0V
CJ1
14
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 1.5V
CJ2
CJ3
trr
10
6
pf
Maximum Junction Capacitance
(TA = 25°C , f = 1MHz) VR = 10V
pf
Maximum Reverse Recovery Time
(IF = 50 mA, IR = 100 mA, IRR = 25 mA)
9
nsec
nsec
Maximum Forward Recovery Time
(IF = 50 mA)
Tfr
18
SMS
AXIAL
DIM
A
B
C
D
MIN
MAX
.085”
.200”
.028”
--
DIM
A
B
C
D
MIN
MAX
.075”
.140”
.022”
1.50”
.070”
.168”
.019”
.001”
.056”
.125”
.018”
1.00”
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RC0158A
DOC
相关型号:
SHF1100SMSTXV
Rectifier Diode, 1 Element, 1A, 100V V(RRM), Silicon, HERMETIC SEALED, SMS, 2 PIN
SSDI
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