SPD0902TX [SSDI]
Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2;
| 型号： | SPD0902TX |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | Rectifier Diode, Schottky, 1 Phase, 1 Element, 2A, 90V V(RRM), Silicon, HERMETIC SEALED PACKAGE-2 二极管 |
| 文件： | 总2页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPD0802 and SMS
thru
SPD1002 and SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Designer’s Data Sheet
Part Number/Ordering Information 1/
2 AMP
80 - 100 VOLTS
SCHOTTKY
RECTIFIER
SPD __ __ __
Screening 2/
__ = Not Screened
TX = TX Level
TXV = TXV
│
│
│
│
│
│
│
│
└
│
│
│
│
│
└
└
S = S Level
Features:
Package Type
•
•
•
•
•
•
•
•
PIV to 100 Volts
__ = Axial Leaded
SMS = Surface Mount Square Tab
Family/Voltage
0802 = 80 V
Extremely Low Forward Voltage Drop
Low Reverse Leakage Current
High Surge Capacity
HV/Replacement for 1N5817 - 1N5819 Series
Hermetically Sealed
0902 = 90 V
1002 = 100 V
TX, TXV, and Space Level Screening Available2/
Category III metallurgical bond per MIL PRF
19500 appendix A
Maximum Ratings
Symbol
Value
Units
V
80
90
100
RRM
SPD0802 & SMS
SPD0902 & SMS
SPD1002 & SMS
V
RWM
Reverse Voltage
Volts
V
R
Average Rectified Forward Current
Io
2
Amps
Amps
o
(Resistive Load, 60Hz, Sine Wave, T or T = 55 C)
L
E
Peak Surge Current
(8.3 ms Pulse, Half Sine Wave Superimposed on Io, allow
I
40
FSM
o
junction to reach equilibrium between pulses, T = 25 C)
A
T
& T
Operating and Storage Temperature Range
OP
STG
-55 to +250
ºC
Maximum Thermal Resistance
Junction to Lead, L = .25" (Axial Lead)
Junction to End Tab (Surface Mount)
R
θJL
R
θJE
15
12
ºC/W
NOTES:
Axial Lead
Surface Mount
Square Tab
1/ For Ordering Information, Price, and Availability- Contact Factory.
2/ Screening Based on MIL-PRF-19500. Screening Flows Available on
Request.
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0006E
DOC
SPD0802 and SMS
thru
SPD1002 and SMS
Solid State Devices, Inc.
14701 Firestone Blvd * La Mirada, Ca 90638
Phone: (562) 404-4474 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
Electrical Characteristic
Symbol
Min
Max
Units
Volts
If = 0.5A
If = 1A
If = 2A
Vf1
Vf2
Vf3
Vf4
Vf5
---
---
---
---
---
0.73
0.85
0.95
0.88
0.78
Instantaneous Forward Voltage Drop
(Tj = 25ºC, 300 - 500 µsec pulse)
Instantaneous Forward Voltage Drop
(IF = 1A, 300 - 500 µsec pulse)
TA = -55C
TA = 100C
Volts
µA
Reverse Leakage Current
(Vr = Rated Vr, TA = 25ºC, 300 µsec min pulse)
Ir1
Ir2
Cj
---
---
---
100
2
Reverse Leakage Current
(Vr = Rated Vr, TA = 100ºC, 300 µsec min pulse)
mA
pF
Junction Capacitance
(Vr=10 Vdc, TA=25ºC, f=1MHz)
40
Consult manufacturing for operating curves
DIMENSIONS
MIN
DIM
A
MAX
0.155”
0.185”
0.107”
--
B
0.080”
C
1.00”
D
.028”
DIMENSIONS
MIN
0.32”
DIM
A
MAX
0.235”
0.135”
0.030”
--
0.200”
B
0.125”
C
0.020”
D
0.002”
Dimensions prior to solder dip
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: RS0006E
DOC
相关型号：
SPD09P06PL G
Infineon’s highly innovative OptiMOS™ families include p-channel power MOSFETs. These products consistently meet the highest quality and performance demands in key specifications for power system design such as on-state resistance and figure of merit characteristics.
INFINEON
SPD09P06PLGBTMA1
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
SPD09P06PLGXT
Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB, GREEN, PLASTIC, TO-252, 3 PIN
INFINEON
©2020 ICPDF网 联系我们和版权申明