SSG55N60M [SSDI]

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT; 55 AMP / 600伏特1.65 V饱和超快IGBT
SSG55N60M
元器件型号: SSG55N60M
生产厂家: SOLID STATES DEVICES, INC    SOLID STATES DEVICES, INC
描述和应用:

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT
55 AMP / 600伏特1.65 V饱和超快IGBT

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
PDF文件: 总2页 (文件大小:64K)
下载文档:  下载PDF数据表文档文件
型号参数:SSG55N60M参数

SSG55N60MS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-254AA, HERMETIC SEALED, TO-254, 3 PIN

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0 SSDI

SSG55N60MTX

暂无描述

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0 SSDI

SSG55N60MTXV

暂无描述

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0 SSDI

SSG55N60N

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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8 SSDI

SSG55N60N

1.65 V saturation ultrafast IGBT

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14 SSDI

SSG55N60NS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTX

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60NTXV

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-258AA, HERMETIC SEALED, TO-258, 3 PIN

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0 SSDI

SSG55N60P

1.65 V saturation ultrafast IGBT

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7 SSDI

SSG55N60P

55 AMP /600 Volts 1.65 V saturation ultrafast IGBT

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4 SSDI

SSG55N60P

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PS

Insulated Gate Bipolar Transistor, 55A I(C), 600V V(BR)CES, N-Channel, TO-259, HERMETIC SEALED PACKAGE-3

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0 SSDI

SSG55N60PTX

暂无描述

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0 SSDI