TG0002_15 [SSDI]
FAST POWER IGBT;
| 型号： | TG0002_15 |
| 厂家： | 
SOLID STATES DEVICES, INC |
| 描述： | FAST POWER IGBT 双极性晶体管 |
| 文件： | 总2页 (文件大小：32K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG42N60
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
50 AMP
600 VOLTS
FAST
POWER IGBT
DESIGNER'S DATA SHEET
1/
Part Number /Ordering Information
SSG42N60 N _ TX
2/
Screening : _ = Not Screened
APPLICATION NOTES:
• 600V IGBT Technology
TX = TX Level
TXV = TXV Level
•
Positive Temperature Coefficient for Ease of
S
= Space Level
Paralleling
3/4/
Lead Bend _= Straight
•
High Current Switching for Motor Drives and
Inverters
Low Saturation Voltage at High Currents.
Low Switching Losses.
High Short Circuit Capability
MOS Input, Voltage Controlled.
Ultra Fast Free Wheeling Diodes
Hermetic Sealed Construction.
TX, TXV, and S-Level Screening Available.
UB = Up Bend
DB = Down Bend
3/
•
•
•
•
•
•
•
Package:
N
P
= TO-258, Isolated
= TO-259, Isolated
S2 = SMD2
MAXIMUM RATINGS
SYMBOL
VALUE
600
UNITS
Volts
Collector-Emitter Voltage
V
CEO
Continuous Collector Current
@ T = 25oC
70
42
40
C
I
I
@ T = 90oC
Amps
Amps
C
C
Average Diode Current
Peak Collector Current
@ T = 25oC
C
O
I
I
140
300
C(pk)
IFSM
Gate Emitter Voltage
V
E20
-65 to +200
200
Volts
oC
GE
Operating and Storage Temperature
T T
J, STG
Total Device Dissipation @ T = 25oC
P
W
C
D
Thermal Resistance,
Junction to Case
0.8
0.7
N, P
S2
R
oC/W
θJC
TO-258 (N)
TO-259 (P)
SMD2 (S2)
NOTE: All specifications are subject to change without notification.
SCD's for these devices should be reviewed by SSDI prior to release.
DATA SHEET #: TG0002A
SSG42N60
SERIES
SOLID STATE DEVICES, INC.
14830 Valley View Blvd * La Mirada, Ca 90638
Phone: (562) 404-7855 * Fax: (562) 404-1773
ssdi@ssdi-power.com * www.ssdi-power.com
ELECTRICAL CHARACTERISTICS 5/
Collector - Emitter Breakdown Voltage
SYMBOL
MIN
600
TYP
-
MAX
-
UNITS
V
V
(BR)CES
(V = 0V, I = 2mA)
GE
C
Collector - Emitter Saturation Voltage
(V = 15V, I = 50A)
V
-
2
4
2.5
5
V
V
CE (SAT)
GE
C
Gate - Emitter Threshold Voltage
(V = V , I = 1mA)
V
3
GE (th)
GE
CE
C
Zero Gate Voltage Collector Current
T = 25oC
-
-
-
-
150
12
µA
mA
J
I
I
CES
GES
(V = 600V, V = 0V)
T = 100oC
CE
GE
J
Gate - Emitter Leackage Current
(V = 30V, V = 0V)
-
-
-
-
-
120
nA
pF
pF
pF
GE
CE
Input Capacitance
(V = 25V, V = 0V, f = 1MHz)
C
2750
250
50
-
-
-
iss
oss
rss
CE
GE
Output Capacitance
(V = 25V, V = 0V, f = 1MHz)
C
C
CE
GE
Reverse Transfer Capacitance
(V = 25V, V = 0V, f = 1MHz)
CE
GE
Turn-On Delay Time
Rise Time
t
-
-
-
-
25
30
-
-
-
-
nsec
nsec
nsec
nsec
d(on)
(V = 400V, I = 50A
,
CC
C
DC
t
r
V
= 15 / 0V, R = --Ω,
G
GE
t = 10µsec, Duty Cycle ≤ 1%
P
Turn-Off Delay Time
Fall Time
t
500
360
d(off)
T = 150oC)
j
t
f
Reverse Diode Forward Voltage Drop
I = 20A
I = 40A
F
1.35
1.55
F
V
-
-
-
-
V
F
(V = 0V)
GE
Reverse Diode Reverse Recovery Time
t
35
nsec
RR
(I = 0.5A, I = 1A, I = 0.25A)
F
R
RR
NOTES:
Available Part Numbers:
SSG42N60N SSG42N60NDB SSG42N60NUB
SSG42N60P SSG42N60PDB SSG42N60PUB
SSG42N60S2
* Pulse Test: Pulse Width = 300us, Duty Cycle = 2%
1/ For Ordering Information, Price, and Availability Contact Factory.
2/ Screening per MIL-PRF-19500.
3/ For Package Outlines Contact Factory.
PIN ASSIGNMENT
4/ Up and Down Bend Configurations Available for N and P (TO-258
and TO-259) Packages Only.
PACKAGE
TO-258
TO-259
SMD2
Collector Emitter
Gate
Pin 3
Pin 3
Pin 3
5/ All Electrical Characteristics @25oC, Unless Otherwise Specified.
Pin1
Pin 1
Pin 1
Pin 2
Pin 2
Pin 2
相关型号：
©2020 ICPDF网 联系我们和版权申明