PS1191RB [STANLEY]

Surface Mount Phototransistor/Reverse Mount Type; 表面贴装光电晶体管/反安装型
PS1191RB
型号: PS1191RB
厂家: STANLEY ELECTRIC CO.,LTD.    STANLEY ELECTRIC CO.,LTD.
描述:

Surface Mount Phototransistor/Reverse Mount Type
表面贴装光电晶体管/反安装型

晶体 光电 晶体管 光电晶体管
文件: 总10页 (文件大小:184K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Features  
Package  
3216 Reverse Mount type, Black Visible Radiation Cut Filter epoxy  
Outer Dimension 3.2 x 1.6 x 1.1mm ( L x W x H )  
Flat Lenz Type  
Product features  
Photo Current : 2mA TYP. (VR=5V,Ee=0.5mW/cm2)  
Wide Distribution  
Reverse Mount Type  
Visible Radiation Cut Filter under 700nm  
Lead–free soldering compatible  
RoHS compliant  
Peak Sensitivity Wavelength  
Half Intensity Angle  
Die materials  
900nm  
θx = 130 deg., θy = 135 deg.  
Si  
Rank grouping parameter  
Assembly method  
Sorted by photo current per rank taping  
Auto pick & place machine (Auto Mounter)  
Soldering methods  
Reflow soldering, and manual soldering  
Please refer to Soldering Conditions about soldering.  
Taping and reel  
ESD  
3,000pcs per reel in a 8mm width tape. (Standard)  
Reel diameter:φ180mm  
2kV (HBM)  
Recommended Applications  
Car Audio, Electric Household Appliances, OA/FA, PC/Peripheral Equipment, Other General Applications  
Page 1  
2006.8.31  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
(Ta=25)  
Absolute Maximum Ratings  
Absolute Maximum Ratings  
Item  
Symbol  
Pc  
Unit  
Collector Dissipation  
Collector-Emitter Voltage  
Emitter-Collector Voltage  
Collector Current  
75  
30  
5
mW  
V
VCEO  
VECO  
Ic  
V
20  
mA  
Operating Temperature  
Storage Temperature  
Topr  
Tstg  
-30 +85  
-40 +100  
(Ta=25)  
Electro-Optical Characteristics  
Item  
Symbol  
Characteristics  
Unit  
Conditions  
Min.  
TYP.  
0.4  
2
mA  
mA  
VCE=5V,  
Ee=5mW/cm2  
Photo Current  
Response Time  
Ic  
1
VCE=10V, Ic=2mA,  
R =100  
tr/tf  
ICEO  
TYP.  
8/9  
s
μ
Ω
L
Dark Current  
VCEO=10V  
Max.  
TYP.  
0.1  
A
μ
Peak Sensitivity Wavelength  
VCE=5V  
p
900  
nm  
λ
130( x)  
θ
Spatial Half Width  
VCE=5V  
TYP.  
deg.  
⊿θ  
135( y)  
θ
1 Color temperature is 2,856K. Employs a standard tungsten lamp.  
Page 2  
2005.3.2  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
(Ta=25)  
Photo Current Rank  
Ic(mA)  
Rank  
Condition  
MIN.  
0.4  
0.7  
1.2  
2.1  
3.6  
MAX .  
0.8  
A
B
C
D
E
1.4  
V
CE = 5V  
2.4  
E e = 5mW/cm2  
4.2  
7.2  
Please contact our sales staff concerning rank designation.  
Page 3  
2005.3.2  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Technical Data  
Relative Sensitivity vs. Sensitivity Wavelength  
Spatial Distribution Example  
Condition : Ta = 25, VCE = 5V  
Condition : Ta = 25℃  
Sensitivity Wavelength [nm]  
Radiation Luminance vs. Relative Photo Current  
Collector-Emitter Voltage vs. Photo Current  
Condition : Ta = 25, VCE = 5V  
Condition : Ta = 25℃  
Radiation Luminance Ee(mW/cm2)  
Collector-Emitter Voltage VCE(V)  
It is based on Ee=5mW/cm2.  
Employs a standard tungsten lamp of 2,856K.  
Employs a standard tungsten lamp of 2,856K.  
Page 4  
2006.10.16  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Technical Data  
Response Time Measuring Circuit  
Load Resistance vs. Response Time  
Condition : VCE=10V, Ic=2mA, Ta=25℃  
Load Resistance : RL(Ω)  
Ambient Temperature vs. Collector Dissipation  
Ambient Temperature vs. Dark Current  
Condition : VCEO = 10V  
Ambient Temperature : Ta()  
Ambient Temperature : Ta()  
2005.3.31  
Page 5  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Technical Data  
Ambient Temperature vs. Relative Photo Current  
Condition : VCE = 5V  
Ambient Temperature : Ta()  
Page 6  
2005.3.2  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
(Unit: mm)  
Package Dimensions  
Weight: (6.60)mg  
(Unit: mm)  
Recommended Soldering Pattern  
Taping Specification  
(Unit: mm)  
Quantity: 3,000pcs/ reel (standard)  
Page 7  
2005.3.2  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Reflow Soldering Conditions  
1) The above profile temperature gives the maximum temperature of the device resin surface.  
Please set the temperature so as to avoid exceeding this range.  
2) Total times of reflow soldering process shall be no more than 2 times.  
When the second reflow soldering process is performed, intervals between the first  
and second reflow should be short as possible (while allowing some time for the  
component to return to normal temperature after the first reflow) in order to prevent the  
device from absorbing moisture.  
3) Temperature fluctuation to the device during the pre-heating process shall be minimized.  
Manual Soldering Conditions  
Iron tip temp.  
Soldering time and frequency  
(MAX.) (30 W Max.)  
350  
3 s  
1 time  
(MAX.)  
(MAX.)  
Page 8  
2005.3.2  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Reliability Testing Result  
Reliability Testing  
Testing Conditions  
Applicable Standard  
Duration  
1,000 h  
Failure  
Result  
Room Temp.  
Operating Life  
EIAJ ED-  
4701/100(101)  
Ta = 25, Pc = Maxium Rated Power Dissipation  
0/16  
(Pretreatment) Individual standard  
(Reflow Soldering) Pre-heating  
150℃~180120s  
Resistance to  
Soldering Heat  
EIAJ ED-  
4701/300(301)  
Twice  
0/16  
Operating Heating  
230Min.  
Peak temperature 260℃  
Minimum Rated Storage Temperature(30min)  
Normal Temperature(15min)  
Maximum Rated Storage Temperature(30min)  
Normal Temperature(15min)  
EIAJ ED-  
4701/100(105)  
Temperature Cycling  
5 cycles  
0/16  
Wet High Temp.  
Storage Life  
EIAJ ED-  
4701/100(103)  
Ta = 60±2, RH = 90±5%  
1,000 h  
1,000 h  
1,000 h  
2 h  
0/16  
0/16  
0/16  
0/16  
High Temp.  
Storage Life  
EIAJ ED-  
4701/200(201)  
Ta = Maximum Rated Storage Temperature  
Ta = Minimum Rated Storage Temperature  
Low Temp.  
Storage Life  
EIAJ ED-  
4701/200(202)  
98.1m/s2 (10G), 100 2KHz sweep for 20min.,  
XYZ each direction  
Vibration,  
Variable Frequency  
EIAJ ED-  
4701/400(403)  
Failure Criteria  
Items  
Symbols  
Conditions  
Failure criteria  
E
E Value of each product  
Irradiance of Photo Current  
CE Value of each product  
Collector-emitter Voltage of  
Photo Current  
Testing Max. Value Initial Value x 1.3  
Testing Min. Value Initial Value x 0.7  
Photo Current  
IC  
V
CEO  
V
Value of each product  
Dark Current  
ICEO  
Collector-emitter Voltage of Dark  
Current  
Testing Max. Value Spec. Max. Value x 1.2  
Occurrence of notable decoloration,  
deformation and cracking  
Cosmetic Appearance  
-
-
Page 9  
2007.8.31  
PS1191RB  
Surface Mount Phototransistor/Reverse Mount Type  
Special Notice to Customers Using the Products and  
Technical Information Shown in This Data Sheet  
1) The technical information shown in the data sheets are limited to the typical characteristics and circuit  
examples of the referenced products. It does not constitute the warranting of industrial property nor the  
granting of any license.  
2) For the purpose of product improvement, the specifications, characteristics and technical data described in  
the data sheets are subject to change without prior notice. Therefore it is recommended that the most  
updated specifications be used in your design.  
3) When using the products described in the data sheets, please adhere to the maximum ratings for operating  
voltage, heat dissipation characteristics, and other precautions for use. We are not responsible for any  
damage which may occur if these specifications are exceeded.  
4) The products that have been described to this catalog are manufactured so that they will be used for the  
electrical instrument of the benchmark (OA equipment, telecommunications equipment, AV machine, home  
appliance and measuring instrument).  
The application of aircrafts, space borne application, transportation equipment, medical equipment and  
nuclear power control equipment, etc. needs a high reliability and safety, and the breakdown and the wrong  
operation might influence the life or the human body. Please consult us beforehand if you plan to use our  
product for the usages of aircrafts, space borne application, transportation equipment, medical equipment  
and nuclear power control equipment, etc. except OA equipment, telecommunications equipment, AV  
machine, home appliance and measuring instrument.  
5) In order to export the products or technologies described in this data sheet which are under the  
“Foreign Exchange and Foreign Trade Control Law,” it is necessary to first obtain an export permit from the  
Japanese government.  
6) No part of this data sheet may be reprinted or reproduced without prior written permission from Stanley  
Electric Co., Ltd.  
7) The most updated edition of this data sheet can be obtained from the address below:  
http://www.stanley-components.com  
Page 10  
2007.8.31  

相关型号:

PS1192HA

PHOTO TRANSISTOR
ETC

PS11NG

Power Supply Support Circuit, Adjustable, 1 Channel, PDSO14, SOIC-14
SUPERTEX

PS12

Quad Power Sequencing Controller
SUPERTEX

PS12

Signaling Strobe and Sounder
SYSTEMSENSOR

PS12

Monostable or bistable relays Single and double Coil magnet latching Type available
DBLECTRO

PS12-1W

PS12 Series High Performance Solid State Relays
TE

PS12-1Y

PS12 Series High Performance Solid State Relays
TE

PS120

120W Single Output Industrial DIN Rail Power Supply
ALTECH

PS120

Silicon Controlled Rectifier, 20A I(T)RMS, 20000mA I(T), 100V V(DRM), 100V V(RRM), 1 Element
HUTSON

PS120

Power Shielded Inductor
ALLIED

PS120-1R0M-RC

Power Shielded Inductor
ALLIED

PS120-1R5M-RC

Power Shielded Inductor
ALLIED