AM0912-080 [STMICROELECTRONICS]
AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS; 航空电子应用射频和微波晶体管
| 型号： | AM0912-080 |
| 厂家： | 
ST |
| 描述： | AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS |
| 文件： | 总3页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM0912-080
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
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REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
.400 x .400 2NLFL (S042)
POUT
90 W MIN. WITH 13 dB GAIN
=
hermetically sealed
BANDWIDTH 225 MHz
ORDER CODE
BRANDING
0912-80
AM0912-080
PIN CONNECTION
DESCRIPTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0912-080 is housed in the unique
AMPAC™ Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
°
= 25 C)
ABSOLUTE MAXIMUM RATINGS (T
case
Symbol
PDISS
IC
Parameter
Value
220
7.0
Unit
Power Dissipation*
Device Current*
(TC ≤100˚C)
W
A
VCC
TJ
Collector-Supply Voltage*
50
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
65 to +200
−
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
0.80
*Applies only to rated RF amplifier operation
1/3
September 1992
AM0912-080
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO
BVEBO
BVCER
ICBO
IC = 40mA
IE = 10mA
IC = 40mA
VCB = 50V
VCE = 5V
IE = 0mA
IC = 0mA
RBE = 10Ω
65
3.0
65
—
—
—
—
—
—
V
V
—
—
V
12
mA
—
hFE
IC = 2A
20
120
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
90
Typ. Max.
f = 960 — 1215MHz
f = 960 — 1215MHz
f = 960 — 1215MHz
PIN 13W
VCC 50V
100
44
—
—
—
W
%
=
=
η
c
PIN 13W
VCC 50V
38
=
=
GP
PIN 13W
VCC 50V
8.4
—
dB
=
=
Note:
Pulse Width
10µSec
10%
=
=
Duty Cycle
TEST CIRCUIT
Ref. Dwg. No. J-313120
.120
All dimensions are in inches.
Substrate material: .025 thick AI O
2
3
C5
L1,L2 : No. 32 Wire, 4 Turn .062 I.D.
RBE 0 - 1.0 Ohm
: 100 MF, Electrolytic 50V
C1,C2: 0.3 - 3.5 pF Johanson Capacitors, or Equiv.
C3 100 pF Chip Capacitor
C4,C6: 1500 pF RF Feedthru
:
:
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AM0912-080
PACKAGE MECHANICAL DATA
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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