AM83135-015 [STMICROELECTRONICS]
RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS; 射频与微波晶体管S波段雷达应用
| 型号： | AM83135-015 |
| 厂家： | 
ST |
| 描述： | RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
AM83135-015
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
PRELIMINARY DATA
.
.
.
.
.
.
.
REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT
15 W MIN. WITH 5.2 dB GAIN
=
.310 x .310 2LFL (S064)
ORDER CODE
BRANDING
83135-15
DESCRIPTION
AM83131-015
The AM83135-015 device is a high power silicon
bipolar NPN transistor specifically designed for
S-Band radar pulsed output and driver applica-
tions.
PIN CONNECTION
This device is characterized at 100µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles,
and temperatures, and can withstand a 3:1 out-
put VSWR with a + 1 dB input overdrive. Low RF
thermal resistance, refractory/gold metallization,
and computerized automatic wire bonding tech-
niques ensure high reliability and product consis-
tency (including phase characteristics).
The AM83135-015 is supplied in the IMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output impedance matching circuitry, and
is intended for military and other high reliability
applications.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T
= 25°C)
case
Symbol
PDISS
IC
Parameter
Value
71
Unit
Power Dissipation*
Device Current*
(TC ≤ 50˚C)
W
A
3.0
VCC
TJ
Collector-Supply Voltage*
46
V
°
Junction Temperature (Pulsed RF Operation)
Storage Temperature
250
C
C
°
TSTG
65 to +200
−
THERMAL DATA
°
C/W
RTH(j-c)
Junction-Case Thermal Resistance*
2.8
*Applies only to rated RF amplifier operation
1/3
July 27, 1994
AM83135-015
°
= 25 C)
ELECTRICAL SPECIFICATIONS (T
case
STATIC
Value
Symbol
Test Conditions
Unit
Min. Typ.
Max.
—
BVCBO IC = 10 mA
IE = 0 mA
IC = 0 mA
RBE = 10 Ω
VCE = 40 V
IC = 1 A
55
3.5
55
—
—
—
—
—
—
V
V
BVEBO
IE = 2 mA
—
BVCER IC = 10 mA
—
V
ICES
hFE
VBE = 0 V
VCE = 5 V
8
mA
—
30
300
DYNAMIC
Symbol
POUT
Value
Test Conditions
Unit
Min.
15
Typ. Max.
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
f = 3.1 − 3.5 GHz
PIN 4.5 W
VCC 40 V
—
—
—
—
—
—
W
%
=
=
η
c
POUT 15 W
VCC 40 V
30
=
=
PG
POUT 15 W
VCC 40 V
5.2
dB
=
=
Note:
Pulse Width
100µS
10%
=
=
Duty Cycle
2/3
AM83135-015
PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0221 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
©1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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