BU407 [STMICROELECTRONICS]
HIGH CURRENT NPN SILICON TRANSISTOR; 大电流NPN硅晶体管
| 型号： | BU407 |
| 厂家： | 
ST |
| 描述： | HIGH CURRENT NPN SILICON TRANSISTOR |
| 文件： | 总4页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BU407
HIGH CURRENT NPN SILICON TRANSISTOR
■
■
SGS-THOMSON PREFERRED SALESTYPE
NPN TRANSISTOR
APPLICATIONS
■
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The BU407 is a silicon epitaxial planar NPN
transistors in Jedec TO-220 plastic package.
3
2
1
They are fast switching, high voltage devices foe
use in horizontal deflection output stages of
medium and small screens MTV receivers with
110o CRT as monochrome computers terminals.
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEV
VCEO
VEBO
IC
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = -1.5 V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
330
330
150
Unit
V
V
V
V
6
7
A
ICM
ICM
IB
Ptot
Tstg
Tj
Collector Peak Current (repetitive)
Collector Peak Current (tp = 10 ms)
Base Current
Total Dissipation at Tc ≤ 25 C
Storage Temperature
10
15
4
60
A
A
A
W
oC
oC
o
-65 to 150
150
Max. Operating Junction Temperature
1/4
June 1997
BU407
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE =330 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
5
100
1
mA
µA
mA
VCE =200 V
VCE =200 V
Tcase = 100oC
IEBO
VCE(sat)
VBE(sat)
fT
Emitter Cut-off Current VEB = 6 V
(IC = 0)
1
mA
Collector-emitter
IC = 5 A
IB = 0.5 A
1
V
Saturation Voltage
Base-emitter
IC = 5 A
1.2
16
V
Saturation Voltage
Transition-Frequency
IC = 1 A
VCE = 5 V
10
4
MHz
f = 1 MHz
toff
Turn-off Time
IC = 5 A
IBend = 0.5 A
t = 10 ms
0.75
µs
Is/b
Second Breakdown
Collector Current
VCE = 40 V
A
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2/4
BU407
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.40
1.23
2.40
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
A
C
0.181
0.051
0.107
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
L2
Dia.
L5
L9
L7
L6
L4
P011C
3/4
BU407
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
. . .
4/4
相关型号：
BU407-B-TA3-T
Power Bipolar Transistor, 7A I(C), 150V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
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