BULT118D [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | BULT118D |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BULT118D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
■
NPN TRANSISTOR
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
HIGH VOLTAGE CAPABILITY
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
■
■
■
VERY HIGH SWITCHING SPEED
1
2
APPLICATIONS:
3
■
ELECTRONIC BALLASTS FOR
FLUORESCENT LIGHTING
FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
SOT-32
■
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
INTERNAL SCHEMATIC DIAGRAM
It uses a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
The device is designed for use in lighting
applications and low cost switch-mode power
supplies.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
700
V
V
400
9
V
2
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
4
A
IB
1
A
IBM
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
2
45
A
Ptot
Tstg
Tj
W
oC
oC
-65 to 150
150
Max. Operating Junction Temperature
1/7
June 1997
BULT118D
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
2.77
80
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
100
500
µA
µA
VCE = 700 V
IE = 10 mA
IC = 100 mA
Tj = 125 oC
VEBO
Emitter-Base Voltage
9
V
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
L = 25 mH
400
ICEO
Collector-Emitter
Leakage Current
VCE = 400 V
250
µA
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
0.5
1
1.5
V
V
V
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 0.5 A
IC = 1 A
IC = 2 A
IB = 0.1 A
IB = 0.2 A
IB = 0.4 A
1.0
1.2
1.3
V
V
V
hFE
DC Current Gain
IC = 10 mA
IC = 0.5 A
IC = 2 A
VCE = 5 V
VCE = 5 V
VCE = 5 V
10
10
8
50
RESISTIVE LOAD
Rise Time
Storage Time
Fall Time
tr
ts
tf
VCC = 125
IB1 = 0.2 A
V
IC = 1 A
IB2 = -0.2 A
0.4
3.2
0.25
0.7
4.5
0.4
µs
µs
µs
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 1 A
VBE = -5 V
Vcla mp = 300 V
IB1 = 0.2 A
L = 50 mH
ts
tf
0.8
0.16
µs
µs
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
BULT118D
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
BULT118D
Inductive Fall Time
InductiveStorage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/7
BULT118D
Figure 1: Inductive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuits.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
BULT118D
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.040
0.039
0.606
MAX.
0.307
0.445
0.035
0.030
0.106
0.050
0.629
A
B
10.5
0.7
10.8
0.9
b
b1
C
0.49
2.4
0.75
2.7
c1
D
1.0
1.3
15.4
16.0
e
2.2
3.8
0.087
0.150
e3
F
4.15
3
4.65
0.163
0.118
0.183
G
H
3.2
0.126
0.100
2.54
H2
2.15
0.084
H2
0016114
6/7
BULT118D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express
written approvalof SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - Canada- China- France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
. . .
7/7
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