BUT32V_03 [STMICROELECTRONICS]
NPN TRANSISTOR POWER MODULE; NPN晶体管功率模块
| 型号： | BUT32V_03 |
| 厂家： | 
ST |
| 描述： | NPN TRANSISTOR POWER MODULE |
| 文件： | 总7页 (文件大小：370K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUT32V
®
NPN TRANSISTOR POWER MODULE
■
■
■
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■
■
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
LOW INTERNAL PARASITIC INDUCTANCE
INDUSTRIAL APPLICATIONS:
■
■
■
MOTOR CONTROL
SMPS & UPS
DC/DC & DC/AC CONVERTERS
Pin 4 not connected
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Collector-Emitter Voltage (VBE = -5 V)
Value
400
300
7
Unit
VCEV
V
V
V
A
A
A
A
W
VCEO(sus) Collector-Emitter Voltage (IB = 0)
VEBO
IC
ICM
IB
Emitter-Base Voltage (IC = 0)
Collector Current
80
Collector Peak Current (tp = 10 ms)
Base Current
120
16
IBM
Ptot
Visol
Base Peak Current (tp = 10 ms)
24
o
Total Dissipation at Tc = 25 C
250
2500
Insulation Withstand Voltage (RMS) from All
Four Terminals to External Heatsink
Tstg
Tj
Storage Temperature
-55 to 150
150
oC
oC
Max. Operating Junction Temperature
1/7
February 2003
BUT32V
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
0.5
oC/W
oC/W
Rthc-h
Thermal Resistance Case-heatsink With Conductive
Grease Applied
0.05
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = VCEV
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5 Ω)
1
5
mA
mA
o
VCE = VCEV
Tc = 100 C
ICEV
IEBO
Collector Cut-off
Current (VBE = -5)
VCE = VCEV
VCE = VCEV
1
4
mA
mA
o
Tc = 100 C
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(sus)* Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 0.2 A
clamp = 300 V
L = 25 mH
300
V
V
hFE
DC Current Gain
IC = 40 A
VCE = 5 V
16
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 40 A IB = 4 A
IC = 40 A IB = 4 A Tc = 100 C
0.6
1.2
0.9
1.9
V
V
o
VBE(sat)
diC/dt
Base-Emitter
Saturation Voltage
IC = 40 A
IC = 40 A
IB = 4 A
IB = 4 A Tc = 100 C
1.12
1.1
1.3
1.3
V
V
o
Rate of Rise of
VCC = 300 V
RC = 0
120
180
A/µs
On-state Collector
tp = 3 µs
Tc = 100 C
IB1 = 6 A
o
V
V
CE(3 µs) Collector-Emitter
3
6
3
V
V
VCC = 300 V
IB1 = 6 A
RC = 6.2 Ω
Tc = 100 C
o
Dynamic Voltage
CE(5 µs) Collector-Emitter
1.8
VCC = 300 V
IB1 = 6 A
RC = 6.2 Ω
o
Dynamic Voltage
Tc = 100 C
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC = 40 A
VBB = -5 V
Vclamp = 300 V
L = 0.3 mH
VCC = 250 V
RBB = 0.6 Ω
1.9
0.12
0.35
3
0.4
0.7
µs
µs
µs
IB1 = 4 A
Tc = 100 C
o
VCEW
Maximum Collector
Emitter Voltage
Without Snubber
ICWoff = 60 A
VBB = -5 V
L = 42 µH
IB1 = 4 A
VCC = 50 V
RBB = 0.6 Ω
300
V
o
Tc = 125 C
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
BUT32V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUT32V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times Inductive Load
Switching Times Inductive Load Versus
Temperature
4/7
BUT32V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronics switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
BUT32V
ISOTOP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.8
8.9
TYP.
MAX.
12.2
9.1
MIN.
0.465
0.350
0.307
0.029
0.076
1.488
1.240
0.990
0.938
MAX.
0.480
0.358
0.322
0.033
0.080
1.503
1.248
1.003
0.950
A
A1
B
7.8
8.2
C
0.75
1.95
37.8
31.5
25.15
23.85
0.85
2.05
38.2
31.7
25.5
24.15
C2
D
D1
E
E1
E2
G
24.8
0.976
14.9
12.6
3.5
4.1
4.6
4
15.1
12.8
4.3
4.3
5
0.586
0.496
0.137
0.161
0.181
0.157
0.157
1.185
0.594
0.503
1.169
0.169
0.196
0.169
0.173
1.193
G1
G2
F
F1
P
4.3
4.4
30.3
P1
S
4
30.1
P093A
6/7
BUT32V
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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http://www.st.com
7/7
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