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BUZ80A [STMICROELECTRONICS]

N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR; N - CHANNEL 800V - 2.5ohm - 3.8A - TO- 220快速功率MOS晶体管
BUZ80A
型号: BUZ80A
厂家: ST    ST
描述:

N - CHANNEL 800V - 2.5ohm - 3.8A - TO-220 FAST POWER MOS TRANSISTOR
N - CHANNEL 800V - 2.5ohm - 3.8A - TO- 220快速功率MOS晶体管

晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网
文件: 总9页 (文件大小:103K)
中文:  中文翻译
下载:  下载PDF数据表文档文件

相关型号:

BUZ80A-E3044

Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

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INFINEON

BUZ80A-E3045

Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ80A-E3046

Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ80AC67078-S1309-A3

TRANSISTOR TO 220 MOSFET N KANAL

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INFINEON

BUZ80AFI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(197.88 k)

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ETC

BUZ80F

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS(196.99 k)

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ETC

BUZ80FI

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

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STMICROELECTR

BUZ81

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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INFINEON

BUZ81-E3044

Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

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INFINEON

BUZ81-E3045

Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ81-E3046

Power Field-Effect Transistor, 4A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ83

main ratings

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INFINEON

BUZ83A

main ratings

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INFINEON

BUZ84A

TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 6A I(D) | TO-204AA

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ETC

BUZ88

main ratings

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INFINEON

BUZ88A

main ratings

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INFINEON

BUZ90

SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

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INFINEON

BUZ90-E3044

Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 4 PIN

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INFINEON

BUZ90-E3045

Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON

BUZ90-E3046

Power Field-Effect Transistor, 4.5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, 3 PIN

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INFINEON