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EMIF10-LCD01C1 [STMICROELECTRONICS]

10 LINES EMI FILTER AND ESD PROTECTION; 10号线EMI滤波器和ESD保护
EMIF10-LCD01C1
型号： EMIF10-LCD01C1
厂家： ST    ST
描述：

10 LINES EMI FILTER AND ESD PROTECTION
10号线EMI滤波器和ESD保护

LTE
文件： 总7页 (文件大小：114K)
中文：  中文翻译
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EMIF10-LCD01C1  
®
10 LINES EMI FILTER  
AND ESD PROTECTION  
IPAD™  
MAIN PRODUCT CHARACTERISTICS:  
Where EMI filtering in ESD sensitive equipment is  
required :  
■
■
■
■
LCD for Mobile phones  
Computers and printers  
Communication systems  
MCU Boards  
DESCRIPTION  
Flip-Chip  
(25 bumps)  
The EMIF10-LCD01C1 is a 10 lines highly inte-  
grated devices designed to suppress EMI/RFI  
noise in all systems subjected to electromagnetic  
interferences. The EMIF10 flip chip packaging  
means the package size is equal to the die size.  
This filter includes an ESD protection circuitry,  
which prevents the device from destruction when  
subjected to ESD surges up 15kV.  
Figure 1: Pin Configuration (ball side)  
5
3
4
2
1
I5  
I4  
I3  
I2  
I1  
A
B
C
D
E
I10  
I9  
I8  
I7  
I6  
BENEFITS  
GND GND GND GND GND  
■
■
■
■
■
■
EMI symmetrical (I/O) low-pass filter  
High efficiency in EMI filtering  
Very low PCB space consuming: < 7mm  
Coating resin on back side  
Very thin package: 0.69 mm  
High efficiency in ESD suppression on input  
pins (IEC61000-4-2 level 4)  
O10  
O5  
O9  
O4  
O8  
O3  
O7  
O2  
O6  
O1  
2
■
■
High reliability offered by monolithic integration  
High reducing of parasitic elements through  
integration and wafer level packaging.  
Figure 2: Basic Cell Configuration  
Low-pass Filter  
COMPLIES WITH THE FOLLOWING STANDARDS:  
IEC61000-4-2:  
Output  
Input  
Level 4 input pins 15kV (air discharge)  
8kV (contact discharge)  
Level 1 output pins 2kV (air discharge)  
2kV (contact discharge)  
Ri/o = 100Ω  
Cline = 35pF  
GND  
GND  
GND  
MIL STD 833E - Method 3015-6 Class 3  
Table 1: Order Code  
Part Number  
Marking  
EMIF10-LCD01C1  
FL  
September 2004  
REV. 1  
1/7  
EMIF10-LCD01C1  
Table 2: Absolute Maximum Ratings (T  
= 25°C)  
amb  
Symbol  
Parameter  
Value  
125  
Unit  
°C  
T
Junction temperature  
j
T
-40 to + 85  
Operating temperature range  
Storage temperature range  
°C  
op  
T
-55 to +150  
°C  
stg  
Table 3: Electrical Characteristics (T  
= 25°C)  
amb  
Symbol  
Parameter  
Breakdown voltage  
I
V
BR  
IF  
I
Leakage current @ V  
RM  
RM  
V
Stand-off voltage  
Clamping voltage  
Dynamic resistance  
Peak pulse current  
RM  
VF  
V
CL VBR VRM  
V
CL  
V
IRM  
IR  
Rd  
I
PP  
R
IPP  
Series resistance between Input & Output  
I/O  
Cline Input capacitance per line  
Symbol  
Test conditions  
Min.  
Typ.  
Max.  
10  
Unit  
V
V
I
I = 1 mA  
R
6
8
BR  
V
= 3V  
RM  
500  
110  
nA  
Ω
RM  
R
90  
100  
47  
I/O  
Cline  
@ 0V bias  
pF  
Rt / Ft  
Induced rise and fall time 10-90% at 26 MHz fre-  
quency signal V = 1.9 V (Rt / Ft input 1 ns, 50Ω  
impedance generator)  
(1)  
ns  
8
(1) guaranteed by design  
Figure 3: S21(dB) all lines attenuation  
measurement and Aplac simulation  
Figure 4: Analog cross talk measurements  
2/7  
EMIF10-LCD01C1  
Figure 5: ESD response to IEC61000-4-2  
(+15kV air discharge) on one input and on one  
output  
Figure 6: ESD response to IEC61000-4-2 (-15kV  
air discharge) on one input and on one output  
Vin  
Vout  
Figure 7: Line capacitance versus applied  
voltage  
Figure 8: Rise time 10-90% measurements with  
1.9V signal at 26 MHz frequency (50Ω  
generator)  
CLine(pF)  
35  
30  
25  
20  
15  
10  
VLine(V)  
2.0 3.0  
5
0
0.0  
1.0  
4.0  
5.0  
Figure 9: Fall time 10-90% measurements with  
1.9V signal at 26 MHz frequency (50Ω  
generator)  
3/7  
EMIF10-LCD01C1  
Figure 10: Aplac model  
EMIF10-LCD01C1 model  
Ground return  
Figure 11: Aplac parameters  
ZRZ structure  
aplacvar Remif10low 100  
BV = 7  
aplacvar Cemif10flow 17.5pF  
Bumps  
CJO = Cemif10low  
IBV = 1u  
aplacvar Lbump 50pH  
aplacvar Rbump 20m  
aplacvar Cbump 1.5pF  
Bulk  
IKF = 1000  
IS = 10f  
ISR = 100p  
N = 1  
aplacvar Rsub 100m  
Gnd connections  
aplacvar Rgnd 100m  
aplacvar Lgnd 200pH  
aplacvar Cgnd 0.15pF  
M = 0.3333  
RS = 0.015  
VJ = 0.6  
TT = 50n  
Figure 12: Order Code  
EMIF yy  
-
xxx zz Fx  
EMI Filter  
Number of lines  
Information  
x = resistance value (Ohms)  
z = capacitance value / 10(pF)  
or  
3 letters = application  
2 digits = version  
Package  
F = Flip-Chip  
x
= 1: 500µm, Bump = 315µm  
= 2: Leadfree Pitch = 500µm, Bump = 315µm  
= 3: Leadfree Pitch = 400µm, Bump = 250µm  
4/7  
EMIF10-LCD01C1  
Figure 13: FLIP-CHIP Package Mechanical Data  
500µm 50  
695µm 75  
315µm 50  
250µm 40  
2.64mm 50µm  
Figure 14: Foot Print Recommendations  
Figure 15: Marking  
545  
400  
Dot, ST logo  
xx = marking  
z = packaging location  
yww = datecode  
(y = year  
Copper pad Diameter :  
250µm recommended , 300µm max  
ww = week)  
Solder stencil opening : 330µm  
x x z  
Solder mask opening recommendation :  
340µm min for 315µm copper pad diameter  
y
w w  
All dimensions in µm  
5/7  
EMIF10-LCD01C1  
Figure 16: FLIP-CHIP Tape and Reel Specification  
Dot identifying Pin A1 location  
Ø 1.5 +/- 0.1  
4 +/- 0.1  
ST  
ST  
ST  
0.73 +/- 0.05  
4 +/- 0.1  
User direction of unreeling  
All dimensions in mm  
Table 4: Ordering Information  
Part Number  
Marking  
Package  
Flip-Chip  
Weight  
Base qty Delivery mode  
5000 Tape & reel (7”)  
EMIF10-LCD01C1  
FL  
9.3 mg  
Note: Further packing information available in the application notes  
- AN1235: ''Flip-Chip: Package description and recommandations for use''  
- AN1751: "EMI Filters: Recommendations and measurements"  
Table 5: Revision History  
Date  
Revision  
Description of Changes  
Sep-2004  
1
First issue  
6/7  
EMIF10-LCD01C1  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted  
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject  
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not  
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics.  
All other names are the property of their respective owners  
© 2004 STMicroelectronics - All rights reserved  
STMicroelectronics group of companies  
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -  
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America  
www.st.com  
7/7  

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