ESDA25L [STMICROELECTRONICS]

DUAL TRANSIL ARRAY FOR ESD PROTECTION; 双TRANSIL阵列的ESD保护
ESDA25L
型号: ESDA25L
厂家: ST    ST
描述:

DUAL TRANSIL ARRAY FOR ESD PROTECTION
双TRANSIL阵列的ESD保护

瞬态抑制器 二极管 光电二极管 PC 局域网
文件: 总6页 (文件大小:62K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
®
ESDAxxL  
DUAL TRANSIL ARRAY  
FOR ESD PROTECTION  
Application Specific Discretes  
A.S.D.  
APPLICATIONS  
Where transient overvoltage protection in ESD  
sensitive equipment is required, such as :  
- COMPUTERS  
- PRINTERS  
- COMMUNICATION SYSTEMS  
It is particulary recommended for the RS232 I/O  
port protection where the line interface withstands  
only with 2kV ESD surges.  
FEATURES  
SOT23  
2 UNIDIRECTIONAL TRANSIL FUNCTIONS.  
LOW LEAKAGE CURRENT : IR max. < 20µA at  
VBR.  
300 W PEAK PULSE POWER (8/20µs)  
DESCRIPTION  
FUNCTIONAL DIAGRAM  
The ESDAxxL is a dual monolithic voltage  
suppressor designed to protect components which  
are connected to data and transmission lines  
against ESD.  
It clamps the voltage just above the logic level  
supply for positive transients, and to a diode drop  
below ground for negative transients.  
It can also work as bidirectionnal suppressor by  
connecting only pin1 and 2.  
BENEFITS  
High ESD protection level : up to 25 kV.  
High integration.  
Suitable for high density boards.  
COMPLIES WITH THE FOLLOWING STANDARDS :  
IEC61000-4-2 level 4  
MIL STD 883C-Method 3015-6 : class 3.  
(human body model)  
Marchr 2000 - Ed: 4A  
1/6  
ESDAxxL  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25°C)  
Symbol  
Parameter  
Value  
Unit  
VPP  
Electrostatic discharge  
MIL STD 883C - Method 3015-6  
IEC61000-4-2 air discharge  
IEC61000-4-2 contact discharge  
kV  
25  
16  
9
PPP  
Peak pulse power (8/20 µs)  
300  
W
Tstg  
Tj  
Storage temperature range  
Maximum junction temperature  
- 55 to + 150  
150  
°C  
°C  
TL  
Maximum lead temperature for soldering during 10s  
Operating temperature range  
260  
°C  
°C  
Top  
- 40 to + 125  
note 1: Evolution of functional parameters is given by curves.  
ELECTRICAL CHARACTERISTICS (Tamb = 25°C)  
Symbol  
VRM  
VBR  
VCL  
IRM  
Parameter  
Stand-off voltage  
I
I
F
Breakdown voltage  
Clamping voltage  
V
BR  
V
V
F
RM  
Leakage current  
V
I
I
IPP  
Peak pulse current  
Voltage temperature coefficient  
Capacitance  
RM  
αT  
C
1
Rd  
Slope:  
Rd  
Dynamic resistance  
Forward voltage drop  
PP  
VF  
IR  
Types  
VBR  
@
IRM  
@
VRM  
Rd  
typ.  
αT  
max.  
C
VF  
@
IF  
min.  
max.  
max.  
typ.  
max.  
note 1  
mΩ  
note 2 0V bias  
V
V
mA  
1
µA  
V
3
10-4/ C  
pF  
V
mA  
5.3  
5.9  
2
280  
5
220  
1.25  
200  
ESDA5V3L  
ESDA6V1L  
ESDA14V2L  
ESDA25L  
6.1  
14.2  
25  
7.2  
15.8  
30  
1
1
1
20  
5
5.25  
12  
350  
650  
6
140  
90  
1.25  
1.25  
1.2  
200  
200  
10  
10  
10  
1
24  
1000  
50  
note 1 : Square pulse Ipp = 15A, tp=2.5µs.  
note 2 : V  
= αT* (Tamb -25°C) * V  
(25°C)  
BR  
BR  
2/6  
ESDAxxL  
CALCULATION OF THE CLAMPING VOLTAGE  
USE OF THE DYNAMIC RESISTANCE  
The ESDA family has been designed to clamp fast  
spikes like ESD. Generally the PCB designers  
need to calculate easily the clamping voltage VCL.  
This is why we give the dynamic resistance in  
addition to the classical parameters. The voltage  
across the protection cell can be calculated with  
the following formula:  
As the value of the dynamic resistance remains  
stable for a surge duration lower than 20µs, the  
2.5µs rectangular surge is well adapted. In  
addition both rise and fall times are optimized to  
avoid any parasitic phenomenon during the  
measurement of Rd.  
VCL = VBR + Rd IPP  
Where Ipp is the peak current through the ESDA cell.  
DYNAMIC RESISTANCE MEASUREMENT  
The short duration of the ESD has led us to prefer  
a more adapted test wave, as below defined, to the  
classical 8/20µs and 10/1000µs surges.  
I
Ipp  
t
2µs  
tp = 2.5µs  
2.5µs duration measurement wave.  
3/6  
ESDAxxL  
Fig. 1: Peak power dissipation versus initial junc-  
tion temperature.  
Fig. 2: Peak pulse power versus exponential  
pulse duration (Tj initial = 25 °C).  
Ppp[Tj initial]/Ppp[Tj initial=25°C]  
Ppp(W)  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
3000  
1000  
100  
Tj initial(°C)  
tp(µs)  
0.1  
0.0  
10  
1
10  
100  
0
25  
50  
75  
100  
125  
150  
Fig. 3: Clamping voltage versus peak pulse cur-  
rent (Tj initial = 25 °C).  
Rectangular waveform tp = 2.5 µs.  
Fig. 4: Capacitance versus reverse applied volt-  
age (typical values).  
Ipp(A)  
C(pF)  
50.0  
200  
ESDA5V3L  
ESDA6V1L  
ESDA14V2L  
ESDA25L  
F=1MHz  
ESDA5V3L  
Vosc=30mV  
100  
10.0  
1.0  
ESDA6V1L  
50  
ESDA14V2L  
20  
tp=2.5µs  
ESDA25L  
Vcl(V)  
VR(V)  
0.1  
10  
0
5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80  
1
2
5
10  
20  
50  
Fig. 5: Relative variation of leakage current versus  
junction temperature (typical values).  
Fig. 6: Peak forward voltage drop versus peak for-  
ward current (typical values).  
IR[Tj] / IR[Tj=25°C]  
IFM(A)  
200  
5.00  
ESDA5V3L  
Tj=25°C  
ESDA6V1L  
&
ESDA14V2L  
100  
ESDA14V2L  
ESDA6V1L  
1.00  
ESDA25L  
ESDA25L  
10  
0.10  
ESDA5V3L  
Tj(°C)  
VFM(V)  
1
0.01  
25  
50  
75  
100  
125  
0.0  
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
3.5  
4.0  
4/6  
ESDAxxL  
1. ESD protection by the ESDAxxL  
the transient rises above the operating voltage of  
the device, the TVS array becomes a low  
impedance path diverting the transient current to  
ground.  
Electrostatic discharge (ESD) is a major cause of  
failure in electronic systems.  
Transient Voltage Suppressors (TVS) are an ideal  
choice for ESD protection. They are capable of  
clamping the incoming transient to a low enough  
level such that damage to the protected  
semiconductor is prevented.  
The ESDAxxL array is the ideal board level  
protection of ESD sensitive semiconductor  
components.  
The tiny SOT23 package allows design flexibility in  
the design of high density boards where the space  
saving is at a premium. This enables to shorten the  
routing and contributes to hardening againt ESD.  
Surface mount TVS arrays offer the best choice for  
minimal lead inductance.  
They serve as parallel protection elements,  
connected between the signal line to ground. As  
I/O  
I/O  
I/O  
I/O  
ESD  
sensitive  
device  
GND  
2 * ESDAXXL  
2. Circuit Board Layout  
Circuit board layout is a critical design step in the  
suppression of ESD induced transients. The  
following guidelines are recommended :  
All conductive loops, including power and  
ground loops should be minimized  
The ESD transient return path to ground should  
be kept as short as possible.  
The ESDAxxL should be placed as close as pos-  
sible to the input terminals or connectors.  
Ground planes should be used whenever possi-  
ble.  
The path length between the ESD suppressor  
and the protected line should be minimized  
5/6  
ESDAxxL  
ORDER CODE  
ESDA 6V1 L  
ESD ARRAY  
PACKAGE : SOT23 PLASTIC  
VBR min  
PACKAGE MECHANICAL DATA  
SOT23 (Plastic)  
A
E
DIMENSIONS  
REF.  
Millimeters  
Min. Max.  
Inches  
Min.  
Max.  
0.055  
0.004  
0.02  
e
A
A1  
B
0.89  
0
1.4  
0.1  
0.035  
0
D
e1  
B
0.3  
0.51  
0.18  
3.04  
1.05  
2.1  
0.012  
0.003  
0.108  
0.033  
0.067  
0.047  
0.083  
S
c
0.085  
2.75  
0.85  
1.7  
0.007  
0.12  
A1  
D
e
0.041  
0.083  
0.063  
0.108  
L
e1  
E
H
1.2  
1.6  
H
L
2.1  
2.75  
0.6 typ.  
0.024 typ.  
c
S
0.35  
0.65  
0.014  
0.026  
FOOT PRINT (in millimeters)  
MARKING  
0.9  
0.9  
0.035  
0.035  
TYPE  
MARKING  
EL53  
ESDA5V3L  
ESDA6V1L  
ESDA14V2L  
ESDA25L  
1.9  
0.075  
EL61  
mm  
inch  
1.45  
0.037  
EL15  
EL25  
0.9  
0.035  
Packaging: Standard packaging is tape and reel.  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of  
use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by  
implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to  
change without notice. This publication supersedes and replaces all information previously supplied.  
STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap-  
proval of STMicroelectronics.  
The ST logo is a registered trademark of STMicroelectronics  
© 2000 STMicroelectronics - Printed in Italy - All rights reserved.  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia  
Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
6/6  

相关型号:

ESDA25LY

Automotive dual Transil array for ESD protection
STMICROELECTR

ESDA25SC6

Quad Transil array for ESD protection
STMICROELECTR

ESDA25SC6Y

Automotive Quad-line TVS for ESD protection
STMICROELECTR

ESDA25W

QUAL TRANSILO ARRAY FOR ESD PROTECTION
STMICROELECTR

ESDA25W5

QUAL TRANSILO ARRAY FOR ESD PROTECTION
STMICROELECTR

ESDA3302P3

Trans Voltage Suppressor Diode
WEITRON

ESDA4-LFC-LF-T73-1

Trans Voltage Suppressor Diode, 5V V(RWM), Unidirectional, 4 Element, Silicon, LEAD FREE, FLIP CHIP-5
PROTEC

ESDA5V3

Dual transil arr ay for ESD protection
WEITRON

ESDA5V3L

DUAL TRANSIL ARRAY FOR ESD PROTECTION
STMICROELECTR

ESDA5V3LY

Automotive dual Transil&#8482; array for ESD protection
STMICROELECTR

ESDA5V3SC5

QUAD TRANSIL ARRAY FOR ESD PROTECTION
STMICROELECTR

ESDA5V3SC5_07

Quad Transil array for ESD protection
STMICROELECTR