HCF40106M013TR [STMICROELECTRONICS]

HEX SCHMITT TRIGGERS; HEX施密特触发器
HCF40106M013TR
型号: HCF40106M013TR
厂家: ST    ST
描述:

HEX SCHMITT TRIGGERS
HEX施密特触发器

栅极 触发器 逻辑集成电路 光电二极管 PC
文件: 总13页 (文件大小:307K)
中文:  中文翻译
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HCC40106B  
HCF40106B  
HEX SCHMITT TRIGGERS  
.
.
SCHMITT-TRIGGER ACTION WITH NO EX-  
TERNAL COMPONENTS  
HYSTERESIS VOLTAGE (TYP.) 0.9V AT VDD  
=
5V, 2.3V AT VDD = 10V AND 3.5V AT VDD = 15V  
NOISE IMMUNITY GREATER THAN 50%  
NO LIMIT ON INPUT RISE AND FALL TIME  
LOW VDD TO VSS CURRENT DURING SLOW  
INPUT RAMP  
STANDARDIZED SYMMETRICAL OUTPUT  
CHARACTERISTICS  
QUIESCENT CURRENT SPECIFIED AT 20V  
FOR HCC DEVICE  
5V, 10V, AND 15V PARAMETRIC RATINGS  
INPUT CURRENT OF 100nA AT 18V AND 25°C  
FOR HCC DEVICE  
100% TESTED FOR QUIESCENT CURRENT  
MEETS ALL REQUIREMENTS OF JEDEC  
TENTATIVE STANDARD N° 13A, ”STANDARD  
SPECIFICATIONS FOR DESCRIPTION OF ”B”  
SERIES CMOS DEVICES”  
.
.
.
EY  
F
(Plastic Package)  
(Ceramic Frit Seal Package)  
.
.
.
.
C1  
M1  
(Plastic Chip Carrier)  
(Micro Package)  
ORDER CODES :  
.
.
HCC40106BF  
HCF40106BM1  
HCF40106BEY HCF40106BC1  
PIN CONNECTIONS  
DESCRIPTION  
The HCC40106B (extended temperature range)  
and HCF40106B (intermediate temperature range)  
are monolithic integrated circuits, available in 14-  
lead dual in-line plastic or ceramic package and  
plastic micropackage.  
The HCC/HCF40106B consists of six Schmitt-trig-  
ger circuits. Each circuit functions as an inverter with  
Schmitt-trigger action on the input. The trigger swit-  
ches at different points for positive and negative-  
going signals. The difference between the  
positive-going voltage (VP) and the negative-going  
voltage (VN) is defined as hysteresis voltage (VH).  
June 1989  
1/13  
HCC/HCF40106B  
FUNCTIONAL DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
VDD  
*
Supply Voltage : HCC Types  
HCF Types  
– 0.5 to + 20  
– 0.5 to + 18  
V
V
Vi  
II  
Input Voltage  
– 0.5 to VDD + 0.5  
V
DC Input Current (any one input)  
± 10  
mA  
mW  
Pto t  
Total Power Dissipation (per package)  
Dissipation per Output Transistor  
200  
for To p = Full Package-temperature Range  
100  
mW  
Top  
Operating Temperature : HCC Types  
HCF Types  
– 55 to + 125  
– 40 to + 85  
°C  
°C  
Tstg  
Storage Temperature  
– 65 to + 150  
°C  
Stresses above those listed under ”Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating  
only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this  
specification is not implied. Exposure to absolute maximum rating conditions for external periods may affect device reliability.  
* All voltage values are referred to VSS pin voltage.  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Supply Voltage : HCC Types  
HCF Types  
Value  
Unit  
VDD  
3 to 18  
3 to 15  
V
V
VI  
Input Voltage  
0 to VDD  
V
To p  
Operating Temperature : HCC Types  
HCF Types  
– 55 to + 125  
– 40 to + 85  
°C  
°C  
2/13  
HCC/HCF40106B  
LOGIC DIAGRAM  
STATIC ELECTRICAL CHARACTERISTICS (over recommended operating conditions)  
Test Conditions  
Value  
VI  
(V)  
VO  
(V)  
|IO  
(µA) (V)  
|
VD D  
T Lo w  
*
25°C  
T High*  
Symbol  
Parameter  
Quiescent  
Unit  
Min. Max. Min. Typ. Max. Min. Max.  
IL  
0/ 5  
0/10  
0/15  
0/20  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
5/10  
10/0  
15/0  
5
1
2
0.02  
0.02  
0.02  
0.04  
0.02  
0.02  
0.02  
1
2
30  
60  
Current  
HCC  
10  
15  
20  
5
Types  
4
4
120  
600  
30  
µA  
20  
4
20  
4
HCF  
Types  
10  
15  
8
8
60  
16  
16  
120  
VOH  
VOL  
VP  
Output High  
Voltage  
< 1  
< 1  
< 1  
< 1  
< 1  
< 1  
5
4.95  
4.95  
9.95  
4.95  
9.95  
V
V
10 9.95  
15 14.95  
14.95  
14.95  
Output Low  
Voltage  
5
0.05  
0.05  
0.05  
3.6  
0.05  
0.05  
0.05  
3.6  
0.05  
0.05  
0.05  
3.6  
10  
15  
Positive Trigger  
Threshold  
Voltage  
5
2.2  
4.6  
2.2  
4.6  
2.9  
5.9  
8.8  
1.9  
3.9  
5.8  
0.9  
2.3  
3.5  
2.2  
4.6  
10  
15  
5
7.1  
7.1  
7.1  
V
V
V
6.8 10.8 6.8  
10.8 6.8 10.8  
VN  
Negative Trigger  
Threshold  
Voltage  
0.9  
2.5  
4
2.8  
5.2  
7.4  
1.6  
3.4  
5
0.9  
2.5  
4
2.8  
5.2  
7.4  
1.6  
3.4  
5
0.9  
2.5  
4
2.8  
5.2  
7.4  
1.6  
3.4  
10  
15  
5
VH  
Hysteresis  
Voltage  
0.3  
1.2  
1.6  
0.3  
1.2  
1.6  
0.3  
1.2  
1.6  
10  
15  
* TLow= – 55°C for HCC device : – 40°C for HCF device.  
* THigh= + 125°C for HCC device : + 85°C for HCF device.  
3/13  
HCC/HCF40106B  
STATIC ELECTRICAL CHARACTERISTICS (continued)  
Test Conditions  
Value  
VI  
(V)  
VO  
(V)  
|IO  
(µA) (V)  
|
VD D  
T Lo w  
*
25°C  
T High*  
Symbol  
Parameter  
Output  
Unit  
Min. Max. Min. Typ. Max. Min. Max.  
IOH  
0/ 5  
0/ 5  
0/10  
0/15  
0/ 5  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
0/ 5  
0/10  
0/15  
2.5  
4.6  
9.5  
13.5  
2.5  
4.6  
9.5  
13.5  
0.4  
0.5  
1.6  
0.4  
0.5  
1.5  
5
5
– 2  
– 1.6 – 3.2  
– 0.51 – 1  
– 1.3 – 2.6  
– 3.4 – 6.8  
– 1.36 – 3.2  
– 0.44 – 1  
– 1.1 – 2.6  
– 3.0 – 6.8  
– 1.15  
– 0.36  
– 0.9  
– 2.4  
– 1.1  
– 0.36  
– 0.9  
– 2.4  
0.36  
Drive  
Current  
HCC  
Types  
– 0.64  
10 – 1.6  
15 – 4.2  
mA  
5
5
– 1.53  
– 0.52  
HCF  
Types  
10 – 1.3  
15 – 3.6  
IOL  
Output Sink  
Current  
5
0.64  
1.6  
0.51  
1.3  
1
HCC  
Types  
10  
15  
5
2.6  
6.8  
1
0.9  
mA  
4.2  
3.4  
2.4  
0.52  
1.3  
0.44  
1.1  
0.36  
HCF  
Types  
10  
15  
2.6  
6.8  
0.9  
3.6  
3.0  
2.9  
I
IH, IIL** Input  
HCC  
Types  
0/18  
18  
± 0.1  
± 0.3  
±105 ± 0.1  
± 1  
± 1  
Leakage  
Current  
Any Input  
µA  
15  
±105 ± 0.3  
HCF  
Types  
0/15  
CI  
Input Capacitance  
Any Input  
5
7.5  
p
* TLow = – 55°C for HCC device : – 40°C for HCF device.  
* THigh = + 125°C for HCC device : + 85°C for HCF device.  
DYNAMIC ELECTRICAL CHARACTERISTICS (Tamb = 25°C, CL = 50pF, RL = 200k,  
typical temperature coefficient for all VDD values is 0.3%/°C, all input rise and fall time = 20ns)  
Test Conditions  
Value  
Symbol  
Parameter  
Unit  
V D D (V) Min. Typ. Max.  
tPL H  
tPHL  
,
Propagation Delay Time  
5
140  
70  
280  
140  
120  
200  
100  
80  
ns  
10  
15  
5
60  
tTHL  
tTLH  
,
Transition Time  
100  
50  
ns  
10  
15  
40  
4/13  
HCC/HCF40106B  
HYSTERESIS DEFINITION, CHARACTERISTICS AND TEST SETUP  
(a) Definition of VP, VN and VH. (b) Transfer Characteristic of 1 of 6 gates.  
(c) Test Setup.  
Input and Output Characteristics.  
Typical Current Voltage Transfer Characteristics, and Test Circuit.  
5/13  
HCC/HCF40106B  
HYSTERESIS DEFINITION, CHARACTERISTICS AND TEST SETUP  
Typical Voltage Transfer Characteristics vs. Temperature, and Test Circuit.  
Typical Transition Time vs. Load Capacitance.  
Output Low (sink) Current Characteristics.  
Output High (source) Current Characteristics.  
Typical Propagation Delay Time vs. Load Capacit-  
ance.  
6/13  
HCC/HCF40106B  
Typical Trigger Threshold Voltage vs. Supply  
Voltage .  
Typical per Cent Hysteresis vs. Supply Voltage.  
Typical Power Dissipation per Trigger vs. Input  
Frequency.  
Typical Power Dissipation per Trigger vs. Input  
Frequency.  
TYPICAL APPLICATIONS  
ASTABLE MULTIVIBRATOR.  
MONOSTABLE MULTIVIBRATOR.  
7/13  
HCC/HCF40106B  
TYPICAL APPLICATIONS (continued)  
WAVE SHAPER.  
TEST CIRCUITS  
Quiescent Device Current.  
Dynamic Power Dissipation.  
Input Current .  
8/13  
HCC/HCF40106B  
Plastic DIP14 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
0.51  
1.39  
TYP.  
MAX.  
MIN.  
0.020  
0.055  
TYP.  
MAX.  
a1  
B
b
1.65  
0.065  
0.5  
0.020  
0.010  
b1  
D
E
e
0.25  
20  
0.787  
8.5  
2.54  
15.24  
0.335  
0.100  
0.600  
e3  
F
7.1  
5.1  
0.280  
0.201  
I
L
3.3  
0.130  
Z
1.27  
2.54  
0.050  
0.100  
P001A  
9/13  
HCC/HCF40106B  
Ceramic DIP14/1 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
20  
MIN.  
MAX.  
0.787  
0.276  
A
B
7.0  
D
E
3.3  
0.130  
0.600  
0.38  
0.015  
e3  
F
15.24  
2.29  
0.4  
2.79  
0.55  
1.52  
0.31  
2.54  
10.3  
8.05  
5.08  
0.090  
0.016  
0.046  
0.009  
0.060  
0.110  
0.022  
0.060  
0.012  
0.100  
0.406  
0.317  
0.200  
G
H
L
1.17  
0.22  
1.52  
M
N
P
7.8  
0.307  
Q
P053C  
10/13  
HCC/HCF40106B  
SO14 MECHANICAL DATA  
mm  
inch  
DIM.  
MIN.  
TYP.  
MAX.  
1.75  
0.2  
MIN.  
TYP.  
MAX.  
0.068  
0.007  
0.064  
0.018  
0.010  
A
a1  
a2  
b
0.1  
0.003  
1.65  
0.46  
0.25  
0.35  
0.19  
0.013  
0.007  
b1  
C
0.5  
0.019  
c1  
D
45° (typ.)  
8.55  
5.8  
8.75  
6.2  
0.336  
0.228  
0.344  
0.244  
E
e
1.27  
7.62  
0.050  
0.300  
e3  
F
3.8  
4.6  
0.5  
4.0  
5.3  
0.149  
0.181  
0.019  
0.157  
0.208  
0.050  
0.026  
G
L
1.27  
0.68  
M
S
8° (max.)  
P013G  
11/13  
HCC/HCF40106B  
PLCC20 MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
TYP.  
MAX.  
10.03  
9.04  
MIN.  
0.385  
0.350  
0.165  
MAX.  
0.395  
0.356  
0.180  
A
B
9.78  
8.89  
4.2  
D
4.57  
d1  
d2  
E
2.54  
0.56  
0.100  
0.022  
7.37  
8.38  
0.290  
0.330  
0.004  
e
1.27  
5.08  
0.38  
0.050  
0.200  
0.015  
e3  
F
G
0.101  
M
M1  
1.27  
1.14  
0.050  
0.045  
P027A  
12/13  
HCC/HCF40106B  
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No  
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned  
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.  
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life support devices or systems without express  
written approval of SGS-THOMSON Microelectonics.  
1994 SGS-THOMSON Microelectronics - All Rights Reserved  
SGS-THOMSON Microelectronics GROUP OF COMPANIES  
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -  
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A  
13/13  

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