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HCF40107B_02 [STMICROELECTRONICS]

DUAL 2-INPUT NAND BUFFER/DRIVER; 双2输入与非缓冲器/驱动器
HCF40107B_02
型号： HCF40107B_02
厂家： ST    ST
描述：

DUAL 2-INPUT NAND BUFFER/DRIVER
双2输入与非缓冲器/驱动器

驱动器 输入元件
文件： 总11页 (文件大小：617K)
中文：  中文翻译
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HCF40107B  
DUAL 2-INPUT NAND BUFFER/DRIVER  
■
32 TIMES STANDARD B-SERIES OUTPUT  
CURRENT DRIVE SINKING CAPABILITY -  
136 mA TYP. AT V = 10V, V = 1V  
DD  
DS  
■
■
■
QUIESCENT CURRENT SPECIF. UP TO 20V  
5V, 10V AND 15V PARAMETRIC RATINGS  
INPUT LEAKAGE CURRENT  
DIP  
SOP  
I = 100nA (MAX) AT V = 18V T = 25°C  
I
DD  
A
■
■
100% TESTED FOR QUIESCENT CURRENT  
MEETS ALL REQUIREMENTS OF JEDEC  
JESD13B "STANDARD SPECIFICATIONS  
FOR DESCRIPTION OF B SERIES CMOS  
DEVICES"  
ORDER CODES  
PACKAGE  
TUBE  
T & R  
DIP  
HCF40107BEY  
HCF40107BM1  
SOP  
HCF40107M013TR  
DESCRIPTION  
HCF40107B is a monolithic integrated circuit  
fabricated in Metal Oxide Semiconductor  
technology available in DIP and SOP packages.  
HCF40107B is a dual 2-input NAND buffer/driver  
containing two independent 2-input NAND buffers  
with open-drain single n-channel transistor  
outputs. This device features  
a
wired-OR  
capability and high output sink current capability  
(136 mA typ. at V = 10V, V = 1V).  
DD  
DS  
PIN CONNECTION  
October 2002  
1/11  
HCF40107B  
INPUT EQUIVALENT CIRCUIT  
PIN DESCRIPTION  
PIN No  
SYMBOL  
NAME AND FUNCTION  
2, 1, 7, 6  
A, B, D, E Input  
3, 5  
4
C,F  
Outputs  
V
Negative Supply Voltage  
Positive Supply Voltage  
SS  
V
8
DD  
FUNCTIONAL DIAGRAM  
TRUTH TABLE  
A
B
C
#
L
H
L
L
L
H*  
Z
#
H*  
H*  
L
Z
#
H
H
Z
H
* : Requires external and pull-up resistor (R ) to V  
.
L
DD  
# : Without pull-up resistor (3-state).  
2/11  
HCF40107B  
LOGIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
DC Input Voltage  
DC Input Current  
-0.5 to +22  
V
V
DD  
V
-0.5 to V + 0.5  
I
DD  
I
± 10  
200  
mA  
mW  
mW  
°C  
I
P
Power Dissipation per Package  
Power Dissipation per Output Transistor  
Operating Temperature  
D
100  
T
-55 to +125  
op  
T
Storage Temperature  
-65 to +150  
°C  
stg  
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is  
not implied.  
All voltage values are referred to V pin voltage.  
SS  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Value  
Unit  
V
Supply Voltage  
3 to 20  
0 to V  
V
V
DD  
V
Input Voltage  
I
DD  
T
Operating Temperature  
-55 to 125  
°C  
op  
3/11  
HCF40107B  
DC SPECIFICATIONS  
Test Condition  
|I | V  
DD  
Value  
T
= 25°C  
Symbol  
Parameter  
-40 to 85°C -55 to 125°C Unit  
A
V
V
I
O
O
(V)  
(V)  
(µA) (V)  
Min. Typ. Max. Min. Max. Min. Max.  
I
Quiescent Current  
0/5  
5
0.02  
0.02  
0.02  
5
150  
300  
30  
60  
L
0/10  
0/15  
0/20  
10  
15  
20  
10  
20  
µA  
600  
120  
600  
0.04 100  
3000  
V
High Level Input  
Voltage  
0.5/4.5  
1/9  
<1  
<1  
5
3.5  
7
3.5  
7
3.5  
7
IH**  
10  
15  
5
V
V
1.5/13.5 <1  
11  
11  
11  
V
Low Level Input  
Voltage  
4.5/0.5  
9/1  
<1  
<1  
1.5  
1.5  
3
1.5  
3
IL**  
10  
15  
5
3
13.5/1.5 <1  
4
4
4
I
Output Sink  
Current  
5
0.4  
1
21  
44  
49  
89  
66  
32  
16  
30  
37  
68  
50  
12  
25  
28  
51  
38  
OL  
5
5
68  
10  
10  
15  
0.5  
1
10  
10  
15  
74  
mA  
136  
0.5  
100  
I
Output Drive  
Current  
OH  
No Internal Pull-up Device  
mA  
I
I
Input Leakage  
Current  
IH, IL  
-5  
0/18  
0/18  
Any Input  
18  
18  
18  
±0.1  
±0.1  
±1  
µA  
±10  
I
I
3-State Output  
Leakage Current  
OH, OL  
***  
-4  
2
2
20  
µA  
±10  
C
Input Capacitance  
Any Input  
5
7.5  
pF  
pF  
I
C
Output  
Capacitance  
O
Any Output  
30  
The Noise Margin for both "1" and "0" level is: 1V min. with V =5V, 2V min. with V =10V, 2.5V min. with V =15V  
DD  
DD  
DD  
** Measured with external pull-up resistor, R = 10kΩ to V  
.
L
DD  
*** Forced output disabled.  
DYNAMIC ELECTRICAL CHARACTERISTICS (T  
= 25°C, C = 50pF, R = 200KΩ, t = t = 20 ns)  
amb  
L
L
r
f
Test Condition  
Value (*)  
Unit  
Symbol  
Parameter  
V
(V)  
Min. Typ. Max.  
DD  
t
t
Propagation Delay Time  
High to Low  
5
100  
45  
30  
100  
60  
50  
50  
20  
10  
50  
35  
25  
200  
90  
PHL PLH  
R * = 120Ω  
10  
15  
5
ns  
ns  
ns  
ns  
L
60  
Low to High  
200  
120  
100  
100  
40  
R * = 120Ω  
10  
15  
5
L
t
t
Transition Time  
High to Low  
THL TLH  
R * = 120Ω  
10  
15  
5
L
20  
Low to High  
100  
70  
R * = 120Ω  
10  
15  
L
50  
(*) R is external pull-up resistor to V  
L
DD.  
4/11  
HCF40107B  
TYPICAL APPLICATIONS  
Line-driver Circuit.  
A 2.2-watt Incandescent Lamp-driver Circuit.  
Solenoid Driver Circuit  
Interface of 40107B with Triac, with COS/MOS  
Component and Triac isolated.  
Direct Dc Driver Interface of 40107B with a Triac.  
5/11  
HCF40107B  
Multiplexed Led Circuit  
6/11  
HCF40107B  
Motor-controller Circuit  
Led Driver Circuit  
A
B
MOTOR FUNCTION  
INHIBIT  
ENABLE  
OUTPUT  
L
H
H
L
L
L
OFF  
L
H
L
L
L
OFF  
OFF  
OFF  
ON  
COUNTER CLOCKWISE  
AS PREVIOUS STATE  
CLOCKWISE  
H
H
H
H
H
L
H
AS PREVIOUS STATE  
TEST CIRCUIT  
C
R
R
= 50pF or equivalent (includes jig and probe capacitance)  
L
L
T
= 200KΩ  
= Z of pulse generator (typically 50Ω)  
OUT  
7/11  
HCF40107B  
WAVEFORM : PROPAGATION DELAY TIMES (f=1MHz; 50% duty cycle)  
8/11  
HCF40107B  
Plastic DIP-8 MECHANICAL DATA  
mm.  
inch  
TYP.  
0.130  
DIM.  
MIN.  
TYP  
MAX.  
MIN.  
MAX.  
A
a1  
B
3.3  
0.7  
1.39  
0.91  
0.028  
0.055  
0.036  
1.65  
1.04  
0.065  
0.041  
B1  
b
0.5  
0.020  
b1  
D
E
0.38  
0.5  
9.8  
0.015  
0.020  
0.386  
8.8  
0.346  
0.100  
0.300  
0.300  
e
2.54  
7.62  
7.62  
e3  
e4  
F
7.1  
4.8  
0.280  
0.189  
I
L
3.3  
0.130  
Z
0.44  
1.6  
0.017  
0.063  
P001F  
9/11  
HCF40107B  
SO-8 MECHANICAL DATA  
mm.  
inch  
TYP.  
DIM.  
MIN.  
TYP  
MAX.  
1.75  
0.25  
1.65  
0.85  
0.48  
0.25  
0.5  
MIN.  
MAX.  
0.068  
0.009  
0.064  
0.033  
0.018  
0.010  
0.019  
A
a1  
a2  
a3  
b
0.1  
0.003  
0.65  
0.35  
0.19  
0.25  
0.025  
0.013  
0.007  
0.010  
b1  
C
c1  
D
45˚ (typ.)  
4.8  
5.8  
5.0  
6.2  
0.189  
0.228  
0.196  
0.244  
E
e
1.27  
3.81  
0.050  
0.150  
e3  
F
3.8  
0.4  
4.0  
1.27  
0.6  
0.149  
0.015  
0.157  
0.050  
0.023  
L
M
S
˚ (max.)  
8
0016023  
10/11  
HCF40107B  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the  
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from  
its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications  
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information  
previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or  
systems without express written approval of STMicroelectronics.  
© The ST logo is a registered trademark of STMicroelectronics  
© 2002 STMicroelectronics - Printed in Italy - All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
© http://www.st.com  
11/11  

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