ITA25B3 [STMICROELECTRONICS]
BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION; 双向TRANSILTM数组，数据线保护
| 型号： | ITA25B3 |
| 厂家： | 
ST |
| 描述： | BIDIRECTIONAL TRANSILTM ARRAY FOR DATALINE PROTECTION |
| 文件： | 总6页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ITA6V5B3 / ITA10B3
ITA18B3 / ITA25B3
BIDIRECTIONAL TRANSILTM ARRAY
FOR DATALINE PROTECTION
Application Specific Discretes
TM
A.S.D.
APPLICATIONS
Differential data transmission lines protection:
- RS-232
- RS-423
- RS-422
- RS-485
FEATURES
HIGH SURGE CAPABILITY TRANSIL ARRAY
I
PP = 40 A (8/20µs)
PEAK PULSE POWER : 300 W (8/20µs)
SEPARATEDINPUT-OUTPUT
UPTO 9 BIDIRECTIONALTRANSIL FUNCTIONS
SO20
LOWCLAMPINGFACTOR(VCL / VBR) AT HIGH
CURRENT LEVEL
LOW LEAKAGE CURRENT
ESD PROTECTION UP TO 15kV
FUNCTIONAL DIAGRAM
DESCRIPTION
Transil diode arrays provide high overvoltage
protectionby clamping action. Their instantaneous
response to transient overvoltages makes them
particularly suited to protect voltage sensitive
devicessuch as MOS Technologyand low voltage
suppliedIC’s.
The ITA series allies high surge capability against
energetic pulses with high voltage performance
against ESD.
The separated input/output configuration of the
device ensures improved protection against very
fast transient overvoltage like ESD by elimination
of the spikes induced by parasitic inductances
created by external wiring.
COMPLIESWITHTHE FOLLOWINGSTANDARDS :
IEC 1000-4-2 : level 4
IEC 1000-4-4 : level 4
IEC 1000-4-5 : level 2
MIL STD 883C - Method3015-6 : class 3
(human body model)
January 1998 Ed: 2
1/6
ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
ABSOLUTE MAXIMUM RATINGS
Symbol
(Tamb = 25°C)
Parameter
Value
Unit
µ
PPP
Peak pulse power dissipation (8/20 s)
Tj initial = Tamb
Tj initial = Tamb
300
W
(see note 1)
IPP
I2t
Peak pulse current (8/20µs) (see note 1)
40
A
Wire I2t value (see note 1)
0.6
A2s
°
C
°C
Tstg
Tj
Storage temperaturerange
Maximum operating junction temperature
- 55 to + 150
125
TL
Maximum lead temperaturefor soldering during 10s
260
°C
Note 1 : For surges greater than the specified maximum
value, the I/O will first present a short-circuit and after an
open circuit caused by the wire melting.
%I
pp
8
s
100
50
Pulse wave form 8/20
s
t
0
20
s
ELECTRICALCHARACTERISTICS (Tamb = 25°C)
Symbol
VRM
VBR
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current @ V
Peak pulse current
VCL
RM
IRM
IPP
α
T
Voltage temperaturecoefficient
Junction capacitance
C
Types
IRM
@
VRM
VBR
min.
note 2
V
@
IR
VCL
@
IPP
VCL
max.
@
IPP
T
C
α
max.
8/20µs
8/20µs
max.
max.
note 3
pF
note 2
V
note 2
V
A
V
5
mA
1
A
A
10-4/ C
µ
°
10
4
6.5
9.5
10
11
25
4
8
1100
ITA6V5B3
ITA10B3
ITA18B3
ITA25B3
8
10
18
25
1
1
1
13
21
31
10
10
10
17
26
36
25
25
25
800
500
420
4
15
24
9
4
12
Note 2 : Between I/O pin and ground.
Note 3 : Between two input Pins at 0V Bias.
Preferred types in bold.
2/6
ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3
Fig. 1 :
exponentialpulse duration.
Typical peak pulse power versus
Fig. 2 : Clamping voltage versus peak pulse
current (exponentialwaveform 8/20 µs).
P
(W)
P
P
1E+04
1E+03
T
initial = 25 oC
j
ITA25B3
ITA18B3
ITA10B3
ITA6V5B3
1E+02
1E+01
t
(ms) expo
P
1E-03
1E-02
1E-01
1E+00 1E+01 1E+02
Fig. 3 :
Fig. 4 :
Junction capacitance versus reverse
applied voltage for one input/output (typical
values).
Peak current IDC inducing open circuit of
the wire for one input/outputversus pulse duration
(typical values).
I
(A)
DC
1E+03
1E+02
exponential waveform
1E+01
1E+00
t
(ms)
1E+01
1E-02
1E-01
1E+00
Fig. 5 : Relative variation of leakage current
versus junction temperature
3/6
ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
APPLICATION INFORMATION
Types
Maximum differentialvoltage
between two input pins at 25°C
+ / - 3.5 V
+ / - 5.0 V
+ / - 9.0 V
+ / - 12.5 V
ITA6V5B3
ITA10B3
ITA18B3
ITA25B3
This monolithic Transil Array is based on 10
unidirectionalTransilswith a commoncathode and
can be configurated to offer up to 9 bidirectional
functions. This imposes a maximum differential
voltage between 2 inputpins (see opposite table).
Typical application: RS232 junction.
TX
RX
RTS
CTS
DTR
DSR
CARRIER DET.
AUX
GND
4/6
ITA6V5B3 / ITA10B3 / ITA18B3 /ITA25B3
APPLICATION NOTICE
Design advantage of ITAxxxB3used with 4-point structure.
The ITAxxxB3 has been designed with a 4-point structure (separated Input/output)in order to efficiently
protect against disturbanceswith very high di/dt rates, such as ESD.
The purpose of this 4-point structureis to eliminate theovervoltageintroducedby the parasiticinductances
of the wiring (Ldi/dt).
Efficient protection depends not only on the component itself, but also on the circuit layout.The drawing
given in figure shows the layout to be used in order to take advantage of the 4-point structure of the
ITAxxxB3.
With this layout, each line to be protectedpasses through the protection device.
In this way, it realizes an interface between the data line and the circuit to be protected, guaranteeing an
isolation between its inputs and outputs.
The 4 - point structure layout.
ORDER CODE
ITA 25 B 3 RL
PACKAGING:
RL = Tapeand reel.
= Tube.
INTEGRATED
TRANSIL ARRAY
PACKAGE : SO20PLASTIC
VBR min
BIDIRECTIONAL
5/6
ITA6V5B3 / ITA10B3 / ITA18B3 / ITA25B3
MARKING
TYPE
ITA6V5B3
ITA10B3
ITA18B3
ITA25B3
MARKING
ITA6V5B2
ITA10B3
ITA18B3
ITA25B3
PACKAGE MECHANICAL DATA
SO20 (Plastic)
DIMENSIONS
Millimetres Inches
Min. Typ. Max. Min. Typ. Max.
REF.
A
A1
B
C
D
E
e
2.65
0.104
0.008
0.020
0.013
0.512
0.299
0.10
0.33
0.23
12.6
7.40
0.20 0.004
0.51 0.013
0.32 0.009
13.0 0.484
7.60 0.291
1.27
0.50
0.050
0.020
H
h
10.0
0.50
10.65 0.394
0.419
0.050
L
1.27 0.020
°
8 (max)
K
Packaging: standardpackagingis tape and reel.
Weight : 0.55g.
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No
license is granted by implication or otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics.Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-
THOMSON Microelectronics products are not authorized for useas critical components in life support devices or systems withoutexpress writ-
ten approval of SGS-THOMSON Microelectronics.
1998 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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