L6221C [STMICROELECTRONICS]
QUAD DARLINGTON SWITCH; QUAD达林顿开关管型号: | L6221C |
厂家: | ST |
描述: | QUAD DARLINGTON SWITCH |
文件: | 总15页 (文件大小:183K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
L6221C
L6221CN/CD
QUAD DARLINGTON SWITCH
.
FOUR NON INVERTING INPUTS WITH
ENABLE
OUTPUT VOLTAGE UP TO 60 V
OUTPUT CURRENT UP TO 1.8 A
VERY LOW SATURATION VOLTAGE
TTL COMPATIBLE INPUTS
.
.
.
.
.
Multiwatt15
INTEGRAL FAST RECIRCULATION DIODES
Powerdip 12 + 2 + 2
SO16 + 2 + 2
DESCRIPTION
The L6221 monolithicquad darlington switch is de-
signedforhighcurrent,high voltageswitchingappli-
cations. Each of the four switches is controlled by a
logic input and all four are controlled by a common
enableinput.AllinputsareTTL-compatiblefordirect
connectionto logic circuits.
ORDERING NUMBERS :L6221C (Powerdip 12+2+2)
L6221CN (Multiwatt 15 )
L6221CD (SO16+2+2)
outputsof the same device may be paralleled.
Three versions are available : theL6221Cmounted
ina Powerdip12+ 2 + 2 packageand the L6221CN
mounted in a 15--lead Multiwatt package, the
L6221CDin SO16+2+2package.
Eachswitch consistsofan open-collectordarlington
transistorplus a fastdiodeforswitchingapplications
withinductivedevice loads. The emittersof thefour-
switches are commoned.Any numberof inputsand
BLOCK DIAGRAM
May 1997
1/15
L6221C-L6221CN-L6221CD
THERMAL DATA
Symbol
Parameter
SO20
Powerdip Multiwatt15 Unit
Rth j-pins
Rth j-case
Rth j-amb
Thermal Resistance Junction-pins
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max.
Max.
Max.
17
–
80
14
–
80
–
3
35
C/W
°
°C/W
C/W
°
PIN CONNECTIONS (top views)
OUT4
1
2
3
4
5
6
7
8
9
20
19
18
17
16
15
14
13
12
11
IN4
CLAMPB
N.C.
IN3
N.C.
ENABLE
GND
GND
VS
OUT3
GND
GND
OUT2
N.C.
N.C.
IN2
CLAMPA
OUT1
10
IN1
D95IN231
L6221C (Powerdip)
L6221CD (SO20)
L6221CN (Multiwatt-15)
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L6221C-L6221CN-L6221CD
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
60
Unit
V
VO
VS
Output Voltage
Logic Supply Voltage
7
V
VIN , VEN Input Voltage, Enable Voltage
VS
IC
IC
IC
Continuous Colllector Current (for each channel)
1.8
1.2
A
A
for L6221CD
Collector Peak Current (repetitive, duty cycle = 10% ton = 5ms)
for L6221CD
2.5
1.7
A
A
3.2
2.2
A
A
Collector Peak Current (non repetitive, t = 10 s)
µ
for L6221CD
Top
Tstg
Isub
Ptot
Operating Temperature Range (junction)
Storage Temperature Range
Output Substrate Current
-40 to +150
-55 to +150
350
C
C
°
°
mA
Total Power Dissipation
4.3
20
3.5
1
2.3
1
W
W
W
W
W
W
at Tpins = 90 C (powerdip)
°
at Tcase = 90 C (multiwatt)
°
at Tcase = 90 C (SO20)
°
at Tamb = 70°C (powerdip)
at Tamb = 70 C (multiwatt)
°
at Tamb = 70°C (SO20)
TRUTH TABLE
Enable
Input
Power Out
H
H
L
H
L
X
ON
OFF
OFF
For each input : H = High level
L = Low level
X = Don’t care
PIN FUNCTIONS (see block diagram)
Name
Function
IN 1
Input to Driver 1
IN 2
Input to Driver 2
Output of Driver 1
Output of Driver 2
OUT 1
OUT 2
CLAMP A
IN 3
Diode Clamp to Driver 1 and Driver 2
Input to Driver 3
IN 4
Input to Driver 4
OUT 3
OUT 4
CLAMP B
ENABLE
VS
Output of Driver 3
Output of Driver 4
Diode Clamp to Driver3 and Driver 4
Enable Input to All Drivers
Logic Supply Voltage
Common Ground
GND
3/15
L6221C-L6221CN-L6221CD
ELECTRICAL CHARACTERISTICSRefer to The Test Circuit to Fig.1to Fig.9 (VS = 5V, Tamb = 25°Cunless
otherwise specified)
Symbol
Parameter
Logic Supply Voltage
Test Condition
Min.
Typ.
Max.
Unit
VS
IS
4.5
5.5
V
Logic Supply Current
All outputs ON IC = 0.7A
All outputs OFF
20
20
mA
mA
ICEX
Output Leakage Current
VCE = 60V VEN = VEN
VIN = VINL
H
1
mA
VCE(sat)
Collector Emitter Saturation Voltage
(one input on; all others inputs off).
VS = 4.5V VIN = VINH
EN = VEN
V
H
IC = 1A
1.4
1.85
V
V
(*) IC = 2A
VINL, VEN
IINL, IEN
VINH, VEN
L
Input Low Voltage
0.8
V
L
Input Low Current
VIN = VINL VEN = VEN
L
-100
A
µ
H
Input High Voltage
2
V
IINH, IEN
IR
H
Input High Current
VIN = VINH VEN = VEN
H
100
100
µA
Clamp Diode Leakage Current
VR = 60V VEN = VEN
VIN = VINL
H
A
µ
VF
Clamp Diode Forward Voltage
IF = 1A
IF = 2A (*)
1.8
2.2
V
V
td(on)
td(off)
Turn on Delay Time
2
5
ms
VP = 5V R = 10
Ω
L
Turn off Delay Time
VP = 5V R = 10
s
Ω
µ
L
Logic Supply Current Variation
VIN = 5V VEN = 5V
150
mA
I
∆
S
Iout = -500mA for Each
Channel
(*) Only for L6221C- L6221CN types
4/15
L6221C-L6221CN-L6221CD
TEST CIRCUITS
(X) = Referred to Multiwatt package
X = Referred to Powerdip package
Figure 1 : Logic supply current.
Set VIN = 4.5V,V EN =0.8V, orV IN =0.8V, V EN = 4.5V, for I S (all outputs off)
Set V IN = 2V, V EN =2V, for I S (all outputs on)
Figure 2 :
Figure 3 :
.
Output Leakage Current
Output Sustaining Voltage.
VP = +60V
5/15
L6221C-L6221CN-L6221CD
Figure 4 : Collector-emitter Saturation
Figure 5 : Logic Input Characteristics.
Voltage.
Set S1, S2 open,VIN, VEN = 0.8V for IIN L, IEN
Set S1, S2 open, VIN, VEN = 2V for IIN H, IEN
Set S1, S2 close, VIN, VEN = 0.8Vfor VIN L, VEN
Set S1, S2 close, VIN, VEN = 2V for VIN H, VEN
L
H
L
H
Figure 6 :
.
Figure 7 :
Clamp Diode Forward Voltage.
Clamp Diode Leakage Current
VP = +60V
6/15
L6221C-L6221CN-L6221CD
Figure 8 : Switching Times Test Circuit.
Figure 9 : Switching TImes Waveforms.
Figure 10 : Allowed Peak Collector Cur-
rent vs. Duty Cycle for 1, 2, 3
Figure 11 : Allowed Peak Collector Current
vs. Duty Cycle for 1, 2, 3 or 4
Contemporary Working Outputs
(L6221CN).
or 4 Contemporary Working
.
Outputs (L6221C)
7/15
L6221C-L6221CN-L6221CD
Figure 12 : Collector Saturation Voltage
Figure 13 : Free-wheeling Diode Forward
.
vs. Collector Current.
Voltage vs. Diode Current
Figure 14 : Collector Saturation Voltage
vs. Junction Temperature
at IC = 1A.
Figure 15 : Free-wheeling Diode Forward
Voltage vs. Junction Tempera-
.
ture at IF = 1A
Figure 16 : Saturation Voltage vs. Junc-
Figure 17 : Free-wheeling Diode Forward
Voltage vs. Junction Tempera-
ture at If = 1.8A.
tion Temperature at IC = 1.8A.
8/15
L6221C-L6221CN-L6221CD
APPLICATION INFORMATION
Figure 18.
When inductive loads are driven by L6221C/CD, a
zenerdiodein serieswith the integralfree-wheeling
diodes increases the voltage across which energy
stored in the load is discharged and therefore
speedsthe current decay (fig. 18).
The zener has to be chosen in such a way that
VCLAMP is limited to 60V taking into account the
zener’svoltagechangesdueto: spread onVZ, tem-
perature changes,and the voltage drop due to oh-
mic resistance.
Moreover,the instantaneouspower mustbe limited
in order to avoid the reverse second breakdown.
Figure 19 : Driver for Solenoids up to 3A.
Somecare must be taken to ensurethat the collec-
torsare placedclose togetherto avoiddifferentcur-
rent partitioning at turn-off.
electricalcharacteristicsof thelogicsection(turn-on
and turn-off delay time) and the power stages(col-
lector saturation voltage, free-wheeling diode for-
ward voltage).
We suggest to put in parallel channel 1 and 4 and
channel2 and3 as shownin figure19for thesimilar
9/15
L6221C-L6221CN-L6221CD
Figure 20 : Saturation Voltage vs.
Figure 21 : Peak Collector Current vs.
Duty Cycle for 1 or 2 Paralleled
Outputs Driven (L6221N).
Collector Current.
Figure 22 : Peak Collector Current vs.
Duty Cycle for 1 or 2 Paralleled
Outputs Driven (L6221CN).
10/15
L6221C-L6221CN-L6221CD
MOUNTING INSTRUCTION
The Rth j-amb of the L6221Ccan be reduced by sol-
deringthe GND pinsto a suitablecopperareaof the
printed circuit board (Fig. 23) or to an external
heatsink(Fig. 24).
ing a thickness of 35µ (1.4 mils). During soldering
the pins temperature must not exceed 260 °C and
the soldering time must not be longer than 12 sec-
onds.
The diagram of figure 25 shows the maximum dis-
sipable power Ptot and the Rth j-amb as a functionof
theside ” α” of two equalsquarecopperareashav-
The externalheatsink or printed circuit copper area
must be connected to electrical ground.
Figure 24 :
External Heatsink Mounting
Example.
Figure 23 :
Example of P.C. Board Copper
Area Which is Used as Heatsink.
Figure 25 : Maximum Dissipable Power
Figure 26 : Maximum Allowable Power
Dissipation vs. Ambient
Temperature.
and Junction to Ambient Ther-
mal Resistance vs. Side ” α”
.
11/15
L6221C-L6221CN-L6221CD
MULTIWATT15 PACKAGE MECHANICAL DATA
DIM.
mm
inch
TYP.
MIN.
TYP.
MAX.
5
MIN.
MAX.
0.197
0.104
0.063
A
B
2.65
1.6
C
D
1
0.039
E
0.49
0.66
1.14
17.57
19.6
0.55
0.75
1.4
0.019
0.026
0.045
0.692
0.772
0.022
0.030
0.055
0.705
F
G
1.27
0.050
0.700
G1
H1
H2
L
17.78
17.91
20.2
22.6
22.5
18.1
17.75
10.9
2.9
0.795
0.890
0.886
0.713
0.699
0.429
0.114
0.181
0.209
0.102
0.102
0.152
22.1
22
0.870
0.866
0.695
0.679
0.406
0.104
0.165
0.177
0.075
0.075
0.144
L1
L2
L3
L4
L7
M
17.65
17.25
10.3
2.65
4.2
17.5
10.7
0.689
0.421
4.3
4.6
0.169
0.200
M1
S
4.5
5.08
5.3
1.9
2.6
S1
Dia1
1.9
2.6
3.65
3.85
12/15
L6221C-L6221CN-L6221CD
POWERDIP16 PACKAGE MECHANICAL DATA
DIM.
mm
inch
MIN.
0.51
0.85
TYP.
MAX.
MIN.
0.020
0.033
TYP.
MAX.
a1
B
b
1.40
0.055
0.50
0.020
b1
D
E
e
0.38
0.50
20.0
0.015
0.020
0.787
8.80
2.54
0.346
0.100
0.700
e3
F
17.78
7.10
5.10
0.280
0.201
I
L
3.30
0.130
Z
1.27
0.050
13/15
L6221C-L6221CN-L6221CD
SO20 PACKAGE MECHANICAL DATA
DIM.
mm
inch
TYP.
MIN.
TYP.
MAX.
2.65
0.3
MIN.
MAX.
0.104
0.012
0.096
0.019
0.013
A
a1
a2
b
0.1
0.004
2.45
0.49
0.32
0.35
0.23
0.014
0.009
b1
C
0.5
0.020
c1
D
45 (typ.)
12.6
10
13.0
0.496
0.394
0.512
0.419
E
10.65
e
1.27
0.050
0.450
e3
F
11.43
7.4
0.5
7.6
0.291
0.020
0.299
0.050
0.030
L
1.27
0.75
M
S
8 (max.)
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L6221C-L6221CN-L6221CD
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for
the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its
use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specification
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1997 SGS-THOMSON Microelectronics – Printed in Italy – All Rights Reserved
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