M28R400CT [STMICROELECTRONICS]
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory; 4兆位( 256Kb的X16 ,引导块) 1.8V供应快闪记忆体型号: | M28R400CT |
厂家: | ST |
描述: | 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory |
文件: | 总50页 (文件大小:709K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M28R400CT
M28R400CB
4 Mbit (256Kb x16, Boot Block)
1.8V Supply Flash Memory
FEATURES SUMMARY
■ SUPPLY VOLTAGE
Figure 1. Packages
– V = 1.65V to 2.2V Core Power Supply
DD
– V
= 1.65V to 2.2V for Input/Output
DDQ
– V = 12V for fast Program (optional)
PP
■ ACCESS TIMES: 90ns, 120ns
■ PROGRAMMING TIME
FBGA
– 10µs typical
– Double Word Programming Option
■ COMMON FLASH INTERFACE
– 64 bit Security Code
TFBGA46 (ZB)
6.39 x 6.37mm
■ MEMORY BLOCKS
– Parameter Blocks (Top or Bottom location)
– Main Blocks
■ BLOCK LOCKING
– All blocks locked at Power Up
– Any combination of blocks can be locked
– WP for Block Lock-Down
■ SECURITY
– 64 bit user Programmable OTP cells
– 64 bit unique device identifier
– One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code, M28R400CT: 882Ah
– Bottom Device Code, M28R400CB: 882Bh
March 2003
1/50
M28R400CT, M28R400CB
TABLE OF CONTENTS
SUMMARY DESCRIPTION. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 2. Logic Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Table 1. Signal Names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Figure 3. TFBGA Connections (Top view through package). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Figure 4. Block Addresses. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Figure 5. Security Block Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
SIGNAL DESCRIPTIONS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Address Inputs (A0-A17). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data Input/Output (DQ0-DQ15). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Chip Enable (E). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Output Enable (G). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Write Enable (W). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Write Protect (WP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Reset (RP). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
V
V
V
V
Supply Voltage (1.65V to 2.2V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
DD
Supply Voltage (1.65V to 2.2V). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
DDQ
Program Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Ground. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
PP
SS
BUS OPERATIONS. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Read.. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Write. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Output Disable. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Automatic Standby. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Reset. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Table 2. Bus Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
COMMAND INTERFACE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read Memory Array Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read Electronic Signature Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Read CFI Query Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Block Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Chip Erase Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Double Word Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Clear Status Register Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Program/Erase Suspend Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Program/Erase Resume Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Protection Register Program Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Block Lock-Down Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . 12
2/50
M28R400CT, M28R400CB
Table 3. Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Table 4. Read Electronic Signature. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 5. Read Block Lock Signature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 6. Read Protection Register and Lock Register . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Table 7. Program, Erase Times and Program/Erase Endurance Cycles . . . . . . . . . . . . . . . . . . . . 15
BLOCK LOCKING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Reading a Block’s Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Locked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Unlocked State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Lock-Down State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Locking Operations During Erase Suspend . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Table 8. Block Lock Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Table 9. Protection Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STATUS REGISTER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Program/Erase Controller Status (Bit 7) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Erase Suspend Status (Bit 6) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Erase Status (Bit 5) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Program Status (Bit 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
V
Status (Bit 3). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
PP
Program Suspend Status (Bit 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Block Protection Status (Bit 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Reserved (Bit 0). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Table 10. Status Register Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
MAXIMUM RATING. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Table 11. Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
DC and AC PARAMETERS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 12. Operating and AC Measurement Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 6. AC Measurement I/O Waveform . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 7. AC Measurement Load Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 13. Capacitance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Table 14. DC Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Figure 8. Read AC Waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 15. Read AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 9. Write AC Waveforms, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Table 16. Write AC Characteristics, Write Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 10. Write AC Waveforms, Chip Enable Controlled. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Table 17. Write AC Characteristics, Chip Enable Controlled . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 11. Power-Up and Reset AC Waveforms. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 18. Power-Up and Reset AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
3/50
M28R400CT, M28R400CB
PACKAGE MECHANICAL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 12. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75 mm pitch, Bottom View Package Outline29
Table 19. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75 mm pitch, Package Mechanical Data. . . 29
Figure 13. TFBGA46 Daisy Chain - Package Connections (Top view through package) . . . . . . . . 30
Figure 14. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package) . . . . 30
PART NUMBERING . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 20. Ordering Information Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 21. Daisy Chain Ordering Scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
APPENDIX A. BLOCK ADDRESS TABLES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 22. Top Boot Block Addresses, M28R400CT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
Table 23. Bottom Boot Block Addresses, M28R400CB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 32
APPENDIX B. COMMON FLASH INTERFACE (CFI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 24. Query Structure Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 25. CFI Query Identification String . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33
Table 26. CFI Query System Interface Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34
Table 27. Device Geometry Definition. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Table 28. Primary Algorithm-Specific Extended Query Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 29. Security Code Area . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37
APPENDIX C. FLOWCHARTS AND PSEUDO CODES. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 15. Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
Figure 16. Double Word Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Figure 17. Program Suspend & Resume Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . 40
Figure 18. Block Erase Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41
Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code. . . . . . . . . . . . . . . . . . . . . . . . 42
Figure 20. Locking Operations Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Figure 21. Protection Register Program Flowchart and Pseudo Code . . . . . . . . . . . . . . . . . . . . . . 44
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE . . . . . . . 45
Table 30. Write State Machine Current/Next, sheet 1 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45
Table 31. Write State Machine Current/Next, sheet 2 of 2. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
REVISION HISTORY. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 32. Document Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
4/50
M28R400CT, M28R400CB
SUMMARY DESCRIPTION
The M28R400C is a 4 Mbit (256Kbit x 16) non-vol-
atile Flash memory that can be erased electrically
at the block level and programmed in-system on a
Word-by-Word basis. These operations can be
performed using a single low voltage (1.65 to
The memory is offered in a TFBGA46 (0.75mm
pitch) package and is supplied with all the bits
erased (set to ’1’).
Figure 2. Logic Diagram
2.2V) supply. V
allows to drive the I/O pin
DDQ
down to 1.65V. An optional 12V V power supply
is provided to speed up customer programming.
PP
V
V
V
DD DDQ PP
The device features an asymmetrical blocked ar-
chitecture. The M28R400C has an array of 15
blocks: 8 Parameter Blocks of 4 KWord and 7
Main Blocks of 32 KWord. M28R400CT has the
Parameter Blocks at the top of the memory ad-
dress space while the M28R400CB locates the
Parameter Blocks starting from the bottom. The
memory maps are shown in Figure 4, Block Ad-
dresses.
18
16
A0-A17
DQ0-DQ15
W
E
M28R400CT
M28R400CB
G
The M28R400C features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency, enabling in-
stant code and data protection. All blocks have
three levels of protection. They can be locked and
locked-down individually preventing any acciden-
tal programming or erasure. There is an additional
hardware protection against program and block
RP
WP
V
SS
erase. When V ≤ V
all blocks are protected
PP
PPLK
AI04392
against program or block erase. All blocks are
locked at power-up.
Each block can be erased separately. Erase can
be suspended in order to perform either read or
program in any other block and then resumed.
Program can be suspended to read data in any
other block and then resumed. Each block can be
programmed and erased over 100,000 cycles.
Table 1. Signal Names
A0-A17
Address Inputs
DQ0-DQ15
Data Input/Output
Chip Enable
E
The device includes a 128 bit Protection Register
and a Security Block to increase the protection of
a system design. The Protection Register is divid-
ed into two 64 bit segments, the first one contains
a unique device number written by ST, while the
second one is one-time-programmable by the us-
er. The user programmable segment can be per-
manently protected. The Security Block,
parameter block 0, can be permanently protected
by the user. Figure 5, shows the Security Block
Memory Map.
G
Output Enable
Write Enable
Reset
W
RP
WP
Write Protect
Core Power Supply
V
DD
Power Supply for
Input/Output
V
DDQ
Program and Erase commands are written to the
Command Interface of the memory. An on-chip
Program/Erase Controller takes care of the tim-
ings necessary for program and erase operations.
The end of a program or erase operation can be
detected and any error conditions identified. The
command set required to control the memory is
consistent with JEDEC standards.
Optional Supply Voltage for
Fast Program & Erase
V
V
PP
Ground
SS
NC
Not Connected Internally
5/50
M28R400CT, M28R400CB
Figure 3. TFBGA Connections (Top view through package)
1
2
3
4
5
6
7
8
WP
NC
NC
A17
A
B
C
D
E
F
A13
A14
A15
A16
A11
A10
A8
W
V
A7
A5
A4
A2
A1
A0
PP
RP
A12
A9
A6
A3
DQ11
DQ12
DQ4
DQ2
DQ3
DQ14
DQ15
DQ7
DQ5
DQ6
DQ13
DQ8
DQ9
DQ10
E
V
DQ0
DQ1
V
DDQ
SS
V
V
SS
DD
G
AI04142
6/50
M28R400CT, M28R400CB
Figure 4. Block Addresses
M28R400CT
Top Boot Block Addresses
M28R400CB
Bottom Boot Block Addresses
3FFFF
3F000
3FFFF
4 KWords
32 KWords
32 KWords
38000
37FFF
Total of 8
4 KWord Blocks
30000
Total of 7
32 KWord Blocks
38FFF
4 KWords
38000
37FFF
32 KWords
30000
0FFFF
32 KWords
4 KWords
08000
07FFF
Total of 7
07000
32 KWord Blocks
Total of 8
0FFFF
4 KWord Blocks
32 KWords
32 KWords
08000
07FFF
00FFF
00000
4 KWords
00000
AI04393
Note: Also see Appendix A, Tables 22 and 23 for a full listing of the Block Addresses.
Figure 5. Security Block Memory Map
88h
User Programmable OTP
Unique device number
85h
84h
Parameter Block # 0
81h
80h
Protection Register Lock
2
1
0
AI03523
7/50
M28R400CT, M28R400CB
SIGNAL DESCRIPTIONS
See Figure 2 Logic Diagram and Table 1,Signal
Names, for a brief overview of the signals connect-
ed to this device.
Address Inputs (A0-A17). The Address Inputs
select the cells in the memory array to access dur-
ing Bus Read operations. During Bus Write opera-
tions they control the commands sent to the
Command Interface of the internal state machine.
Data Input/Output (DQ0-DQ15). The Data I/O
outputs the data stored at the selected address
during a Bus Read operation or inputs a command
or the data to be programmed during a Write Bus
operation.
state. When Reset is at V , the device is in normal
IH
operation. Exiting reset mode the device enters
read array mode, but a negative transition of Chip
Enable or a change of the address is required to
ensure valid data outputs.
V
Supply Voltage (1.65V to 2.2V). V
DD
DD
provides the power supply to the internal core of
the memory device. It is the main power supply for
all operations (Read, Program and Erase).
V
Supply Voltage (1.65V to 2.2V). V
DDQ
DDQ
provides the power supply to the I/O pins and en-
ables all Outputs to be powered independently
from V . V
can be tied to V
or can use a
DD
DD
DDQ
separate supply.
Chip Enable (E). The Chip Enable input acti-
vates the memory control logic, input buffers, de-
coders and sense amplifiers. When Chip Enable is
V
Program Supply Voltage. V
control input and a power supply pin. The two
functions are selected by the voltage range ap-
is both a
PP
PP
at V and Reset is at V the device is in active
IL
IH
mode. When Chip Enable is at V the memory is
plied to the pin. The Supply Voltage V
and the
IH
DD
deselected, the outputs are high impedance and
the power consumption is reduced to the stand-by
level.
Program Supply Voltage V
any order.
can be applied in
PP
If V is kept in a low voltage range (0V to 3.6V)
PP
Output Enable (G). The Output Enable controls
data outputs during the Bus Read operation of the
memory.
Write Enable (W). The Write Enable controls the
Bus Write operation of the memory’s Command
Interface. The data and address inputs are latched
on the rising edge of Chip Enable, E, or Write En-
able, W, whichever occurs first.
V
is seen as a control input. In this case a volt-
PP
age lower than V
gram or block erase, while V
these functions (see Table 14, DC Characteristics
for the relevant values). V is only sampled at the
beginning of a program or block erase; a change
in its value after the operation has started does not
have any effect and program or erase operations
continue.
If V is in the range 11.4V to 12.6V it acts as a
power supply pin. In this condition V
gives protection against pro-
PPLK
> V
enables
PP
PP1
PP
Write Protect (WP). Write Protect is an input
that gives an additional hardware protection for
PP
must be
PP
each block. When Write Protect is at V , the Lock-
IL
stable until the Program/Erase algorithm is com-
pleted (see Table 16 and 17).
Down is enabled and the protection status of the
block cannot be changed. When Write Protect is at
V , the Lock-Down is disabled and the block can
be locked or unlocked. (refer to Table 6, Read Pro-
tection Register and Protection Register Lock).
V
Ground. V is the reference for all voltage
SS SS
IH
measurements.
Note: Each device in a system should have
Reset (RP). The Reset input provides a hard-
V
, V
and V decoupled with a 0.1µF ca-
DD DDQ PP
ware reset of the memory. When Reset is at V ,
pacitor close to the pin. See Figure 7, AC Mea-
surement Load Circuit. The PCB trace widths
should be sufficient to carry the required V
program and erase currents.
IL
the memory is in reset mode: the outputs are high
impedance and the current consumption is mini-
mized. After Reset all blocks are in the Locked
PP
8/50
M28R400CT, M28R400CB
BUS OPERATIONS
There are six standard bus operations that control
the device. These are Bus Read, Bus Write, Out-
put Disable, Standby, Automatic Standby and Re-
set. See Table 2, Bus Operations, for a summary.
See Figures 9 and 10, Write AC Waveforms, and
Tables 16 and 17, Write AC Characteristics, for
details of the timing requirements.
Output Disable. The data outputs are high im-
Typically glitches of less than 5ns on Chip Enable
or Write Enable are ignored by the memory and do
not affect bus operations.
Read. Read Bus operations are used to output
the contents of the Memory Array, the Electronic
Signature, the Status Register and the Common
Flash Interface. Both Chip Enable and Output En-
pedance when the Output Enable is at V .
IH
Standby. Standby disables most of the internal
circuitry allowing a substantial reduction of the cur-
rent consumption. The memory is in stand-by
when Chip Enable is at V and the device is in
IH
read mode. The power consumption is reduced to
the stand-by level and the outputs are set to high
impedance, independently from the Output Enable
or Write Enable inputs. If Chip Enable switches to
able must be at V in order to perform a read op-
IL
eration. The Chip Enable input should be used to
enable the device. Output Enable should be used
to gate data onto the output. The data read de-
pends on the previous command written to the
memory (see Command Interface section). See
Figure 8, Read Mode AC Waveforms, and Table
15, Read AC Characteristics, for details of when
the output becomes valid.
V
during a program or erase operation, the de-
IH
vice enters Standby mode when finished.
Automatic Standby. Automatic Standby pro-
vides a low power consumption state during Read
mode. Following a read operation, the device en-
ters Automatic Standby after 150ns of bus inactiv-
ity even if Chip Enable is Low, V , and the supply
IL
Read mode is the default state of the device when
exiting Reset or after power-up.
Write. Bus Write operations write Commands to
the memory or latch Input Data to be programmed.
A write operation is initiated when Chip Enable
current is reduced to I
puts will still output data if a bus Read operation is
in progress.
. The data Inputs/Out-
DD1
Reset. During Reset mode when Output Enable
is Low, V , the memory is deselected and the out-
IL
and Write Enable are at V with Output Enable at
V . Commands, Input Data and Addresses are
IH
puts are high impedance. The memory is in Reset
IL
mode when Reset is at V . The power consump-
IL
latched on the rising edge of Write Enable or Chip
Enable, whichever occurs first.
tion is reduced to the Standby level, independently
from the Chip Enable, Output Enable or Write En-
able inputs. If Reset is pulled to V during a Pro-
SS
gram or Erase, this operation is aborted and the
memory content is no longer valid.
Table 2. Bus Operations
V
Operation
Bus Read
E
G
W
RP
WP
X
DQ0-DQ15
Data Output
Data Input
Hi-Z
PP
V
V
V
IH
V
Don’t Care
V or V
DD
IL
IL
IL
IL
IH
IH
IH
V
V
V
V
V
V
V
V
Bus Write
Output Disable
Standby
X
IL
IH
PPH
V
X
Don’t Care
Don’t Care
Don’t Care
IH
IH
V
X
X
X
Hi-Z
IH
IH
V
IL
Reset
X
X
X
X
Hi-Z
Note: X = V or V , V = 12V ± 5%.
PPH
IL
IH
9/50
M28R400CT, M28R400CB
COMMAND INTERFACE
All Bus Write operations to the memory are inter-
preted by the Command Interface. Commands
consist of one or more sequential Bus Write oper-
ations. An internal Program/Erase Controller han-
dles all timings and verifies the correct execution
of the Program and Erase commands. The Pro-
gram/Erase Controller provides a Status Register
whose output may be read at any time during, to
monitor the progress of the operation, or the Pro-
gram/Erase states. See Appendix D, Table 30,
Write State Machine Current/Next, for a summary
of the Command Interface.
cations to automatically match their interface to
the characteristics of the device. One Bus Write
cycle is required to issue the Read Query Com-
mand. Once the command is issued subsequent
Bus Read operations read from the Common
Flash Interface Memory Area. See Appendix B,
Common Flash Interface, Tables 24, 25, 26, 27,
28 and 29 for details on the information contained
in the Common Flash Interface memory area.
Block Erase Command
The Block Erase command can be used to erase
a block. It sets all the bits within the selected block
to ’1’. All previous data in the block is lost. If the
block is protected then the Erase operation will
abort, the data in the block will not be changed and
the Status Register will output the error.
Two Bus Write cycles are required to issue the
command.
■ The first bus cycle sets up the Erase command.
■ The second latches the block address in the
internal state machine and starts the Program/
Erase Controller.
If the second bus cycle is not Write Erase Confirm
(D0h), Status Register bits b4 and b5 are set and
the command aborts.
The Command Interface is reset to Read mode
when power is first applied, when exiting from Re-
set or whenever V
is lower than V
. Com-
DD
LKO
mand sequences must be followed exactly. Any
invalid combination of commands will reset the de-
vice to Read mode. Refer to Table 3, Commands,
in conjunction with the text descriptions below.
Read Memory Array Command
The Read command returns the memory to its
Read mode. One Bus Write cycle is required to is-
sue the Read Memory Array command and return
the memory to Read mode. Subsequent read op-
erations will read the addressed location and out-
put the data. When a device Reset occurs, the
memory defaults to Read mode.
Erase aborts if Reset turns to V . As data integrity
IL
cannot be guaranteed when the Erase operation is
aborted, the block must be erased again.
Read Status Register Command
The Status Register indicates when a program or
erase operation is complete and the success or
failure of the operation itself. Issue a Read Status
Register command to read the Status Register’s
contents. Subsequent Bus Read operations read
the Status Register at any address, until another
command is issued. See Table 10, Status Register
Bits, for details on the definitions of the bits.
The Read Status Register command may be is-
sued at any time, even during a Program/Erase
operation. Any Read attempt during a Program/
Erase operation will automatically output the con-
tent of the Status Register.
During Erase operations the memory will accept
the Read Status Register command and the Pro-
gram/Erase Suspend command, all other com-
mands will be ignored. Typical Erase times are
given in Table 7, Program, Erase Times and Pro-
gram/Erase Endurance Cycles.
See Appendix C, Figure 18, Block Erase Flow-
chart and Pseudo Code, for a suggested flowchart
for using the Block Erase command.
Chip Erase Command
The Chip Erase command can be used to erase
the entire chip. It sets all of the bits in unprotected
blocks of the memory to ’1’. All previous data is
lost. Two Bus Write operations are required to is-
sue the Chip Erase Command.
Read Electronic Signature Command
The Read Electronic Signature command reads
the Manufacturer and Device Codes and the Block
Locking Status, or the Protection Register.
■ The first bus cycle sets up the Chip Erase
command.
The Read Electronic Signature command consists
of one write cycle, a subsequent read will output
the Manufacturer Code, the Device Code, the
Block Lock and Lock-Down Status, or the Protec-
tion and Lock Register. See Tables 4, 5 and 6 for
the valid address.
■ The second confirms the Chip Erase command
and starts the Program/Erase Controller.
The command can be issued to any address. If
any blocks are protected then these are ignored
and all the other blocks are erased. If all of the
blocks are protected the Chip Erase operation ap-
pears to start but will terminate, leaving the data
unchanged. No error condition is given when pro-
tected blocks are ignored.
Read CFI Query Command
The Read Query Command is used to read data
from the Common Flash Interface (CFI) Memory
Area, allowing programming equipment or appli-
10/50
M28R400CT, M28R400CB
During the erase operation the memory will only
accept the Read Status Register command. All
other commands will be ignored, including the
Erase Suspend command. It is not possible to is-
sue any command to abort the operation.
Chip Erase commands should be limited to a max-
imum of 100 Program/Erase cycles. After 100 Pro-
gram/Erase cycles the internal algorithm will still
operate properly but some degradation in perfor-
mance may occur.
tion is aborted, the block containing the memory
location must be erased and reprogrammed.
See Appendix C, Figure 16, Double Word Pro-
gram Flowchart and Pseudo Code, for the flow-
chart for using the Double Word Program
command.
Clear Status Register Command
The Clear Status Register command can be used
to reset bits 1, 3, 4 and 5 in the Status Register to
‘0’. One bus write cycle is required to issue the
Clear Status Register command.
Typical chip erase times are given in Table 7.
Program Command
The bits in the Status Register do not automatical-
ly return to ‘0’ when a new Program or Erase com-
mand is issued. The error bits in the Status
Register should be cleared before attempting a
new Program or Erase command.
The memory array can be programmed word-by-
word. Two bus write cycles are required to issue
the Program Command.
■ The first bus cycle sets up the Program
command.
Program/Erase Suspend Command
■ The second latches the Address and the Data to
be written and starts the Program/Erase
Controller.
During Program operations the memory will ac-
cept the Read Status Register command and the
Program/Erase Suspend command. Typical Pro-
gram times are given in Table 7, Program, Erase
Times and Program/Erase Endurance Cycles.
The Program/Erase Suspend command is used to
pause a Program or Erase operation. One bus
write cycle is required to issue the Program/Erase
command and pause the Program/Erase control-
ler.
During Program/Erase Suspend the Command In-
terface will accept the Program/Erase Resume,
Read Array, Read Status Register, Read Electron-
ic Signature and Read CFI Query commands. Ad-
ditionally, if the suspend operation was Erase then
the Program, Block Lock, Block Lock-Down or
Protection Program commands will also be ac-
cepted. The block being erased may be protected
by issuing the Block Protect, Block Lock or Protec-
tion Program commands. When the Program/
Erase Resume command is issued the operation
will complete. Only the blocks not being erased
may be read or programmed correctly.
Programming aborts if Reset goes to V . As data
IL
integrity cannot be guaranteed when the program
operation is aborted, the block containing the
memory location must be erased and repro-
grammed.
See Appendix C, Figure 15, Program Flowchart
and Pseudo Code, for the flowchart for using the
Program command.
Double Word Program Command
This feature is offered to improve the programming
throughput, writing a page of two adjacent words
in parallel.The two words must differ only for the
address A0. Programming should not be attempt-
During a Program/Erase Suspend, the device can
be placed in a pseudo-standby mode by taking
Chip Enable to V . Program/Erase is aborted if
IH
Reset turns to V .
IL
ed when V is not at V
. The command can be
PP
PPH
See Appendix C, Figure 17, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
19, Erase Suspend & Resume Flowchart and
Pseudo Code for flowcharts for using the Program/
Erase Suspend command.
executed if V is below V
but the result is not
PP
PPH
guaranteed.
Three bus write cycles are necessary to issue the
Double Word Program command.
■ The first bus cycle sets up the Double Word
Program Command.
■ The second bus cycle latches the Address and
Program/Erase Resume Command
The Program/Erase Resume command can be
used to restart the Program/Erase Controller after
a Program/Erase Suspend operation has paused
it. One Bus Write cycle is required to issue the
command. Once the command is issued subse-
quent Bus Read operations read the Status Reg-
ister.
See Appendix C, Figure 17, Program Suspend &
Resume Flowchart and Pseudo Code, and Figure
19, Erase Suspend & Resume Flowchart and
the Data of the first word to be written.
■ The third bus cycle latches the Address and the
Data of the second word to be written and starts
the Program/Erase Controller.
Read operations output the Status Register con-
tent after the programming has started. Program-
ming aborts if Reset goes to V . As data integrity
IL
cannot be guaranteed when the program opera-
11/50
M28R400CT, M28R400CB
Pseudo Code for flowcharts for using the Program/
Erase Resume command.
Protection Register Program Command
The Protection Register Program command is
used to Program the 64 bit user One-Time-Pro-
grammable (OTP) segment of the Protection Reg-
ister. The segment is programmed 16 bits at a
time. When shipped all bits in the segment are set
to ‘1’. The user can only program the bits to ‘0’.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 9 shows the protection status after issuing
a Block Lock command.
The Block Lock bits are volatile, once set they re-
main set until a hardware reset or power-down/
power-up. They are cleared by a Blocks Unlock
command. Refer to the section, Block Locking, for
a detailed explanation.
Block Unlock Command
Two write cycles are required to issue the Protec-
tion Register Program command.
■ The first bus cycle sets up the Protection
The Blocks Unlock command is used to unlock a
block, allowing the block to be programmed or
erased. Two Bus Write cycles are required to is-
sue the Blocks Unlock command.
Register Program command.
■ The second latches the Address and the Data to
be written to the Protection Register and starts
the Program/Erase Controller.
■ The first bus cycle sets up the Block Unlock
command.
■ The second Bus Write cycle latches the block
Read operations output the Status Register con-
tent after the programming has started.
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Table. 9 shows the protection status after issuing
a Block Unlock command. Refer to the section,
Block Locking, for a detailed explanation.
Block Lock-Down Command
A locked block cannot be Programmed or Erased,
or have its protection status changed when WP is
The segment can be protected by programming bit
1 of the Protection Lock Register. Bit 1 of the Pro-
tection Lock Register protects bit 2 of the Protec-
tion Lock Register. Programming bit 2 of the
Protection Lock Register will result in a permanent
protection of the Security Block (see Figure 5, Se-
curity Block Memory Map). Attempting to program
a previously protected Protection Register will re-
sult in a Status Register error. The protection of
the Protection Register and/or the Security Block
is not reversible.
The Protection Register Program cannot be sus-
pended. See Appendix C, Figure 21, Protection
Register Program Flowchart and Pseudo Code,
for the flowchart for using the Protection Register
Program command.
low, V . When WP is high, V the Lock-Down
IL
IH,
function is disabled and the locked blocks can be
individually unlocked by the Block Unlock com-
mand.
Two Bus Write cycles are required to issue the
Block Lock-Down command.
■ The first bus cycle sets up the Block Lock
command.
Block Lock Command
■ The second Bus Write cycle latches the block
The Block Lock command is used to lock a block
and prevent Program or Erase operations from
changing the data in it. All blocks are locked at
power-up or reset.
Two Bus Write cycles are required to issue the
Block Lock command.
address.
The lock status can be monitored for each block
using the Read Electronic Signature command.
Locked-Down blocks revert to the locked (and not
locked-down) state when the device is reset on
power-down. Table. 9 shows the protection status
after issuing a Block Lock-Down command. Refer
to the section, Block Locking, for a detailed expla-
nation.
■ The first bus cycle sets up the Block Lock
command.
■ The second Bus Write cycle latches the block
address.
12/50
M28R400CT, M28R400CB
Table 3. Commands
Commands
Bus Write Operations
No. of
Cycles
1st Cycle
2nd Cycle
Addr
3nd Cycle
Addr
Bus
Op.
Bus
Op.
Bus
Op.
Addr Data
Data
Data
Read
Addr
Read Memory Array
1+
1+
1+
Write
Write
Write
X
X
X
FFh
70h
90h
Data
Read
Read
Status
Register
Read Status Register
Read Electronic Signature
X
Signature
Signature
Read
Read
Write
Write
Write
(2)
Addr
Read CFI Query
Block Erase
Chip Erase
Program
1+
2
Write
Write
Write
Write
55h
X
98h
20h
80h
CFI Addr
Query
D0h
Block
Addr
2
X
X
D0h
40h or
10h
Data
Input
2
X
Addr
Data
Input
Data
Input
(3)
3
Write
X
30h
Write
Addr 1
Write
Addr 2
Double Word Program
Clear Status Register
Program/Erase Suspend
Program/Erase Resume
1
1
1
Write
Write
Write
X
X
X
50h
B0h
D0h
Block
Address
Block Lock
2
2
2
2
Write
Write
Write
Write
X
X
X
X
60h
60h
60h
C0h
Write
Write
Write
Write
01h
D0h
2Fh
Block
Address
Block Unlock
Block Lock-Down
Block
Address
Protection Register
Program
Data
Input
Address
Note: 1. X = Don’t Care.
2. The signature addresses are listed in Tables 4, 5 and 6.
3. Addr 1 and Addr 2 must be consecutive Addresses differing only for A0.
13/50
M28R400CT, M28R400CB
Table 4. Read Electronic Signature
Code
Device
E
G
W
A0
A1
A2-A7
A8-A17
DQ0-DQ7
DQ8-DQ15
Manufacture.
Code
V
V
IL
V
IH
V
IL
V
IL
0
Don’t Care
20h
00h
IL
V
V
V
V
V
V
V
V
M28R400CT
M28R400CB
0
0
Don’t Care
Don’t Care
2Ah
2Bh
88h
88h
IL
IL
IH
IH
IL
Device Code
V
IH
V
IL
IL
IL
IH
Note:
RP = V .
IH
Table 5. Read Block Lock Signature
Block Status
Locked Block
E
G
W
A0
A1 A2-A7
A8-A11
A12-A17
DQ0 DQ1 DQ2-DQ15
V
IL
V
V
IH
V
IL
V
0
0
Don’t Care Block Address
Don’t Care Block Address
1
0
0
0
00h
00h
IL
IL
IH
IH
V
V
V
V
V
V
V
IL
V
Unlocked Block
IL
IH
Locked-Down
Block
(1)
V
IL
V
IH
0
Don’t Care Block Address
1
00h
IL
IL
IH
X
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see Block Locking section.
Table 6. Read Protection Register and Lock Register
Word
E
G
W
A0-A7
A8-A17
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
OTP Prot.
data
Security
prot. data
V
IL
V
V
IH
Lock
80h Don’t Care
0
00h
00h
IL
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
V
IH
Unique ID 0
Unique ID 1
Unique ID 2
Unique ID 3
OTP 0
81h Don’t Care
82h Don’t Care
83h Don’t Care
84h Don’t Care
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
ID data
ID data
85h Don’t Care OTP data
86h Don’t Care OTP data
87h Don’t Care OTP data
88h Don’t Care OTP data
OTP data
OTP data
OTP data
OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP 1
OTP 2
OTP 3
14/50
M28R400CT, M28R400CB
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
M28R400C
Parameter
Test Conditions
Unit
Min
Typ
10
Max
200
200
5
V
= V
DD
Word Program
µs
PP
V
V
= 12V ±5%
= 12V ±5%
= V
Double Word Program
Main Block Program
10
µs
PP
0.16
0.32
0.02
0.04
1
s
PP
V
5
s
PP
DD
V
V
V
V
V
= 12V ±5%
= V
4
s
PP
Parameter Block Program
Main Block Erase
V
4
s
PP
DD
= 12V ±5%
= V
10
10
10
10
s
PP
V
1
s
PP
DD
= 12V ±5%
= V
2
s
PP
Chip Erase (preprogrammed)
Chip Program
V
2
s
PP
DD
= 12V ±5%
= V
1.25
25
s
PP
V
s
PP
DD
= 12V ±5%
= V
0.8
0.8
10
10
s
s
PP
Parameter Block Erase
V
PP
DD
Program/Erase Cycles (per Block)
100,000
cycles
15/50
M28R400CT, M28R400CB
BLOCK LOCKING
The M28R400C features an instant, individual
block locking scheme that allows any block to be
locked or unlocked with no latency. This locking
scheme has three levels of protection.
software commands. A locked block can be un-
locked by issuing the Unlock command.
Lock-Down State
Blocks that are Locked-Down (state (0,1,x))are
protected from program and erase operations (as
for Locked blocks) but their lock status cannot be
changed using software commands alone. A
Locked or Unlocked block can be Locked-Down by
issuing the Lock-Down command. Locked-Down
blocks revert to the Locked state when the device
is reset or powered-down.
■ Lock/Unlock - this first level allows software-
only control of block locking.
■ Lock-Down - this second level requires
hardware interaction before locking can be
changed.
■ V ≤ V
- the third level offers a hardware
PP
PPLK
The Lock-Down function is dependent on the WP
protection against program and block erase on
all blocks.
input pin. When WP=0 (V ), the blocks in the
IL
Lock-Down state (0,1,x) are protected from pro-
gram, erase and protection status changes. When
The lock status of each block can be set to
Locked, Unlocked, and Lock-Down. Table 9, de-
fines all of the possible protection states (WP,
DQ1, DQ0), and Appendix C, Figure 20, shows a
flowchart for the locking operations.
WP=1 (V ) the Lock-Down function is disabled
IH
(1,1,1) and Locked-Down blocks can be individu-
ally unlocked to the (1,1,0) state by issuing the
software command, where they can be erased and
programmed. These blocks can then be relocked
(1,1,1) and unlocked (1,1,0) as desired while WP
remains high. When WP is low , blocks that were
previously Locked-Down return to the Lock-Down
state (0,1,x) regardless of any changes made
while WP was high. Device reset or power-down
resets all blocks , including those in Lock-Down, to
the Locked state.
Reading a Block’s Lock Status
The lock status of every block can be read in the
Read Electronic Signature mode of the device. To
enter this mode write 90h to the device. Subse-
quent reads at the address specified in Table 5,
will output the lock status of that block. The lock
status is represented by DQ0 and DQ1. DQ0 indi-
cates the Block Lock/Unlock status and is set by
the Lock command and cleared by the Unlock
command. It is also automatically set when enter-
ing Lock-Down. DQ1 indicates the Lock-Down sta-
tus and is set by the Lock-Down command. It
cannot be cleared by software, only by a hardware
reset or power-down.
Locking Operations During Erase Suspend
Changes to block lock status can be performed
during an erase suspend by using the standard
locking command sequences to unlock, lock or
lock-down a block. This is useful in the case when
another block needs to be updated while an erase
operation is in progress.
To change block locking during an erase opera-
tion, first write the Erase Suspend command, then
check the status register until it indicates that the
erase operation has been suspended. Next write
the desired Lock command sequence to a block
and the protection status will be changed. After
completing any desired lock, read, or program op-
erations, resume the erase operation with the
Erase Resume command.
The following sections explain the operation of the
locking system.
Locked State
The default status of all blocks on power-up or af-
ter a hardware reset is Locked (states (0,0,1) or
(1,0,1)). Locked blocks are fully protected from
any program or erase. Any program or erase oper-
ations attempted on a locked block will return an
error in the Status Register. The Status of a
Locked block can be changed to Unlocked or
Lock-Down using the appropriate software com-
mands. An Unlocked block can be Locked by issu-
ing the Lock command.
If a block is locked or locked-down during an erase
suspend of the same block, the locking status bits
will be changed immediately, but when the erase
is resumed, the erase operation will complete.
Unlocked State
Locking operations cannot be performed during a
program suspend. Refer to Appendix D, Com-
mand Interface and Program/Erase Controller
State, for detailed information on which com-
mands are valid during erase suspend.
Unlocked blocks (states (0,0,0), (1,0,0) (1,1,0)),
can be programmed or erased. All unlocked
blocks return to the Locked state after a hardware
reset or when the device is powered-down. The
status of an unlocked block can be changed to
Locked or Locked-Down using the appropriate
16/50
M28R400CT, M28R400CB
Table 8. Block Lock Status
Item
Address
Data
Block Lock Configuration
LOCK
Block is Unlocked
Block is Locked
DQ0=0
DQ0=1
DQ1=1
xx002
Block is Locked-Down
Table 9. Protection Status
Current
(1)
Next Protection Status
(WP, DQ1, DQ0)
(1)
Protection Status
(WP, DQ1, DQ0)
After
Block Lock
Command
After
Block Unlock
Command
After Block
Lock-Down
Command
Program/Erase
Allowed
After
WP transition
Current State
1,0,0
yes
no
1,0,1
1,0,1
1,1,1
1,1,1
0,0,1
0,0,1
1,0,0
1,0,0
1,1,0
1,1,0
0,0,0
0,0,0
1,1,1
1,1,1
1,1,1
1,1,1
0,1,1
0,1,1
0,0,0
0,0,1
0,1,1
0,1,1
1,0,0
1,0,1
(2)
1,0,1
1,1,0
1,1,1
0,0,0
yes
no
yes
no
(2)
0,0,1
(3)
0,1,1
no
0,1,1
0,1,1
0,1,1
1,1,1 or 1,1,0
Note: 1. The protection status is defined by the write protect pin and by DQ1 (‘1’ for a locked-down block) and DQ0 (‘1’ for a locked block)
as read in the Read Electronic Signature command with A1 = V and A0 = V .
IH
IL
2. All blocks are locked at power-up, so the default configuration is 001 or 101 according to WP status.
3. A WP transition to V on a locked block will restore the previous DQ0 value, giving a 111 or 110.
IH
17/50
M28R400CT, M28R400CB
STATUS REGISTER
The Status Register provides information on the
current or previous Program or Erase operation.
The various bits convey information and errors on
the operation. To read the Status register the
Read Status Register command can be issued, re-
fer to Read Status Register Command section. To
output the contents, the Status Register is latched
on the falling edge of the Chip Enable or Output
Enable signals, and can be read until Chip Enable
When a Program/Erase Resume command is is-
sued the Erase Suspend Status bit returns Low.
Erase Status (Bit 5). The Erase Status bit can be
used to identify if the memory has failed to verify
that the block has erased correctly. When the
Erase Status bit is High (set to ‘1’), the Program/
Erase Controller has applied the maximum num-
ber of pulses to the block and still failed to verify
that the block has erased correctly. The Erase Sta-
tus bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
or Output Enable returns to V . Either Chip En-
IH
able or Output Enable must be toggled to update
the latched data.
Bus Read operations from any address always
read the Status Register during Program and
Erase operations.
Once set High, the Erase Status bit can only be re-
set Low by a Clear Status Register command or a
hardware reset. If set High it should be reset be-
fore a new Program or Erase command is issued,
otherwise the new command will appear to fail.
Program Status (Bit 4). The Program Status bit
is used to identify a Program failure. When the
Program Status bit is High (set to ‘1’), the Pro-
gram/Erase Controller has applied the maximum
number of pulses to the byte and still failed to ver-
ify that it has programmed correctly. The Program
Status bit should be read once the Program/Erase
Controller Status bit is High (Program/Erase Con-
troller inactive).
The bits in the Status Register are summarized in
Table 10, Status Register Bits. Refer to Table 10
in conjunction with the following text descriptions.
Program/Erase Controller Status (Bit 7). The Pro-
gram/Erase Controller Status bit indicates whether
the Program/Erase Controller is active or inactive.
When the Program/Erase Controller Status bit is
Low (set to ‘0’), the Program/Erase Controller is
active; when the bit is High (set to ‘1’), the Pro-
gram/Erase Controller is inactive, and the device
is ready to process a new command.
The Program/Erase Controller Status is Low im-
mediately after a Program/Erase Suspend com-
mand is issued until the Program/Erase Controller
pauses. After the Program/Erase Controller paus-
es the bit is High .
Once set High, the Program Status bit can only be
reset Low by a Clear Status Register command or
a hardware reset. If set High it should be reset be-
fore a new command is issued, otherwise the new
command will appear to fail.
During Program, Erase, operations the Program/
Erase Controller Status bit can be polled to find the
end of the operation. Other bits in the Status Reg-
ister should not be tested until the Program/Erase
Controller completes the operation and the bit is
High.
V
Status (Bit 3). The V
Status bit can be
PP
PP
used to identify an invalid voltage on the V pin
during Program and Erase operations. The V
pin is only sampled at the beginning of a Program
or Erase operation. Indeterminate results can oc-
PP
PP
cur if V becomes invalid during an operation.
PP
After the Program/Erase Controller completes its
When the V Status bit is Low (set to ‘0’), the volt-
PP
operation the Erase Status, Program Status, V
age on the V pin was sampled at a valid voltage;
PP
PP
Status and Block Lock Status bits should be tested
for errors.
Erase Suspend Status (Bit 6). The Erase Sus-
pend Status bit indicates that an Erase operation
has been suspended or is going to be suspended.
When the Erase Suspend Status bit is High (set to
‘1’), a Program/Erase Suspend command has
been issued and the memory is waiting for a Pro-
gram/Erase Resume command.
The Erase Suspend Status should only be consid-
ered valid when the Program/Erase Controller Sta-
tus bit is High (Program/Erase Controller inactive).
Bit 7 is set within 30µs of the Program/Erase Sus-
pend command being issued therefore the memo-
ry may still complete the operation rather than
entering the Suspend mode.
Program Suspend Status (Bit 2). The Program
Suspend Status bit indicates that a Program oper-
ation has been suspended. When the Program
Suspend Status bit is High (set to ‘1’), a Program/
Erase Suspend command has been issued and
the memory is waiting for a Program/Erase Re-
sume command. The Program Suspend Status
should only be considered valid when the Pro-
18/50
M28R400CT, M28R400CB
gram/Erase Controller Status bit is High (Program/
Erase Controller inactive). Bit 2 is set within 5µs of
the Program/Erase Suspend command being is-
sued therefore the memory may still complete the
operation rather than entering the Suspend mode.
When a Program/Erase Resume command is is-
sued the Program Suspend Status bit returns Low.
Block Protection Status (Bit 1). The Block Pro-
tection Status bit can be used to identify if a Pro-
gram or Erase operation has tried to modify the
contents of a locked block.
When the Block Protection Status bit is High (set
to ‘1’), a Program or Erase operation has been at-
tempted on a locked block.
Once set High, the Block Protection Status bit can
only be reset Low by a Clear Status Register com-
mand or a hardware reset. If set High it should be
reset before a new command is issued, otherwise
the new command will appear to fail.
Reserved (Bit 0). Bit 0 of the Status Register is
reserved. Its value must be masked.
Note: Refer to Appendix C, Flowcharts and
Pseudo Codes, for using the Status Register.
Table 10. Status Register Bits
Bit
Name
Logic Level
Definition
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
’1’
’0’
Ready
7
P/E.C. Status
Busy
Suspended
6
5
4
3
2
Erase Suspend Status
Erase Status
In progress or Completed
Erase Error
Erase Success
Program Error
Program Status
Program Success
V
V
Invalid, Abort
OK
PP
PP
V
PP
Status
Suspended
Program Suspend Status
In Progress or Completed
Program/Erase on protected Block, Abort
No operation to protected blocks
1
0
Block Protection Status
Reserved
Note: Logic level ’1’ is High, ’0’ is Low.
19/50
M28R400CT, M28R400CB
MAXIMUM RATING
Stressing the device above the rating listed in the
Absolute Maximum Ratings table may cause per-
manent damage to the device. These are stress
ratings only and operation of the device at these or
any other conditions above those indicated in the
Operating sections of this specification is not im-
plied. Exposure to Absolute Maximum Rating con-
ditions for extended periods may affect device
reliability. Refer also to the STMicroelectronics
SURE Program and other relevant quality docu-
ments.
Table 11. Absolute Maximum Ratings
Value
Symbol
Parameter
Unit
Min
– 40
– 40
– 55
– 0.5
– 0.5
– 0.5
Max
85
(1)
T
°C
°C
°C
V
A
Ambient Operating Temperature
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
T
125
155
BIAS
T
STG
V
IO
V
+ 0.5
DDQ
V
, V
DD DDQ
2.7
13
V
V
PP
Program Voltage
V
t
Time for V at V
PPH
100
hours
VPPH
PP
Note: 1. Depends on range.
20/50
M28R400CT, M28R400CB
DC AND AC PARAMETERS
This section summarizes the operating and mea-
surement conditions, and the DC and AC charac-
teristics of the device. The parameters in the DC
and AC characteristics Tables that follow, are de-
rived from tests performed under the Measure-
ment Conditions summarized in Table 12,
Operating and AC Measurement Conditions. De-
signers should check that the operating conditions
in their circuit match the measurement conditions
when relying on the quoted parameters.
Table 12. Operating and AC Measurement Conditions
M28R400CT, M28R400CB
Parameter
90
120
Units
Min
Max
Min
Max
V
V
Supply Voltage
1.7
2.0
1.65
2.2
V
V
DD
1.7
2.0
1.65
2.2
Supply Voltage (V
≤ V
)
DDQ
DDQ
DD
Ambient Operating Temperature
– 40
85
– 40
85
°C
pF
ns
V
Load Capacitance (C )
30
30
L
Input Rise and Fall Times
Input Pulse Voltages
10
10
0 to V
0 to V
DDQ
DDQ
V /2
DDQ
V
/2
DDQ
Input and Output Timing Ref. Voltages
V
Figure 6. AC Measurement I/O Waveform
Figure 7. AC Measurement Load Circuit
V
DDQ
V
DDQ
V
/2
DDQ
V
DDQ
V
0V
DD
25kΩ
AI00610
DEVICE
UNDER
TEST
C
L
25kΩ
0.1µF
0.1µF
C
includes JIG capacitance
AI00609C
L
Table 13. Capacitance
Symbol
Parameter
Input Capacitance
Output Capacitance
Test Condition
Min
Max
6
Unit
pF
C
V
= 0V
= 0V
IN
IN
C
OUT
V
OUT
12
pF
Note: Sampled only, not 100% tested.
21/50
M28R400CT, M28R400CB
Table 14. DC Characteristics
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Test Condition
Min
Typ
Max
±1
Unit
µA
I
0V≤ V ≤ V
LI
IN
DDQ
I
0V≤ V
≤V
±10
20
µA
LO
OUT DDQ
I
E = V , G = V , f = 5MHz
10
15
mA
DD
SS
IH
E = V
± 0.2V,
Supply Current (Stand-by or
Automatic Stand-by)
DDQ
I
50
50
20
20
20
20
50
400
µA
µA
DD1
RP = V
± 0.2V
DDQ
Supply Current
(Reset)
I
RP = V ± 0.2V
15
10
10
5
DD2
SS
Program in progress
mA
mA
mA
mA
µA
V
PP
= 12V ± 5%
I
Supply Current (Program)
Supply Current (Erase)
DD3
Program in progress
= V
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
DD4
Erase in progress
= V
5
V
PP
DD
E = V
± 0.2V,
Supply Current
(Program/Erase Suspend)
DDQ
I
DD5
Erase suspended
Program Current
(Read or Stand-by)
I
V
> V
µA
PP
PP
PP
DD
Program Current
(Read or Stand-by)
I
V
≤ V
5
5
µA
µA
PP1
DD
I
RP = V ± 0.2V
Program Current (Reset)
PP2
SS
Program in progress
10
mA
V
PP
= 12V ± 5%
I
Program Current (Program)
PP3
Program in progress
= V
5
µA
mA
µA
V
PP
DD
Erase in progress
= 12V ± 5%
10
V
PP
I
Program Current (Erase)
PP4
Erase in progress
= V
5
V
PP
DD
V
Input Low Voltage
Input High Voltage
–0.5
0.4
V
V
IL
V
IH
V
V
–0.4
V
+0.4
DDQ
DDQ
I
= 100µA, V = V min,
DD DD
OL
V
OL
Output Low Voltage
Output High Voltage
0.1
V
V
V
V
= V
min
DDQ
DDQ
I
= –100µA, V = V min,
DD DD
OH
V
OH
–0.1
DDQ
V
DDQ
= V
min
DDQ
Program Voltage (Program or
Erase operations)
V
1.65
2.2
PP1
Program Voltage
(Program or Erase
operations)
V
PPH
11.4
12.6
V
Program Voltage
(Program and Erase lock-out)
V
1
2
V
V
PPLK
V
DD
Supply Voltage (Program
V
LKO
and Erase lock-out)
22/50
M28R400CT, M28R400CB
Figure 8. Read AC Waveforms
tAVAV
VALID
A0-A17
E
tAVQV
tAXQX
tELQV
tELQX
tEHQX
tEHQZ
G
tGLQV
tGHQX
tGHQZ
tGLQX
VALID
DQ0-DQ15
ADDR. VALID
CHIP ENABLE
OUTPUTS
ENABLED
DATA VALID
STANDBY
AI04144b
Table 15. Read AC Characteristics
M28R400C
Unit
Symbol
Alt
Parameter
90
90
90
120
120
120
t
t
Address Valid to Next Address Valid
Address Valid to Output Valid
Min
Max
Min
ns
ns
ns
AVAV
RC
t
t
ACC
AVQV
(1)
t
Address Transition to Output Transition
0
0
0
0
t
OH
AXQX
EHQX
EHQZ
(1)
(1)
(2)
(1)
(1)
(1)
(2)
(1)
t
Chip Enable High to Output Transition
Chip Enable High to Output Hi-Z
Min
Max
Max
Min
Min
Max
Max
Min
ns
ns
ns
ns
ns
ns
ns
ns
t
t
OH
t
25
90
0
30
120
0
HZ
t
Chip Enable Low to Output Valid
t
t
CE
ELQV
ELQX
t
Chip Enable Low to Output Transition
Output Enable High to Output Transition
Output Enable High to Output Hi-Z
Output Enable Low to Output Valid
Output Enable Low to Output Transition
LZ
t
0
0
t
OH
GHQX
t
25
30
0
30
35
0
t
DF
GHQZ
t
t
t
OE
GLQV
t
OLZ
GLQX
Note: 1. Sampled only, not 100% tested.
2. G may be delayed by up to t
- t
after the falling edge of E without increasing t
.
ELQV
ELQV GLQV
23/50
M28R400CT, M28R400CB
Figure 9. Write AC Waveforms, Write Enable Controlled
24/50
M28R400CT, M28R400CB
Table 16. Write AC Characteristics, Write Enable Controlled
M28R400C
Unit
Symbol
Alt
Parameter
90
90
50
50
0
120
120
50
t
t
WC
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
t
t
Address Valid to Write Enable High
Data Valid to Write Enable High
Chip Enable Low to Write Enable Low
Chip Enable Low to Output Valid
AVWH
AS
DS
CS
t
t
t
50
DVWH
t
0
ELWL
t
90
120
ELQV
(1,2)
Output Valid to V Low
0
0
0
0
t
PP
QVVPL
t
Output Valid to Write Protect Low
QVWPL
(1)
t
V
PP
High to Write Enable High
200
0
200
0
t
VPS
VPHWH
t
t
t
t
Write Enable High to Address Transition
Write Enable High to Data Transition
Write Enable High to Chip Enable High
Write Enable High to Chip Enable Low
Write Enable High to Output Enable Low
Write Enable High to Write Enable Low
Write Enable Low to Write Enable High
Write Protect High to Write Enable High
WHAX
WHDX
WHEH
AH
DH
CH
t
t
0
0
0
0
t
t
30
30
30
50
50
30
30
30
50
50
WHEL
WHGL
WHWL
t
t
WPH
t
t
WLWH
WP
t
WPHWH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 2.2V).
PP
PP
25/50
M28R400CT, M28R400CB
Figure 10. Write AC Waveforms, Chip Enable Controlled
26/50
M28R400CT, M28R400CB
Table 17. Write AC Characteristics, Chip Enable Controlled
M28R400C
Unit
Symbol
Alt
Parameter
90
90
50
50
0
120
120
50
50
0
t
t
WC
Write Cycle Time
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
AVAV
t
t
Address Valid to Chip Enable High
Data Valid to Chip Enable High
AVEH
AS
DS
AH
t
t
t
t
DVEH
t
Chip Enable High to Address Transition
Chip Enable High to Data Transition
Chip Enable High to Chip Enable Low
Chip Enable High to Output Enable Low
Chip Enable High to Write Enable High
Chip Enable Low to Chip Enable High
Chip Enable Low to Output Valid
EHAX
t
0
0
EHDX
DH
t
t
CPH
30
30
0
30
30
0
EHEL
t
EHGL
t
t
WH
EHWH
t
t
CP
50
90
50
120
ELEH
t
ELQV
(1,2)
Output Valid to V Low
Min
Min
Min
Min
Min
0
0
0
0
ns
ns
ns
ns
ns
t
PP
QVVPL
t
Data Valid to Write Protect Low
QVWPL
(1)
t
V
PP
High to Chip Enable High
200
0
200
0
t
VPS
VPHEH
t
t
CS
Write Enable Low to Chip Enable Low
Write Protect High to Chip Enable High
WLEL
t
50
50
WPHEH
Note: 1. Sampled only, not 100% tested.
2. Applicable if V is seen as a logic input (V < 2.2V).
PP
PP
27/50
M28R400CT, M28R400CB
Figure 11. Power-Up and Reset AC Waveforms
W, E, G
tPHWL
tPHEL
tPHGL
tPHWL
tPHEL
tPHGL
RP
tVDHPH
tPLPH
Reset
VDD, VDDQ
Power-Up
AI03537b
Table 18. Power-Up and Reset AC Characteristics
M28R400C
Symbol
Parameter
Test Condition
Unit
90
120
During
Program and
Erase
t
t
PHWL
Min
Min
50
50
µs
Reset High to Write Enable Low, Chip Enable Low,
Output Enable Low
t
PHEL
PHGL
others
30
30
ns
ns
(1,2)
(3)
Reset Low to Reset High
Min
Min
100
100
t
PLPH
Supply Voltages High to Reset High
50
50
µs
t
VDHPH
Note: 1. The device Reset is possible but not guaranteed if t
2. Sampled only, not 100% tested.
< 100ns.
PLPH
3. It is important to assert RP in order to allow proper CPU initialization during power up or reset.
28/50
M28R400CT, M28R400CB
PACKAGE MECHANICAL
Figure 12. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75 mm pitch, Bottom View Package Outline
D
D1
FD
SD
FE
E1
SE
E
e
ddd
BALL "A1"
e
b
A
A2
A1
BGA-Z13
Note: Drawing is not to scale.
Table 19. TFBGA46 6.39x6.37mm - 8x6 ball array, 0.75 mm pitch, Package Mechanical Data
millimeters
Min
inches
Min
Symbol
Typ
Max
Typ
Max
A
A1
A2
b
1.200
0.0472
0.200
0.0079
1.000
0.0394
0.400
6.390
5.250
0.350
6.290
–
0.450
0.0157
0.2516
0.2067
0.0138
0.2476
–
0.0177
D
6.490
0.2555
D1
ddd
E
–
–
0.100
0.0039
6.370
0.750
3.750
0.570
1.310
0.375
0.375
6.270
6.470
0.2508
0.0295
0.1476
0.0224
0.0516
0.0148
0.0148
0.2469
0.2547
e
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
E1
FD
FE
SD
SE
29/50
M28R400CT, M28R400CB
Figure 13. TFBGA46 Daisy Chain - Package Connections (Top view through package)
1
2
3
4
5
6
7
8
A
B
C
D
E
F
AI03860
Figure 14. TFBGA46 Daisy Chain - PCB Connections proposal (Top view through package)
1
2
3
4
5
6
7
8
START
POINT
A
B
C
D
E
F
END
POINT
AI03861
30/50
M28R400CT, M28R400CB
PART NUMBERING
Table 20. Ordering Information Scheme
Example:
M28R400CT
120 ZB
6
T
Device Type
M28
Operating Voltage
R = V = 1.65V to 2.2V; V
= 1.65V or 2.2V
DDQ
DD
Device Function
400C = 4 Mbit (256Kb x16), Boot Block
Array Matrix
T = Top Boot
B = Bottom Boot
Speed
90 = 90ns
120 = 120ns
Package
ZB = TFBGA46: 0.75mm pitch
Temperature Range
1 = 0 to 70 °C
6 = –40 to 85 °C
Option
T = Tape & Reel Packing
Table 21. Daisy Chain Ordering Scheme
Example:
M28R400C
-ZB T
Device Type
M28R400C
Daisy Chain
-ZB = TFBGA46: 0.75 mm pitch
Option
T = Tape & Reel Packing
Note:Devices are shipped from the factory with the memory content bits erased to ’1’. For a list of available
options (Speed, Package, etc.) or for further information on any aspect of this device, please contact
the ST Sales Office nearest to you.
31/50
M28R400CT, M28R400CB
APPENDIX A. BLOCK ADDRESS TABLES
Table 22. Top Boot Block Addresses,
M28R400CT
Table 23. Bottom Boot Block Addresses,
M28R400CB
Size
(KWord)
Size
(KWord)
#
Address Range
#
Address Range
0
1
4
4
3F000-3FFFF
3E000-3EFFF
3D000-3DFFF
3C000-3CFFF
3B000-3BFFF
3A000-3AFFF
39000-39FFF
38000-38FFF
30000-37FFF
28000-2FFFF
20000-27FFF
18000-1FFFF
10000-17FFF
08000-0FFFF
00000-07FFF
14
13
12
11
10
9
32
32
32
32
32
32
32
4
38000-3FFFF
30000-37FFF
28000-2FFFF
20000-27FFF
18000-1FFFF
10000-17FFF
08000-0FFFF
07000-07FFF
06000-06FFF
05000-05FFF
04000-04FFF
03000-03FFF
02000-02FFF
01000-01FFF
00000-00FFF
2
4
3
4
4
4
5
4
6
4
8
7
4
7
8
32
32
32
32
32
32
32
6
4
9
5
4
10
11
12
13
14
4
4
3
4
2
4
1
4
0
4
32/50
M28R400CT, M28R400CB
APPENDIX B. COMMON FLASH INTERFACE (CFI)
The Common Flash Interface is a JEDEC ap-
proved, standardized data structure that can be
read from the Flash memory device. It allows a
system software to query the device to determine
various electrical and timing parameters, density
information and functions supported by the mem-
ory. The system can interface easily with the de-
vice, enabling the software to upgrade itself when
necessary.
structure is read from the memory. Tables 24, 25,
26, 27, 28 and 29 show the addresses used to re-
trieve the data.
The CFI data structure also contains a security
area where a 64 bit unique security number is writ-
ten (see Table 29, Security Code area). This area
can be accessed only in Read mode by the final
user. It is impossible to change the security num-
ber after it has been written by ST. Issue a Read
command to return to Read mode.
When the CFI Query Command (RCFI) is issued
the device enters CFI Query mode and the data
Table 24. Query Structure Overview
Offset
00h
Sub-section Name
Description
Reserved for algorithm-specific information
Command set ID and algorithm data offset
Device timing & voltage information
Flash device layout
Reserved
10h
CFI Query Identification String
System Interface Information
Device Geometry Definition
1Bh
27h
Additional information specific to the Primary
Algorithm (optional)
P
A
Primary Algorithm-specific Extended Query table
Alternate Algorithm-specific Extended Query table
Additional information specific to the Alternate
Algorithm (optional)
Note: Query data are always presented on the lowest order data outputs.
Table 25. CFI Query Identification String
Offset
Data
Description
Value
00h
0020h
Manufacturer Code
Device Code
ST
882Ah
882Bh
Top
Bottom
01h
02h-0Fh
10h
reserved Reserved
0051h
"Q"
"R"
"Y"
11h
0052h
0059h
0003h
0000h
0035h
0000h
0000h
0000h
0000h
0000h
Query Unique ASCII String "QRY"
12h
13h
Primary Algorithm Command Set and Control Interface ID code 16 bit ID code
defining a specific algorithm
Intel
compatible
14h
15h
Address for Primary Algorithm extended Query table (see Table 27)
P = 35h
NA
16h
17h
Alternate Vendor Command Set and Control Interface ID Code second vendor -
specified algorithm supported (0000h means none exists)
18h
19h
Address for Alternate Algorithm extended Query table
(0000h means none exists)
NA
1Ah
Note: Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.
33/50
M28R400CT, M28R400CB
Table 26. CFI Query System Interface Information
Offset
Data
Description
Value
V
DD
V
DD
V
PP
V
PP
Logic Supply Minimum Program/Erase or Write voltage
1Bh
0017h
1.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
1Ch
1Dh
1Eh
0022h
00B4h
00C6h
2.2V
11.4V
12.6V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
000Ch
0005h
0005h
0003h
0003h
16µs
16µs
1s
Typical time-out per single word program = 2 µs
n
Typical time-out for Double Word Program = 2 µs
n
Typical time-out per individual block erase = 2 ms
n
4s
Typical time-out for full chip erase = 2 ms
n
512µs
512µs
8s
Maximum time-out for word program = 2 times typical
n
Maximum time-out for Double Word Program = 2 times typical
n
Maximum time-out per individual block erase = 2 times typical
n
32s
Maximum time-out for chip erase = 2 times typical
34/50
M28R400CT, M28R400CB
Table 27. Device Geometry Definition
Offset Word
Data
Description
Value
Mode
n
27h
0013h
512 MByte
Device Size = 2 in number of bytes
28h
29h
0001h
0000h
x16
Async.
Flash Device Interface Code description
2Ah
2Bh
0002h
0000h
n
4
2
Maximum number of bytes in multi-byte program or page = 2
Number of Erase Block Regions within the device.
It specifies the number of regions within the device containing contiguous
Erase Blocks of the same size.
2Ch
0002h
2Dh
2Eh
0006h
0000h
Region 1 Information
Number of identical-size erase block = 0006h+1
7
64 KByte
8
2Fh
30h
0000h
0001h
Region 1 Information
Block size in Region 1 = 0100h * 256 byte
31h
32h
0007h
0000h
Region 2 Information
Number of identical-size erase block = 0007h+1
33h
34h
0020h
0000h
Region 2 Information
Block size in Region 2 = 0020h * 256 byte
8 KByte
8
2Dh
2Eh
0007h
0000h
Region 1 Information
Number of identical-size erase block = 0007h+1
2Fh
30h
0020h
0000h
Region 1 Information
Block size in Region 1 = 0020h * 256 byte
8 KByte
7
31h
32h
0006h
0000h
Region 2 Information
Number of identical-size erase block = 0006h+1
33h
34h
0000h
0001h
Region 2 Information
Block size in Region 2 = 0100h * 256 byte
64 KByte
35/50
M28R400CT, M28R400CB
Table 28. Primary Algorithm-Specific Extended Query Table
Offset
Data
Description
Value
(1)
P = 35h
(P+0)h = 35h
(P+1)h = 36h
(P+2)h = 37h
(P+3)h = 38h
(P+4)h = 39h
(P+5)h = 3Ah
(P+6)h = 3Bh
(P+7)h = 3Ch
(P+8)h = 3Dh
0050h
0052h
0049h
0031h
0030h
0067h
0000h
0000h
0000h
"P"
"R"
"I"
Primary Algorithm extended Query table unique ASCII string “PRI”
Major version number, ASCII
Minor version number, ASCII
"1"
"0"
Extended Query table contents for Primary Algorithm. Address (P+5)h
contains less significant byte.
bit 0
bit 1
bit 2
bit 3
bit 4
bit 5
bit 6
bit 7
bit 8
Chip Erase supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
Yes
Yes
Yes
No
Suspend Erase supported
Suspend Program supported
Legacy Lock/Unlock supported
Queued Erase supported
No
Instant individual block locking supported (1 = Yes, 0 = No)
Yes
Yes
No
Protection bits supported
Page mode read supported
Synchronous read supported
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
(1 = Yes, 0 = No)
No
bit 31 to 9 Reserved; undefined bits are ‘0’
(P+9)h = 3Eh
0001h
Supported Functions after Suspend
Read Array, Read Status Register and CFI Query are always supported
during Erase or Program operation
bit 0
bit 7 to 1
Program supported after Erase Suspend (1 = Yes, 0 = No)
Reserved; undefined bits are ‘0’
Yes
(P+A)h = 3Fh
(P+B)h = 40h
0003h
0000h
Block Lock Status
Defines which bits in the Block Status Register section of the Query are
implemented.
Address (P+A)h contains less significant byte
bit 0 Block Lock Status Register Lock/Unlock bit active(1 = Yes, 0 = No)
bit 1 Block Lock Status Register Lock-Down bit active (1 = Yes, 0 = No)
bit 15 to 2 Reserved for future use; undefined bits are ‘0’
Yes
Yes
(P+C)h = 41h
(P+D)h = 42h
(P+E)h = 43h
0022h
00C0h
0001h
V
V
Logic Supply Optimum Program/Erase voltage (highest performance)
2.2V
12V
01
DD
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Supply Optimum Program/Erase voltage
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
Number of Protection register fields in JEDEC ID space.
"00h," indicates that 256 protection bytes are available
(P+F)h = 44h
(P+10)h = 45h
(P+11)h = 46h
(P+12)h = 47h
0080h
0000h
0003h
0003h
Protection Field 1: Protection Description
80h
00h
This field describes user-available. One Time Programmable (OTP)
Protection register bytes. Some are pre-programmed with device unique
serial numbers. Others are user programmable. Bits 0–15 point to the
Protection register Lock byte, the section’s first byte.
8 Byte
8 Byte
The following bytes are factory pre-programmed and user-programmable.
bit 0 to 7
Lock/bytes JEDEC-plane physical low address
bit 8 to 15
Lock/bytes JEDEC-plane physical high address
n
bit 16 to 23 "n" such that 2 = factory pre-programmed bytes
n
bit 24 to 31 "n" such that 2 = user programmable bytes
(P+13)h = 48h
Reserved
Note: 1. See Table 25, offset 15 for P pointer definition.
36/50
M28R400CT, M28R400CB
Table 29. Security Code Area
Offset
80h
81h
82h
83h
84h
85h
86h
87h
88h
Data
00XX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
XXXX
Description
Protection Register Lock
64 bits: unique device number
64 bits: User Programmable OTP
37/50
M28R400CT, M28R400CB
APPENDIX C. FLOWCHARTS AND PSEUDO CODES
Figure 15. Program Flowchart and Pseudo Code
Start
program_command (addressToProgram, dataToProgram) {:
Write 40h or 10h
writeToFlash (any_address, 0x40) ;
/*or writeToFlash (any_address, 0x10) ; */
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
NO
NO
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03538b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
38/50
M28R400CT, M28R400CB
Figure 16. Double Word Program Flowchart and Pseudo Code
Start
Write 30h
double_word_program_command (addressToProgram1, dataToProgram1,
addressToProgram2, dataToProgram2)
{
writeToFlash (any_address, 0x30) ;
writeToFlash (addressToProgram1, dataToProgram1) ;
/*see note (3) */
Write Address 1
& Data 1 (3)
writeToFlash (addressToProgram2, dataToProgram2) ;
/*see note (3) */
/*Memory enters read status state after
the Program command*/
Write Address 2
& Data 2 (3)
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
Program
b4 = 0
YES
Error (1, 2)
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03539b
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase operations.
3. Address 1 and Address 2 must be consecutive addresses differing only for bit A0.
39/50
M28R400CT, M28R400CB
Figure 17. Program Suspend & Resume Flowchart and Pseudo Code
Start
program_suspend_command ( ) {
writeToFlash (any_address, 0xB0) ;
Write B0h
Write 70h
writeToFlash (any_address, 0x70) ;
/* read status register to check if
program has already completed */
do {
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
Read Status
Register
NO
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
b2 = 1
YES
Program Complete
if (status_register.b2==0) /*program completed */
{ writeToFlash (any_address, 0xFF) ;
read_data ( ) ; /*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
}
Read data from
another address
else
{ writeToFlash (any_address, 0xFF) ;
read_data ( ); /*read data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume program*/
Write D0h
Write FFh
Read Data
}
}
Program Continues
AI03540b
40/50
M28R400CT, M28R400CB
Figure 18. Block Erase Flowchart and Pseudo Code
Start
erase_command ( blockToErase ) {
writeToFlash (any_address, 0x20) ;
Write 20h
writeToFlash (blockToErase, 0xD0) ;
/* only A12-A20 are significannt */
/* Memory enters read status state after
the Erase Command */
Write Block
Address & D0h
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
YES
NO
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
Error (1)
b3 = 0
YES
if ( (status_register.b4==1) && (status_register.b5==1) )
/* command sequence error */
Command
Sequence Error (1)
b4, b5 = 1
NO
error_handler ( ) ;
if ( (status_register.b5==1) )
/* erase error */
b5 = 0
YES
Erase Error (1)
error_handler ( ) ;
Erase to Protected
Block Error (1)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI03541b
Note: If an error is found, the Status Register must be cleared before further Program/Erase operations.
41/50
M28R400CT, M28R400CB
Figure 19. Erase Suspend & Resume Flowchart and Pseudo Code
Start
erase_suspend_command ( ) {
Write B0h
Write 70h
writeToFlash (any_address, 0xB0) ;
writeToFlash (any_address, 0x70) ;
/* read status register to check if
erase has already completed */
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
NO
} while (status_register.b7== 0) ;
b7 = 1
YES
if (status_register.b6==0) /*erase completed */
{ writeToFlash (any_address, 0xFF) ;
b6 = 1
YES
Erase Complete
read_data ( ) ;
/*read data from another block*/
/*The device returns to Read Array
(as if program/erase suspend was not issued).*/
Write FFh
Read data from
another block
or
Program/Protection Program
or
Block Protect/Unprotect/Lock
}
else
{ writeToFlash (any_address, 0xFF) ;
read_program_data ( );
Write D0h
Write FFh
Read Data
/*read or program data from another address*/
writeToFlash (any_address, 0xD0) ;
/*write 0xD0 to resume erase*/
}
}
Erase Continues
AI03542b
42/50
M28R400CT, M28R400CB
Figure 20. Locking Operations Flowchart and Pseudo Code
Start
locking_operation_command (address, lock_operation) {
writeToFlash (any_address, 0x60) ; /*configuration setup*/
Write 60h
if (lock_operation==LOCK) /*to protect the block*/
writeToFlash (address, 0x01) ;
else if (lock_operation==UNLOCK) /*to unprotect the block*/
writeToFlash (address, 0xD0) ;
Write
01h, D0h or 2Fh
else if (lock_operation==LOCK-DOWN) /*to lock the block*/
writeToFlash (address, 0x2F) ;
writeToFlash (any_address, 0x90) ;
Write 90h
Read Block
Lock States
if (readFlash (address) ! = locking_state_expected)
error_handler () ;
NO
Locking
change
/*Check the locking state (see Read Block Signature table )*/
confirmed?
YES
writeToFlash (any_address, 0xFF) ; /*Reset to Read Array mode*/
Write FFh
}
End
AI04364
43/50
M28R400CT, M28R400CB
Figure 21. Protection Register Program Flowchart and Pseudo Code
Start
protection_register_program_command (addressToProgram, dataToProgram) {:
Write C0h
writeToFlash (any_address, 0xC0) ;
writeToFlash (addressToProgram, dataToProgram) ;
/*Memory enters read status state after
the Program Command*/
Write Address
& Data
do {
Read Status
Register
status_register=readFlash (any_address) ;
/* E or G must be toggled*/
NO
b7 = 1
YES
} while (status_register.b7== 0) ;
NO
V
Invalid
if (status_register.b3==1) /*VPP invalid error */
error_handler ( ) ;
PP
b3 = 0
YES
Error (1, 2)
NO
NO
Program
Error (1, 2)
if (status_register.b4==1) /*program error */
error_handler ( ) ;
b4 = 0
YES
Program to Protected
Block Error (1, 2)
if (status_register.b1==1) /*program to protect block error */
error_handler ( ) ;
b1 = 0
YES
End
}
AI04381
Note: 1. Status check of b1 (Protected Block), b3 (V Invalid) and b4 (Program Error) can be made after each program operation or after
PP
a sequence.
2. If an error is found, the Status Register must be cleared before further Program/Erase Controller operations.
44/50
M28R400CT, M28R400CB
APPENDIX D. COMMAND INTERFACE AND PROGRAM/ERASE CONTROLLER STATE
Table 30. Write State Machine Current/Next, sheet 1 of 2.
Command Input (and Next State)
Data
When
Read
Block
Erase
Setup
(20h)
Current
State
SR
bit 7
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Confirm
(D0h)
Prog/Ers
Suspend
(B0h)
Prog/Ers
Resume
(D0h)
Read
Status
(70h)
Clear
Status
(50h)
Read Array
“1”
“1”
Array
Read Array Prog.Setup Ers. Setup
Read Array
Read Array
Read Sts. Read Array
Read
Status
Program
Setup
Erase
Setup
Read
Status
Read Array
Read Array
Read Array
Read Array
Status
Read
Elect.Sg.
Electronic
Signature
Program
Setup
Erase
Setup
Read
“1”
“1”
“1”
“1”
“1”
“1”
“0”
“1”
Read Array
Read Array
Read Array
Status
Read CFI
Query
Program
Setup
Erase
Setup
Read
CFI
Read Array
Status
Lock
(complete)
Lock Cmd
Error
Lock
(complete)
Lock Setup
Status
Status
Status
Status
Status
Lock Command Error
Lock Command Error
Lock Cmd
Error
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Read Array
Status
Lock
(complete)
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Status
Prot. Prog.
Setup
Protection Register Program
Protection Register Program continue
Prot. Prog.
(continue)
Prot. Prog.
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Read Array
Program
Read Array
Status
Prog. Setup “1”
Program
“0”
Prog. Sus
Read Sts
Program (continue)
Program (continue)
(continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
Status
Array
Status
(continue) Read Array (continue)
Program Prog. Sus Program
(continue) Read Array (continue)
Prog. Sus
“1”
Prog. Sus
Read Array
Program Suspend to
Read Array
Prog. Sus Prog. Sus
Read Sts Read Array
Read Array
Prog. Sus
Read
Elect.Sg.
Electronic Prog. Sus
Signature Read Array
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
(continue) Read Array (continue)
Prog. Sus
Read CFI
Prog. Sus
CFI
Program Suspend to
Read Array
Program
Prog. Sus
Program
Prog. Sus Prog. Sus
Read Sts Read Array
“1”
“1”
“1”
“1”
“0”
Read Array
(continue) Read Array (continue)
Program
(complete)
Program
Setup
Erase
Setup
Read
Status
Status
Status
Status
Read Array
Read Array
Read Array
Status
BlockErase
Setup
Erase
Erase
Erase
Erase Command Error
Erase Command Error
(continue) CmdError (continue)
BlockErase
Cmd.Error
Program
Setup
Erase
Setup
Read
Read Array
Read Array
Read Array
Status
BlockErase
(continue)
Erase Sus
Read Sts
Block Erase (continue)
Block Erase (continue)
BlockErase
Sus Read
Sts
Erase Sus
Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
“1”
“1”
“1”
“1”
Status
Array
Read Array (continue) Read Array (continue)
BlockErase
Sus Read
Array
Erase Sus
Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
Read Array (continue) Read Array (continue)
BlockErase
Sus Read
Elect.Sg.
Electronic Erase Sus
Signature Read Array
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
Read Array (continue) Read Array (continue)
BlockErase
Sus Read
CFI
Erase Sus
CFI
Program
Setup
Erase Sus
Erase
Erase Sus
Erase
Erase Sus Erase Sus
Read Sts Read Array
Read Array
Read Array (continue) Read Array (continue)
45/50
M28R400CT, M28R400CB
Command Input (and Next State)
Data
When
Read
Block
Erase
Setup
(20h)
Current
State
SR
bit 7
Read
Array
(FFh)
Program
Setup
(10/40h)
Erase
Confirm
(D0h)
Prog/Ers
Suspend
(B0h)
Prog/Ers
Resume
(D0h)
Read
Status
(70h)
Clear
Status
(50h)
BlockErase
(complete)
Program
Setup
Erase
Setup
Read
Status
“1”
“1”
“1”
“0”
“1”
Status
Status
Status
Status
Status
Read Array
Read Array
Read Array
Read Array
Read Array
Chip Erase
Setup
Chip Erase
(continue)
Chip Erase Command Error
Chip Erase Command Error
Chip Erase
Cmd.Error
Program
Setup
Erase
Setup
Read
Status
Read Array
Read Array
Chip Erase
(continue)
Erase (continue)
Read Array
Chip Erase
(complete)
Program
Setup
Erase
Setup
Read
Status
Read Array
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Ers = Erase, Prog. = Program, Prot = Protection, Sus = Suspend.
46/50
M28R400CT, M28R400CB
Table 31. Write State Machine Current/Next, sheet 2 of 2.
Command Input (and Next State)
Read
Elect.Sg.
(90h)
Read CFI
Query
(98h)
Lock
Confirm
(01h)
Lock Down
Confirm
(2Fh)
Unlock
Confirm
(D0h)
Chip Erase
Set Up
Current State
Lock Setup
(60h)
Prot. Prog.
Setup (C0h)
(80h)
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Read Array
Read Status
Lock Setup
Lock Setup
Lock Setup
Lock Setup
Read Array
Read Array
Read Array
Read Array
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Read Elect.Sg.
Read CFI Query
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Lock
Command
Error
Lock Setup
Lock Command Error
Read CFI
Lock (complete)
Read
Elect.Sg.
Prot. Prog.
Setup
Chip Erase
Set Up
Lock Cmd Error
Lock (complete)
Lock Setup
Read Array
Read Array
Query
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Lock Setup
Prot. Prog.
Setup
Protection Register Program
Prot. Prog.
(continue)
Protection Register Program (continue)
Prot. Prog.
Prot. Prog.
(complete)
Read
Elect.Sg.
Read CFI
Query
Chip Erase
Set Up
Lock Setup
Read Array
Setup
Prog. Setup
Program
Program
(continue)
Program (continue)
Prog.
Suspend
Read
Prog.
Suspend
Read CFI
Query
Program
Suspend
Read Array
Prog. Suspend
Read Status
Program
(continue)
Program Suspend Read Array
Elect.Sg.
Prog.
Suspend
Read
Prog.
Suspend
Read CFI
Query
Program
Suspend
Read Array
Prog. Suspend
Read Array
Program
(continue)
Program Suspend Read Array
Program Suspend Read Array
Program Suspend Read Array
Elect.Sg.
Prog.
Suspend
Read
Prog.
Suspend
Read CFI
Query
Program
Suspend
Read Array
Prog. Suspend
Read Elect.Sg.
Program
(continue)
Elect.Sg.
Prog.
Suspend
Read
Prog.
Suspend
Read CFI
Query
Program
Suspend
Read Array
Prog. Suspend
Read CFI
Program
(continue)
Elect.Sg.
Program
(complete)
Read
Elect.Sg.
Read
CFIQuery
Prot. Prog.
Setup
Chip Erase
Set Up
Lock Setup
Read Array
Read Array
Block Erase
Command
Error
Block Erase
Setup
Erase
(continue)
Block Erase Command Error
Block Erase
Cmd.Error
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Lock Setup
Chip Erase
Set Up
Setup
Block Erase
(continue)
Block Erase (continue)
Erase
Suspend
Read
Erase
Suspend
Read CFI
Query
Block Erase
Suspend
Read Status
Erase
Suspend
Read Array
Erase
(continue)
Lock Setup
Erase Suspend Read Array
Elect.Sg.
47/50
M28R400CT, M28R400CB
Command Input (and Next State)
Lock
Read
Elect.Sg.
(90h)
Read CFI
Query
(98h)
Lock Down
Confirm
(2Fh)
Unlock
Confirm
(D0h)
Chip Erase
Set Up
Current State
Lock Setup
Prot. Prog.
Setup (C0h)
Confirm
(01h)
(60h)
(80h)
Erase
Suspend
Read
Erase
Suspend
Read CFI
Query
Block Erase
Suspend Read
Array
Erase
Suspend
Read Array
Erase
(continue)
Lock Setup
Erase Suspend Read Array
Erase Suspend Read Array
Erase Suspend Read Array
Elect.Sg.
Erase
Suspend
Read
Erase
Suspend
Read CFI
Query
Block Erase
Suspend Read
Elect.Sg.
Erase
Suspend
Read Array
Erase
(continue)
Lock Setup
Elect.Sg.
Erase
Suspend
Read
Erase
Suspend
Read CFI
Query
Block Erase
Suspend Read
CFI Query
Erase
Suspend
Read Array
Erase
(continue)
Lock Setup
Lock Setup
Elect.Sg.
Block Erase
(complete)
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Read Array
Chip Erase
Command
Error
Chip Erase
Setup
Erase
(continue)
Chip Erase Command Error
Chip Erase
Cmd.Error
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Lock Setup
Chip Erase
Set Up
Read Array
Read Array
Setup
Chip Erase
(continue)
Chip Erase (continue)
Chip Erase
(complete)
Read
Elect.Sg.
Read CFI
Query
Prot. Prog.
Setup
Chip Erase
Set Up
Lock Setup
Note: Cmd = Command, Elect.Sg. = Electronic Signature, Prog. = Program, Prot = Protection.
48/50
M28R400CT, M28R400CB
REVISION HISTORY
Table 32. Document Revision History
Date
Version
-01
Revision Details
January 2001
20-Feb-2001
First Issue
-02
Chip Erase Command added
TFBGA package connections modified
TFBGA package mechanical data and outline drawing modified
TFBGA package daisy chain drawings modified
27-Jul-2001
-03
Completely rewritten and restructured, document status changed to Preliminary
Data.
05-Mar-2002
03-Mar-2003
-04
4.1
Document status changed to Data Sheet
Revision numbering modified: a minor revision will be indicated by incrementing the
digit after the dot, and a major revision, by incrementing the digit before the dot
(revision version 04 equals 4.0). Revision History moved to end of document.
90ns Speed Class added. Chip Erase cycles limited to 100,000. t
parameter
VPPH
added to Table 11, Absolute Maximum Ratings.
49/50
M28R400CT, M28R400CB
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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50/50
相关型号:
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