MJD340 [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER TRANSISTORS; 互补硅功率晶体管
| 型号： | MJD340 |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER TRANSISTORS |
| 文件： | 总5页 (文件大小：68K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MJD340
MJD350
COMPLEMENTARY SILICON POWER TRANSISTORS
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■
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SGS-THOMSON PREFERRED SALESTYPES
COMPLEMENTARY PNP - NPN DEVICES
MEDIUM VOLTAGE CAPABILITY
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
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ELECTRICAL SIMILAR TO MJE340 AND
3
MJE350
1
APPLICATIONS
■
SOLENOID/RELAYDRIVERS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
■
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD340 and MJD350 form complementary
NPN - PNP pairs.
They are manufactured using Medium Voltage
Epitaxial Planar technology, resulting in a rugged
high performance cost-effectivetransistor.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
MJD340
MJD350
300
Unit
NPN
PNP
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
300
3
V
0.5
A
ICM
Collector Peak Current (tp = 25 oC)
Total Power Dissipation at Tcase ≤ 25 oC
Storage Temperature
0.75
A
Ptot
Tstg
Tj
15
W
oC
oC
-65 to 150
150
Max Operating Junction Temperature
For PNP types voltage and current values are negative.
1/5
June 1997
MJD340 / MJD350
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
8.33
100
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 300 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (vbE = 0)
0.1
mA
IEBO
Emitter Cut-off Current VEB = 3 V
(IC = 0)
0.1
mA
V
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 1 mA
300
30
hFE
DC Current Gain
IC = 50 mA
VCE = 10 V
240
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP type voltage and current values are negative.
Safe Operating Area
Derating Curve
2/5
MJD340 / MJD350
DC Current Gain (NPN type)
DC Current Gain (PNP type)
Collector Emitter Saturation Voltage (NPN type)
Collector Emitter Saturation Voltage (PNP type)
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MJD340 / MJD350
TO-252 (DPAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
2.2
TYP.
MAX.
2.4
MIN.
0.086
0.035
0.001
0.025
0.204
0.017
0.019
0.236
0.252
0.173
0.368
MAX.
0.094
0.043
0.009
0.035
0.212
0.023
0.023
0.244
0.260
0.181
0.397
A
A1
A2
B
0.9
1.1
0.03
0.64
5.2
0.23
0.9
B2
C
5.4
0.45
0.48
6
0.6
C2
D
0.6
6.2
E
6.4
6.6
G
4.4
4.6
H
9.35
10.1
L2
L4
0.8
0.031
0.6
1
0.023
0.039
H
DETAIL ”A”
D
L2
DETAIL ”A”
L4
0068772-B
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MJD340 / MJD350
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. ..
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