MMBTA42 [STMICROELECTRONICS]
SMALL SIGNAL NPN TRANSISTOR; 小信号NPN晶体管
| 型号： | MMBTA42 |
| 厂家： | 
ST |
| 描述： | SMALL SIGNAL NPN TRANSISTOR |
| 文件： | 总4页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBTA42
®
SMALL SIGNAL NPN TRANSISTOR
PRELIMINARY DATA
Type
Marking
A42
MMBTA42
■
■
SILICON EPITAXIAL PLANAR NPN HIGH
VOLTAGE TRANSISTOR
MINIATURE SOT-23 PLASTIC PACKAGE
FOR SURFACE MOUNTING CIRCUITS
TAPE AND REEL PACKING
■
■
THE PNP COMPLEMENTARY TYPE IS
MMBTA92
APPLICATIONS
SOT-23
■
VIDEO AMPLIFIER CIRCUITS (RGB
CATHODE CURRENT CONTROL)
TELEPHONE WIRELINE INTERFACE (HOOK
SWITCHES, DIALER CIRCUITS)
■
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Value
300
Unit
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
300
6
V
0.5
A
ICM
Collector Peak Current
0.6
A
o
Ptot
Total Dissipation at TC = 25 C
350
mW
oC
oC
Tstg
Storage Temperature
-65 to 150
150
Tj
Max. Operating Junction Temperature
1/4
January 2003
MMBTA42
THERMAL DATA
Rthj-amb
•
Thermal Resistance Junction-Ambient
Max
357.1
oC/W
• Device mounted on a PCB area of 1 cm2
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 200 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
100
nA
V(BR)CBO Collector-Base
Breakdown Voltage
(IE = 0)
300
300
6
V
V
V
IC = 100 µA
IC = 1 mA
V(BR)CEO Collector-Emitter
Breakdown Voltage
(IB = 0)
V(BR)EBO Emitter-Base
Breakdown Voltage
(IC = 0)
IE = 100 µA
VCE(sat)
VBE(sat)
hFE
Collector-Emitter
Saturation Voltage
IC = 20 mA IB = 2 mA
IC = 20 mA IB = 2 mA
0.5
0.9
V
V
Base-Emitter
Saturation Voltage
DC Current Gain
IC = 1 mA
IC = 10 mA
IC = 30 mA
VCE = 10 V
VCE = 10 V
VCE = 10 V
25
40
40
fT
Transition Frequency
IC = 10 mA VCE = 20 V f = 20 MHz
50
MHz
pF
CCBO
Collector-Base
Capacitance
IE = 0
VCB = 10 V f = 1 MHz
6
CEBO
Emitter-Base
Capacitance
IC = 0
VEB = 2 V f = 1 MHz
22
pF
Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %
2/4
MMBTA42
SOT-23 MECHANICAL DATA
mm
mils
DIM.
MIN.
0.85
0.65
1.20
2.80
0.95
1.9
TYP.
MAX.
1.1
MIN.
33.4
25.6
47.2
110.2
37.4
74.8
82.6
14.9
11.8
0
TYP.
MAX.
43.3
37.4
55.1
118
A
B
C
D
E
F
0.95
1.4
3
1.05
2.05
2.5
41.3
80.7
98.4
18.8
23.6
3.9
G
H
L
2.1
0.38
0.3
0.48
0.6
M
N
O
0
0.1
0.3
0.65
0.17
11.8
3.5
25.6
6.7
0.09
0044616/B
3/4
MMBTA42
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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© 2002 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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4/4
相关型号：
MMBTA42-13
Small Signal Bipolar Transistor, 0.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC PACKAGE-3
DIODES
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