SMP80MC [STMICROELECTRONICS]
TRISIL FOR TELECOM EQUIPMENT PROTECTION; TRISIL电信设备保护
| 型号： | SMP80MC |
| 厂家： | 
ST |
| 描述： | TRISIL FOR TELECOM EQUIPMENT PROTECTION |
| 文件： | 总9页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMP80MC
®
TRISIL™ FOR TELECOM EQUIPMENT PROTECTION
FEATURES
■
■
■
■
■
■
■
■
Bidirectional crowbar protection
Voltage: range from 120V to 270V
Low VBO / VR ratio
Micro capacitance equal to 12pF @ 50V
Low leakage current : IR = 2µA max
Holding current: IH = 150 mA min
Repetitive peak pulse current :
IPP = 80 A (10/1000µs)
SMB
MAIN APPLICATIONS
Any sensitive equipment requiring protection
(JEDEC DO-214AA)
against lightning strikes and power crossing:
Table 1: Order Codes
■
Terminals (phone, fax, modem...) and central
office equipment
Part Number
SMP80MC-120
SMP80MC-140
SMP80MC-160
SMP80MC-200
SMP80MC-230
SMP80MC-270
Marking
TP12
TP14
TP16
TP20
TP23
TP27
DESCRIPTION
The SMP80MC is a series of micro capacitance
transient surge arrestors designed for the protec-
tion of high debit rate communication equipment
on CPE side. Its micro capacitance avoids any dis-
tortion of the signal and is compatible with digital
transmission like ADSL2 and ADSL2+.
BENEFITS
Trisils are not subject to ageing and provide a fail
safe mode in short circuit for a better protection.
They are used to help equipment to meet main
standards such as UL1950, IEC950 / CSA C22.2
and UL1459. They have UL94 V0 approved resin.
SMB package is JEDEC registered (DO-214AA).
Trisils comply with the following standards GR-
1089 Core, ITU-T-K20/K21, VDE0433, VDE0878,
IEC61000-4-5 and FCC part 68.
Figure 1: Schematic Diagram
TM: TRISIL is a trademark of STMicroelectronics.
June 2005
REV. 3
1/9
SMP80MC
Table 2: In compliances with the following standards
Peak Surge
Waveform
Required
peak current
(A)
Minimum serial
resistor to meet
standard (Ω)
Current
waveform
STANDARD
Voltage
(V)
Voltage
GR-1089 Core
First level
2500
1000
2/10 µs
10/1000 µs
500
100
2/10 µs
10/1000 µs
5
2.5
GR-1089 Core
Second level
5000
1500
2/10 µs
500
100
2/10 µs
2/10 µs
5/310 µs
10
0
GR-1089 Core
Intra-building
2/10 µs
10/700 µs
1/60 ns
6000
1500
150
37.5
10
0
ITU-T-K20/K21
ITU-T-K20
(IEC61000-4-2)
8000
15000
ESD contact discharge
ESD air discharge
0
0
4000
2000
100
0
0
VDE0433
VDE0878
10/700 µs
1.2/50 µs
5/310 µs
50
4000
2000
100
0
0
1/20 µs
50
4000
4000
10/700 µs
1.2/50 µs
100
100
5/310 µs
8/20 µs
0
0
IEC61000-4-5
FCC Part 68, lightning
surge type A
1500
800
10/160 µs
10/560 µs
200
100
10/160 µs
10/560 µs
2.5
0
FCC Part 68, lightning
surge type B
1000
9/720 µs
25
5/320 µs
0
Table 3: Absolute Ratings (Tamb = 25°C)
Symbol
Parameter
Value
Unit
IPP
Repetitive peak pulse current (see figure 2)
10/1000 µs
8/20 µs
80
A
200
100
120
150
200
250
10/560 µs
5/310 µs
10/160 µs
1/20 µs
2/10 µs
IFS
Fail-safe mode : maximum current (note 1)
8/20 µs
5
kA
A
ITSM
Non repetitive surge peak on-state current (sinusoidal)
I2t value for fusing
t = 0.2 s
t = 1 s
t = 2 s
t = 15 mn
14
8
6.5
2
I2t
A2s
t = 16.6 ms
t = 20 ms
7.5
7.8
Tstg
Tj
Storage temperature range
-55 to 150
150
°C
°C
Maximum junction temperature
TL
Maximum lead temperature for soldering during 10 s.
260
Note 1: in fail safe mode, the device acts as a short circuit
2/9
SMP80MC
Table 4: Thermal Resistances
Symbol
Parameter
Junction to ambient (with recommended footprint)
Junction to leads
Value
100
20
Unit
°C/W
°C/W
Rth(j-a)
Rth(j-l)
Table 5: Electrical Characteristics (Tamb = 25°C)
Symbol
VRM
VBR
VBO
IRM
IPP
Parameter
Stand-off voltage
Breakdown voltage
Breakover voltage
Leakage current
Peak pulse current
Breakover current
Holding current
IBO
IH
VR
Continuous reverse voltage
Leakage current at VR
Capacitance
IR
C
Dynamic
VBO
Static
BO @ IBO
IRM @ VRM
IR @ VR
IH
min.
C
C
V
max.
note1
max.
note 2
V
max. max.
note 3
typ.
typ.
Types
max.
note 4 note 5 note 6
µA
2
V
µA
5
V
V
mA
mA
pF
12
pF
25
SMP80MC-120
SMP80MC-140
SMP80MC-160
SMP80MC-200
SMP80MC-230
SMP80MC-270
108
126
144
180
207
243
120
140
160
200
230
270
155
180
205
255
295
345
155
180
205
255
295
345
800
150
Note 1: I measured at V guarantee V min ≥ VR
BR
R
R
Note 2: see functional test circuit 1
Note 3: see test circuit 2
Note 4: see functional holding current test circuit 3
Note 5: V = 50V bias, V =1V, F=1MHz
R
RMS
=1V, F=1MHz
Note 6: V = 2V bias, V
R
RMS
3/9
SMP80MC
Figure 2: Pulse waveform
Figure 3: Non repetitive surge peak on-state
current versus overload duration
I
(A)
TSM
Repetitive peak pulse current
tr = rise time (µs)
% I
40
35
30
25
20
15
10
5
PP
F=50Hz
Tj initial = 25°C
tp = pulse duration time (µs)
100
50
0
t(s)
t
t
0
t
p
r
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
Figure 4: On-state voltage versus on-state
current (typical values)
Figure 5: Relative variation of holding current
versus junction temperature
I (A)
T
IH[Tj] / IH[Tj=25°C]
2.0
100
Tj=25°C
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
Tj(°C)
V (V)
T
0.0
10
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
1
2
3
4
5
6
7
8
Figure 6: Relative variation of breakover
voltage versus junction temperature
Figure 7: Relative variation of leakage current
versus junction temperature (typical values)
V
BO
[Tj] / V [Tj=25°C]
I [Tj] / I [Tj=25°C]
BO
R
R
1.08
1.07
1.06
1.05
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
0.94
1.E+03
1.E+02
1.E+01
1.E+00
VR=243V
Tj(°C)
Tj(°C)
-40 -30 -20 -10
0
10 20 30 40 50 60 70 80 90 100 110 120 130
25
50
75
100
125
4/9
SMP80MC
Figure 8: Variation of thermal impedance
junction to ambient versus pulse duration
(Printed circuit board FR4, SCu=35µm,
recommended pad layout)
Figure 9: Relative variation of junction
capacitance versus reverse voltage applied
(typical values)
Z
/R
C [V ] / C [V =2V]
R R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
F =1MHz
VOSC = 1VRMS
Tj = 25°C
tp(s)
V (V)
R
1.E-02
1.E-01
1.E+00
1.E+01
1.E+02
1.E+03
1
10
100
1000
Figure 10: Test circuit 1 for dynamic IBO and VBO parameters
100 V / µs, di/dt < 10 A / µs, Ipp = 80A
2 Ω
45 Ω
83 Ω
0.36 nF
46 µH
10 µF
U
66 Ω
470 Ω
KeyTek 'System 2' generator with PN246I module
1 kV / µs, di/dt < 10 A / µs, Ipp = 10 A
46 µH
26 µH
60 µF
250 Ω
47 Ω
U
12 Ω
KeyTek 'System 2' generator with PN246I module
5/9
SMP80MC
Figure 11: Test circuit 2 for IBO and VBO parameters
K
ton = 20ms
R1 = 140Ω
R2 = 240Ω
220V 50Hz
VBO
measurement
DUT
Vout
1/4
IBO
measurement
TEST PROCEDURE
Pulse test duration (tp = 20ms):
●
for Bidirectional devices = Switch K is closed
for Unidirectional devices = Switch K is open
●
V
●
●
selection:
OUT
Device with V < 200V ➔ V
= 250 V
= 480 V
, R1 = 140Ω
, R2 = 240Ω
BO
OUT
RMS
Device with V ≥ 200V ➔ V
BO
OUT
RMS
Figure 12: Test circuit 3 for dynamic IH parameter
R
Surge
generator
V
= - 48 V
BAT
D.U.T
This is a GO-NOGO test which allows to confirm the holding current (I ) level in a
H
functional test circuit.
TEST PROCEDURE
1/ Adjust the current level at the I value by short circuiting the AK of the D.U.T.
H
2/ Fire the D.U.T. with a surge current ➔ I
=
PP
10A, 10/1000µs.
3/ The D.U.T. will come back off-state within 50ms maximum.
6/9
SMP80MC
Figure 13: Ordering Information Scheme
Trisil Surface Mount
SMP 80 MC - xxx
Repetitive Peak Pulse Current
80 = 80A
Capacitance
MC = Micro Capacitance
Voltage
270 = 270V
Figure 14: SMB Package Mechanical Data
DIMENSIONS
E1
REF.
Millimeters
Inches
Min.
Max.
2.45
0.20
2.20
0.41
5.60
4.60
3.95
1.60
Min.
0.075
0.002
0.077
0.006
0.201
0.159
0.130
0.030
Max.
0.096
0.008
0.087
0.016
0.220
0.181
0.156
0.063
D
A1
A2
b
1.90
0.05
1.95
0.15
5.10
4.05
3.30
0.75
E
c
E
A1
E1
D
A2
C
L
b
L
Figure 15: Foot Print Dimensions (in millimeters)
2.3
1.52
2.75
1.52
7/9
SMP80MC
Table 6: Ordering Information
Part Number
SMP80MC-120
SMP80MC-140
SMP80MC-160
SMP80MC-200
SMP80MC-230
SMP80MC-270
Marking
Package
Weight
Base qty
Delivery mode
TP12
TP14
TP16
TP20
TP23
TP27
SMB
0.11 g
2500
Tape & reel
Table 7: Revision History
Date
Revision
Description of Changes
September-2001
11-May-2005
20-Jun-2005
1
2
3
First issue.
New types introduction.
Qualification of new types
8/9
SMP80MC
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics.
All other names are the property of their respective owners
© 2005 STMicroelectronics - All rights reserved
STMicroelectronics group of compagnies
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9/9
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