ST13007DFP [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR; 高压快速开关NPN功率晶体管
| 型号： | ST13007DFP |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| 文件： | 总7页 (文件大小：222K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST13007DFP
®
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
■
IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
■
■
■
■
3
2
1
■
■
■
■
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125 oC
LARGE RBSOA
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
TO-220FP
APPLICATIONS
■
UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
SWITCH MODE POWER SUPPLIES
INTERNAL SCHEMATIC DIAGRAM
■
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
ABSOLUTE MAXIMUM RATINGS
Symbol
VCEV
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
700
400
9
Unit
V
V
V
A
A
A
A
W
V
8
ICM
Collector Peak Current
16
IB
Base Current
4
IBM
Base Peak Current
8
o
Ptot
36
Total Dissipation at Tc ≤ 25 C
Visol
Insulation Withstand Voltage (RMS) from All
Three Leads to External Heatsink
1500
Tstg
Tj
Storage Temperature
-65 to 150
150
oC
oC
Max. Operating Junction Temperature
1/7
May 2003
ST13007DFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
3.47
62.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCE = 700 V
Min.
Typ.
Max.
Unit
ICES
Collector Cut-off
Current (VBE = 0)
10
0.5
µA
mA
o
VCE = 700 V
Tc = 100 C
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
VCE = 400 V
100
µA
µA
V
Emitter Cut-off Current VEB = 9 V
(IC = 0)
100
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
400
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 8 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 2 A
IB = 1 A
0.8
1.5
2
V
V
V
V
o
Tc = 100 C
3
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 2 A
IC = 5 A
IC = 5 A
IB = 0.4 A
IB = 1 A
IB = 1 A
1.2
1.6
1.5
V
V
V
o
Tc = 100 C
hFE
Vf
DC Current Gain
IC = 2 A
IC = 5 A
VCE = 5 V
VCE = 5 V
18
8
40
25
Diode Forward
Voltage
IC = 3 A
2.5
V
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 5 A
IB1 = 1 A
L = 200 µH (see figure 1)
VCL = 250 V RBB = 0Ω
VBE(off) = -5 V
ts
tf
1.7
90
2.3
150
µs
ns
INDUCTIVE LOAD
Storage Time
Fall Time
IC = 5 A
ΙB1 = 1 A
L = 200 µH TC = 125 C
VCL = 250 V RBB = 0Ω
VBE(off) = -5 V
ts
tf
2.2
150
µs
ns
o
(see figure 1)
* Pulsed: Pulse duration = 300 µs, duty cycle 2 %.
2/7
ST13007DFP
Safe Operating Area
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/7
ST13007DFP
Diode Forward Voltage
Switching Time Resistive Load
Switching Time Inductive Load
Reverse Biased SOA
4/7
ST13007DFP
Figure 1: Inductive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/7
ST13007DFP
TO-220FP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.4
TYP.
MAX.
4.6
2.7
2.75
0.7
1
MIN.
0.173
0.098
0.098
0.017
0.030
0.045
0.045
0.195
0.094
0.393
MAX.
0.181
0.106
0.108
0.027
0.039
0.067
0.067
0.204
0.106
0.409
A
B
2.5
D
2.5
E
0.45
0.75
1.15
1.15
4.95
2.4
F
F1
F2
G
1.7
1.7
5.2
2.7
10.4
G1
H
10
L2
L3
L4
L6
L7
Ø
16
0.630
28.6
9.8
15.9
9
30.6
10.6
16.4
9.3
1.126
0.385
0.626
0.354
0.118
1.204
0.417
0.645
0.366
0.126
3
3.2
L3
L6
L7
¯
1 2 3
L4
L2
6/7
ST13007DFP
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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7/7
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