STB13005 [STMICROELECTRONICS]
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS; 高压快速开关NPN功率晶体管
| 型号： | STB13005 |
| 厂家： | 
ST |
| 描述： | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
| 文件： | 总8页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ST13005
STB13005-1
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTORS
■
■
■
■
MEDIUM VOLTAGE CAPABILITY
NPN TRANSISTORS
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLEOPERATION
■
■
VERY HIGH SWITCHING SPEED
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGEIN TUBE (SUFFIX ”-1”)
3
3
2
1
2
APPLICATIONS:
1
■
ELECTRONIC BALLASTSFOR
FLUORESCENT LIGHTING
TO-220
I2PAK
TO-262
(Suffix ”-1”)
■
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The devices are is manufactured using high
voltage Multi Epitaxial Planar technology for high
switching speeds and medium voltage capability.
They use a Cellular Emitter structure with planar
edge termination to enhance switching speeds
while maintaining the wide RBSOA.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Value
Unit
V
700
400
V
9
V
4
A
ICM
Collector Peak Current (tp < 5 ms)
Base Current
8
A
IB
2
A
IBM
Base Peak Current (tp < 5 ms)
4
75
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc = 25 C
W
oC
oC
Storage Temperature
-65 to 150
150
Max. Operating Junction Temperature
1/8
January 1999
ST13005 / STB13005-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.67
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICEV
Collector Cut-off
Current (VBE = -1.5V)
VCE = 700V
VCE = 700V
1
5
mA
mA
Tcase = 100oC
IEBO
Emitter Cut-off
Current (IC = 0)
VEB = 9 V
1
mA
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 10 mA
400
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IC = 4 A
IB = 0.2 A
IB = 0.5 A
IB = 1 A
0.5
0.6
1
V
V
VBE(sat)
hFE
Base-Emitter
Saturation Voltage
IC = 1 A
IC = 2 A
IB = 0.2 A
IB = 0.5 A
1.2
1.6
V
V
DC Current Gain
IC = 1 A
Group A
Group B
IC = 2 A
VCE = 5 V
15
27
8
32
45
40
VCE = 5 V
RESISTIVE LOAD
Storage Time
Fall Time
ts
tf
IC = 2 A
IB1 = -IB2 = 0.4 A
VCC = 125 V
1.5
3.0
µs
µs
0.2
Tp = 30 µs
Pulsed: Pulse duration = 300µs, dutycycle = 1.5 %
Note : Product is pre-selected inDC current gain (GROUP A and GROUP B). STMicroelectronics reserves the right to ship either groups
according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.
2/8
ST13005 / STB13005-1
Safe Operating Areas
Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter SaturationVoltage
Base Emitter Saturation Voltage
3/8
ST13005 / STB13005-1
InductiveFall Time
InductiveStorage Time
Resistive Fall Time
Resistive Load Storage Time
Reverse Biased SOA
4/8
ST13005 / STB13005-1
Figure 1: Inductive Load Switching TestCircuit.
1) Fast electronic switch
2) Non-inductive Resistor
3) Fast recovery rectifier
Figure 2: Resistive Load Switching Test Circuit.
1) Fast electronic switch
2) Non-inductive Resistor
5/8
ST13005 / STB13005-1
TO-220 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
TYP.
MAX.
4.60
1.32
2.72
MIN.
0.173
0.048
0.094
MAX.
0.181
0.051
0.107
A
C
4.40
1.23
2.40
D
D1
E
1.27
0.050
0.49
0.61
1.14
1.14
4.95
2.4
0.70
0.88
1.70
1.70
5.15
2.7
0.019
0.024
0.044
0.044
0.194
0.094
0.393
0.027
0.034
0.067
0.067
0.203
0.106
0.409
F
F1
F2
G
G1
H2
L2
L4
L5
L6
L7
L9
DIA.
10.0
10.40
16.4
0.645
13.0
2.65
15.25
6.2
14.0
2.95
15.75
6.6
0.511
0.104
0.600
0.244
0.137
0.147
0.551
0.116
0.620
0.260
0.154
0.151
3.5
3.93
3.85
3.75
P011C
6/8
ST13005 / STB13005-1
2
TO-262 (I PAK) MECHANICAL DATA
mm
inch
DIM.
MIN.
4.4
TYP.
MAX.
4.6
MIN.
0.173
0.098
0.027
0.044
0.017
0.048
0.352
0.094
0.393
0.515
0.137
0.050
TYP.
MAX.
0.181
0.106
0.036
0.067
0.023
0.053
0.368
0.106
0.409
0.531
0.149
0.055
A
A1
B
2.49
0.7
2.69
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
2.4
0.6
C2
D
1.36
9.35
2.7
e
E
10
10.4
13.6
3.78
1.4
L
13.1
3.48
1.27
L1
L2
L1
L2
D
L
P011P5/E
7/8
ST13005 / STB13005-1
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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