STB18N55M5 [STMICROELECTRONICS]
N-channel 550 V, 0.18 Ω, 13 A, MDmesh⢠V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220; N沟道550 V， 0.18 I© ， 13 A， MDmeshâ ?? ¢在D²PAK ， DPAK V功率MOSFET ， TO- 220FP和TO -220
| 型号： | STB18N55M5 |
| 厂家： | 
ST |
| 描述： | N-channel 550 V, 0.18 Ω, 13 A, MDmesh⢠V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 |
| 文件： | 总22页 (文件大小：1253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB18N55M5, STD18N55M5
STF18N55M5, STP18N55M5
N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET
in D²PAK, DPAK, TO-220FP and TO-220
Features
VDSS
@TJmax
RDS(on)
max
Order codes
ID
3
1
3
1
STB18N55M5
STD18N55M5
STF18N55M5
STP18N55M5
DPAK
D²PAK
550 V
< 0.24 Ω
13 A
■ DPAK worldwide best R
DS(on)
3
3
■ Higher V
rating
DSS
2
2
1
1
■ High dv/dt capability
TO-220FP
TO-220
■ Excellent switching performance
■ Easy to drive
■ 100% avalanche tested
Figure 1.
Internal schematic diagram
Application
$ꢅꢆꢇ
Switching applications
Description
'ꢅꢁꢇ
The devices are N-channel MDmesh™ V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics’ well-known
3ꢅꢈꢇ
PowerMESH™ horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
!-ꢀꢁꢂꢃꢄVꢁ
Table 1.
Device summary
Order codes
Marking
Package
D²PAK
Packaging
STB18N55M5
STD18N55M
STF18N55M5
STP18N55M5
Tape and reel
Tube
DPAK
TO-220FP
TO-220
18N55M5
March 2011
Doc ID 17078 Rev 2
1/22
www.st.com
22
Contents
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
2/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Value
TO-220, DPAK,
Parameter
Unit
TO-220FP
D²PAK
VGS
ID
Gate-source voltage
25
V
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
13
8.3
52
90
13 (1)
8.3 (1)
52 (1)
25
A
A
ID
(2)
IDM
A
PTOT
IAR
Total dissipation at TC = 25 °C
W
Avalanche current, repetitive or not-
repetitive (pulse width limited by Tj max)
4
A
Single pulse avalanche energy
EAS
200
15
mJ
(starting Tj = 25°C, ID = IAR, VDD = 50 V)
dv/dt (3) Peak diode recovery voltage slope
V/ns
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t = 1 s; TC = 25 °C)
VISO
2500
V
Tstg
Tj
Storage temperature
- 55 to 50
150
°C
°C
Max. operating junction temperature
1. Limited only by maximum temperature allowed.
2. Pulse width limited by safe operating area.
3. ISD ≤13 A, di/dt ≤400 A/µs, VPeak < V(BR)DSS, VDD = 400 V.
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
DPAK D²PAK TO-220 TO-220FP
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
Rthj-pcb Thermal resistance junction-pcb max
1.39
5
°C/W
°C/W
°C/W
62.5
50
30
Maximum lead temperature for soldering
purpose
Tl
300
°C
Doc ID 17078 Rev 2
3/22
Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
2
Electrical characteristics
(T = 25 °C unless otherwise specified)
C
Table 4.
Symbol
On /off states
Parameter
Test conditions
ID = 1 mA, VGS = 0
DS = Max rating
Min.
Typ.
Max. Unit
Drain-source
breakdown voltage
V(BR)DSS
550
V
Zero gate voltage
V
1
µA
µA
IDSS
drain current (VGS = 0) VDS = Max rating, TC=125 °C
100
Gate-body leakage
IGSS
VGS
=
25 V
100
5
nA
V
current (VDS = 0)
VGS(th)
RDS(on)
Gate threshold voltage VDS = VGS, ID = 250 µA
Static drain-source on
3
4
VGS = 10 V, ID = 6.5 A
0.18
0.24
Ω
resistance
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min.
Typ.
Max. Unit
Input capacitance
Ciss
Coss
Crss
1352
38
pF
VDS = 100 V, f = 1 MHz,
VGS = 0
Output capacitance
-
-
-
pF
pF
Reverse transfer
capacitance
3.7
Equivalent
capacitance time
related
(1)
Co(tr)
-
98
pF
VDS = 0 to 440 V
Equivalent
capacitance energy
related
(2)
Co(er)
-
-
35
-
-
pF
Intrinsic gate
resistance
RG
f = 1 MHz open drain
1.7
Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 440 V, ID = 6.5 A,
VGS = 10 V
31
6.3
14
nC
nC
nC
-
-
(see Figure 19)
1. Coss eq. time related is defined as a constant equivalent capacitance giving the same charging time as Coss
when VDS increases from 0 to 80% VDSS
2. Coss eq. energy related is defined as a constant equivalent capacitance giving the same stored energy as
Coss when VDS increases from 0 to 80% VDSS
4/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min. Typ.
Max Unit
td(off)
Turn-off delay time
Rise time
29
ns
VDD = 400 V, ID = 9 A,
RG = 4.7 Ω, VGS = 10 V
(see Figure 18, Figure 23)
tr
tc
tf
9.5
ns
-
-
Cross time
Fall time
23
ns
13
ns
Table 7.
Symbol
Source drain diode
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
13
52
A
A
-
-
(1)
ISDM
Source-drain current (pulsed)
(2)
VSD
Forward on voltage
ISD = 13 A, VGS = 0
1.5
V
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
238
2.8
ns
µC
A
ISD = 13 A, di/dt = 100 A/µs
Qrr
-
-
VDD = 100 V (see Figure 20)
IRRM
23.5
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 13 A, di/dt = 100 A/µs
VDD = 100 V, Tj = 150 °C
(see Figure 20)
278
3.3
24
ns
µC
A
Qrr
IRRM
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Doc ID 17078 Rev 2
5/22
Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
2.1
Electrical characteristics (curves)
Figure 2.
Safe operating area for TO-220,
D²PAK
Figure 3.
Thermal impedance for TO-220,
D²PAK
AM08661v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 4.
Safe operating area for DPAK
Figure 5.
Thermal impedance for DPAK
AM08662v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10µs
10
100µs
1ms
1
10ms
0.1
10
VDS(V)
0.1
1
100
Figure 6.
Safe operating area for TO-220FP
Figure 7.
Thermal impedance for TO-220FP
AM08663v1
I
D
(A)
Tj=150°C
Tc=25°C
Single pulse
10
10µs
100µs
1
1ms
10ms
0.1
0.01
10
VDS(V)
0.1
1
100
6/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Electrical characteristics
Figure 8.
Output characteristics
Figure 9.
Transfer characteristics
AM08664v1
AM08665v1
I
D
(A)
I
D
(A)
7.5V
VGS=10V
VDS=20V
7V
20
15
20
15
10
6.5V
6V
10
5.5V
5V
5
0
5
0
5
3
4
VDS(V)
8
9
VGS(V)
0
10
15
5
6
7
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on resistance
AM08666v1
AM08667v1
V
(V)
GS
R
DS(on)
(Ω)
V
GS
V
DD=440V
450
400
350
300
250
12
0.22
ID=6.5A
VDS
VGS=10V
0.20
10
8
0.18
0.16
6
200
150
100
50
4
2
0
0.14
0.12
0.10
0
12
4
6
2
8
10
10
20
30
25
35
Q
g
(nC)
ID(A)
0
5
15
0
Figure 12. Capacitance variations
Figure 13. Output capacitance stored energy
AM08668v1
AM08669v1
C
(pF)
E
(µJ)
oss
4.0
10000
1000
100
3.5
3.0
Ciss
2.5
2.0
1.5
1.0
Coss
Crss
10
1
0.5
0
0
0.1
100
200
400 500
1
10
V
DS(V)
100
300
VDS(V)
Doc ID 17078 Rev 2
7/22
Electrical characteristics
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 14. Normalized gate threshold voltage Figure 15. Normalized on resistance vs
vs temperature
temperature
AM08670v1
AM08671v1
V
GS(th)
(norm)
R
DS(on)
(norm)
ID=250µA
1.10
1.00
0.90
2.1
1.9
1.7
1.5
ID=6.5A
VGS=10V
1.3
1.1
0.9
0.80
0.7
0.5
-50
-25
0.70
-50
-25
0
25 50 75
T
J(°C)
0
25 50 75
TJ(°C)
100
100
Figure 16. Switching losses vs gate resistance Figure 17. Normalized B
vs temperature
VDSS
(1)
AM08673v1
AM08672v1
E
(μJ)
BVDSS
(norm)
Eon
ID=9A
1.07
1.05
1.03
1.01
0.99
0.97
140
120
100
80
VCL=400V
VGS=10V
ID=1mA
Eoff
60
40
0.95
20
0
0.93
20
30
40
10
-50
RG(Ω)
-25
25
75
100
TJ(°C)
0
0
50
1. Eon including reverse recovery of a SiC diode
8/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Test circuits
3
Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
VDD
12V
47kΩ
1kΩ
100nF
2200
3.3
μF
RL
μF
IG=CONST
VDD
100Ω
Vi=20V=VGMAX
D.U.T.
VG
VD
RG
VGS
2200
μF
D.U.T.
2.7kΩ
47kΩ
PW
1kΩ
PW
AM01468v1
AM01469v1
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
L
A
A
A
B
D
FAST
DIODE
L=100μH
VD
G
2200
μF
D.U.T.
B
3.3
μF
VDD
S
3.3
μF
1000
μF
B
VDD
25
Ω
ID
D
G
RG
S
Vi
D.U.T.
Pw
AM01470v1
AM01471v1
Figure 22. Unclamped inductive waveform
Figure 23. Switching time waveform
Concept waveform for Inductive Load Turn-off
V(BR)DSS
Id
VD
90%Vds
90%Id
Tdelay-off
IDM
Vgs
90%Vgs
10%Vds
on
ID
Vgs(I(t))
VDD
VDD
10%Id
Vds
Trise
Tfall
Tcross -over
AM01472v1
AM05540v1
Doc ID 17078 Rev 2
9/22
Package mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
®
®
ECOPACK packages, depending on their level of environmental compliance. ECOPACK
specifications, grade definitions and product status are available at: www.st.com. ECOPACK
is an ST trademark.
10/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Package mechanical data
Table 8.
Dim.
TO-220FP mechanical data
Min.
mm
Typ.
Max.
A
B
4.4
2.5
4.6
2.7
D
2.5
2.75
0.7
E
0.45
0.75
1.15
1.15
4.95
2.4
F
1
F1
F2
G
1.70
1.70
5.2
G1
H
2.7
10
10.4
L2
L3
L4
L5
L6
L7
Dia
16
28.6
9.8
2.9
15.9
9
30.6
10.6
3.6
16.4
9.3
3
3.2
Figure 24. TO-220FP drawing
L7
E
A
B
D
Dia
L5
L6
F2
F1
F
G
H
G1
L4
L2
L3
7012510_Rev_K
Doc ID 17078 Rev 2
11/22
Package mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Table 9.
Dim.
DPAK (TO-252) mechanical data
mm
Min.
Typ.
Max.
A
A1
A2
b
2.20
0.90
0.03
0.64
5.20
0.45
0.48
6.00
2.40
1.10
0.23
0.90
5.40
0.60
0.60
6.20
b4
c
c2
D
D1
E
5.10
6.40
6.60
E1
e
4.70
2.28
e1
H
4.40
9.35
1
4.60
10.10
L
L1
L2
L4
R
2.80
0.80
0.60
0°
1
0.20
V2
8°
(a)
Figure 25. DPAK footprint
1.6
6.7
3
3
2.3
2.3
6.7
1.6
AM08850v1
a. All dimension are in millimeters
12/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 26. DPAK (TO-252) drawing
Package mechanical data
0068772_G
Doc ID 17078 Rev 2
13/22
Package mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Table 10. TO-220 type A mechanical data
Dim.
mm
Min.
Typ.
Max.
A
b
4.40
0.61
1.14
0.48
15.25
4.60
0.88
1.70
0.70
15.75
b1
c
D
D1
E
1.27
10
10.40
2.70
5.15
1.32
6.60
2.72
14
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
∅P
Q
3.50
3.93
16.40
28.90
3.75
2.65
3.85
2.95
14/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 27. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 17078 Rev 2
15/22
Package mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Table 11. D²PAK (TO-263) mechanical data
Dim.
mm
Min.
Typ.
Max.
A
A1
b
4.40
0.03
0.70
1.14
0.45
1.23
8.95
7.50
10
4.60
0.23
0.93
1.70
0.60
1.36
9.35
b2
c
c2
D
D1
E
10.40
E1
e
8.50
2.54
e1
H
4.88
15
5.28
15.85
2.69
2.79
1.40
1.75
J1
L
2.49
2.29
1.27
1.30
L1
L2
R
0.4
V2
0°
8°
16/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 28. D²PAK (TO-263) drawing
Package mechanical data
0079457_P
(b)
Figure 29. D²PAK footprint
16.90
10.30
5.08
1.30
3.70
8.90
Footprint
b. All dimension are in millimeters
Doc ID 17078 Rev 2
17/22
Packaging mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
5
Packaging mechanical data
Table 12. D²PAK (TO-263) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
D
10.5
15.7
1.5
10.7
15.9
1.6
A
B
C
D
G
N
T
330
1.5
12.8
20.2
24.4
100
13.2
26.4
30.4
D1
E
1.59
1.65
11.4
4.8
1.61
1.85
11.6
5.0
F
K0
P0
P1
P2
R
3.9
4.1
11.9
1.9
12.1
2.1
Base qty.
Bulk qty.
1000
1000
50
T
0.25
23.7
0.35
24.3
W
18/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Packaging mechanical data
Table 13. DPAK (TO-252) tape and reel mechanical data
Tape
Reel
mm
mm
Dim.
Dim.
Min.
Max.
Min.
Max.
A0
B0
B1
D
6.8
7
A
B
C
D
G
N
T
330
10.4
10.6
12.1
1.6
1.5
12.8
20.2
16.4
50
13.2
18.4
22.4
1.5
1.5
D1
E
1.65
7.4
1.85
7.6
F
K0
P0
P1
P2
R
2.55
3.9
2.75
4.1
Base qty.
Bulk qty.
2500
2500
7.9
8.1
1.9
2.1
40
T
0.25
15.7
0.35
16.3
W
Doc ID 17078 Rev 2
19/22
Packaging mechanical data
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Figure 30. Tape for DPAK and D²PAK
10 pitches cumulative
tolerance on tape +/- 0.2 mm
P0
D
P2
T
E
F
W
K0
B1
B0
For machine ref. only
including draft and
A0
D1
P1
radii concentric around B0
User direction of feed
R
Bending radius
User direction of feed
AM08852v1
Figure 31. Reel for DPAK and D²PAK
T
REEL DIMENSIONS
40mm min.
Access hole
At sl ot location
B
D
C
N
A
G measured
Tape slot
In core for
Full radius
At hub
Tape start
AM08851v1
20/22
Doc ID 17078 Rev 2
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Revision history
6
Revision history
Table 14. Document revision history
Date
Revision
Changes
09-Feb-2010
1
First release.
– Document status promoted from preliminary data to datasheet;
– Added new package, mechanical data: D²PAK.
04-Mar-2011
2
Doc ID 17078 Rev 2
21/22
STB18N55M5, STD18N55M5, STF18N55M5, STP18N55M5
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the
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