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STB36NF02L [STMICROELECTRONICS]

N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET; N沟道20V - 0.016欧姆 - 36A D2PAK低栅电荷的STripFET功率MOSFET
STB36NF02L
型号： STB36NF02L
厂家： ST    ST
描述：

N-CHANNEL 20V - 0.016 ohm - 36A D2PAK LOW GATE CHARGE STripFET POWER MOSFET
N沟道20V - 0.016欧姆 - 36A D2PAK低栅电荷的STripFET功率MOSFET

晶体 晶体管 功率场效应晶体管 开关 脉冲 栅
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STB36NF02L  
2
N-CHANNEL 20V - 0.016  
Ω - 36A D PAK  
LOW GATE CHARGE STripFET POWER MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STB36NF02L  
20 V  
< 0.021 Ω  
36 A  
■
■
■
■
■
TYPICAL RDS(on) = 0.016 Ω  
TYPICAL Qg = 19 nC @ 10V  
OPTIMAL RDS(on) x Qg TRADE-OFF  
CONDUCTION LOSSESREDUCED  
SWITCHING LOSSESREDUCED  
3
1
DESCRIPTION  
This application specific Power Mosfet is the third  
generation of STMicroelectronics unique ”Single  
Feature Size ” strip-based process. The resul-  
ting transistor shows the best trade-off between  
on-resistance and gate charge. When used as  
high and low side in buck regulators, it gives the  
best performance in termsof both conductionand  
switching losses. This is extremely important for  
motherboards where fast switching and high effi-  
ciency are of paramount importance.  
D2PAK  
TO-263  
ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
■
SPECIFICALLYDESIGNED AND  
OPTIMISED FOR HIGH EFFICIENCY CPU  
CORE DC/DC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
20  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 kΩ)  
Gate-source Voltage  
20  
V
20  
V
±
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
36  
A
ID  
25  
144  
A
I
DM(• )  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
75  
W
Derating Factor  
0.5  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
(•) Pulse width limited by safe operating area  
1/6  
October 1999  
STB36NF02L  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Rthj-amb Thermal Resistance Junction-ambient  
Max  
Max  
2
62.5  
300  
oC/W  
oC/W  
oC  
Tl  
Maximum Lead Temperature For Soldering Purpose  
(Tcase = 25 oC unless otherwisespecified)  
ELECTRICAL CHARACTERISTICS  
OFF  
Symbol  
Parameter  
Test Conditions  
ID = 250 µA VGS = 0  
Min.  
Typ.  
Max.  
Unit  
V(BR)DSS Drain-source  
20  
V
Breakdown Voltage  
Zero Gate Voltage  
Drain Current (VGS = 0) VDS = Max Rating  
IDSS  
IGSS  
VDS = Max Rating  
1
10  
µA  
A
µ
o
Tc =125 C  
Gate-body Leakage  
Current (VDS = 0)  
VGS = ± 20 V  
± 100  
nA  
ON ( )  
Symbol  
VGS(th)  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
Gate Threshold Voltage VDS = VGS ID = 250 µA  
1
2.5  
V
RDS(on)  
Static Drain-source On VGS = 10V  
Resistance VGS = 4.5V  
ID = 18 A  
ID = 18 A  
0.016 0.021  
Ω
Ω
0.023  
0.03  
ID(on)  
On State Drain Current VDS > ID(on) x RDS(on)max  
VGS = 10 V  
36  
A
DYNAMIC  
Symbol  
Parameter  
Forward  
Test Conditions  
VDS > ID(on) x RDS(on)max ID =18 A  
Min.  
Typ.  
Max.  
Unit  
gfs ( )  
20  
S
Transconductance  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
Reverse Transfer  
Capacitance  
VDS = 25 V f = 1 MHz VGS = 0  
750  
270  
60  
pF  
pF  
pF  
2/6  
STB36NF02L  
ELECTRICAL CHARACTERISTICS  
(continued)  
SWITCHING ON  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(on)  
tr  
Turn-on Delay Time  
Rise Time  
VDD = 15 V  
RG = 4.7  
ID = 40 A  
VGS = 4.5 V  
20  
270  
ns  
ns  
Ω
(Resistive Load, see fig. 3)  
Qg  
Qgs  
Qgd  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
VDD = 16 V ID = 36 A VGS = 10 V  
19  
3
5
21  
nC  
nC  
nC  
SWITCHING OFF  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
td(off)  
tf  
Turn-off Delay Time  
Fall Time  
VDD = 15 V  
RG = 4.7 Ω  
ID = 40 A  
VGS = 4.5 V  
35  
60  
ns  
ns  
(Resistive Load, see fig. 3)  
SOURCE DRAIN DIODE  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ISD  
ISDM ( )  
Source-drain Current  
Source-drain Current  
(pulsed)  
36  
144  
A
A
•
VSD ( ) Forward On Voltage  
ISD =36 A VGS = 0  
1.5  
V
trr  
Reverse Recovery  
Time  
Reverse Recovery  
Charge  
Reverse Recovery  
Current  
ISD = 36 A  
VDD = 15 V  
(see test circuit, fig. 5)  
di/dt = 100 A/µs  
Tj = 150 oC  
50  
80  
2
ns  
Qrr  
nC  
A
IRRM  
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
( ) Pulse width limited by safe operating area  
•
3/6  
STB36NF02L  
Fig. 1:  
Fig. 2:  
UnclampedInductive Waveform  
Unclamped Inductive Load Test Circuit  
Fig. 3: Switching Times Test Circuits For  
Fig. 4: Gate Charge test Circuit  
Resistive Load  
Fig. 5:  
Test Circuit For InductiveLoad Switching  
And Diode Recovery Times  
4/6  
STB36NF02L  
2
TO-263 (D PAK) MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
4.4  
TYP.  
MAX.  
4.6  
MIN.  
0.173  
0.098  
0.027  
0.044  
0.017  
0.047  
0.352  
0.393  
0.192  
0.590  
0.050  
0.055  
MAX.  
0.181  
0.106  
0.036  
0.067  
0.023  
0.053  
0.368  
0.409  
0.208  
0.624  
0.055  
0.068  
A
A1  
B
2.49  
0.7  
2.69  
0.93  
1.7  
B2  
C
1.14  
0.45  
1.21  
8.95  
10  
0.6  
C2  
D
1.36  
9.35  
10.4  
5.28  
15.85  
1.4  
E
G
4.88  
15  
L
L2  
L3  
1.27  
1.4  
1.75  
D
A
C
C2  
DETAIL”A”  
DETAIL”A”  
A1  
B
B2  
E
G
L3  
L2  
L
P011P6/E  
5/6  
STB36NF02L  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parites which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specificationmentioned in this publication are  
subject tochange without notice. This publication supersedes and replaces all informaiton previouslysupplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systemswithout express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
1999 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.  
http://www.st.com  
.
6/6  

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