STB3NA60-1 [STMICROELECTRONICS]
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR; N - 沟道增强模式快速功率MOS晶体管
| 型号： | STB3NA60-1 |
| 厂家： | 
ST |
| 描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 文件： | 总9页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STB3NA60-1
N - CHANNEL ENHANCEMENT MODE
FAST POWER MOS TRANSISTOR
PRELIMINARY DATA
TYPE
VDSS
RDS(on)
< 4 Ω
ID
STB3NA60-1
600 V
2.9 A
■
■
■
■
■
■
■
TYPICAL RDS(on) = 0.7 Ω
AVALANCHERUGGED TECHNOLOGY
± 30V GATE TO SOURCE VOLTAGE RATING
100% AVALANCHE TESTED
REPETITIVE AVALANCHE DATA AT 100oC
LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
3
2
1
APPLICATIONS
I2PAK
TO-262
■
■
■
■
■
HIGH CURRENT, HIGH SPEED SWITCHING
SWITCH MODE POWER SUPPLIES (SMPS)
DC-DC & DC-AC CONVERTERS
MOTOR CONTROL, AUDIO AMPLIFIERS
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VDS
VDGR
VGS
ID
Parameter
Value
600
Unit
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ)
Gate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
V
V
600
± 30
2.9
V
A
ID
1.8
A
I
DM(• )
11.6
80
A
Ptot
Total Dissipation at Tc = 25 oC
W
Derating Factor
0.64
-65 to 150
150
W/oC
oC
oC
Tstg
Tj
Storage Temperature
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
1/9
March 1996
STB3NA60-1
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Rthj-amb Thermal Resistance Case-sink
Max
Max
Typ
1.56
62.5
0.5
oC/W
oC/W
oC/W
oC
Tl
Maximum Lead Temperature For Soldering Purpose
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
IAR
EAS
EAR
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max, δ < 1%)
2.9
A
Single Pulse Avalanche Energy
42
1.6
1.8
mJ
mJ
A
(starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Repetitive Avalanche Energy
(pulse width limited by Tj max, δ < 1%)
Avalanche Current, Repetitive or Not-Repetitive
(Tc = 100 oC, pulse width limited by Tj max, δ < 1%)
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbol
V(BR)DSS Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (VGS = 0) VDS = Max Rating x 0.8 Tc = 125 oC
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ID = 250 µA VGS = 0
600
V
IDSS
IGSS
VDS = Max Rating
250
1000
µA
µA
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
±100
nA
ON ( )
Symbol
VGS(th)
RDS(on)
Parameter
Test Conditions
Min.
Typ.
3
Max.
Unit
V
Gate Threshold Voltage VDS = VGS ID = 250 µA
2.25
3.75
Static Drain-source On VGS = 10 V ID = 1.5 A
Resistance
3.3
4
8
Ω
VGS = 10 V ID = 1.5 A TC = 100 oC
ID(on)
On State Drain Current VDS > ID(on) x RDS(on)max VGS = 10 V
2.9
A
DYNAMIC
Symbol
Parameter
Forward
Test Conditions
Min.
Typ.
Max.
Unit
gfs ( )
VDS > ID(on) x RDS(on)max
ID = 1.5 A
1
2
S
Transconductance
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25 V f = 1 MHz
VGS = 0
380
57
17
500
75
23
pF
pF
pF
2/9
STB3NA60-1
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbol
Parameter
Turn-on Time
Rise Time
Test Conditions
VDD = 300 V
Min.
Typ.
Max.
Unit
td(on)
tr
ID = 1.5 A
14
25
20
35
ns
ns
RG = 18 Ω
VGS = 10 V
(see test circuit, figure 3)
(di/dt)on Turn-on Current Slope VDD = 400 V
G = 18 Ω
ID = 3 A
VGS = 10 V
300
A/µs
R
(see test circuit, figure 5)
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
ID = 3 A
VDD = Max Rating x 0.8
VGS = 10 V
22
6
9
30
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
VDD = 480 V
Min.
Typ.
Max.
Unit
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
ID = 3 A
13
24
12
18
34
17
ns
ns
ns
RG = 18 Ω
VGS = 10 V
(see test circuit, figure 5)
SOURCE DRAIN DIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (• )
Source-drain Current
Source-drain Current
(pulsed)
2.9
11.6
A
A
VSD ( ) Forward On Voltage
ISD = 2.9 A
VGS = 0
1.5
V
trr
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 3 A
VDD = 100 V
(see test circuit, figure 5)
di/dt = 100 A/µs
460
5.6
24
ns
Tj = 150 oC
Qrr
µC
IRRM
A
( ) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
3/9
STB3NA60-1
Derating Curve
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
4/9
STB3NA60-1
Capacitance Variations
Normalized Gate Threshold Voltage vs
Temperature
Normalized On Resistance vs Temperature
Turn-on Current Slope
Turn-off Drain-source Voltage Slope
Cross-over Time
5/9
STB3NA60-1
Switching Safe Operating Area
Accidental Overload Area
Source-drain Diode Forward Characteristics
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
6/9
STB3NA60-1
Fig. 3: Switching Times Test Circuits For
Fig. 4: Gate Charge test Circuit
Resistive Load
Fig. 5: Test Circuit For Inductive Load Switching
And DIode Recovery Times
7/9
STB3NA60-1
TO-262 (I2PAK) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
4.3
TYP.
MAX.
4.6
MIN.
0.169
0.098
0.027
0.047
0.049
0.017
0.047
0.354
0.096
0.393
0.519
0.137
0.050
MAX.
0.181
0.106
0.036
0.054
0.055
0.023
0.053
0.368
0.104
0.404
0.531
0.149
0.054
A
A1
B
2.49
0.7
2.69
0.93
1.38
1.4
B1
B2
C
1.2
1.25
0.45
1.21
9
0.6
C2
D
1.36
9.35
2.64
10.28
13.5
3.78
1.37
e
2.44
10
E
L
13.2
3.48
1.27
L1
L2
L1
L2
D
L
8/9
STB3NA60-1
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics productsare notauthorized for use as criticalcomponents in life supportdevices or systems withoutexpress
written approval of SGS-THOMSON Microelectonics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
9/9
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