STB75NF75L_07 [STMICROELECTRONICS]
N-channel 75V - 0.009ヘ - 75A - D2PAK STripFET⑩ II Power MOSFET; N沟道75V - 0.009ヘ - 75A - D2PAK STripFET⑩ II功率MOSFET型号: | STB75NF75L_07 |
厂家: | ST |
描述: | N-channel 75V - 0.009ヘ - 75A - D2PAK STripFET⑩ II Power MOSFET |
文件: | 总13页 (文件大小:335K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
STB75NF75L
N-channel 75V - 0.009Ω - 75A - D2PAK
STripFET™ II Power MOSFET
Features
Type
VDSS
RDS(on)
ID
STB75NF75L
75V
<0.011Ω
75A
■ Exceptional dv/dt capability
■ 100% avalanche tested
■ Low threshold drive
3
1
D²PAK
Description
This MOSFET series realized with
STMicroelectronics unique STripFET process has
specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC
converters for Telecom and Computer
Figure 1.
Internal schematic diagram
applications. It is also intended for any
applications with low gate drive requirements.
Applications
■ Switching applications
Table 1.
Device summary
Order code
STB75NF75LT4
Marking
Package
D²PAK
Packaging
B75NF75L
Tape & reel
July 2007
Rev 3
1/13
www.st.com
13
Contents
STB75NF75L
Contents
1
2
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1
Electrical characteristics (curves)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3
4
5
6
Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
2/13
STB75NF75L
Electrical ratings
1
Electrical ratings
Table 2.
Symbol
Absolute maximum ratings
Parameter
Value
Unit
VDS
VGS
Drain-source voltage (VGS = 0)
Gate-source voltage
75
15
V
V
(1)
ID
Drain current (continuous) at TC = 25°C
Drain current (continuous) at TC = 100°C
Drain current (pulsed)
75
A
ID
70
A
(2)
IDM
300
300
2
A
PTOT
Total dissipation at TC = 25°C
Derating factor
W
W/°C
V/ns
mJ
dv/dt (3)
Peak diode recovery voltage slope
Single pulse avalanche energy
10
(4)
EAS
680
TJ
Operating junction temperature
Storage temperature
-55 to 175
°C
Tstg
1. Current limited by package
2. Pulse width limited by safe operating area
3. ISD ≤75A, di/dt ≤500A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX
4. Starting TJ = 25 oC, ID = 37.5A, VDD = 30V
Table 3.
Symbol
Thermal data
Parameter
Value
Unit
RthJC
RthJA
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
0.5
°C/W
°C/W
62.5
Maximum lead temperature for soldering
purpose
Tl
300
°C
3/13
Electrical characteristics
STB75NF75L
2
Electrical characteristics
(T
=25°C unless otherwise specified)
CASE
Table 4.
Symbol
On/off states
Parameter
Test conditions
Min.
Typ.
Max. Unit
Drain-source breakdown
voltage
V(BR)DSS
ID = 250µA, VGS= 0
75
V
V
DS = Max rating,
1
µA
µA
Zero gate voltage drain
current (VGS = 0)
IDSS
VDS = Max rating @125°C
10
Gate body leakage current
(VDS = 0)
IGSS
VGS = 15V
100
2.5
nA
V
VGS(th)
RDS(on)
VDS= VGS, ID = 250µA
Gate threshold voltage
1
VGS= 10V, ID= 37.5A
VGS= 5V, ID= 37.5A
Ω
Ω
Static drain-source on
resistance
0.009 0.011
0.010 0.013
Table 5.
Symbol
Dynamic
Parameter
Test conditions
Min. Typ. Max. Unit
(1)
VDS = 15V, ID = 37.5A
Forward transconductance
120
S
gfs
Ciss
Coss
Crss
Input capacitance
4300
660
pF
pF
pF
VDS =25V, f = 1 MHz,
VGS = 0
Output capacitance
Reverse transfer
capacitance
205
Qg
Qgs
Qgd
V
DD = 60V, ID = 75A
Total gate charge
Gate-source charge
Gate-drain charge
75
18
31
90
nC
nC
nC
VGS = 5V
see Figure 15
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Table 6.
Symbol
Switching times
Parameter
Test conditions
Min.
Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
35
155
110
60
ns
ns
ns
ns
VDD = 40V, ID = 37.5A,
RG = 4.7Ω, VGS = 4.5V
see Figure 14
Turn-off delay time
Fall time
4/13
STB75NF75L
Electrical characteristics
Min Typ. Max Unit
Table 7.
Source drain diode
Parameter
Symbol
Test conditions
ISD
Source-drain current
75
300
1.3
A
A
V
(1)
Source-drain current (pulsed)
Forward on voltage
ISDM
(2)
ISD = 75A, VGS = 0
VSD
ISD = 75A,
trr
Reverse recovery time
Reverse recovery charge
Reverse recovery current
120
500
9
ns
nC
A
di/dt = 100A/µs,
Qrr
VDD = 24V, TJ = 150°C
IRRM
see Figure 16
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
5/13
Electrical characteristics
STB75NF75L
2.1
Electrical characteristics (curves)
Figure 2. Safe operating area
Figure 3. Thermal impedance
Figure 4. Output characteristics
Figure 5. Transfer characteristics
Figure 6. Transconductance
Figure 7. Static drain-source on resistance
6/13
STB75NF75L
Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage Figure 11. Normalized on resistance vs
vs temperature
temperature
Figure 12. Source-drain diode forward
characteristics
Figure 13. Normalized B
vs temperature
VDSS
7/13
Test circuit
STB75NF75L
3
Test circuit
Figure 14. Switching times test circuit for
resistive load
Figure 15. Gate charge test circuit
Figure 16. Test circuit for inductive load
switching and diode recovery times
Figure 17. Unclamped Inductive load test
circuit
Figure 18. Unclamped inductive waveform
8/13
STB75NF75L
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect . The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com
9/13
Package mechanical data
STB75NF75L
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
4.4
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
1
10/13
STB75NF75L
Packaging mechanical data
5
Packaging mechanical data
2
D PAK FOOTPRINT
TAPE AND REEL SHIPMENT
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
11/13
Revision history
STB75NF75L
6
Revision history
Table 8.
Date
Revision history
Revision
Changes
21-Jun-2004
02-Oct-2006
13-Jul-2007
1
2
3
First release
New template, no content change
New updates on Table 7
12/13
STB75NF75L
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13/13
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