STB80NF10T4 [STMICROELECTRONICS]
N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET; N沟道100V - 0.012ohm - 80A D2PAK低栅电荷STripFET⑩功率MOSFET
| 型号： | STB80NF10T4 |
| 厂家： | 
ST |
| 描述： | N-CHANNEL 100V - 0.012ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| 文件： | 总11页 (文件大小：309K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
STP80NF10
STB80NF10
N-CHANNEL 100V - 0.012Ω - 80A - TO-220/D2PAK
LOW GATE CHARGE STripFET™II MOSFET
Table 1: General Features
Figure 1: Package
TYPE
V
R
I
D
DSS
DS(on)
STB80NF10
STP80NF10
100 V
100 V
< 0.015 Ω
< 0.015 Ω
80 A
80 A
■ TYPICAL R (on) = 0.012Ω
DS
■ EXCEPTIONAL dv/dt CAPABILITY
■ 100% AVALANCHE TESTED
■ APPLICATION ORIENTED
CHARACTERIZATION
3
1
3
2
1
2
D PAK
DESCRIPTION
TO-220
This MOSFET series realized with STMicroelec-
tronics unique STripFET process has specifically
been designed to minimize input capacitance and
gate charge. It is therefore suitable as primary
switch in advanced high-efficiency isolated DC-DC
converters for Telecom and Computer application.
It is also intended for any application with low gate
charge drive requirements.
Figure 2: Internal Schematic Diagram
APPLICATIONS
■ HIGH-EFFICIENCY DC-AC CONVERTERS
■ UPS AND MOTOR CONTROL
Table 2: Order Codes
SALES TYPE
STB80NF10T4
STP80NF10
MARKING
B80NF10@
P80NF10@
PACKAGE
PACKAGING
TAPE & REEL
TUBE
2
D PAK
TO-220
Rev. 3
February 2005
1/11
STP80NF10 - STB80NF10
Table 3: Absolute Maximum ratings
Symbol
Parameter
Value
100
Unit
V
V
DS
Drain-source Voltage (V = 0)
GS
V
DGR
Drain-gate Voltage (R = 20 kΩ)
100
V
GS
V
GS
Gate- source Voltage
±20
V
I
D
Drain Current (continuous) at T = 25°C
80
A
C
I
Drain Current (continuous) at T = 100°C
80 (*)
320
A
D
C
I
( )
Drain Current (pulsed)
A
DM
P
TOT
Total Dissipation at T = 25°C
300
W
C
Derating Factor
2
W/°C
V/ns
mJ
°C
°C
dv/dt (1)
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Storage Temperature
7
E
(2)
200
AS
T
stg
–55 to 175
175
T
Operating Junction Temperature
j
(■) Pulse width limited by safe operating area
(*) Limited by Package
(1) I ≤80A, di/dt ≤300A/µs, V ≤ V
, T ≤ T
j JMAX.
SD
DD
(BR)DSS
(2) Starting T = 25°C, I = 80A, V = 50V
j
D
DD
Table 4: Thermal Data
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
0.5
62.5
300
°C/W
°C/W
°C
Thermal Resistance Junction-ambient Max
Maximum Lead Temperature For Soldering Purpose
T
l
ELECTRICAL CHARACTERISTICS (T
=25°C UNLESS OTHERWISE SPECIFIED)
CASE
Table 5: Off
Symbol
Parameter
Drain-source
Test Conditions
Min.
Typ.
Max.
Unit
V
I
D
= 250 µA, V = 0
100
V
(BR)DSS
GS
Breakdown Voltage
I
Zero Gate Voltage
V
V
V
= Max Rating
1
µA
µA
nA
DSS
DS
Drain Current (V = 0)
GS
= Max Rating, T = 125°C
10
DS
C
I
Gate-body Leakage
= ± 20V
±100
GSS
GS
Current (V = 0)
DS
Table 6: On
Symbol
Parameter
Test Conditions
Min.
Typ.
3
Max.
4
Unit
V
V
GS(th)
V
V
= V , I = 250µA
Gate Threshold Voltage
2
DS
GS
D
R
Static Drain-source On
Resistance
= 10V, I = 40 A
0.012
0.015
Ω
DS(on)
GS
D
2/11
STP80NF10 - STB80NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
Table 7: Dynamic
Symbol
Parameter
Test Conditions
= 15V I = 40A
Min.
Typ.
Max.
Unit
g
fs
(1)
Forward Transconductance
V
50
S
DS
, D
C
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
= 25V, f = 1 MHz, V = 0
5500
700
175
pF
pF
pF
iss
DS
GS
C
oss
C
rss
Table 8: Switching On
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
Turn-on Delay Time
Rise Time
V
= 50V, I = 40A
26
80
ns
ns
d(on)
DD
D
t
r
R = 4.7Ω V = 10V
G GS
(see Figure 14)
Q
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
V
= 80V, I = 80A,
= 10V
135
23
51.3
182
nC
nC
nC
g
DD
D
Q
gs
gd
GS
Q
Table 9: Switching Off
Symbol
Parameter
Test Conditions
Min.
Min.
Typ.
Max.
Unit
t
Turn-off-Delay Time
Fall Time
V
= 50V, I = 40A,
116
60
ns
ns
d(off)
DD
D
t
f
R =4.7Ω, V = 10V
G GS
(see Figure 14)
Table 10: Source Drain Diode
Symbol
Parameter
Test Conditions
Typ.
Max.
80
Unit
A
I
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
SD
I
(2)
(1)
320
1.3
A
SDM
V
I
I
= 80A, V = 0
GS
V
SD
SD
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
106
0.45
8.5
= 80A, di/dt = 100A/µs,
ns
µC
A
SD
Q
rr
V
DD
= 50V, T = 150°C
j
I
(see test circuit, Figure 5)
RRM
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
3/11
STP80NF10 - STB80NF10
Figure 3: Safe Operating Area
Figure 6: Thermal Impedance
Figure 4: Output Characteristics
Figure 7: Transfer Characteristics
Figure 5: Transconductance
Figure 8: Static Drain-source On Resistance
4/11
STP80NF10 - STB80NF10
Figure 9: Gate Charge vs Gate-source Voltage
Figure 12: Capacitance Variations
Figure 10: Normalized Gate Thereshold Volt-
age vs Temperature
Figure 13: Normalized On Resistance vs Tem-
perature
Figure 11: Source-Drain Diode Forward Char-
acteristics
5/11
STP80NF10 - STB80NF10
Figure 14: Switching Times Test Circuit For
Resistive Load
Figure 16: Gate Charge Test Circuit
Figure 15: Test Circuit For Inductive Load
Switching and Diode Recovery Times
6/11
STP80NF10 - STB80NF10
TO-220 MECHANICAL DATA
mm.
inch
DIM.
MIN.
4.40
0.61
1.15
0.49
15.25
10
TYP
MAX.
4.60
0.88
1.70
0.70
15.75
10.40
2.70
5.15
1.32
6.60
2.72
14
MIN.
0.173
0.024
0.045
0.019
0.60
TYP.
MAX.
0.181
0.034
0.066
0.027
0.620
0.409
0.106
0.202
0.052
0.256
0.107
0.551
0.154
A
b
b1
c
D
E
0.393
0.094
0.194
0.048
0.244
0.094
0.511
0.137
e
2.40
4.95
1.23
6.20
2.40
13
e1
F
H1
J1
L
L1
L20
L30
øP
Q
3.50
3.93
16.40
28.90
0.645
1.137
3.75
2.65
3.85
2.95
0.147
0.104
0.151
0.116
7/11
STP80NF10 - STB80NF10
D2PAK MECHANICAL DATA
mm.
inch
TYP.
DIM.
MIN.
TYP
MAX.
4.6
MIN.
0.173
0.098
0.001
0.027
0.044
0.017
0.048
0.352
MAX.
0.181
0.106
0.009
0.036
0.067
0.023
0.053
0.368
A
A1
A2
B
4.4
2.49
0.03
0.7
2.69
0.23
0.93
1.7
B2
C
1.14
0.45
1.23
8.95
0.6
C2
D
1.36
9.35
D1
E
8
0.315
0.334
10
10.4
0.393
E1
G
8.5
4.88
15
5.28
15.85
1.4
0.192
0.590
0.050
0.055
0.094
0.208
0.625
0.055
0.068
0.126
L
L2
L3
M
1.27
1.4
1.75
3.2
2.4
R
0.4
0.015
V2
0º
4º
3
1
8/11
STP80NF10 - STB80NF10
2
D PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix ”T4”)*
REEL MECHANICAL DATA
mm
MIN. MAX. MIN. MAX.
330 12.992
inch
DIM.
A
B
C
D
G
N
T
1.5
12.8
20.2
24.4
100
0.059
13.2 0.504 0.520
0795
26.4 0.960 1.039
3.937
30.4
1.197
BASE QTY
BULK QTY
1000
TAPE MECHANICAL DATA
1000
mm
inch
DIM.
MIN. MAX. MIN. MAX.
10.5 10.7 0.413 0.421
15.7 15.9 0.618 0.626
A0
B0
D
1.5
1.6 0.059 0.063
D1
E
1.59 1.61 0.062 0.063
1.65 1.85 0.065 0.073
F
11.4
4.8
3.9
11.9
1.9
50
11.6 0.449 0.456
5.0 0.189 0.197
4.1 0.153 0.161
12.1 0.468 0.476
2.1 0.075 0.082
1.574
K0
P0
P1
P2
R
T
0.25 0.35 0.0098 0.0137
23.7 24.3 0.933 0.956
W
* on sales type
9/11
STP80NF10 - STB80NF10
Table 11: Revision History
Date
Revision
Description of Changes
04-Nov-2003
22-Nov-2004
21-Jan-2005
1
2
3
NEW DATASHEET ACCORDING TO PCN DSG-TRA/03/382
NEW STYLESHEET, NO CONTENT CHANGE
Value Change on Table 3
10/11
STP80NF10 - STB80NF10
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted
by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject
to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not
authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
All other names are the property of their respective owners
© 2005 STMicroelectronics - All Rights Reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
11/11
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